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29. Anomalous excitation-power-dependent photoluminescence of InGaAsN/GaAs T-shaped quantum wire

Author

Klangtakai, Pawinee, Sanorpim, Sakuntam, Karlsson, Fredrik, Holtz, Per-Olof, Pimanpang, Samuk, Onabe, Kentaro, Klangtakai, Pawinee, Sanorpim, Sakuntam, Karlsson, Fredrik, Holtz, Per-Olof, Pimanpang, Samuk, and Onabe, Kentaro

Abstract

The selected InGaAsN/GaAs T-shaped quantum wire (T-QWR) fabricated by metal organic vapor phase epitaxy has been investigated by microphotoluminescence (m-PL) and excitation-power-dependent mu-PL. The optical characteristics of one-dimensional structure were taken at low-temperature (4 K) and room temperature (RT) to clarify the intersection of two familiar quantum wells (QWs) in the [001] and [110] directions, named QW1 and QW2, respectively. For the excitation-power-dependent measurement, the intensity of the excitation source was used in the range of 0.001I(0) to I-0. The result shows that all of emissions related to QW1 and QWR peaks have a nonsymmetric line shape as evidenced by the tailing on the lower-energy side. All peaks shift to higher-energy side (blueshift) with the increase of the excitation power intensity. The blueshift and the low-energy tailing of PL peaks are attributed to the alloying effect. However, the emission peak related to QWR region shows a larger blueshift rate than that of QW1 on increasing of the excitation power intensity. This is an anomalous characteristic for the low-dimensional structure, affected by the large fluctuation state in the QWR region. This fluctuation state is combined of both edges of QWs (QW1 and QW2)., Funding Agencies|Institute for Promotion of Teaching Science and Technology (IPST); National Nanotechnology Center (NANOTEC), NSTDA, Ministry of Science and Technology, Thailand, through its program of Center of Excellence Network; Thailand Research Fund [TRG5280030]; Thai Government Stimulus Package 2 under the project for Establishment of Comprehensive Center for Innovative Food, Health Products and Agriculture [TKK2555]

Published
2014
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48. EFFECTS OF NITROGEN DOPING ON PHOTOVOLTAIC PROPERTY OF LEAD LANTHANUM ZIRCONATE TITANATE FERROELECTRIC CERAMICS.

Author

Phungsripheng, Siwas, Sanorpim, Sakuntam, and Wasanapiarnpong, Thanakorn

Subjects
*NITROGEN, *DOPING agents (Chemistry), *PHOTOVOLTAIC effect, *LEAD lanthanum zirconate titanate, *FERROELECTRIC ceramics, *PIEZOELECTRICITY
Abstract

For decades, the phenomenon effects of ferroelectric ceramics have been known and called the photostrictive effect. The photostrictive effect is the superposition of photovoltaic and piezoelectric effects and this study concentrated on the method to improve the photovoltaic effect and optical absorption edge of lead lanthanum zirconatetitanate [(Pb0.97La0.03) (Zr0.52Ti0.48)10.03,403 or PLZT, (3/52/48)] by nitrogen doping. The ceramics which were doped were prepared by replacing the content of the Ti02 precursor with TiN and mixed by ball milling in an ethanol medium. The bulk pellets of the doped PLZT ceramics exhibited a photocurrent (Iph) and photovoltage (Eph) higher than that of the undoped PLZT. These differences are due to the characteristics of the nitrogen ion substituted at the 0-site in the lattice of the PLZT unit cell. The UV/VIS spectroscopy data indicated that the range of the optical absorption edge of doped PLZT ceramics was wider than that of the undoped PLZT. This material has also the advantage of the improved conversion process of light energy to electrical energy. [ABSTRACT FROM AUTHOR]

Published
2013

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