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The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of impinging Ga/N flux ratio and growth temperature (750-850{\deg}C).Two different growth regimes were identified: compact and nanocolumnar. A growth diagram was established as a function of growth parameters, exhibiting the transition between growth regimes, and showing under which growth conditions GaN cannot be grown due to thermal decomposition and Ga desorption. Present results indicate that adatoms diffusion length and the actual Ga/N ratio on the growing surface are key factors to achieve nanocolumnar growth., Comment: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in (citation of published article) and may be found at J. Appl. Phys. 106, 126102 (2009) and may be found at https://doi.org/10.1063/1.3267151

We present new CO(2-1) observations of a representative sample of 24 local (z$<$0.02) luminous infrared galaxies (LIRGs) obtained at high spatial resolution ($<$100 pc) from ALMA. We derive the effective radii of the CO(2-1) and the 1.3 mm continuum emissions using the curve-of-growth method. LIRGs show an extremely compact cold molecular gas distribution (median R$_{CO}$ $\sim$0.7 kpc), which is a factor 2 smaller than the ionized gas, and 3.5 times smaller than the stellar size. The molecular size of LIRGs is similar to that of early-type galaxies (R$_{CO}\sim$1 kpc) and about a factor of 6 more compact than local Spirals of similar stellar mass. Only the CO emission in low-z ULIRGs is more compact than these local LIRGs by a factor of 2. Compared to high-z (1$<$z$<$6) systems, the stellar sizes and masses of local LIRGs are similar to those of high-z MS star-forming galaxies (SFG) and about a factor of 2-3 lower than sub-mm galaxies (SMG). The molecular sizes of high-z MS SFGs and SMGs are larger than those derived for LIRGs by a factor of $\sim$3 and $\sim$8, respectively. These results indicate that while low-z LIRGs and high-z MS-SFGs have similar stellar masses and sizes, the regions of current star formation (traced by the ionized gas) and of potential star-formation (traced by the molecular gas) are substantially smaller in LIRGs, and constrained to the central kpc region. High-z galaxies represent a wider population but their star-forming regions are more extended, even covering the overall size of the host galaxy. High-z galaxies have larger fractions of gas than low-z LIRGs, and therefore the formation of stars could be induced by interactions and mergers in extended disks or filaments with large enough molecular gas surface density involving physical mechanisms similar to those identified in the central kpc of LIRGs., Comment: 36 pages, 20 figures, 8 tables. Accepted for publication in A&A

In the nearby (D=14 Mpc) AGN-starburst composite galaxy NGC 1068, it has been found that the molecular gas in the Circum-nuclear Disk (CND) is outflowing, which is a manifestation of ongoing AGN feedback. The outflowing gas has a large spread of velocities, which likely drive different shock chemistry signatures at different locations in the CND. We perform a multi-line molecular study using two shock tracers, SiO and HNCO, with the aim to determine the gas properties traced by these two species, and explore the possibility of reconstructing the shock history in the CND. Five SiO transitions and three HNCO transitions were imaged at high resolution $0''.5-0''.8$ with the Atacama Large Millimeter/submillimeter Array (ALMA). We performed both LTE and non-LTE radiative transfer analysis coupled with Bayesian inference process in order to characterize the gas properties, such as molecular gas density and gas temperature. We found clear evidence of chemical differentiation between SiO and HNCO, with the SiO/HNCO ratio ranging from greater than one on the east of CND to lower than one on the west side. The non-LTE radiative transfer analysis coupled with Bayesian inference confirms that the gas traced by SiO has different densities - and possibly temperatures - than that traced by HNCO. We find that SiO traces gas affected by fast shocks while the gas traced by HNCO is either just affected by slow shocks or not shocked at all. A distinct differentiation between SiO and HNCO has been revealed in our observations and the further analysis of the gas properties traced by both species, which confirms the results from previous chemical modelings., Comment: Accepted for publication in A&A

We analyse the influence of the dynamical environment on the star formation (SF) relations of the dense molecular gas in the starburst (SB) ring of the Seyfert 2 galaxy NGC 1068. We used ALMA to image the emission of the 1-0 transitions of HCN and HCO+ with a resolution of 56 pc. We also used ancillary data of CO(1-0) at a resolution of ~100 pc, and CO(3-2) and its underlying continuum emission at ~40 pc. These observations allow us to probe a range of molecular gas densities (n(H2)~10$^{3-5}cm^{-3}$). The SF rate (SFR) is derived from Pa$\alpha$ line emission imaged by HST/NICMOS. We analysed how SF relations change depending on the choice of aperture sizes and molecular gas tracer. The scatter in the Kennicutt-Schmidt relation is about a factor of two to three lower for the HCN and HCO+ lines compared to CO(1-0) for a common aperture. Correlations lose statistical significance below a critical spatial scale $\approx$300-400 pc. The SF efficiency of the dense molecular gas (SFEdense) shows a scattered distribution as a function of the HCN luminosity (L'(HCN)) around a mean value of $\simeq0.01$Myr$^{-1}$. An alternative prescription for SF relations, linking the SFEdense and the boundedness of the gas measured by the parameter b$\equiv\Sigma$dense/$\sigma^2$, where $\Sigma$dense is the dense molecular gas surface density and $\sigma$ the velocity dispersion, resolves the degeneracy associated with the SFEdense-L'(HCN) plot. We identify two branches in the SFEdense-b plot that correspond to two dynamical environments in the SB ring, which are defined by their proximity to the bar-ring interface region. This region corresponds to the crossing of two density wave resonances, where an increased rate of cloud-cloud collisions would favour an enhanced compression of molecular gas. Our results suggest that galactic dynamics plays a major role in the efficiency of the gas conversion into stars., Comment: 30 pages, 34 figures, 4 tables. Accepted for publication in Astronomy & Astrophysics

We analyse the star formation (SF) relations in a sample of 16 nearby luminous infrared galaxies (LIRGs) with more than 2800 regions defined on scales of 90 to 500 pc. We used ALMA to map the distribution of the cold molecular gas traced by the J = 2-1 line of CO and archival Pa\alpha HST/NICMOS imaging to trace the recent SF. In four objects, we find two different branches in the Kennicutt-Schmidt relation at 90 pc scales, suggesting the existence of a duality in this relation. The two branches correspond to two different dynamical environments within each galaxy. One branch, which corresponds to the central region of these galaxies 90% of the regions are located at radii < 0.85 kpc), shows higher gas and star formation rate surface densities with higher velocity dispersion. The other branch, which shows lower molecular gas and SF rate surface densities, corresponds to the more external disk regions (r $\sim$ 1 kpc). Despite the scatter, the SF efficiency of the galaxies with a dual behaviour increases with increasing boundedness as measured by the b parameter (b $\equiv$ $\Sigma_{H_{2}}$/$\sigma^{2}$ $\propto$ $\alpha_{vir}^{-1}$). At larger spatial scales (250 and 500 pc), the duality disappears. The rest of the sample does not show evidence of this dual behaviour at any scale., Comment: Accepted for publication in A&A, 28 pages, 10 figures, 5 tables

This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet elimination by radical-beam irradiation was successfully applied to grow high quality InGaN films on Si substrates for the first time. Among several buffer choices, an AlN buffer layer with a thickness above 24 nm improves the structural and optical quality of the InGaN epilayer while keeping a top to bottom ohmic behavior. These results will allow fabricating double-junction InGaN/Si solar cells without the need of tunnel junctions between the two sub-cells, therefore simplifying the device design.

We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different approaches and find that the best results are obtained using a refined preparation method based on the conventional procedure for plan-view TEM of thin films, specifically modified for the NW morphology. The fundamental aspects of such a preparation are the initial mechanical stabilization of the NWs and the minimization of the ion-milling process after dimpling the samples until perforation. The combined analysis by plan-view and cross-sectional TEM of the NWs allows determination of the degree of strain relaxation and reveals the formation of an unintentional shell layer (2-3 nm thick) around the InN NWs. The shell layer is composed of bcc-In2O3 nanocrystals with a preferred orientation with respect to the wurtzite InN: In2O3 [111] || InN [0001] and In2O3 <110> || InN <11-20>.