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Your search keyword '"Sapunov, Georgiy A."' showing total 14 results
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14 results on '"Sapunov, Georgiy A."'

1. High-speed MBE-grown 1550 nm wafer-fused VCSELs

Author

Sapunov, Georgiy, primary, Tian, Si Cong, additional, Blokhin, Sergei, additional, Kovach, Iakov, additional, Papylev, Denis, additional, Rochas, Stanislav, additional, Andryushkin, Vladislav, additional, Kolodeznyi, Evgenii, additional, Babichev, Andrey, additional, Gladyshev, Andrey, additional, Novikov, Innokenty, additional, Blokhin, Alexey, additional, Bobrov, Mikhail, additional, Maleev, Nikolay, additional, Voropaev, Kirill, additional, Ustinov, Victor, additional, Ahamed, Mansoor, additional, Shugurov, Konstantin, additional, Egorov, Anton, additional, Karachinsky, Leonid, additional, and Bimberg, Dieter, additional

Published
2024
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3. High-speed MBE-grown 1550 nm wafer-fused VCSELs

Author

Lei, Chun, Choquette, Kent D., Sapunov, Georgiy, Tian, Si-Cong, Blokhin, Sergey, Kovach, Iakov, Papylev, Denis, Rochas, Stanislav, Andryushkin, Vladislav, Kolodeznyi, Evgenii, Babichev, Andrey, Gladyshev, Andrey, Novikov, Innokenty, Blokhin, Alexey, Bobrov, Mikhail, Maleev, Nikolay, Voropaev, Kirill, Ustinov, Victor, Ahamed, Mansoor, Shugurov, Konstantin, Egorov, Anton, Karachinsky, Leonid, and Bimberg, Dieter

Published
2024
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4. Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems

Author

Babichev, Andrey, primary, Blokhin, Sergey, additional, Gladyshev, Andrey, additional, Karachinsky, Leonid, additional, Novikov, Innokenty, additional, Blokhin, Alexey, additional, Bobrov, Mikhail, additional, Maleev, Nikolay, additional, Andryushkin, Vladislav, additional, Kolodeznyi, Evgenii, additional, Denisov, Dmitrii, additional, Kryzhanovskaya, Natalia, additional, Voropaev, Kirill, additional, Ustinov, Victor, additional, Egorov, Anton, additional, Li, Hui, additional, Tian, Si-Cong, additional, Han, Saiyi, additional, Sapunov, Georgiy, additional, and Bimberg, Dieter, additional

Published
2023
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5. 1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs

Author

Rochas, Stanislav, Blokhin, Sergei, Babichev, Andrey, Karachinsky, Leonid, Novikov, Innokenty, Blokhin, Aleksey, Bobrov, Mikhail, Maleev, Nikolai, Andryushkin, Vladislav, Bougrov, Vladislav, Gladyshev, Andrey, Melnichenko, Ivan, Voropaev, Kirill, Zhumaeva, Irina, Ustinov, Victor, Li, Hiu, Tian, Si-Cong, Han, Saiyi, Sapunov, Georgiy, Egorov, Anton, and Bimberg, Dieter

Subjects
tunnel junction, туннельный переход, спекание пластин, strained quantum wells, wafer fusion, molecular-beam epitaxy, напряженные квантовые ямы, data transmission, VCSEL, молекулярно-пучковая эпитаксия, передача данных, ВИЛ
Abstract

High-speed vertical-cavity surface-emitting lasers of 1550 nm spectral range based on ten compressively strained In(Al)GaAs QWs were fabricated by molecular-beam epitaxy and direct double wafer-fusion technique. The devices demonstrate threshold current of 2 mA and maximum output optical power of 4.8 mW. The effect of saturable absorber was observed at a temperature above 50 °C. Small signal analysis revealed that modulation bandwidth f 3dB and the resonant frequency fR of 8 GHz and 12 GHz, respectively, can be reached for presented VCSELs design. The NRZ-mode data rate up to 20 Gbps at 20 °C across the distance of 1000 meters was demonstrated., Были изготовлены высокоскоростные вертикально излучающие лазеры (ВИЛ) спектрального диапазона 1550 нм на основе 10 напряженных In(Al)GaAs КЯ с использованием метода молекулярно-пучковой эпитаксии и двойного прямого молекулярного спекания эпитаксиальных пластин. Приборы демонстрируют пороговый ток 2 мА и максимальную выходную оптическую мощность 4,8 мВт. Эффект насыщающегося поглотителя наблюдался при температуре выше 50 °С. Малосигнальный анализ показал значения ширины полосы модуляции f 3dB и резонансной частоты fR 8 ГГц и 12 ГГц, соответственно. Была продемонстрирована скорость передачи данных до 20 Гбит/с в режиме NRZ при 20 °C на расстояние 1000 метров.

Published
2023
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6. Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

Author

Fedorov, Vladimir V., primary, Berdnikov, Yury, additional, Sibirev, Nickolay V., additional, Bolshakov, Alexey D., additional, Fedina, Sergey V., additional, Sapunov, Georgiy A., additional, Dvoretckaia, Liliia N., additional, Cirlin, George, additional, Kirilenko, Demid A., additional, Tchernycheva, Maria, additional, and Mukhin, Ivan S., additional

Published
2021
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7. XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires

Author

Koval, Olga Yu., primary, Fedorov, Vladimir V., additional, Bolshakov, Alexey D., additional, Eliseev, Igor E., additional, Fedina, Sergey V., additional, Sapunov, Georgiy A., additional, Udovenko, Stanislav A., additional, Dvoretckaia, Liliia N., additional, Kirilenko, Demid A., additional, Burkovsky, Roman G., additional, and Mukhin, Ivan S., additional

Published
2021
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9. Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane

Author

Koval, Olga Yu., primary, Fedorov, Vladimir V., additional, Bolshakov, Alexey D., additional, Fedina, Sergey V., additional, Kochetkov, Fedor M., additional, Neplokh, Vladimir, additional, Sapunov, Georgiy A., additional, Dvoretckaia, Liliia N., additional, Kirilenko, Demid A., additional, Shtrom, Igor V., additional, Islamova, Regina M., additional, Cirlin, George E., additional, Tchernycheva, Maria, additional, Serov, Alexey Yu., additional, and Mukhin, Ivan S., additional

Published
2020
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10. Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon

Author

Koval, Olga Yu., primary, Fedorov, Vladimir V., additional, Kryzhanovskaya, Natalia V., additional, Sapunov, Georgiy A., additional, Kirilenko, Demid A., additional, Pirogov, Evgeniy V., additional, Filosofov, Nikolay G., additional, Serov, Aleksei Yu., additional, Shtrom, Igor V., additional, Bolshakov, Alexey D., additional, and Mukhin, Ivan S., additional

Published
2020
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14. Synthesis and Optical Characterization of GaAs Epitaxial Nanoparticles on Silicon

Author

Sapunov, Georgiy A., Fedorov, Vladimir V., Koval, Olga Yu., Sharov, Vladislav A., Dvoretckaia, Liliia N., Mukhin, Ivan S., and Bolshakov, Alexey D.

Abstract

The integration of direct bandgap III–V materials on Si is one of the main bottlenecks on the way to cheap and highly efficient optoelectronic devices. The goal of this work is to study the formation and optical properties of GaAs nanoparticles synthesized on Si(111) by molecular beam epitaxy. It is demonstrated that GaAs tends to grow in the shape of faceted nanoparticles surrounded by the continuous layer of coalesced GaAs islands. The surface density and shape of the nanoparticles are strongly affected by the growth parameters. The nanostructures are studied via analysis of atomic force microscopy images to show their faceting with the {111}, {110}, and {31̅1} planes. Optical properties are studied by photoluminescence and Raman spectroscopy. Depending on the growth conditions, Raman spectra of individual epitaxial GaAs nanoparticles possess specific features typical for wurtzite GaAs, demonstrating the potential of the studied growth approach for the synthesis of the phase engineered nanostructures.

Published
2020
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