335 results on '"Sawaki, Nobuhiko"'
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2. Thick AlN epilayer grown by using the HVPE method
3. Optical properties of (1 1¯ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates
4. Maskless selective growth of semi-polar (1 12¯ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy
5. Mg segregation in a (1 1¯ 0 1) GaN grown on a 7° off-axis (0 0 1) Si substrate by MOVPE
6. Growth and properties of semi-polar GaN on a patterned silicon substrate
7. Semi-polar GaN LEDs on Si substrate
8. Mg doping in (1 1¯ 0 1)GaN grown on a 7° off-axis (0 0 1)Si substrate by selective MOVPE
9. Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
10. Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN using Tungsten Mask
11. Raman scattering study of the immiscible region in InGaAsP grown by LPE on (100) and (111) GaAs
12. Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (0 0 1) Si substrate by metalorganic vapor phase epitaxy
13. The C-V Profile of Heavily Silicon δ -doped GaAs Grown by MBE
14. Growth of ( [formula omitted]) GaN on a 7-degree off-oriented (0 0 1)Si substrate by selective MOVPE
15. Growth of a GaN crystal free from cracks on a (1 1 1)Si substrate by selective MOVPE
16. Fabrication of GaN/AlGaN heterostructures on a (1 1 1)Si substrate by selective MOVPE
17. Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
18. Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN Using Tungsten Mask
19. Fabrication of selective-area growth InGaN LED by mixed-source hydride vapor-phase epitaxy
20. Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer.
21. Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy
22. Vertical-Type Blue Light Emitting Diode by Mixed-Source Hydride Vapor Phase Epitaxy Method
23. AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method
24. メソスコピックディスクにおける電子の伝導と散乱((2)メゾスコピック系における量子カオスと量子輸送,京大基研短期研究会「量子カオス : 理論と実験の現状」,研究会報告)
25. Mechanism of light emission and manufacturing process of vertical-type light-emitting diode grown by hydride vapor phase epitaxy
26. Growth of AlN layer on patterned sapphire substrate by hydride vapor phase epitaxy
27. 有機金属気相法で作製したInGaN厚膜の成長過程のTEM観察 : 組成不均一の発生(<小特集>III族窒化物半導体の結晶成長はどこまで進んだか)
28. Vertical‐Type Blue Light Emitting Diode by Mixed‐Source Hydride Vapor Phase Epitaxy Method.
29. Structural characterization of GaN laterally overgrown on a (111)Si substrate
30. Characterizations of graded AlGaN epilayer grown by HVPE
31. Characterization of carbon microspheres grown by HVPE
32. III-nitride Research at Nagoya
33. Growth of GaN on Metallic Compound Graphite Substrate Using Hydride Vapor Phase Epitaxy
34. The growth of GaN on the metallic compound graphite substrate by HVPE
35. Development of the Hybrid Conjugated Polymer Solar Cell Based on GaN Quantum Dots
36. Strain relaxation in thick ($1{\bar {1}}01$) InGaN grown on GaN/Si substrate
37. Impurity incorporation in semipolar (1-1 0 1) GaN grown on an Si substrate
38. Ultraviolet Light Emitting Diode with High Quality Epilayer Grown by Hydride Vapor Phase Epitaxy
39. Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy
40. A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy
41. Crystal Orientation of GaN Nanostructures Grown on Al2O3and Si(111) with a Zr Buffer Layer
42. High efficiency InGaN solar cell with a graded p-InGaN top layer
43. Crystal Orientation of GaN Nanostructures Grown on Al2O3 and Si(111) with a Zr Buffer Layer
44. Erratum: “Reduction of Efficiency Droop in Semipolar (1\bar101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates”
45. Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate
46. Drastic Reduction of Dislocation Density in Semipolar (1122) GaN Stripe Crystal on Si Substrate by Dual Selective Metal–Organic Vapor Phase Epitaxy
47. Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate
48. Semi-polar GaN LEDs on Si substrate
49. Reduction of Efficiency Droop in Semipolar (1\bar101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
50. HVPE growth of a -plane GaN on a GaN template (110)Si substrate
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