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The intricate interplay between spin and lattice degrees of freedom in two-dimensional magnetic materials plays a pivotal role in modifying their magnetic characteristics, engendering hybrid quasiparticles, and implementing functional devices. Herein, we present our comprehensive and in-depth investigations on magnetic and lattice excitations of MnPSe3-xSx (x = 0, 0.5, and 1.5) alloys, utilizing temperature- and polarization-dependent Raman scattering. Our experimental results reveal the occurrence of multiple phase transitions, evidenced by notable changes in phonon self-energy and the appearance or splitting of phonon modes. These emergent phases are tied to the development of long and short-range spin-spin correlations, as well as to spin reorientations or magnetic instabilities. Our analysis of two-magnon excitations as a function of temperature and composition showcases their hybridization with phonons whose degree weakens with increasing x. Moreover, the suppression of spin-dependent phonon intensity in chemically most-disordered MnPSe3-xSx (x = 1.5) suggests that chalcogen substitution offers a control knob of tuning spin and phonon dynamics by modulating concurrently superexchange pathways and a degree of trigonal distortions.

Electronic liquid crystal (ELC) phases are spontaneous symmetry breaking states believed to arise from strong electron correlation in quantum materials such as cuprates and iron pnictides. Here, we report a direct observation of ELC phases in a Dirac nodal line (DNL) semimetal GdSbxTe2-x. Electronic nanostructures consisting of incommensurate smectic charge modulation and intense local nematic order are visualized by using spectroscopic imaging - scanning tunneling microscopy. As topological materials with symmetry protected Dirac or Weyl fermions are mostly weakly correlated, the discovery of such ELC phases are anomalous and raise questions on the origin of their emergence. Specifically, we demonstrate how chemical substitution generates these symmetry breaking phases before the system undergoes a charge density wave - orthorhombic structural transition. We further show how dopants can induce nematicity via quasiparticle scattering interference. Our results highlight the importance of impurities in realizing ELC phases and present a new material platform for exploring the interplay among quenched disorder, topology and electron correlation.

On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to its ultra-high carrier mobility and outstanding photo-responsivity. Here, we report a high-speed photodetector based on a multilayer 90 nm thick InSe integrated on a silicon nitride (SiN) waveguide. The device exhibits a low dark current of 10 nA at 1V bias, a remarkable photoresponsivity of 0.38 AW-1, and high external quantum efficiency of 48.4% measured at 5 V bias. This performance is tested at near-infrared (NIR) 976 nm wavelength under ambient conditions. Furthermore, using numerical and experimental investigations, the estimated absorption coefficient per unit length is 0.11dB/um. To determine the dynamic response of the photodetector, its small and large signal frequency response are also evaluated. A 3-dB radiofrequency (RF) bandwidth of 85 MHz is measured with an open-eye diagram observed at 1 Gbit/s data transmission. Given these outstanding optoelectronic merits, active photonic devices based on integrated multilayer InSe can be realized for a variety of applications including short-reach optical interconnects, LiDAR imaging, and biosensing., Comment: 15 pages, 6 figures

We investigate both the longitudinal thermal conductivity ($\kappa_{xx}$) and the planar thermal Hall conductivity ($\kappa_{xy}$) in the Kitaev spin liquid candidate of Co-based honeycomb antiferromagnet Na$_2$Co$_2$TeO$_6$ in a magnetic field ($B$) applied along the $a$ and $a^*$ axes. A finite $\kappa_{xy}$ is resolved for both field directions in the antiferromagnetic (AFM) phase below the N\'eel temperature of 27 K. The temperature dependence of $\kappa_{xy}/T$ shows the emergence of topological bosonic excitations. In addition, the field dependence of $\kappa_{xy}$ shows sign reversals at the critical fields in the AFM phase, suggesting the changes in the Chern number distribution of the topological magnons. Remarkably, a finite $\kappa_{xy}$ is observed in $B \parallel a^*$ between the first-order transition field in the AFM phase and the saturation field, which is prohibited in a disordered state by the two-fold rotation symmetry around the $a^*$ axis of the honeycomb lattice, showing the presence of a magnetically ordered state that breaks the two-fold rotation symmetry. Our results demonstrate the presence of topological magnons in this compound in the whole field range below the saturation field., Comment: 7 pages, 5 figures, and Supplementary Materials. To appear in Phys. Rev. Research

The layered transition metal dichalcogenide compounds 1T-TaS2 and 4H-TaS2 are well known for their exotic properties, which include charge density wave, superconductivity, Mott transition, etc., and lately quantum spin liquid. Here, we report the magnetic, transport and transmission electron microscopy study of the charge density wave and superconductivity in 6R-TaS2 which is a relatively less studied polymorph of this dichalcogenide TaS2. Our high temperature electron microscopy reveals multiple charge density wave transitions between room temperature and 650K. Magnetization, and the electrical resistivity measurements in the temperature range of 2-400 K reveal that 6R-TaS2 undergoes a charge density wave transition around 305 K and is followed by a transition to a superconducting state around 3.5 K. The low temperature specific heat measurement exhibits anomaly associated with the superconducting transition around 2.4 K. The estimated Ginzburg Landau parameter suggests that this compound lies at the extreme limit of type-II superconductivity.

Several areas have been improved with Deep Learning during the past years. Implementing Deep Neural Networks (DNN) for non-safety related applications have shown remarkable achievements over the past years; however, for using DNNs in safety critical applications, we are missing approaches for verifying the robustness of such models. A common challenge for DNNs occurs when exposed to out-of-distribution samples that are outside of the scope of a DNN, but which result in high confidence outputs despite no prior knowledge of such input. In this paper, we analyze three methods that separate between in- and out-of-distribution data, called supervisors, on four well-known DNN architectures. We find that the outlier detection performance improves with the quality of the model. We also analyse the performance of the particular supervisors during the training procedure by applying the supervisor at a predefined interval to investigate its performance as the training proceeds. We observe that understanding the relationship between training results and supervisor performance is crucial to improve the model's robustness and to indicate, what input samples require further measures to improve the robustness of a DNN. In addition, our work paves the road towards an instrument for safety argumentation for safety critical applications. This paper is an extended version of our previous work presented at 2019 SEAA (cf. [1]); here, we elaborate on the used metrics, add an additional supervisor and test them on two additional datasets., Comment: preprint. arXiv admin note: text overlap with arXiv:2103.15580

Integration of Machine Learning (ML) components in critical applications introduces novel challenges for software certification and verification. New safety standards and technical guidelines are under development to support the safety of ML-based systems, e.g., ISO 21448 SOTIF for the automotive domain and the Assurance of Machine Learning for use in Autonomous Systems (AMLAS) framework. SOTIF and AMLAS provide high-level guidance but the details must be chiseled out for each specific case. We initiated a research project with the goal to demonstrate a complete safety case for an ML component in an open automotive system. This paper reports results from an industry-academia collaboration on safety assurance of SMIRK, an ML-based pedestrian automatic emergency braking demonstrator running in an industry-grade simulator. We demonstrate an application of AMLAS on SMIRK for a minimalistic operational design domain, i.e., we share a complete safety case for its integrated ML-based component. Finally, we report lessons learned and provide both SMIRK and the safety case under an open-source licence for the research community to reuse., Comment: Accepted for publication in Software Quality Journal

Magnetic impurities deposited on topological superconductor candidate PbTaSe2 can introduce a non-splitting zero-energy state inside the superconducting gap, which has been proposed as a field-free platform for topological zero modes. However, it is still unclear how robust the topological state in PbTaSe2 is against magnetic impurities, which is related to the topological nature of the zero-energy state as well as its potential for quantum computation. In this work, we use scanning tunneling microscopy (STM) to study the topological surface state in the normal state of PbTaSe2 under the perturbation of magnetic impurities. We visualize the quasi-particle interference (QPI) arising from the topological surface state. We then deposit Fe impurities on the surface to form atomic Fe adatoms. We find that each Fe adatom sits at a unique interstitial position on the surface and features a local state at high energies, both of which are consistent with our first-principles calculation that further reveals its large magnetic moment. Our systematic Fe deposition and subsequent measurements show that the arc-like QPI pattern at the Fermi energy is robust with up to 3% Fe coverage where the atomic nature of Fe adatoms still holds. Our results provide evidence that the topological surface state at the Fermi energy in PbTaSe2 is robust against dilute magnetic impurities.

The anisotropic optical response of the layered, nodal-line semimetal ZrSiS at ambient and high pressure is investigated by frequency-dependent reflectivity measurements for the polarization along and perpendicular to the layers. The highly anisotropic optical conductivity is in very good agreement with results from density functional theory calculations and confirms the anisotropic character of ZrSiS. Whereas the in-plane optical conductivity shows only modest pressure-induced changes, we found strong effects on the out-of-plane optical conductivity spectrum of ZrSiS, with the appearance of two prominent excitations. These pronounced pressure-induced effects can neither be attributed to a structural phase transition according to our single-crystal x-ray diffraction measurements, nor can they be explained by electronic correlation and electron-hole pairing effects, as revealed by theoretical calculations. Our findings are discussed in the context of the recently proposed excitonic insulator phase in ZrSiS., Comment: 6 pages, 3 figures, accepted for publication in Phys. Rev. Lett

We demonstrate an on-demand source of microwave single photons with 71--99\% intrinsic quantum efficiency. The source is narrowband (300\unite{kHz}) and tuneable over a 600 MHz range around 5.2 GHz. Such a device is an important element in numerous quantum technologies and applications. The device consists of a superconducting transmon qubit coupled to the open end of a transmission line. A $\pi$-pulse excites the qubit, which subsequently rapidly emits a single photon into the transmission line. A cancellation pulse then suppresses the reflected $\pi$-pulse by 33.5 dB, resulting in 0.005 photons leaking into the photon emission channel. We verify strong antibunching of the emitted photon field and determine its Wigner function. Non-radiative decay and $1/f$ flux noise both affect the quantum efficiency. We also study the device stability over time and identify uncorrelated discrete jumps of the pure dephasing rate at different qubit frequencies on a time scale of hours, which we attribute to independent two-level system defects in the device dielectrics, dispersively coupled to the qubit.

Several areas have been improved with Deep Learning during the past years. For non-safety related products adoption of AI and ML is not an issue, whereas in safety critical applications, robustness of such approaches is still an issue. A common challenge for Deep Neural Networks (DNN) occur when exposed to out-of-distribution samples that are previously unseen, where DNNs can yield high confidence predictions despite no prior knowledge of the input. In this paper we analyse two supervisors on two well-known DNNs with varied setups of training and find that the outlier detection performance improves with the quality of the training procedure. We analyse the performance of the supervisor after each epoch during the training cycle, to investigate supervisor performance as the accuracy converges. Understanding the relationship between training results and supervisor performance is valuable to improve robustness of the model and indicates where more work has to be done to create generalized models for safety critical applications., Comment: 8 pages, 7 figures, presented at SEAA 2019

State-of-the-art topological devices require the use topological surface states to drive electronic transport. In this study, we examine a tunable topological system, $Ge(Bi_{x}Sb_{1-x})_{2}Te_{4}$, for a range of 'x' values from 0 to 1, using a combination of Fourier Transform Scanning Tunneling Spectroscopy (FT-STS) and Angle-Resolved Photoemission Spectroscopy (ARPES). Our results show that the Dirac point shifts linearly with 'x', crossing the Fermi energy near x = 0.7. This novel observation of a smoothly tunable, isolated Dirac point crossing through the topological transport regime and having strong linear dependence with substitution can be critical for future topological spintronics applications., Comment: 18 Pages, 9 Figures, including Appendix

We apply an intense infrared laser pulse in order to perturb the electronic and vibrational states in the three-dimensional charge density wave material 1$T$-VSe$_2$. Ultrafast snapshots of the light-induced hot carrier dynamics and non-equilibrium quasiparticle spectral function are collected using time- and angle-resolved photoemission spectroscopy. The hot carrier temperature and time-dependent electronic self-energy are extracted from the time-dependent spectral function, revealing that incoherent electron-phonon interactions heat the lattice above the charge density wave critical temperature on a timescale of $(200 \pm 40)$~fs. Density functional perturbation theory calculations establish that the presence of hot carriers alters the overall phonon dispersion and quenches efficient low-energy acoustic phonon scattering channels, which results in a new quasi-equilibrium state that is experimentally observed., Comment: 24 pages including supplemental material, 4 figures in the main text and 4 figures in the supplemental material

Diamond is an excellent band insulator. However, boron (B) doping is known to induce superconductivity. We present two interesting effects in superconducting B doped diamond (BDD) thin films: i) Wohlleben effect (paramagnetic Meissner effect, PME) and ii) a low field spin glass like susceptibility anomaly. We have performed electrical and magnetic measurements (under pressure in one sample) at dopings (1.4 , 2.6 and 3.6) X 1021 cm-3, in a temperature range 2 - 10 K. PME, a low field anomaly in inhomogeneous superconductors could arise from flux trapping, flux compression, or for non-trivial reason such as emergent Josephson Pi junctions. Joint occurrence of PME and spin glass type anomalies points to possible emergence of Pi junctions. BDD is a disordered s-wave superconductor; and Pi junctions could be produced by spin flip scattering of spin half moments when present at weak superconducting regions (Bulaevski et al. 1978). A frustrated network of 0 and Pi junctions will result (Kusmartsev et al. 1992) in a distribution of spontaneous equilibrium supercurrents, a phase glass state. Anderson localized spin half spinons embedded in a metallic fluid (two fluid model of Bhatt et al.) could create Pi junction by spin flip scattering. Our findings are consistent with presence of Pi junctions, invoked to explain their (Bhattacharyya et al.) observation of certain resistance anomaly in BDD., Comment: 21 Pages, 7 Figures

To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are to ensure the formation of variable low resistive tunnel ferromagnetic contacts(FC), and to preserve intrinsic properties of the SC during fabrication. Large Schottky barriers lead to the formation of high resistive contacts and methods adopted to control the barriers often alter the intrinsic properties of the SC. This work aims at addressing both issues in fully encapsulated monolayer WSe$_2$ FETs by using bi-layer h-BN as a tunnel barrier at the FC/SC interface. We investigate the electrical transport in monolayer WSe$_2$ FETs with current-in-plane geometry that yields hole mobilities $\sim$ 38.3 $cm^{2}V^{-1}s^{-1}$ at 240 K and On/Off ratios of the order of 10$^7$, limited by the contact regions. We have achieved ultralow effective Schottky barrier ($\sim$ 5.34 meV) with encapsulated tunneling device as opposed to a non-encapsulated device in which the barrier heights are considerably higher. These observations provide an insight into the electrical behavior of the FC/h-BN/SC/h-BN heterostructures and such control over the barrier heights opens up the possibilities for WSe$_2$-based spintronic devices., Comment: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces \{copyright} American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/acsami.0c01025

Electron-electron interactions (EEIs) in 2D van der Waals structures is one of the topics with high current interest in physics. We report the observation of a negative parabolic magnetoresistance (MR) in multilayer 2D semiconductor InSe beyond the low-field weak localization/antilocalization regime, and provide evidence for the EEI origin of this MR behavior. Further, we analyze this negative parabolic MR and other observed quantum transport signatures of EEIs (temperature dependent conductance and Hall coefficient) within the framework of Fermi liquid theory and extract the gate voltage tunable Fermi liquid parameter $F_0^\sigma$ which quantifies the electron spin-exchange interaction strength.

Superconducting materials exhibiting topological properties are emerging as an exciting platform to realize fundamentally new excitations from topological quantum states of matter. In this work, we explore the possibility of a field-free platform for generating Majorana zero energy excitations by depositing magnetic Fe impurities on the surface of candidate topological superconductors, LiFeAs and PbTaSe$_2$. We use scanning tunneling microscopy to probe localized states induced at the Fe adatoms on the atomic scale and at sub-Kelvin temperatures. We find that each Fe adatom generates a striking zero-energy bound state inside the superconducting gap, which do not split in magnetic fields up to 8T, underlining a nontrivial topological origin. Our findings point to magnetic Fe adatoms evaporated on bulk superconductors with topological surface states as a new platform for exploring Majorana zero modes and quantum information science under field-free conditions., Comment: 11 pages, 3 figures

Dirac semimetals (DSMs) are three dimensional analogue to graphene with symmety enforced bulk Dirac nodes. Among various DSMs, ZrSiS has been attracting more interests recently, due to its three dimensional Dirac nodal line protected by the nonsymmorphic symmetry. It actually belongs to a large family of isostructural compounds with unique quantum phenomenon. Here we present a comprehensive study of the first principle calculation, angle-resolved photoemission spectroscopy (ARPES) measurements, and scanning tunneling microscope (STM) experiments on ZrGeTe, a member of the ZrSiS family with stronger spin-orbit coupling (SOC). Our band structure calculation shows the existence of floating gapless surface states at $\bar{X}$ with Rashba splitted helical spin texture, which are confirmed by our ARPES measurements. We also perform quasiparticle scattering interference (QPI) imaging and find several q-vectors, with two Umklapp scattering vectors not observed in other family compounds. All the q-vectors can be identified with joint density of states (JDOS) simulation. Our results demonstrate the interesting electronic structure of ZrGeTe and might benefit the potential application by utilizing its exotic quantum states in the future., Comment: 12 pages, 5 figures

In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by interfacial gap states, severely limits the tunability of junction characteristics, including barrier height and contact resistance. A tunneling contact scheme has been suggested to address the FL pinning issue in metal-2D-semiconductor junctions, whereas the experimental realization is still elusive. Here, we show that an oxidized-monolayer-enabled tunneling barrier can realize a pronounced FL depinning in indium selenide (InSe) transistors, exhibiting a large pinning factor of 0.5 and a highly modulated Schottky barrier height. The FL depinning can be attributed to the suppression of metal- and disorder-induced gap states as a result of the high-quality tunneling contacts. Structural characterizations indicate uniform and atomically thin surface oxidation layer inherent from nature of van der Waals materials and atomically sharp oxide-2D-semiconductor interfaces. Moreover, by effectively lowering the Schottky barrier height, we achieve an electron mobility of 2160 cm$^2$/Vs and a contact barrier of 65 meV in two-terminal InSe transistors. The realization of strong FL depinning in high-mobility InSe transistors with the oxidized monolayer presents a viable strategy to exploit layered semiconductors in contact engineering for advanced electronics and optoelectronics.

Deep Neural Networks (DNN) have improved the quality of several non-safety related products in the past years. However, before DNNs should be deployed to safety-critical applications, their robustness needs to be systematically analyzed. A common challenge for DNNs occurs when input is dissimilar to the training set, which might lead to high confidence predictions despite proper knowledge of the input. Several previous studies have proposed to complement DNNs with a supervisor that detects when inputs are outside the scope of the network. Most of these supervisors, however, are developed and tested for a selected scenario using a specific performance metric. In this work, we emphasize the need to assess and compare the performance of supervisors in a structured way. We present a framework constituted by four datasets organized in six test cases combined with seven evaluation metrics. The test cases provide varying complexity and include data from publicly available sources as well as a novel dataset consisting of images from simulated driving scenarios. The latter we plan to make publicly available. Our framework can be used to support DNN supervisor evaluation, which in turn could be used to motive development, validation, and deployment of DNNs in safety-critical applications., Comment: Preprint of paper accepted for presentation at The First IEEE International Conference on Artificial Intelligence Testing, April 4-9, 2019, San Francisco East Bay, California, USA