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The temperature dependence of the electrical leakage current density of chemical solution deposited BaTiO3 films on high purity Ni foils was investigated as function of the underlying Ni microstructure. Depending on the Ni heat treatment prior to BaTiO3 deposition, it was found that pores in the dielectric followed the profiles of the underlying Ni grain boundary grooves. The electrical properties were then characterized on capacitors with and without the presence of Ni grain boundaries. When a Ni grain boundary from the substrate was present in the capacitor used during the electrical measurements, the loss tangent of the capacitor rose rapidly for dc biases exceeding ∼25 kV/cm. The critical bias increases to ∼100 kV/cm when no substrate grain boundaries are included in the capacitor. In addition, the capacitance-voltage curves are much more symmetric when grain boundaries are absent. This disparity in the electrical behavior was analyzed in terms of the mechanisms of charge conduction across the Ni-dielectric interface. While a reverse biased Schottky emission mechanism dominates the current in areas free of Ni grain boundaries, the barrier at the cathode is ineffective when Ni grain boundaries are present in the substrate. This, in turn, leads to a larger leakage current dominated by the forward biased Schottky barrier at the anode. The results are important to both embedded and surface mount capacitors. [ABSTRACT FROM AUTHOR]

Over the past decade, multilayer ceramic capacitors ( MLCCs) have been able to achieve very high volumetric capacitance due to continuous improvement in their process technology. However, the performance of these devices is severely limited by the presence of electrode defects such as electrode porosity and roughness. To assess the effect of microstructure on MLCC performance, two sets of multilayer capacitors subjected to different processing conditions are compared for their microstructure and electrical properties. It is shown that more continuous and planar electrode morphology leads to lower local electric fields and thus, superior performance. These computational predictions are verified using electrical property measurements. Capacitors with higher electrode continuity exhibit proportionally higher capacitance, provided the grain-size distributions are similar. From the leakage current measurements, it is found that the Schottky barrier at the electrode-dielectric interface controls the conduction mechanism. This barrier height is adversely affected by the microstructural defects such as electrode discontinuities and roughness. These results are further supported by frequency-dependent impedance measurements. [ABSTRACT FROM AUTHOR]