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High‐nickel layered cathodes exhibit great promise in advancing high‐energy‐density batteries owing to their significant advantages in high energy capacity and low cost, but they suffer severe structural and interfacial deterioration during cycling, resulting in safety risk and reduced cycle life. Herein, drawing inspiration from the low melting point infusion capability of Sb2Se3, a three‐pronged strategy aimed at simultaneously achieving coating on primary and secondary particles surface, Sb doping and elongated and slimed primary particle morphology is proposed and developed to fortify the structural and interfacial stability of high‐nickel LiNi0.9Co0.05Mn0.05O2 (NCM90) cathode. The "melted and infused" Sb2Se3 plays a beneficial role in the defensive effect on primary and secondary particle's surfaces, mitigating the interfacial deterioration. In addition, the enhanced structural stability is achieved by both Sb5+ doping and regulated primary particle morphology, contributing to the alleviated particle breakage and ultimately reinforced cycling stability. Consequently, the Sb2Se3‐NCM90 electrodes significantly improve cycling performance, which maintain higher capacity retentions of 96.6% at 4.3 V after 100 cycles and 80.2% at 1C/5C after 500 cycles. The proposed coating‐doping‐microstructure regulation three‐in‐one strategy for improving the cycling stability of high‐nickel NCM cathodes offers innovative ideas for the design and advancement of high‐energy‐density lithium‐ion batteries. [ABSTRACT FROM AUTHOR]

Antimony selenide (Sb2Se3) has developed as an eco‐friendly photovoltaic candidate owing to its non‐toxic composition and exceptional optoelectronic properties. However, the toxic and parasitic light‐absorbing CdS are widely used as electron transport layer (ETL) in Sb2Se3 solar cells, which severely limits its development. Herein, an alternative, zinc tin oxide (ZTO) ETL with varying composition‐dependent energy structure is deposited by atomic layer deposition (ALD) technique and used for constructing Cd‐free Sb2Se3 solar cells. It has been found that the ZTO ETL possessing an appropriate Zn/Sn ratio can alter the Sb2Se3/ZTO heterojunction band alignment to an ideal "spike‐like" arrangement. It not only suppresses the accumulation and recombination of charge carriers at the interface, but also effectively enhances carrier transport. In addition, thanks to the formation of passivated Sb2O3 ultra‐thin layer upon ALD process, the non‐radiative recombination within bulk Sb2Se3 can be effectively suppressed, and therefore enhancing carrier lifetime, extraction efficiency, and collection efficiency. Consequently, the as‐fabricated Mo/Sb2Se3/ZTO/ITO/Ag thin‐film solar cell demonstrates an impressive efficiency of 8.63%. This accomplishment establishes it as the most efficient Cd‐free Sb2Se3 solar cell to date, underscoring the significant advantages of incorporating ZTO ETL in the development of Sb2Se3 photovoltaic scenarios. [ABSTRACT FROM AUTHOR]

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The evolution of Sb2Se3 heterojunction devices away from CdS electron transport layers (ETL) to wide bandgap metal oxide alternatives is a critical target in the development of this emerging photovoltaic material. Metal oxide ETL/Sb2Se3 device performance has historically been limited by relatively low fill factors, despite offering clear advantages with regards to photocurrent collection. In this study, TiO2 ETLs are fabricated via direct current reactive sputtering and tested in complete Sb2Se3 devices. A strong correlation between TiO2 ETL processing conditions and the Sb2Se3 solar cell device response under forward bias conditions is observed and optimized. Numerical device models support experimental evidence of a spike‐like conduction band offset, which can be mediated, provided a sufficiently high conductivity and low interfacial defect density can be achieved in the TiO2 ETL. Ultimately, a SnO2:F/TiO2/Sb2Se3/P3HT/Au device with the reactively sputtered TiO2 ETL delivers an 8.12% power conversion efficiency (η), the highest TiO2/Sb2Se3 device reported to‐date. This is achieved by a substantial reduction in series resistance, driven by improved crystallinity of the reactively sputtered anatase‐TiO2 ETL, whilst maintaining almost maximum current collection for this device architecture. [ABSTRACT FROM AUTHOR]

Tin selenide (SnSe)-based solar cells are gaining significant interest from researchers due to their exceptional semiconductor properties. The primary aim of this study is to enhance the performance of the newly proposed Cu/FTO/CdS/SnSe/Sb2Se3/Au solar cell and to analyze the effects of the Sb2Se3 second absorber layer and CdS buffer layer on key performance metrics such as open circuit voltage (VOC), short circuit current density (JSC), fill factor (FF), and power conversion efficiency (PCE). SCAPS-1D simulation software was used for this investigation. Various factors were examined to improve performance, including the impacts of thickness variation, carrier concentration, bulk defect concentration in each layer, interface defects, operating temperature, and the placement of front and rear electrodes. The reference structure (Cu/FTO/CdS/SnSe/Au) showed a PCE of 26.15%, VOC of 0.79 V, JSC of 36.36 mA/cm2, and FF of 85.94%. By adding the Sb2Se3 layer as a second absorber in the proposed structure (Cu/FTO/CdS/SnSe/Sb2Se3/Au), the performance improved to a PCE of 28.18%, VOC of 0.84 V, JSC of 38.42 mA/cm2, and FF of 86.57%. This study offers valuable insights and a practical approach to developing economically viable SnSe-based thin-film solar cells. [ABSTRACT FROM AUTHOR]

Optical logic devices are essential functional devices for achieving optical signal processing. In this study, we design an ultra-compact (4.92 × 2.52 μm2) reconfigurable optical logic gate by using inverse design method with DBS algorithm based on Sb2Se3-SOI integrated platform. By selecting different amorphous/crystalline distributions of Sb2Se3 via programmable electrical triggers, the designed structure can switch between OR, XOR, NOT or AND logic gate. This structure works well for all four logic functions in the wavelength range of 1540–1560 nm. Especially at the wavelength of 1550 nm, the Contrast Ratios for XOR, NOT and AND logic gate are 13.77 dB, 11.69 dB and 3.01 dB, respectively, indicating good logical judgment ability of the device. Our design is robust to a certain range of fabrication imperfections. Even if performance weakens due to deviations, improvements can be obtained by rearranging the configurations of Sb2Se3 without reproducing the whole device. [ABSTRACT FROM AUTHOR]

The unique 1D crystal structure of Antimony Triselenide (Sb2Se3) offers notable potential for use in flexible, lightweight devices due to its excellent bending characteristics. However, fabricating high‐efficiency flexible Sb2Se3 solar cells is challenging, primarily due to the suboptimal contact interface between the embedded Sb2Se3 layer and the molybdenum back‐contact, compounded by complex intrinsic defects. This study introduces a novel Molybdenum Trioxide (MoO3) interlayer to address the back contact interface issues in flexible Sb2Se3 devices. Further investigations indicate that incorporating a MoO3 interlayer not only enhances the crystalline quality but also promotes a favorable [hk1] growth orientation in the Sb2Se3 absorber layer. It also reduces the barrier height at the back contact interface and effectively passivates harmful defects. As a result, the flexible Sb2Se3 solar cell, featuring a Mo‐foil/Mo/MoO3/Sb2Se3/CdS/ITO/Ag substrate structure, demonstrates exceptional flexibility and durability, enduring large bending radii and multiple bending cycles while achieving an impressive efficiency of 8.23%. This research offers a straightforward approach to enhancing the performance of flexible Sb2Se3 devices, thereby expanding their application scope in the field of photovoltaics. [ABSTRACT FROM AUTHOR]

Both experimental and theoretical works have demonstrated that two-dimensional materials exhibit strong thickness-dependent electronic and linear optical properties. However, the nonlinear optical (NLO) effect with respect to the thickness still needs to be further investigated, which is of great significance to design different photonic devices. Herein, we develop the physical vapor deposition technique to prepare a series of antimony selenide (Sb2Se 3) films. The relationship between the thickness of Sb2Se3 film and the NLO absorption was investigated by a Z -scan system under 35 fs, 800 nm laser excitation. The result shows the thicker Sb2Se3 film (∼ 50 nm) performs a larger third-order NLO susceptibility (Im χ (3)) approximately − 4. 5 9 × 1 0 − 8 esu, which can be interpreted by the stronger photon absorption, lower saturable intensity, and larger absorption cross-section of ground-state. More importantly, the Im χ (3) absolute value of thick Sb2Se3 film is also far larger than those of graphene, black phosphorus, transition metal dichalcogenide, MXenes, and heterostructure. This work demonstrates that Sb2Se3 film is an excellent saturable absorber and provides a promising application in nonlinear photonics. [ABSTRACT FROM AUTHOR]

Antimony selenide (Sb 2 Se 3) is considered an ideal anode material candidate for sodium-ion batteries (SIBs) due to its abundant resources, low bandgap, and high theoretical capacity. However, the big volume changes, poor structural stability, and slow dynamics have led to rapid capacity decay and severely limited its application in large-scale energy storage. To resolve these problems, we designed a rod-shaped Sb 2 Se 3 composite material coated with Co and Sb bimetallic selenides using a one-pot hydrothermal method (CoSb 2 Se 4 @Sb 2 Se 3) to activate the redox reaction of SIBs anode. The presence of a suitable Co content coating layer (2CSS) enables Sb 2 Se 3 to adapt to volume expansion during cycling, thereby improving structural and cycling stability. After 160 cycles under 1 A g−1 conditions, the capacity retention rate is 81.4%. 2CSS also exhibits rapid ion diffusion ability and efficient Na+ storage capacity, which is beneficial for improving rate performance. Even at 10 A g−1, it can provide a reversible discharge capacity of 222.2 mAh g−1. A series of electrochemical performance tests strongly demonstrate that coatings can better utilize the capacity advantage of alloy electrodes to improve electrochemical performance. This work provides an effective strategy for constructing high-performance cathode materials for SIBs. [ABSTRACT FROM AUTHOR]

Antimony chalcogenide, as a newcomer to light harvesting materials, is regarded as an auspicious contender for incorporation as a photoactive layer in thin film tandem solar cells (TFTSCs). The current study introduces the design of all-antimony chalcogenide TFTSC comprised of an Sb2S3 (1.7 eV) front subcell and an Sb2Se3 (1.2 eV) rear subcell. The challenges to migrating from four-terminal (4-T) to two-terminal (2-T) designs are highlighted and possible solutions are proposed. To commence, a calibration procedure for the two subcells is conducted in alignment with experimental investigations. The benchmarked solar cells yield a power conversion efficiency (PCE) of 8.08 % for the upper subcell and 10.58 % for the lower subcell. Subsequently, upon integration of both subcells within the initial 4-T Sb2S3/Sb2Se3 TFTSC, the resultant PV cell attains a PCE of 12.27 %. Before transitioning it to a more efficient 2T tandem configuration, we explore alternative inorganic HTL materials to the Spiro-OMeTAD HTL to overcome its practical considerations. Cu2O is found to be the best HTL alternative to be included for both subcells. Upon stacking into the tandem structure, the combined cell exhibited an efficiency of 15.68 % and a notable Jsc of 16.23 mA/cm2. To further enhance the tandem performance, the device structure is optimized by engineering the CBO of two sub-cells and employing a double ETL design for the front sub-cell. At the considered current matching criterion, the tandem device PCE and Jsc are boosted to 27.86 % and 17.60 mA/cm2, respectively. Based on this full optoelectronic analysis, developed in the Silvaco TCAD environment, a 2-T all antimony chalcogenide tandem configuration can be realized and optimized, paving the way for future experimental endeavors.

This study explores the growth of Sb2Se3 films on soda-lime glass (SLG) surfaces using the chemical molecular beam deposition (CMPD) method at a substrate temperature of 500°C. High-purity binary compounds, Sb2Se3 and Se, were employed as source materials for film deposition. Scanning electron microscopy (SEM) was employed to investigate the morphological characteristics of the Sb2Se3 films. Furthermore, the influence of temperature on the grain size and crystallographic orientation in selenium films was examined. Samples were obtained from a selenium source at temperatures of 370°C and 430°C. The results indicate that increasing the temperature of the selenium source results in the formation of larger grains and the presence of rod-shaped grains of Sb2Se3 aligned parallel to the substrate. A sample obtained at 370°C exhibited grains larger than 2 µm in size, evenly distributed across the substrate surface, indicating a uniform growth process. In contrast, when the temperature of the selenium source was raised to 430°C, considerably larger grains measuring approximately 4 μm were detected on the film surface substrate. X-ray diffraction analysis was conducted to gain insights into the crystalline phases and crystal structure of the Sb2Se3 films synthesized under different temperatures of the selenium source. The X-ray diffraction patterns displayed prominent peaks corresponding to the crystallographic planes (221) and (211), indicating the presence of strong crystalline phases. Additionally, peaks such as (020), (120), and (310) were observed in the X-ray patterns, further confirming the crystallinity of the films.

In recent years, research attention has increasingly focused on thin-film photovoltaics utilizing Sb2Se3 as an ideal absorber layer. This compound is favored due to its abundance, non-toxic nature, long-term stability, and the potential to employ various cost-effective and scalable vapor deposition (PVD) routes. On the other hand, improving passivation, surface treatment and p-type carrier concentration is essential for developing high-performance and commercially viable Sb2Se3 solar cells. In this study, Cu-doped Sb2Se3 solar devices were fabricated using two distinct PVD techniques, pulsed electron deposition (PED) and radio frequency magnetron sputtering (RFMS). Furthermore, 5%Cu:Sb2Se3 films grown via PED exhibited high open-circuit voltages (VOC) of around 400 mV but very low short-circuit current densities (JSC). Conversely, RFMS-grown Sb2Se3 films resulted in low VOC values of around 300 mV and higher JSC. To enhance the photocurrent, we employed strategies involving a thin NaF layer to introduce controlled local doping at the back interface and a bilayer p-doped region grown sequentially using PED and RFMS. The optimized Sb2Se3 bilayer solar cell achieved a maximum efficiency of 5.25%.

In recent years, research attention has increasingly focused on thin-film photovoltaics utilizing Sb2Se3 as an ideal absorber layer. This compound is favored due to its abundance, non-toxic nature, long-term stability, and the potential to employ various cost-effective and scalable vapor deposition (PVD) routes. On the other hand, improving passivation, surface treatment and p-type carrier concentration is essential for developing high-performance and commercially viable Sb2Se3 solar cells. In this study, Cu-doped Sb2Se3 solar devices were fabricated using two distinct PVD techniques, pulsed electron deposition (PED) and radio frequency magnetron sputtering (RFMS). Furthermore, 5%Cu:Sb2Se3 films grown via PED exhibited high open-circuit voltages (VOC) of around 400 mV but very low short-circuit current densities (JSC). Conversely, RFMS-grown Sb2Se3 films resulted in low VOC values of around 300 mV and higher JSC. To enhance the photocurrent, we employed strategies involving a thin NaF layer to introduce controlled local doping at the back interface and a bilayer p-doped region grown sequentially using PED and RFMS. The optimized Sb2Se3 bilayer solar cell achieved a maximum efficiency of 5.25%. [ABSTRACT FROM AUTHOR]

Abstract The unique 1D crystal structure of Antimony Triselenide (Sb2Se3) offers notable potential for use in flexible, lightweight devices due to its excellent bending characteristics. However, fabricating high‐efficiency flexible Sb2Se3 solar cells is challenging, primarily due to the suboptimal contact interface between the embedded Sb2Se3 layer and the molybdenum back‐contact, compounded by complex intrinsic defects. This study introduces a novel Molybdenum Trioxide (MoO3) interlayer to address the back contact interface issues in flexible Sb2Se3 devices. Further investigations indicate that incorporating a MoO3 interlayer not only enhances the crystalline quality but also promotes a favorable [hk1] growth orientation in the Sb2Se3 absorber layer. It also reduces the barrier height at the back contact interface and effectively passivates harmful defects. As a result, the flexible Sb2Se3 solar cell, featuring a Mo‐foil/Mo/MoO3/Sb2Se3/CdS/ITO/Ag substrate structure, demonstrates exceptional flexibility and durability, enduring large bending radii and multiple bending cycles while achieving an impressive efficiency of 8.23%. This research offers a straightforward approach to enhancing the performance of flexible Sb2Se3 devices, thereby expanding their application scope in the field of photovoltaics.

Optical logic devices are essential functional devices for achieving optical signal processing. In this study, we design an ultra-compact (4.92 × 2.52 μm2) reconfigurable optical logic gate by using inverse design method with DBS algorithm based on Sb2Se3-SOI integrated platform. By selecting different amorphous/crystalline distributions of Sb2Se3 via programmable electrical triggers, the designed structure can switch between OR, XOR, NOT or AND logic gate. This structure works well for all four logic functions in the wavelength range of 1540–1560 nm. Especially at the wavelength of 1550 nm, the Contrast Ratios for XOR, NOT and AND logic gate are 13.77 dB, 11.69 dB and 3.01 dB, respectively, indicating good logical judgment ability of the device. Our design is robust to a certain range of fabrication imperfections. Even if performance weakens due to deviations, improvements can be obtained by rearranging the configurations of Sb2Se3 without reproducing the whole device.

Sb2Se3 solar cells deposited by rapid thermal evaporation (RTE) have drawn extensive attention owing to their compatibility with the commercial production line of CdTe solar cells and can be used to fabricate high‐quality Sb2Se3 films with high reproducibility. However, the deposition pressure during the RTE process has not been clearly explored, although it has a significant effect on the Sb2Se3 film quality. A novel two‐step deposition strategy is proposed that finely regulates the deposition pressure to improve the quality of Sb2Se3 absorber layers, thereby improving the device performance of Sb2Se3 solar cells. This novel method includes a rapid deposition process under a low pressure (5 mTorr) and an in situ annealing process under a relatively high pressure (200 Torr). The maximum power conversion efficiency (PCE) of Sb2Se3 solar cells fabricated by two‐step deposited approach is up to 8.12%. The PCE enhancement is attributed to the increased grain size, reduced grain boundaries, modified surface Fermi level gradient of the absorber layer, and improved defect performance. This innovative deposition technique is expected to benefit other low‐melting‐point metal sulfoselenides for solar cell applications. [ABSTRACT FROM AUTHOR]

This study explores the growth of Sb2Se3 films on soda-lime glass (SLG) surfaces using the chemical molecular beam deposition (CMPD) method at a substrate temperature of 500°C. High-purity binary compounds, Sb2Se3 and Se, were employed as source materials for film deposition. Scanning electron microscopy (SEM) was employed to investigate the morphological characteristics of the Sb2Se3 films. Furthermore, the influence of temperature on the grain size and crystallographic orientation in selenium films was examined. Samples were obtained from a selenium source at temperatures of 370°C and 430°C. The results indicate that increasing the temperature of the selenium source results in the formation of larger grains and the presence of rod-shaped grains of Sb2Se3 aligned parallel to the substrate. A sample obtained at 370°C exhibited grains larger than 2 µm in size, evenly distributed across the substrate surface, indicating a uniform growth process. In contrast, when the temperature of the selenium source was raised to 430°C, considerably larger grains measuring approximately 4 μm were detected on the film surface substrate. X-ray diffraction analysis was conducted to gain insights into the crystalline phases and crystal structure of the Sb2Se3 films synthesized under different temperatures of the selenium source. The X-ray diffraction patterns displayed prominent peaks corresponding to the crystallographic planes (221) and (211), indicating the presence of strong crystalline phases. Additionally, peaks such as (020), (120), and (310) were observed in the X-ray patterns, further confirming the crystallinity of the films. [ABSTRACT FROM AUTHOR]

The strong Ti-O bonds in TiO2 and poor compatibility with Sb2Se3 result in poor performance when used as electron transport layers (ETL) for Sb2Se3 solar cells. Therefore, cadmium sulfide is usually used as a buffer layer to improve its compatibility. In the present work, we deposited a layer of CdS by spin coating method on TiO2 ETL and fabricated TiO2/CdS dual ETL. The CdS layer improved the electronic properties of TiO2 and grain orientation of Sb2Se3 thin films. As a result, the average short circuit current and fill factor of Sb2Se3 solar cells were improved, and the final champion power conversion efficiency was enhanced from 2.6% to 4.71%. This study supplied a route for the application of titanium dioxide as a broad band gap electron transfer material for Sb2Se3 solar cells. Highlights: We adopt a facile spin-coating method to fabricated CdS buffer layer on TiO2 electron transport layer. The CdS buffer layer altered the orientation of Sb2Se3 film and enhanced its performance. The champion PCE of Sb2Se3 solar cells was enhanced to 4.71% from 2.60% by inserting the CdS buffer layer. [ABSTRACT FROM AUTHOR]

Sb2Se3, a promising thin‐film photovoltaic (TFPV) absorber material known for its non‐toxic nature, abundance on Earth, and stability has the inherent limitations of low doping density of 1013 cm−3 and poor carrier mobility of 1.5 cm2 V−1 s−1, leading to a low built‐in potential and inefficient carrier collection. To address these challenges and enhance the built‐in potential and carrier collection, an effective hole‐transport layer (HTL), e.g. CdS, which contains toxic components is used. A less‐toxic alternative is explored: ZnSe as the electron‐transport layer (ETL) to mitigate this issue. In this study, the performance is evaluated of Sb2Se3/ZnSe solar cells using six different HTLs (CuSCN, MoSe2, NiO, Spiro‐OMeTAD, SnS, MoOx) through the utilization of the SCAPS‐1D modeling tool. The HTL plays a critical role in improving the effectiveness of the built‐in potential, enhancing carrier collection, and suppressing back surface recombination. The analysis involves varying the thickness and doping concentration of the absorber, buffer, and HTLs, and exploring the impact of temperature, series and shunt resistance, and the metal work function of the back contact. Among the tested devices, the one with NiO as the HTL demonstrates the highest efficiency, exhibiting a VOC (open‐circuit voltage) of 0.81 V and a PCE (power conversion efficiency) of 24.07%. [ABSTRACT FROM AUTHOR]

Sb2Se3, as an earth-abundant and low-toxic material, has emerged as one of the most interesting absorbers for clean renewable power generation technologies. Due to its optical properties, especially bandgap and absorption coefficient, the number of papers on Sb2Se3-based solar cells has been constantly increasing in the last ten years, and its power conversion efficiency has raised from 1% in 2014 to 10.57% in 2022. In this review, different Sb2Se3 solar cells' fabrication technologies based on physical vapor deposition are described and correlated to the texture coefficient (ribbon orientation). Moreover, recent research works of the most promising solar cell configurations with different electron-transporting layers and hole-transporting layers are analyzed with a special emphasis on photovoltaic performances. Furthermore, different Sb2Se3 doping techniques are discussed. All these aspects are considered as new strategies to overcome the Sb2Se3 solar cell's actual limitations. [ABSTRACT FROM AUTHOR]

Antimony (Sb) chalcogenides, particularly antimony selenide (Sb2Se3), have gained attention as promising semiconductor materials in order to creat and advancement of competitive solar cells. These materials exhibit a range of desirable qualities, such as excellent absorption rate, ability to modify band gap, and plentiful in the crust of the earth. This article describes an antimony selenide (Sb2Se3) absorber based high-efficient thin film solar cell (TFSC) with copper oxide (Cu2O) as as back surface field (BSF) by dint of Al/ITO/TiO2/Sb2Se3/Cu2O/Ni heterostructure using SCAPS-1D Simulator. This research entails an in-depth assessment of various physical and electrical characteristics of every solar active semiconductorof TiO2,Sb2Se3, and Cu2O covering the thickness of each layer, concentration of carrier doping, defect density in the bulk and at the interface, carrier generation rate together with recombination. Initially, the variation in photovoltaic parameters of open circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), power conversion efficiency (PCE), and quantum efficiency (QE) investigated without the BSF layer, followed by a comprehensive analysis on the role of Cu2O BSF layer for enhancing cell's performance explored systematically. The proposed heterostructure shows improved PCE of over 32% (which was 21% without BSF) with JSC of 37.492 mA/cm2, VOC of 1.024 V, and FF of 83.595%. Thus, the utilisation of a heterostructure comprising Sb2Se3 absorber and copper oxide Cu2O BSF layer demonstrates significant promise in the development and production the high-efficiency greenery thin-film solar cells (TFSCs). [ABSTRACT FROM AUTHOR]

SbxSey thin-films were deposited by chemical-molecular beam deposition (CMBD) on soda-lime glass from antimony (Sb) and selenium (Se) precursors. Due to the separate control of Sb (between 980 and 1025°C) and Se (between 415 and 470°C) source temperature, thin films of antimony selenide with different component ratios carry out obtained. The investigation encompassed a comprehensive analysis of the elemental and phase composition, like the crystal structure, of SbxSey films. To achieve this, a combination of analytical techniques was employed, including energy-dispersive X-ray microanalysis, atomic force microscopy, Raman spectroscopy, X-ray diffraction, and scanning electron microscopy. The bandgap of the films was ascertained in the region 1.03–1.25 eV through the acquisition of absorption spectra using a spectrophotometer. This enabled the determination of the films' optical properties and facilitated further analysis of their potential applications. The physical properties of SbxSey films with various ratio were researched. [ABSTRACT FROM AUTHOR]

Sb 2 Se 3 is a promising absorber material for photovoltaic applications owing to its suitable bandgap and high absorption coefficient. However, the initial deposition of the precursor Sb 2 Se 3 thin films using thermal evaporation with an annealing process, results in poor crystallinity and inadequate Se content, leading to significantly low device efficiency and some deep-level detrimental defects. To address these issues, herein, we propose a facile thermal diffusion post-selenization method to supplement Se into post-deposited Sb 2 Se 3 thin films. This process not only achieves stoichiometric composition but also improves the crystallinity of the samples, thereby reducing defect density and carrier recombination. As a result, the efficiency of the fabricated Mo/Sb 2 Se 3 /CdS/ITO/Ag solar cell is significantly enhanced from 0.66% to 3.29%. [ABSTRACT FROM AUTHOR]

The efficiency of antimony selenide (Sb2Se3) solar cells is still limited by significant interface and deep‐level defects, in addition to carrier recombination at the back contact surface. This paper investigates the use of lithium (Li) ions as dopant for Sb2Se3 films, using lithium hydroxide (LiOH) as a dopant medium. Surprisingly, the LiOH solution not only reacts at the back surface of the Sb2Se3 film but also penetrate inside the film along the (Sb4Se6)n molecular chain. First, the Li ions modify the grain boundary's carrier type and create an electric field between p‐type grain interiors and n‐type grain boundary. Second, a gradient band structure is formed along the vertical direction with the diffusion of Li ions. Third, carrier collection and transport are improved at the surface between Sb2Se3 and the Au layer due to the reaction between the film and alkaline solution. Additionally, the diffusion of Li ions increases the crystallinity, orientation, surface evenness, and optical electricity. Ultimately, the efficiency of Sb2Se3 solar cells is improved to 7.57% due to the enhanced carrier extraction, transport, and collection, as well as the reduction of carrier recombination and deep defect density. This efficiency is also a record for CdS/Sb2Se3 solar cells fabricated by rapid thermal evaporation. [ABSTRACT FROM AUTHOR]

Benefiting from excellent optoelectronic properties and facile fabrication, Sb2Se3‐based semiconductor devices have drawn great attention in the last decade; in particular, Sb2Se3‐based solar cells and photodetectors have demonstrated decent performance metrics. However, the current research on Sb2Se3 devices is mainly focused on material and device processing and optimization, and few studies have been conducted on charge transport, which is limiting the further development of Sb2Se3‐based devices. To address this issue, post‐treatment techniques are introduced and their influence on the charge carrier dynamics of Sb2Se3 thin films is fully investigated. The charge carrier mobility of evaporated Sb2Se3 thin films is increased by an order of magnitude from 0.02 to 0.4 cm2 V−1 s−1 after the Se post‐treatment. Based on the optimized Sb2Se3 thin films, ultra‐fast photodiodes are further developed and a record‐fast response of 37 ns is achieved. Prototypical devices also demonstrated great potential for high‐speed photodetection in practical applications. [ABSTRACT FROM AUTHOR]

Synergistically boosting reaction kinetics and suppressing polyselenide shuttle effect by Ti 3 C 2 T x /Sb 2 Se 3 film anode enables excellent sodium storage performance. [Display omitted] • A flexible film with unique structure of Sb 2 Se 3 nanowires uniformly anchored between Ti 3 C 2 T x nanosheets was successfully fabricated. • The improved electrochemical reaction kinetics and mechanism are systematically analysed by a series of ex-situ characterization techniques and DFT. • Superior cycling stability and remarkable rate capability are achieved as anode for sodium-ion half and full batteries. Antimony selenide (Sb 2 Se 3), with rich resources and high electrochemical activity, including in conversion and alloying reactions, has been regarded as an ideal candidate anode material for sodium-ion batteries. However, the severe volume expansion, sluggish kinetics, and polyselenide shuttle of the Sb 2 Se 3 -based anode lead to serious pulverization at high current density, restricting its industrialization. Herein, a unique structure of Sb 2 Se 3 nanowires uniformly anchored between Ti 3 C 2 T x (MXene) nanosheets was prepared by the electrostatic self-assembly method. The MXene can impede the volume expansion of Sb 2 Se 3 nanowires in the sodiation process. Moreover, the Sb 2 Se 3 nanowires can reduce the restacking of Ti 3 C 2 T x nanosheets and enhance electrolyte accessibility. Furthermore, density functional theory calculations confirm the increased reaction kinetics and better sodium storage capability through the composite of Ti 3 C 2 T x with Sb 2 Se 3 and the high adsorption capability of Ti 3 C 2 T x to polyselenides. Therefore, the resultant Sb 2 Se 3 /Ti 3 C 2 T x anodes show high rate capability (369.4 mAh/g at 5 A/g) and cycling performance (568.9 and 304.1 mAh/g at 0.1 A/g after 100 cycles and at 1.0 A/g after 500 cycles). More importantly, the full sodium-ion batteries using the Sb 2 Se 3 /Ti 3 C 2 T x anode and Na 3 V 2 (PO 4) 3 /carbon cathode exhibit high energy/power densities and outstanding cycle performance. [ABSTRACT FROM AUTHOR]

Sb2Se3, as an earth-abundant and low-toxic material, has emerged as one of the most interesting absorbers for clean renewable power generation technologies. Due to its optical properties, especially bandgap and absorption coefficient, the number of papers on Sb2Se3-based solar cells has been constantly increasing in the last ten years, and its power conversion efficiency has raised from 1% in 2014 to 10.57% in 2022. In this review, different Sb2Se3 solar cells’ fabrication technologies based on physical vapor deposition are described and correlated to the texture coefficient (ribbon orientation). Moreover, recent research works of the most promising solar cell configurations with different electron-transporting layers and hole-transporting layers are analyzed with a special emphasis on photovoltaic performances. Furthermore, different Sb2Se3 doping techniques are discussed. All these aspects are considered as new strategies to overcome the Sb2Se3 solar cell’s actual limitations.

Abstract The efficiency of antimony selenide (Sb2Se3) solar cells is still limited by significant interface and deep‐level defects, in addition to carrier recombination at the back contact surface. This paper investigates the use of lithium (Li) ions as dopant for Sb2Se3 films, using lithium hydroxide (LiOH) as a dopant medium. Surprisingly, the LiOH solution not only reacts at the back surface of the Sb2Se3 film but also penetrate inside the film along the (Sb4Se6)n molecular chain. First, the Li ions modify the grain boundary's carrier type and create an electric field between p‐type grain interiors and n‐type grain boundary. Second, a gradient band structure is formed along the vertical direction with the diffusion of Li ions. Third, carrier collection and transport are improved at the surface between Sb2Se3 and the Au layer due to the reaction between the film and alkaline solution. Additionally, the diffusion of Li ions increases the crystallinity, orientation, surface evenness, and optical electricity. Ultimately, the efficiency of Sb2Se3 solar cells is improved to 7.57% due to the enhanced carrier extraction, transport, and collection, as well as the reduction of carrier recombination and deep defect density. This efficiency is also a record for CdS/Sb2Se3 solar cells fabricated by rapid thermal evaporation.

There has been a recent surge in interest toward thin film-based solar cells, specifically new absorber materials composed by Earth-abundant and non-toxic elements. Among these materials, antimony selenide (Sb2Se3) is a good candidate due to its peculiar properties, such as an appropriate bandgap that promises a theoretical maximum power conversion efficiency of 33% and an absorption coefficient of around 105 cm−1, enabling its use as a thin film absorber layer. However, charge carrier transport has been revealed to be problematic due to its cumbersome structure and the lack of a doping strategy. In this work, we aim to provide a clear picture of the state-of-the-art regarding research on Sb2Se3-based solar cells and its prospects, from the successful achievements to the challenges that are still to be overcome. We also report on the key parameters of antimony selenide with a close focus on the different characteristics associated with films grown from different techniques. [ABSTRACT FROM AUTHOR]

The barrier at CdTe/metal interface severely limits the efficiency of CdTe photovoltaic devices. Herein, the effectiveness of a thermally evaporated Sb2Se3 buffer layer as a back contact in CdTe solar cells is investigated, revealing a significant enhancement in device performance. Through optimization of Sb2Se3 thickness, a remarkable increase in the open‐circuit voltage (VOC) to 804 mV is achieved, leading to a substantial efficiency improvement of 12.84% when compared to the Au‐only back contact device. X‐ray photoelectron spectroscopy (XPS) reveals a well‐matched energy band alignment at CdTe/Sb2Se3 interface, confirming favorable conditions for hole transport. To further enhance the device performance, Cu doping is implemented in the Sb2Se3 film, resulting in additional improvements to the VOC and fill factor (FF) of the Cu‐doped configuration to 819 mV and 72.35%, respectively, while also enhancing the overall efficiency to 14.3%. [ABSTRACT FROM AUTHOR]

This work investigates the effect of band structure, optical spectra, computed elastic coefficients, Bulk-to-Shear modulus ratio, Young's modulus and Poisson's ratio in metal selenide compounds and their influence on electronic, optical, and elastic properties of bulk crystals using density functional theory (DFT). By studying the structural and geometrical parameters, we show that the V–VI group compound has a direct bandgap of 0.887 eV and the band structure can be explained by a partial density of states (PDOS) plot. By using Pugh's formation, the bulk-to-shear ratio can be significant in precisely determining the ductility of a material. Poisson's ratio can provide information to examine whether the lattice crystal is ionic or covalent. Our elastic data show that the orthorhombic system is found to be unstable. The optical spectra (high absorption coefficient of 1. 7 8 × 1 0 5 cm − 1 , dielectric coefficient of 8.61 and reflective index of 2.93) of our current work would be beneficial to explore the applications of optoelectronic devices, especially in light-harvesting materials, covering the UV region. Our findings advance the knowledge of the structural, electronic, optical, vibrational, and mechanical properties of Sb2Se3, the key to their use, and explained the potential applications in photovoltaics perspectives. [ABSTRACT FROM AUTHOR]

The development of multifunctional devices could represent a significant advancement in meeting the need for nano and micro technologies. Therefore, we have developed a Ag/Sb2Se3/FTO-based multifunction device having nanostructures, which works as an ultraviolet (UV) photodetector and a switching device. Our theory suggests how oxygen formation leads to detection in the UV range rather than detection in the infrared range, which is the natural detection range of Sb2Se3. The m–s–m photodetector device is based on the photoconductive phenomenon, and ultrafast transient absorption spectroscopy has been extensively used to investigate the charge carrier dynamics of Sb2Se3 films of 500 nm. At two distinct excitations, 375 nm UV and 532 nm visible light, and a pulse energy of 1 J per pulse, the effect of annealing on the charge carrier relaxation of the films was investigated. The kinetics of the hot charge carrier's decay and recombination were studied for both as-grown and annealed films. The proposed theory is analyzed with the help of X-ray photoelectron spectroscopy and density functional theory studies. The device shows external quantum efficiency values of 2.9 and 1.3 at 375 and 386 nm, respectively. The rise time to fall time ratio was 0.29/0.30 s at 375 nm irradiation at 2 V bias at a power density of 32 mW/cm2. The same device shows bipolar resistive switching, in which resistance shifts from a high resistance state to a low resistance state in a voltage sweep from −1 to 0 V and then 0 to 1 V. The result of the switching phenomenon is reasonably justified by the electrochemical metallization phenomenon. An outstanding accomplishment in electronic devices is combining two different features on a single device. [ABSTRACT FROM AUTHOR]

The antimony selenide thin film solar cells technology becomes promising due to its excellent anisotropic charge transport and brilliant light absorption capability. Especially, the device performance heavily relies on the vertically oriented Sb2Se3 grain to promote photoexcited carrier transport. However, crystalline orientation control has been a major issue in Sb2Se3 thin film solar cells. Herein, a new strategy has been developed to tailor the crystal growth of Sb2Se3 ribbons perpendicular to the substrate by using the structural heterostructured CdS buffer layer. The heterostructured CdS buffer layer is formed by a dual layer of CdS nanorods and nanoparticles. The hexagonal CdS nanorods passivated by a thin cubic CdS nanoparticle layer can promote [211] and [221] directional growth of Sb2Se3 ribbons using a close space sublimation approach. The improved buffer/absorber interface, reduced interface defects, and recombination loss contribute to the improved device efficiency of 7.16%. This new structural heterostructured CdS buffer layer can regulate Sb2Se3 nanoribbons crystal growth and pave the way to further improve the low‐dimensional chalcogenide thin film solar cell efficiency. [ABSTRACT FROM AUTHOR]

The fabrication of Sb2Se3 thin-film solar cells deposited by a pulsed hybrid reactive magnetron sputtering (PHRMS) was proposed and examined for different growth conditions. The influence of growth temperature and Se pulse period were studied in terms of morphology, crystal structure, and composition. The Sb2Se3 growth showed to be dependent on the growth temperature, with a larger crystal size for growth at 270 °C. By controlling the Se pulse period, the crystal structure and crystal size could be modified as a function of the supplied Se amount. The solar cell performance for Sb2Se3 absorbers deposited at various temperatures, Se pulse periods and thicknesses were assessed through current-voltage characteristics. A power conversion efficiency (PCE) of 3.7% was achieved for a Sb2Se3 solar cell with 900 nm thickness, Sb2Se3 deposited at 270 °C and Se pulses with 0.1 s duration and period of 0.5 s. Finally, annealing the complete solar cell at 100 °C led to a further improvement of the Voc, leading to a PCE of 3.8%, slightly higher than the best reported Sb2Se3 solar cell prepared by sputtering without post-selenization. [ABSTRACT FROM AUTHOR]

In this paper, we have developed a time-dependent model to study defect growth in the absorber layer of Sb2Se3 thin film solar cells. This model has been integrated with the AMPS-1D simulation platform to investigate the impact of increasing defect density at different positions within the Sb2Se3 layer on the electrical parameters of the solar cell. We adopted the Gloeckler standard model for thin films in AMPS to represent Sb2Se3 materials. The study focuses on tracking the degradation of device performance parameters as donor-like mid-gap states accumulate in the Sb2Se3 layer over time. We monitored the variation of key electrical parameters, including efficiency (η), fill factor (FF), open-circuit voltage (Voc), and short-circuit current (Jsc), at three different positions: the interface with CdS, the bulk of the Sb2Se3 layer, and the interface with the top contact. These positions are susceptible to increasing defect density during prolonged operation and irradiation. To pinpoint the most sensitive part of the Sb2Se3 layer to defect accumulation, we divided the layer into three sub-layers. Our simulation results highlight that the CdS/Sb2Se3 interface is the most vulnerable position in the cell when it comes to defect accumulation. The practical implication of this study is that special attention should be given to the CdS/Sb2Se3 interface during material deposition and the development of high-stability Sb2Se3 thin film solar cells.“

Despite the recent success of CdS/Sb2Se3 heterojunction devices, cadmium toxicity, parasitic absorption from the relatively narrow CdS band gap (2.4 eV) and multiple reports of inter‐diffusion at the interface forming Cd(S,Se) and Sb2(S,Se)3 phases, present significant limitations to this device architecture. Among the options for alternative partner layers in antimony chalcogenide solar cells, the wide band gap, non‐toxic titanium dioxide (TiO2) has demonstrated the most promise. It is generally accepted that the anatase phase of the polymorphic TiO2 is preferred, although there is currently an absence of analysis with regard to phase influence on device performance. This work reports approaches to distinguish between TiO2 phases using both surface and bulk characterization methods. A device fabricated with a radio frequency (RF) magnetron sputtered rutile‐TiO2 window layer (FTO/TiO2/Sb2Se3/P3HT/Au) achieved an efficiency of 6.88% and near‐record short–circuit current density (Jsc) of 32.44 mA cm−2, which is comparable to established solution based TiO2 fabrication methods that produced a highly anatase‐TiO2 partner layer and a 6.91% efficiency device. The sputtered method introduces reproducibility challenges via the enhancement of interfacial charge barriers in multi‐phase TiO2 films with a rutile surface and anatase bulk. This is shown to introduce severe S‐shaped current–voltage (J–V) distortion and a drastic fill–factor (FF reduction in these devices. [ABSTRACT FROM AUTHOR]

Metalenses are emerging as an alternative to digital micromirror devices (DMDs), with the advantages of compactness and flexibility. The exploration of metalenses has ignited enthusiasm among optical engineers, positioning them as the forthcoming frontier in technology. In this paper, we advocate for the implementation of the phase-change material, Sb 2 Se 3 , capable of providing swift, reversible, non-volatile focusing and defocusing within the 1550 nm telecom spectrum. The lens, equipped with a robust ITO microheater, offers unparalleled functionality and constitutes a significant step toward dynamic metalenses that can be integrated with beamforming applications. After a meticulously conducted microfabrication process, we showcase a device capable of rapid tuning (0.1 MHz level) for metalens focusing and defocusing at C band communication, achieved by alternating the PCM state between the amorphous and crystalline states. The findings from the experiment show that the device has a high contrast ratio for switching of 28.7 dB. [ABSTRACT FROM AUTHOR]

Antimony selenide (Sb2Se3) material has been brought into sharp focus in the solar cell field due to its remarkable performance in recent times. Solar cell efficiency increases daily because of the excellent properties of Sb2Se3 material and progressive optimisation of each layer, especially the hole-transporting layer (HTL); it suppresses the recombination of the back surface and increases the built-in potential and efficiency. In this work, we used Sb2Se3 as an absorber layer and compared the behaviour of typical hole transport materials (HTMs) (Spiro-OMeTAD, CuSCN, and CuI) and their influence on device performance. The Sb2Se3 photovoltaic model with different HTMs was studied by SCAPS (version 3.3.10) software. Efficiency is highly influenced by light source and intensity. Thickness and defect density of the Sb2Se3 layer, the work function of the back contact, and series and shunt resistances also play an essential role in the better execution of solar cells. The performance of the device is enhanced when the transmission percentage increases at the front contact. The metalwork function must be 5 eV to attain a highly efficient PV cell, and after optimisation, CuI is the best HTM with a 23.48% efficiency. [ABSTRACT FROM AUTHOR]

The design and configuration of solar cells are critical for photovoltaic action and achieving high efficiency. Herein, the double‐absorber solar‐cell architecture of low‐bandgap Sb2Se3 and high‐bandgap Cu2ZnSnS4 (CZTS) absorbers for broader spectrum utilization leading to higher efficiency are comprehensively analyzed. The cost‐effective chalcogenides CZTS and Sb2Se3 for high‐efficiency dual‐absorber configuration to show the possibility of high wattage at a lower cost are taken. The crucial parameters of bandgap pair and thickness are optimized for synergetic device performance and optimal utilization of the incident spectrum. By introducing an additional absorber–absorber interface, the interfacial defect at CZTS/Sb2Se3 is lowered by optimizing the band offset for the efficient functioning of a double–absorber device. The proposed device has straightforward NiO/CZTS/Sb2Se3/AZO architecture suitable for low‐cost fabrication with high efficiency of 30.9%. [ABSTRACT FROM AUTHOR]

The low bandgap antimony selenide (Sb2Se3) and wide bandgap organic solar cell (OSC) can be considered suitable bottom and top subcells for use in tandem solar cells. Some properties of these complementary candidates are their non-toxicity and cost-affordability. In this current simulation study, a two-terminal organic/Sb2Se3 thin-film tandem is proposed and designed through TCAD device simulations. To validate the device simulator platform, two solar cells were selected for tandem design, and their experimental data were chosen for calibrating the models and parameters utilized in the simulations. The initial OSC has an active blend layer, whose optical bandgap is 1.72 eV, while the initial Sb2Se3 cell has a bandgap energy of 1.23 eV. The structures of the initial standalone top and bottom cells are ITO/PEDOT:PSS/DR3TSBDT:PC71BM/PFN/Al, and FTO/CdS/Sb2Se3/Spiro-OMeTAD/Au, while the recorded efficiencies of these individual cells are about 9.45% and 7.89%, respectively. The selected OSC employs polymer-based carrier transport layers, specifically PEDOT:PSS, an inherently conductive polymer, as an HTL, and PFN, a semiconducting polymer, as an ETL. The simulation is performed on the connected initial cells for two cases. The first case is for inverted (p-i-n)/(p-i-n) cells and the second is for the conventional (n-i-p)/(n-i-p) configuration. Both tandems are investigated in terms of the most important layer materials and parameters. After designing the current matching condition, the tandem PCEs are boosted to 21.52% and 19.14% for the inverted and conventional tandem cells, respectively. All TCAD device simulations are made by employing the Atlas device simulator given an illumination of AM1.5G (100 mW/cm2). This present study can offer design principles and valuable suggestions for eco-friendly solar cells made entirely of thin films, which can achieve flexibility for prospective use in wearable electronics. [ABSTRACT FROM AUTHOR]

In this paper, we presented a numerical study of a CdS/Sb2Se3 mono junction solar cell (SC) using the SC Capacitive Simulator (SCAPS-1D). We validated an experimental work using a variety of Sb2Se3 experimental parameters, and the results showed excellent agreement between numerical and experimental J-V curves, yielding a PCE of 7.54%.To continue, we analyzed the impact of Sb2Se3 thin layer thickness, charge carrier concentration, bulk defect density, and interface defect (CdS/Sb2Se3) on solar cell characteristics. With the optimum Sb2Se3 layer thickness of 1.2 µm, carrier concentration of 1015 cm−3, bulk defect of 1013 cm−3, and CdS/Sb2Se3 interface defect densities of 1010 cm−2, we were able to attain an efficiency of 16.62%, Jsc = 35.38 mA/cm2, Voc = 0.66 V, and FF = 70.33%. Finally, we investigated the insertion effect of n-GaAs (ETL) and P+-CuO HTL (BSF) on Sb2Se3 solar cell efficiency. The novel ITO/n-CdS/n-GaAs/p-Sb2Se3/p+-CuO HTL/Au heterostructure achieved a huge efficiency of 19.60%. [ABSTRACT FROM AUTHOR]

Optimizing thin‐film‐based solar cells' efficiency is essential for expanding renewable energy deployment. Fundamental device properties such as life‐span and optical properties must be enhanced simultaneously to reduce recombination and losses. Herein, the design and numerical study of an efficient Sb2Se3‐based dual heterojunction (n‐ZnSe/p‐Sb2Se3/p+‐MoSe2) photovoltaic cell with the help of SCAPS‐1D simulation software by using the physical parameters of various layers are presented. The thickness and doping of each layer are considered during the optimization of the device. The work functions of back and front contact also affect the overall performance. Defects in each layer and interface defects are highly responsible for the increment in series resistance. Thus, these defects are also studied. The efficiency improved significantly from 22.52% to 24.57% when MoSe2 is used as a back surface field (BSF) layer. The results demonstrate that the addition of BSF significantly increased the open‐circuit voltage, short‐circuit current density, and fill factor, all of which are within the Shockley–Queisser limits of a dual heterojunction solar cell. This study indicates the possibility of producing highly efficient Sb2Se3 heterojunction‐based solar cells. [ABSTRACT FROM AUTHOR]

• Influence of Sb/Se ratio of Sb 2 Se 3 films were investigated. • Sb 2 Se 3 films with different compositions fabricated by CMBD method from separate sources of Sb and Se. • The Se content in the solid phase is directly proportional to the Se content in the vapour phase during the growth process. • Sb 2 Se 3 thin films with micro-sized crystal grains exhibit (hk 1) preferential orientation at the stoichiometric composition. Sb x Se y thin-films were obtained by chemical-molecular beam deposition (CMBD) on soda-lime glass from Sb and Se precursors. By the precise control of the Sb/Se ratio, Sb 2 Se 3 thin films with stoichiometric composition were successfully obtained. The elemental and phase composition, as well as the crystal structure of Sb x Se y thin-films, were studied by energy-dispersive X-ray microanalysis, X-ray diffraction, Raman spectroscopy, scanning electron microscopy and atomic force microscopy. The optical bandgap of the films was determined from the absorption spectra acquired by a spectrophotometer. The physical properties of Sb x Se y thin films with different compositions were investigated. [ABSTRACT FROM AUTHOR]

Antimony selenide (Sb2Se3) is emerging as a promising photovoltaic material owing to its excellent photoelectric property. However, the low carrier transport efficiency, and detrimental surface oxidation of the Sb2Se3 thin film greatly influenced the further improvement of the device efficiency. In this study, the introduction of tellurium (Te) can induce the benign growth orientation and the desirable Sb/Se atomic ratio in the Te-Sb2Se3 thin film. Under various characterizations, it found that the Te-doping tended to form Sb2Te3-doped Sb2Se3, instead of alloy-type Sb2(Se,Te)3. After Te doping, the mitigation of surface oxidation has been confirmed by the Raman spectra. High-quality Te-Sb2Se3 thin films with preferred [hk1] orientation, large grain size, and low defect density can be successfully prepared. Consequently, a 7.61% efficiency Sb2Se3 solar cell has been achieved with a VOC of 474 mV, a JSC of 25.88 mA/cm2, and an FF of 64.09%. This work can provide an effective strategy for optimizing the physical properties of the Sb2Se3 absorber, and therefore the further efficiency improvement of the Sb2Se3 solar cells. [ABSTRACT FROM AUTHOR]

Antimony selenide (Sb2Se3) thin film solar cells were prepared by vapor transport deposition, and cesium chloride (CsCl2) solution was used to treat the upper interface of the device. Meanwhile, a series of characterizations of the thin film and the device were also performed. The study shows that the back contact treatment of CsCl2 solution can not only improve the carrier collection and reduce upper interface recombination of the device, but also optimize the crystallinity, surface roughness and optoelectronic performance of thin film. Based on the device structure of FTO/CdS/Sb2Se3/CsCl2/Au, a high-efficiency Sb2Se3 thin film solar cell with efficiency of 6.32% are obtained, which is 12% higher than that of the basic device. The research may provide some guidance to further development of Sb2 Se3 thin film solar cells and other similar types of semiconductor photovoltaic devices. [ABSTRACT FROM AUTHOR]

Antimony selenide (Sb2Se3) is a promising candidate for photodetector applications boasting unique material benefits and remarkable optoelectronic properties. Achieving high‐performance self‐powered Sb2Se3 photodetector through a synergistic regulation of absorber layer and heterojunction interface demonstrates great potential and needs essential investigation. In this study, an effective two‐step thermodynamic/kinetic deposition technique containing sputtered and selenized Sb precursor is implemented to induce self‐assembled growth of Sb2Se3 light absorbing thin film with large crystal grains and desirable [hk1] orientation, presenting considerable thin‐film photodetector performance. Furthermore, aluminum (Al3+) cation dopant is introduced to modify the optoelectronic properties of CdS buffer layer, and further optimize the Sb2Se3/CdS (Al) heterojunction interface quality. Thanks to the suppressed carrier recombination and enhanced carrier transport kinetics, the champion Mo/Sb2Se3/CdS (Al)/ITO/Ag photodetector exhibits self‐powered and broadband characteristics, accompanied by simultaneously high responsivity of 0.9 A W−1 (at 11 nW cm−2), linear dynamic range of 120 dB, impressive ON/OFF switching ratio over 106 and signal‐to‐noise ratio of 109, record total noise determined realistic detectivity of 4.78 × 1012 Jones, and ultra‐fast response speed with rise/decay time of 24/75 ns, representing the top level for Sb2Se3‐based photodetectors. This intriguing work opens up an avenue for its self‐powered broadband photodetector applications. [ABSTRACT FROM AUTHOR]