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As is well known, Paul Drude put forward the very first quantitative theory of electrical conduction in metals in 1900. He could successfully account for the Wiedemann–Franz law which states that the ratio of thermal to electrical conductivity divided by temperature is a constant called the Lorenz number. As it turns out, in Drude's derivation there is a lucky cancellation of two errors. Drude's underestimatation (by an order of 100) of the value of square of the average electron velocity compensated for his overestimatation of the electronic heat capacity (by the same order of 100). This compensation or cancellation of two errors lead to a value of the Lorenz number very close to its experimental value; which is well known. There is another error of a factor of two which Drude made when he calculated two different relaxation times for heat conductivity and electrical conductivity; in this article we highlight how and why this error occurred in Drude's derivation and how it was removed 5 years later (in 1905) by Hendrik Lorentz when he used the Boltzmann equation and a single relaxation time. This article is of pedagogical value and may be useful to undergraduate/graduate students learning solid state physics. [ABSTRACT FROM AUTHOR]

We investigated the effect of 0.6 MeV proton irradiation on the superconducting and normal-state properties of thin-film YBa 2 Cu 3 O 7 − δ superconductors. A thin-film YBCO superconductor (≈567 nm thick) was subject to a series of proton irradiations with a total fluence of 7.6 × 10 16   p / cm 2 . Upon irradiation, T c was drastically decreased from 89.3 K towards zero with a corresponding increase in the normal-state resistivity above T c . This increase in resistivity, which indicates an increase in defects inside the thin-film sample, can be converted to the dimensionless scattering rate. We found that the relation between T c and the dimensionless scattering rate obtained during proton irradiation approximates the generalized d-wave Abrikosov–Gor'kov theory better than the previous results obtained from electron irradiations. This is an unexpected result, since the electron irradiation is known to be most effective to suppress superconductivity over other heavier ion irradiations such as proton irradiation. In comparison with the previous irradiation studies, we found that the result can be explained by two facts. First, the dominant defects created by 0.6 MeV protons can be point-like when the implantation depth is much longer than the sample thickness. Second, the presence of defects on all element sites is important to effectively suppress T c . [ABSTRACT FROM AUTHOR]

In this paper we discuss quantitative (pointwise) decay estimates for solutions to the 3D cubic defocusing nonlinear Schrödinger equation with various (deterministic and random) initial data. We show that nonlinear solutions enjoy the same decay rate as the linear ones. The regularity assumption on the initial data is much lower than in previous results (see [C. Fan and Z. Zhao, Discrete Contin. Dyn. Syst., 41 (2021), pp. 3973--3984] and the references therein), and, moreover, we quantify the decay, which is another novelty of this work. Furthermore, we show that the (physical) randomization of the initial data can be used to replace the L¹ -data assumption (see [C. Fan and Z. Zhao, Proc. Amer. Math. Soc., 151 (2023), pp. 2527--2542] for the necessity of the L¹-data assumption). [ABSTRACT FROM AUTHOR]

In this note, we show the existence of a special solution u to defocusing cubic NLS in 3d, which lives in H^{s} for all s>0, but scatters to a linear solution in a very slow way. We prove for this u, for all \epsilon >0, one has \sup _{t>0}t^{\epsilon }\|u(t)-e^{it\Delta }u^{+}\|_{\dot {H}^{1/2}}=\infty. Note that such a slow asymptotic convergence is impossible if one further pose the initial data of u(0) be in L^{1}. We expect that similar construction hold the for other NLS models. It can been seen the slow convergence is caused by the fact that there are delayed backward scattering profile in the initial data, we also illustrate why L^{1} condition of initial data will get rid of this phenomena. [ABSTRACT FROM AUTHOR]

Resistivity and Hall effect measurements have been carried out on a micro-fabricated bridge of Bi2201 single crystal at low temperatures down to 0.4 K under high magnetic fields. When superconductivity is crashed by a high magnetic field, the recovered "normal state" resistivity still shows a linear temperature dependence in the low temperature region. Combining with the effective mass and the charge carrier density, we get a linear scattering rate 1/τ = αkBT/ħ with 0.77 < α < 1.16, which gives a strong evidence of the Planckian dissipation. Furthermore, our results reveal a new type of temperature dependence of the upper critical field, H c 2 (T) = H ∗ (1 − t) / (t + 0.154) , which is totally different from the expectation of the Ginzburg-Landau theory, and suggests the existence of uncondensed Cooper pairs above Hc2(T) line. [ABSTRACT FROM AUTHOR]

There are an increasing number of experimental scenarios where near-resonant light is applied to atoms tightly trapped in far off-resonant optical fields, such as for quantum optics applications or for atom imaging. Oftentimes, the electronic ground and excited states involved in the optical transition experience unequal trapping potentials. Here, we systematically analyze the effects of unequal trapping on near-resonant atom–light interactions. In particular, we identify regimes where such trapping can lead to significant excess heating compared to atoms in state-independent potentials, and a reduction of total and elastic scattering cross sections associated with a decreased atom–photon interaction efficiency. Understanding these effects can be valuable for achieving maximum efficiency in quantum optics experiments or atom imaging setups, where efficient atom–light interactions on resonance are desired, but achieving equal trapping is not feasible.

A field-dependent compact model of the backscattering coefficient and quasi-ballistic mobility of charge carriers in graphene has been developed for two different substrates: silicon dioxide ( SiO 2 ) and hexagonal boron nitride (h-BN). The formulation of the backscattering coefficient is performed using the Landauer and McKelvey flux theory in a quasi-ballistic regime. In graphene, the acoustic phonon, surface optical phonon, and charged impurity scattering affect the transport of the charge carriers. This is carefully considered in our formulation of the backscattering coefficient (R) and quasi-ballistic mobility (μ eff) . We find that the graphene field effect transistor (GFET) with the h-BN substrate has lower backscattering and higher quasi-ballistic mobility. The modeled expressions for backscattering coefficient and quasi-ballistic mobility are substituted in the drain (I DS) equation. The results are in good agreement with experimental results. [ABSTRACT FROM AUTHOR]

[Display omitted] • Strong EPI significantly reduces thermal conductivity in the C 3 B monolayer. • The reduction of κ induced by EPI is closely related to electron DOS. • The electronic band structure of C 3 B exhibits multivalley characteristics. • Unusual phenomenon of large el-ph scattering with low el-ph strength is uncovered. • The B atoms of C 3 B break structural symmetry and induce mass disorder scattering. Recently, the two-dimensional semiconductor C 3 B monolayer has attracted much attention owing to its excellent physical, optical, and electronic properties. In this work, the origin of electron-phonon interaction (EPI) on the thermal properties of C 3 B by n -type and p -type doping is systematically investigated via first-principles calculations to provide fundamental knowledge for the thermal management the C 3 B-based electronic devices. The carrier concentrations for the largest reduction of the lattice thermal conductivity (κ) appear at 4 × 1014 cm−2 for n -type and 9 × 1014 cm−2 for p -type, which is closely related to the electron density of states (DOS). The boron (B) atoms break the structural symmetry and induce mass disorder scattering, which renders C 3 B more prone to the influence of EPI. Moreover, the electronic band structure in the C 3 B monolayer exhibits multivalley characteristics, which leads to an intervalley scattering. It is worth noting that the anisotropy in the C 3 B monolayer can be significantly enhanced by EPI. Additionally, an abnormal phenomenon of strong electron-phonon scattering but low electron-phonon coupling strength is found in C 3 B monolayer, which indicates that large electron-phonon coupling strength is sufficient but not necessary for strong electron-phonon scattering. [ABSTRACT FROM AUTHOR]

Intense ultrashort laser pulses can create highly excited matter with extraordinary properties. Experimental and theoretical investigations of these extreme conditions are very complex and usually intertwined. Here, we report on a theoretical approach for the electron scattering rates and the optical properties in gold at elevated temperatures. Our theory is based on the degree of occupancy of the conduction band as well as inputs from ab initio simulations and experimental data. After the electron system has reached a quasi-equilibrium, the occupancy is fully determined by the electron temperature. Thus, our approach covers the important relaxation stage after fast excitations when the two-temperature model can be applied. Being based on the electronic structure of solids, the model is valid for lattice temperatures up to melting but the electron temperature might exceed this limit by far. Our results agree well with recent experimental data for both the collision frequencies and the conductivity of highly excited gold. Scattering of sp-electrons by d-electrons is found to be the dominant damping mechanism at elevated electron temperatures and depends strongly on the number of conduction electrons, hence, revealing the microscopic origin of the conductivity change after heating. The supportive benchmarks with experiments are very valuable as the underlying scattering rates determine a number of other transport, optical and relaxation properties of laser-excited matter.

The current measurement system of surface scattering rate applied in laser protective materials has the defects of low accuracy, discontinuous diagnosis region and narrow infrared measuring waveband. In order to make up for these shortcomings, a high-precision material-surface-scattering-rate measurement system based on a three-hole integrating sphere is proposed, which can realize the high-precision quantitative measurement on any region of coating surface from near-infrared to far-infrared band. Firstly, a new quantitative relationship between the luminous flux received by detector and the surface scattering rate of coating is obtained by modifying the existing integrating sphere scattering model. Secondly, a high-precision scattering characteristic measurement system based on a three-hole integrating sphere is designed and achieved. The influence of the main design parameters of the integrating sphere on the expected measuring accuracy of the system is investigated by using a TracePro simulation. Accordingly, the optimal design parameters of the system are given. Then, the main sources of the relative measurement uncertainty for the scattering rate are investigated experimentally, and four main relative uncertainty factors are evaluated quantitatively. Finally, according to the error propagation theory, the total experimental relative measurement uncertainty of the system is obtained, which is ±2.22% and 26–56% higher than the current measuring accuracy. The new coating-scattering-rate measurement system proposed in this paper can provide an effective experimental detection means for high-precision quantitative measurement and a performance evaluation for laser-protective-coating surface-scattering rate. [ABSTRACT FROM AUTHOR]

Induced disorder in graphene enables changes in electrical and thermal transport. It has been shown previously that disorder is very important for electron cooling in graphene through disorder-assisted electron-phonon scattering, particularly via the supercollisions process. Here we study electron-momentum relaxation due to electron-phonon scattering while increasing the degree of disorder. With in-situ scanning thermal microscopy we monitor the temperature rise in the constriction region of a bowtie-shaped graphene device while increasing the disorder by means of feedback-controlled voltage ramps at high-current densities. Analysis of the combined thermal and electrical measurements in the low bias regime shows that the relative change of the momentum scattering rate vs temperature, as measured at room temperature, increases with strong local disorder. By excluding other candidate mechanisms for this phenomenon, including a change of the charge carriers density and activation of optical phonons, we conclude that the increase we observe in the temperature-dependent component of the scattering rate is likely due to new acoustic phonon scattering channels that open up as disorder increases. [Display omitted] [ABSTRACT FROM AUTHOR]

Graphene nanoscroll introduced recently is another form of a graphene-based two-dimensional material, which is especially attractive in nanoelectronic applications. As carriers can travel ballistically or semi-ballistically, they can reach high-speed and energy if the channel length is enough. Therefore, they can collide and result in an excessive current called ionisation current. As a result, it is important to study this mechanism carefully. In this paper, we propose an analytical approach to calculate an ionisation coefficient. [ABSTRACT FROM AUTHOR]

The current measurement system of surface scattering rate applied in laser protective materials has the defects of low accuracy, discontinuous diagnosis region and narrow infrared measuring waveband. In order to make up for these shortcomings, a high-precision material-surface-scattering-rate measurement system based on a three-hole integrating sphere is proposed, which can realize the high-precision quantitative measurement on any region of coating surface from near-infrared to far-infrared band. Firstly, a new quantitative relationship between the luminous flux received by detector and the surface scattering rate of coating is obtained by modifying the existing integrating sphere scattering model. Secondly, a high-precision scattering characteristic measurement system based on a three-hole integrating sphere is designed and achieved. The influence of the main design parameters of the integrating sphere on the expected measuring accuracy of the system is investigated by using a TracePro simulation. Accordingly, the optimal design parameters of the system are given. Then, the main sources of the relative measurement uncertainty for the scattering rate are investigated experimentally, and four main relative uncertainty factors are evaluated quantitatively. Finally, according to the error propagation theory, the total experimental relative measurement uncertainty of the system is obtained, which is ±2.22% and 26–56% higher than the current measuring accuracy. The new coating-scattering-rate measurement system proposed in this paper can provide an effective experimental detection means for high-precision quantitative measurement and a performance evaluation for laser-protective-coating surface-scattering rate.

We report a comparative study of scattering rates which are calculated using different formalisms such as [P. B. Allen, Phys. Rev. B 3, 305 (1971); S. V. Shulga, D. V. Dolgov and E. G. Maksimov, Physica C 178, 266 (1991); B. Mitrović and M. A. Fiorucci, Phys. Rev. B 31, 2694 (1985); S. G. Sharapov and J. P. Carbotte, Phys. Rev. B 72, 134506 (2005)] and memory function formalism (MemF) [H. Mori, Prog. Theor. Phys. 33, 423 (1965)]. An advantage of this study is that it sheds light on the physical assumptions used in these formalisms. In this context, we consider a case of electron–phonon interaction and discuss frequency- and temperature-dependent behavior of scattering rates. Further, a comparative study of scattering rate proceeds for distinct phonon density of states (PDOS) and electron density of states (EDOS). From the detailed analysis, we observe that the MemF is the most general one and others are based on restrictive assumptions as discussed in this work. [ABSTRACT FROM AUTHOR]

Abstract We investigated theoretically the effect of introducing Si impurities in a single layer graphene (1LG) that had been deposited on a polar substrate on the transport properties of the graphene layer. We consider in our analysis the scattering effects due to the surface optical (SO) phonons located at the interface of the 1LG with various polar substrates such as S i C , hexagonal B N , S i O 2 a n d H f O 2 . Our results demonstrate a reduction of SO phonon-limited (SOPL) mobility, and SOPL conductivity as well as an increase of the SOPL resistivity and of the scattering rate in the presence of Si impurities in the 1LG. Further, we studied the effect of Si impurities on the electron-surface phonon interaction. For our analysis we used the eigenenergies aquired from the tight-binding Hamiltonian in 1LG. Indeed the presence of the Si impurities induces a decrement in the resonant coupling between the electronic sub-levels and the surface vibration modes in monolayer graphene deposited on polar substrates. Finally, we investigated the effect of Si impurities on the Auger scattering process which affects the carriers relaxation. Our results show an enhancement of the Auger scattering rate in the case of the Si-doped 1LG compared to the undoped 1LG. Highlights • Effect of Si impurities on transport properties in one layer graphene on polar substrates (SiO 2 , HfO 2 , SiC , hexagonal BN). • Study of the effect of the Si impurities on electron-surface phonon interaction in one layer graphene on polar substrates. • Investigation of the effect of Si impurities on optical properties in one layer graphene on polar substrates. [ABSTRACT FROM AUTHOR]

Graphical abstract Highlights • Hot carriers are studied in stanene to adapt this material to specific applications. • Electron-phonon coupling vary strongly along crystallographic directions. • Electron linewidth depends mainly on the out-of-plane optical phonon modes. • Linewidth and hot electrons lifetime are determined. Abstract Collecting carriers before they thermalize is the main goal for carrier's cells. This work presents a study on hot carriers in stanene using density functional and many-body perturbation theories. The present approach is applied to investigate the electron linewidth from electron-phonon interaction at 0 K and 300 K. It is shown that electron-phonon linewidth in stanene displays an important temperature dependence as a function of electron energy. Two different cases are considered in this report, first for electron state initially at the valence band maximum and second at the conduction band minimum. It is found that the electron-phonon interaction is strongly dependent on the electron wave vector. This orientation dependence can be used as a basis for transport phenomena. The electron scattering rate at room temperature, projected on the six phonons modes, reveals that the contribution is overall dominated by out-of-plane transversal optical modes (ZO). Another finding is that stanene's hot carriers thermalize at 250 fs, which is faster than in graphene. This study paves the way to explore hot electrons that are difficult to achieve in experiment. [ABSTRACT FROM AUTHOR]

• Four-phonon scattering is significant in 2D hexagonal structures. • Atomic mass ratio's raise enhances four-phonon scattering and weakens N scattering process. • N scattering process is stronger in three-phonon process. Comprehensive understanding of phonon transport will facilitate the exploration of materials. Four-phonon scattering is find to be important to determine thermal conductivity in many materials, and normal scattering (N process) could lead to some unique phonon transport behaviors, especially in 2D materials. In this work, we studied four-phonon and normal scattering in hexagonal structures, both of which were found to be significant. With the increase of atomic mass ratio, the relative four-phonon scattering is gradually enhanced, whereas N process is weakened. Callaway model and Allen's modified models were used to approximate the thermal conductivity, and we find that the models are applicable in some cases with relative weak N scattering intensity. [ABSTRACT FROM AUTHOR]

The impacts of moderation on the neutronic behavior of the VVER-1000 reactor assembly have been investigated by using annular fuel and compared with the conventional one. The study revealed that annular fuel shows a softer neutron spectrum, a better control rod worth and 16% less fissile content compared to the conventional fuel. After 60 MWd/kg burnup, annular fuel contains 6.45% and 255.41% more Pu-239 and Pu-241 respectively than the conventional fuel which can be a valuable source of fissile materials for the MOX fuel. Additionally, annular fuel shows a higher degree of symmetry in power peaking factor (PPF), higher scattering rate, 3.41% less tritium production at the beginning of cycle, and better shutdown margin without significant changes in axial & radial flux. From the neutronics point of view, annular fuel can be a propitious replacement of conventional fuel for the VVER-1000 reactor. [ABSTRACT FROM AUTHOR]

Isotope engineering has been shown to be an effective means of regulating thermal conductivity. In this work, we studied the isotope engineering of thermal conductivity in bulk and 2D GaN, and diametrically opposite atom isotope dependence is found. That is, Ga isotope has a large effect (77%) on bulk GaN, while the effect of N isotope on the thermal conductivity is negligible. In 2D GaN, however, N isotope effect (20%) is more significant than that of Ga. Understanding of the different isotope dependence is achieved by deeper insight. Due to the relative magnitude of scattering rate, isotopic scattering influences the thermal conductivity of bulk and 2D GaN in different frequency regions, leading to the opposite atom dependence., (© 2023 IOP Publishing Ltd.)

A quantum mechanical model has been used to calculate the full electron-phonon scattering rates in pure copper at extreme cold temperatures. The proposed model uses Fermi’s Golden rule, specific to each scattering mechanism and wave vector state, providing more accuracy and more details than the widely used empirical third power rule for scattering rates. The empirical third power rule is actually only valid in the low-temperature limit. The results are in good agreement with existing experimental data and theoretical calculations with the assumption that the wave vector of a phonon is much larger than the wave vector of an electron (q ≫ k) and three-dimensional density of states converted to one-dimensional density of states to reduce calculation burden by orders of magnitude. The energy generated by Joule heating is calculated using the proposed model and compared with the experimental data from the literatures. Although the results presented are specific to copper, the method is directly applicable to other metals. In addition, the proposed model can be used to study the thermal properties of copper wires in high temperature superconductor power cable applications. [ABSTRACT FROM AUTHOR]

Theory of electron-polar optical single phonon field-induced tunnel scattering under the influence of an electric field is considered. It is assumed that the non-degenerate polar semiconductor has a spherical parabolic band structure. In low-field regime, an expression for the scattering time is obtained. Dependence of the scattering time (the scattering rate) on the electron energy is analyzed. The results of corresponding numerical computations for an n-GaAs at 300 K are presented. It is established that there is no fracture on the curve of electron scattering time (scattering rate) dependence on the electron energy. [ABSTRACT FROM AUTHOR]

The original Drude model, proposed over a hundred years ago, is still used today for the analysis of optical properties of solids. Within this model, both the plasma frequency and quasiparticle scattering rate are constant, which makes the model rather inflexible. In order to circumvent this problem, the so-called extended Drude model was proposed, which allowed for the frequency dependence of both the quasiparticle scattering rate and the effective mass. In this work we will explore an alternative approach to the extended Drude model. Here, one also assumes that the quasiparticle scattering rate is frequency dependent; however, instead of the effective mass, the plasma frequency becomes frequency-dependent. This alternative model is applied to the high Tc superconductor Bi2Sr2CaCu2O8+δ (Bi2212) with Tc = 92 K, and the results are compared and contrasted with the ones obtained from the conventional extended Drude model. The results point to several advantages of this alternative approach to the extended Drude model. [ABSTRACT FROM AUTHOR]

In order to develop a better understanding of the thermal conduction of the intermetallic compounds NiAl and Ni 3 Al, detailed electron-phonon scattering was investigated by first-principles calculations. The phonon thermal conductivity of NiAl and Ni 3 Al was calculated by considering phonon-phonon and electron-phonon scatterings. It is found that electron-phonon coupling has a strong effect on the phonon thermal conductivity. At a temperature of 100 K, the electron-phonon coupling will induce 55% and 75% reduction in phonon thermal conductivity of NiAl and Ni 3 Al, respectively. Such an effect decreases with increasing temperature. The electron thermal conductivity was also predicted by considering electron-phonon scattering. We find that though the electrons dominate the thermal transport in NiAl and Ni 3 Al at high temperatures, the phonons have significant contribution to the total thermal conductivity in the sub-room temperature range. Moreover, we find that at room temperature phonons with mean free paths between 1 and 100 nm are the dominant contributors to the thermal conductivity, while the mean free paths of dominant electrons are 1–20 nm. [ABSTRACT FROM AUTHOR]

The terahertz plasmon dispersion of a multilayer system consisting of graphene on dielectric and/or plasma thin layers is systematically investigated. We show that graphene plasmons can couple with other quasiparticles such as phonons and plasmons of the substrate; the characteristics of the plasmon dispersion of graphene are dramatically modified by the presence of the coupling effect. The resultant plasmon dispersion of the multilayer system is a strong function of the physical parameters of the spacer and the substrate, signifying the importance of the substrate selection in constructing graphene-based plasmonic devices.

In some high precision optical measurement, the scattering particles in the normal atmospheric environment will produce interference on the measurement results. Particularly, if the signal is very weak, the impact will not be ignored, such as the detection of ultra smooth optical surface, high reflecting mirror scattering rate, etc. we need to consider the environmental impact on the measurement results. To solve the problem, an atmospheric scattering rate measuring device is introduced for measuring the ordinary particles in the atmospheric environment on the laser scattering rate. The device can reflect the degree of light scattering measurement environment, and then assess whether the environment can meet the scattering measurement. The device takes a stable power laser as the light source, the light beam passes through the integrating sphere cavity, so the particles in the cavity are scattered, the scattered light is collected by the integrating sphere, and then the scattered light intensity of the integrating sphere is measured by the photoelectric multiplier tube. The signal processing is performed by the correlation detection method which can effectively remove the background noise. In the laboratory environment, the measurement accuracy is up to 0.1 x 10-6, the device error can reach ±2% , and the high precision measurement of scattering rate is achieved. [ABSTRACT FROM AUTHOR]

We present a theoretical study of the electron- surface phonon interaction in mono-layer graphene (1LG) on polar substrates such as SiO 2 , HfO 2 , SiC and hexagonal BN . Thus we have used the eigen energies derived from the tight-binding Hamiltonian in mono-layer graphene. Our results indicate that the electron-surface phonon interaction depends on the polar substrate. Such polar substrates allow for the existence of polar optical phonons localized near the graphene-substrate interface which could be an important scattering source for graphene carriers through the long-range Fröhlich coupling. Likewise, we have investigated the effect of various dielectrics on the SO phonon-limited mobility, the SO phonon-limited resistivity, the SO phonon-limited conductivity and the scattering rate in single layer graphene by considering the effects of the SO optical phonon scattering arising from the polar substrates and by varying the temperature, the charge carrier density and the physical separation between graphene and interface of dielectric substrate. [ABSTRACT FROM AUTHOR]

We present a theoretical study of two specific dynamical optical properties, namely Auger and surface electron-phonon interaction processes in monolayer graphene on polar substrates such as S i O 2 , H f O 2 , S i C and hexagonal B N . Thus the eigenenergies have been derived from the tight-binding Hamiltonian in monolayer graphene. Our results indicate that both Auger and electron-surface phonon interaction processes depend on the polar substrate. Such polar substrates allow for the presence of polar optical phonons localized near the graphene-substrate interface which could be a significant scattering source for graphene carriers across the long-range Fröhlich coupling. Furthermore, the linear, gapless band structure of graphene provides ideal conditions for Auger processes which are Auger recombination (AR) and impact ionization (IMI). These processes are of fundamental interest because they strongly influence the relaxation dynamics of carriers. Likewise, we have investigated the effect of various dielectrics on both Auger and electron–surface phonon scattering rates in single layer graphene by varying the temperature, the charge carrier density and the physical separation between the interface of the dielectric substrate and graphene. [ABSTRACT FROM AUTHOR]

There has been considerable interest in superlattice structures of large band gap semiconductors like AlGaN/GaN based arrangements due to its measured parameter and favorable material properties, such as high electron mobility and very high thermal conductivity. Hence, an understanding of the electron transport in GaN has always been prioritized to improve the GaN semiconductors based devices. Here the transport properties of electron in isotopically mixed Ga 14 N 15 N alloy channels have been studied. Different ratio of isotopes has been considered and their effect on the alloy scattering phenomenon of specimen is studied. [ABSTRACT FROM AUTHOR]