Search

The fabrication of n-channel polycrystalline silicon thin-film transistors (poly-Si TFTs) at a low temperature is discussed. The numerical analysis of defect reduction is presented.

Research describing the melt regrowth properties of silicon films is presented. The relationship between silicon melt duration and the intensity of joule heating is also investigated.

A study was conducted to examine the therapeutic application of the Lactobacillus acidophilus group lactic acid bacteria in meat fermentation. Acid and bile-tolerance were evaluated to determine the resistance of L. gasseri under conditions similar with human stomach and intestines. Results indicated that probiotic lactic acid bacteria could be used for meat fermentation to realize healthy meat products.

Astudy of the variation in the optical and electrical properties of laser-crystallized and -amorphized silicon films by plasma hydrogenation reveals that the films have an optical band gap at 1.7 electron volts and a hydrogenation concentration of 1.5 atomic weight percent. The defect density in these films can be reduced by the process of hydrogenation for 30 seconds at 250 degrees Celsius. The hydrogenation concentration is independent of the defect density in silicon films.

Irradiation with a 30 nanoseconds XeCl excimer laser aids in analyzing laser-incited melting mechanism which is followed by solidification of silicon films produced on a quartz substrate. The amorphization of silicon films on a substrate is not dependent on the rate of cooling. The temperature gradient in liquid silicon influences the quick and uniform solidification of silicon films.

Electrical and structural properties of polycrystalline silicon germanium (poly-SiGe) films fabricated by pulsed-laser annealing were investigated. Observation of laser-induced melt-regrowth of SiGe films using transient conductance measurement revealed that the melt depth and the crystallization velocity increased as Ge concentration increased. The increase of the crystallization velocity resulted in increase of the average size of crystalline grains from 66 to 120 nm at the laser energy density of 360 mJ/cm2 with increasing Ge concentration from 0 to 60%. The crystalline volume ratio obtained by reflectivity spectra in the ultraviolet region also increased from 0.83 to 1.0. Numerical analysis revealed that the density of electrically active defects decreased from 3.5×1018 to 1.1×1018 cm-3 as Ge concentration increased from 0 to 80%. The density of defect states of Si0.8Ge0.2 films were reduced from 3.5×1018 to 1.9×1018 cm-3 by 13.56-MHz hydrogen plasma treatment at 250 °C, 30 W, and 130 Pa for 30 s. However, the plasma treatment did not reduce the defect density for Si0.4Ge0.6 and Si0.2Ge0.8 films. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Investigates carrier transport properties for polycrystalline silicon films fabricated at 300 degrees Celsius by plasma enhanced chemical vapor deposition from gaseous mixture of SiF[sub 4] and hydrogen. Analysis of free carrier light absorption.

Presents a study that investigated pulsed laser-induced amorphization of silicon films. Investigation of laser-induced amorphization; Hydrogenation of laser-amorphized film; Fabrication of thin-film transistors.