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In this work, the performance of SensL MicroFC-60035 SiPM devices was studied during a 1460-day mission in Low Earth Orbit (LEO) using the LabOSat-01 characterization payload. Two of these platforms, carrying two SiPMs each, were integrated into the \~NuSat-7 satellite (COSPAR-ID: 2020-003B). Analysis revealed that these SiPMs experienced an increase in dark current over time due to damage from trapped and solar proton radiation. The total ionizing dose received by the payload and the SiPMs was measured using p-MOSFET dosimeters, with a resulting value of 5 Gy, or a 1 MeV neutron equivalent fluence of $\phi_n = 5 \cdot 10^9$ n/cm$^2$. The dark current was observed to increase up to 500 times. Parameters such as Gain and Photon Detection Efficiency remained unchanged throughout the mission. These findings align with previous performance reports involving different SiPMs irradiated with various particles and energies.

Originally studied for their suitability to store information compactly, memristive networks are now being analysed as implementations of neuromorphic circuits. An extremely high number of elements is thus mandatory. To surpass the limited achievable connectivity - due to the featuring size - exploiting self-assemblies has been proposed as an alternative, in turn posing more challenges. In an attempt for offering insight on what to expect when characterizing the collective electrical response of switching assemblies, in this work, networks of memristive elements are simulated. Collective electrical behaviour and maps of resistance states are characterized upon different electrical stimuli. By comparing the response of homogeneous and heterogeneous networks, we delineate differences that might be experimentally observed when the number of memristive units is scaled up and disorder arises as an inevitable feature., Comment: Supplementary information comprises animated sequences of resistive maps corresponding to the internal state of each unit within the array both for the cycling experiment (Fig. 2 of the main text) and the sensitization one (Fig. 3 of the main) and is available upon request

We present the results after 2.5 years in or-bit of Total Ionizing Dose (TID) measurements done using Metal Oxide Semiconductor (MOS) dosimeters on the MeMOSat board. The MeMOSat board was launched on July 19th 2014 at the BugSat-1 "Tita" microsatellite developed by Satellogic to stay at LEO. We used as dosimeters p-channel Commercial Off The Shelf (COTS) MOS transistors with gate oxides of 250~nm. Before launch, a subset of transistors with similar drain current to voltage (I-V)curves where selected from a group of 100 devices. The temperature dependence of the (I-V) curves was studied to find the minimum temperature coefficient biasing point. Then, a calibration subgroup of sensors was irradiated using a $^{60}$Co gamma source to study their response to TID, showing responsivities of $\sim$75~mV/krad when the sensors are irradiated without gate bias. Also, the post irradiation response of the sensors was monitored, in order to include a correction for low dose rate irradiations, yielding 30~mV/krad. A biasing and reading circuit was developed in order to allow the reading of up to 4 sensors.The threshold voltage was monitored during different periods of the mission. After 2.5 years in orbit,the threshold voltage of the sensor mounted on the MeMOSat Board had a V$_\mathrm{T}$ shift of approximately 35~mV corresponds to a dose of 1.2~krads.