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Nocturnal enuresis (NE) is involuntary bedwetting during sleep, typically appearing in young children. Despite the potential benefits of the long-term home monitoring of NE patients for research and treatment enhancement, this area remains underexplored. To address this, we propose NEcare, an in-home monitoring system that utilizes wearable devices and machine learning techniques. NEcare collects sensor data from an electrocardiogram, body impedance (BI), a three-axis accelerometer, and a three-axis gyroscope to examine bladder volume (BV), heart rate (HR), and periodic limb movements in sleep (PLMS). Additionally, it analyzes the collected NE patient data and supports NE moment estimation using heuristic rules and deep learning techniques. To demonstrate the feasibility of in-home monitoring for NE patients using our wearable system, we used our datasets from 30 in-hospital patients and 4 in-home patients. The results show that NEcare captures expected trends associated with NE occurrences, including BV increase, HR increase, and PLMS appearance. In addition, we studied the machine learning-based NE moment estimation, which could help relieve the burdens of NE patients and their families. Finally, we address the limitations and outline future research directions for the development of wearable systems for NE patients

Abstract Aqueous zinc metal batteries (AZMBs) are emerging energy storage systems that are poised to replace conventional lithium‐ion batteries owing to their intrinsic safety, facile manufacturing process, economic benefits, and superior ionic conductivity. However, the issues of inferior anode reversibility and dendritic plating during operation remain challenging for the practical use of AZMBs. Herein, a gel electrolyte based on zwitterionic poly(sulfobetaine methacrylate) (poly(SBMA)) dissolved with different concentrations of ZnSO4 is proposed. Two‐dimensional correlation spectroscopy based on Raman analysis reveals an enhanced interaction priority between the polar groups in SBMA and the dissolved ions as electrolyte concentration increases, which establishes a robust interaction and renders homogeneous ion distribution. Attributable to the modified coordination, zwitterionic gel polymer electrolyte with 5 mol kg−1 of ZnSO4 (ZGPE‐5) facilitates stable zinc deposition and improves anode reversibility. By taking advantage of preferential coordination, a symmetrical cell evaluation employing ZGPE‐5 demonstrates a cycle life over 3600 h, where ZGPE‐5 also exerts a beneficial effect on the full cell cycling when assembled with Zn0.25V2O5 cathode. This study elucidates changes in the internal ion behavior that are dependent on electrolyte concentrations and pave the way for durable AZMBs.

Abstract Double‐sided microfabrication process on an ultra‐thin silicon film has rarely been attempted due to the challenges in terms of the preparation and handling of a thin film in spite of its promising fabrication potentials. Such a process allows for doubling the thin film device density or providing dual functionalities for a thin film depending on whether the front and back sides of a thin film are processed identically or distinctively. Here, a novel double‐sided thin film processing strategy is introduced by realizing a dual coil patterned ultra‐thin silicon film that is working as an actuating or energy harvesting system. Experimentally, a dual coil patterned thin film enabled using the introduced approach shows remarkably enhanced device performance when compared with a single coil patterned counterpart. Furthermore, a multiphysics simulation model is developed and the resultant modeling data validate the experimentally measured performance enhancement. Finally, the structural durability of the thin film upon cyclic loading is tested and its diverse vibration modes are investigated.

A shape memory polymer (SMP) has been intensively researched in terms of its exceptional reversible dry adhesive characteristics and related smart adhesive applications over the last decade. However, its unique adhesive properties have rarely been taken into account for other potential applications, such as robotic pick-and-place, which might otherwise improve robotic manipulation and contribute to the related fields. This work explores the use of an SMP to design an adhesive gripper that picks and places a target solid object employing the reversible dry adhesion of an SMP. The numerical and experimental results reveal that an ideal compositional and topological SMP adhesive design can significantly improve its adhesion strength and reversibility, leading to a strong grip force and a minimal release force. Next, a radially averaged power spectrum density (RAPSD) analysis proves that active heating and cooling with a thermoelectric Peltier module (TEC) substantially enhances the conformal adhesive contact of an SMP. Based on these findings, an adhesive gripper is designed, fabricated, and tested. Remarkably, the SMP adhesive gripper interacts not only with flat and smooth dry surfaces, but also moderately rough and even wet surfaces for pick-and-place, showing high adhesion strength (>2 standard atmospheres) which is comparable to or exceeds those of other single-surface contact grippers, such as vacuum, electromagnetic, electroadhesion, and gecko grippers. Lastly, the versatility and utility of the SMP adhesive gripper are highlighted through diverse pick-and-place demonstrations. Associated studies on physical mechanisms, SMP adhesive mechanics, and thermal conditions are also presented.

Abstract Magnetization reversal in a GaMnAs trilayer system consisting of two GaMnAs layers separated by a Be-doped GaAs spacer was investigated by magnetotransport measurements. The rotation of magnetization in the two GaMnAs layers is observed as two abrupt independent transitions in planar Hall resistance (PHR). Interestingly, one GaMnAs layer manifests a positive change in PHR, while the other layer shows a negative change for the same rotation of magnetization. Such opposite behavior of the two layers indicates that anisotropic magnetoresistance (AMR) has opposite signs in the two GaMnAs layers. Owing to this opposite behavior of AMR, we are able to identify the sequence of magnetic alignments in the two GaMnAs layers during magnetization reversal. The PHR signal can then be decomposed into two independent contributions, which reveal that the magnetic anisotropy of the GaMnAs layer with negative AMR is predominantly cubic, while it is predominantly uniaxial in the layer with positive AMR. This investigation suggests the ability of engineering the sign of AMR in GaMnAs multilayers, thus making it possible to obtain structures with multi-valued PHR, that can be used as multinary magnetic memory devices.

Abstract We discuss the use of planar Hall effect (PHE) in a ferromagnetic GaMnAs film with two in-plane easy axes as a means for achieving novel logic functionalities. We show that the switching of magnetization between the easy axes in a GaMnAs film depends strongly on the magnitude of the current flowing through the film due to thermal effects that modify its magnetic anisotropy. Planar Hall resistance in a GaMnAs film with two in-plane easy axes shows well-defined maxima and minima that can serve as two binary logic states. By choosing appropriate magnitudes of the input current for the GaMnAs Hall device, magnetic logic functions can then be achieved. Specifically, non-volatile logic functionalities such as AND, OR, NAND, and NOR gates can be obtained in such a device by selecting appropriate initial conditions. These results, involving a simple PHE device, hold promise for realizing programmable logic elements in magnetic electronics.

There is a high demand for novel approaches to counter the various challenges of conventional drug susceptibility testing (DST) for tuberculosis, the most prevalent infectious disease with significant global mortality. The QMAC-DST system was recently developed for rapid DST using image technology to track the growth of single cells of Mycobacterium tuberculosis (MTB). The purpose of this study was to clinically validate the QMAC-DST system compared to conventional DST. In total, 178 MTB isolates recovered from clinical specimens in Asan Medical Center in 2016 were tested by both QMAC-DST and absolute concentration methods using Lowenstein-Jensen media (LJ-DST). Among the isolates, 156 were subjected to DST using BACTEC MGIT 960 SIRE kits (BD, Sparks, MD, United States) (MGIT-DST). The susceptibility/resistance results obtained by QMAC-DST were read against 13 drugs after 7 days of incubation and compared with those of LJ-DST. Based on the gold standard LJ-DST, the agreement rates of QMAC-DST for all drugs were 97.8%, 97.9%, and 97.8% among susceptible, resistant, and total isolates, respectively, while the overall agreement of MGIT-DST tested for 156 isolates against first-line drugs was 95.5%. QMAC-DST showed the highest major error of 6.4% for rifampin, however, it could be corrected by a revised threshold of growth since false-resistant isolates showed grew only half than the true-resistant isolates. The rapid and accurate performance of QMAC-DST warrants ideal phenotypic DST for a wide range of first-line and second-line drugs.

We have investigated the magnetic properties of the Ni films deposited on a GaAs and a Bi2Se3 buffer grown by molecular beam epitaxy on a GaAs (001) substrate. The magnetization measurements at 4 K revealed that the coercivity of the Ni films decreases monotonically with increasing thickness up to 25 nm in both cases. However, the coercivity measured at 4 K was always larger in the Ni film deposited on the surface of Bi2Se3 than in the film deposited on the GaAs. Such enhancement of the coercivity decreases with increasing temperature and film thickness. This suggests that the Bi2Se3 surface alters the magnetic properties of the Ni film. The increase of the coercivity was more serious in an un-capped Ni/Bi2Se3 sample, which showed an exchange bias effect due to the oxidation of the top surface of the Ni film. These observations are important for the investigation of spin dependent phenomena in magnetic systems involving a ferromagnet/topological insulator interface.

We report a systemeatic investigation of magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor films by magneto-transport. Hall measurements showed a transition of the easy magnetization direction from in-plane to out-of plane with incorporation of the P into the GaMnAs films. Quantitative information on magnetic anisotropy of the films is obtained by fitting the angular dependence of Hall resistance data to magnetic free energy using the coherent rotation model. Values of magnetic anisotropy parameters show that in-plane anisotropy decreases and out-of-plane anisotropy increases with increasing P content in these films. The out-of-plane magnetic anisotropy in GaMnAsP layers is further enhanced by low temperature annealing. By optimizing the growth and annealing conditions, we were able to obtain a Curie temperature of 125 K in such quaternary films, with strong out-of-plane anisotropy. This study showed that the magnetic anisotropy of the GaMnAsP films can be controlled by adjusting the concentration of the P, and by appropriate post-growth annealing.

Magnetic anisotropy of Fe films grown on (001) GaAs substrates using Ge buffer layers were investigated by planar Hall effect measurements. In addition to phenomena arising from dominant cubic symmetry of the Fe specimen, the study of angular dependence of magnetization reversal revealed breaking of this symmetry in the form of systematic asymmetric shifts of magnetic hysteresis loops around the crystallographic directions. We ascribe such symmetry breaking to an admixture of uniaxial anisotropy associated with the [100] direction in the Fe film. To determine the parameters associated with this uniaxial anisotropy, we quantitatively analyze the asymmetric shifts of the hysteresis loop centers from the directions. Even though the value of these parameters turns out to be relatively small compared to that of the cubic anisotropy (by about two orders of magnitude), they survive up to room temperature.

A striking multiple-step behavior has been observed in magnetoresistance measurements during magnetization reversal in anti-ferromagnetically coupled GaMnAs/GaAs:Be multilayers. This behavior arises from the splitting of the energy degeneracy of spin configurations established by nearest-neighbor interlayer exchange coupling (NN IEC) with contribution from the next-nearest-neighbor (NNN) IEC. This observation reveals that NNN IEC plays a crucial role in the magnetic behavior of these multilayer structures.