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The mid-infrared region is crucial for elucidating the unique biochemical signatures of microorganisms. The MIR resonant structures turned out to facilitate exceptional performance owing to the enhance electric field confinement in the nano-sized aperture. However, the extension of such technique in bacteria-sensing remains limited, primarily due to its micrometre size. This work is the first demonstration of a MIR resonant structure, the gold-coated micro-structured inverted pyramid array of silicon exhibiting light-trapping capabilities, for the bacteria detection in entire MIR range. The electric-field localization within the micro-sized cavity of inverted pyramid amplifies the light-matter interaction by harnessing surface plasmon polaritons, leading to improved detection sensitivity. The confinement of electric field is further corroborated by electric-field simulations based on finite element method. In particular, we observed notable enhancement in both the quantitative and qualitative detection of Escherichia coli and Staphylococcus aureus for the bacteria cell with very low concentration, reflecting the efficacy of our detection method. Furthermore, the cost-effective micro structured silicon is fabricated using metal-assisted chemical etching method with the lithography-free method, along with the capabilities of wafer-scale fabrication. Moreover, our device configuration even demonstrates the characteristics of reusability and reproducibility offers substantial benefits over conventional detection schemes. Consequently, this CMOS technology-compatible biosensor signifies promising ways for the integration of this technology with forthcoming bio-applications.

Spin filtering is a fundamental operation in spintronics, enabling the generation and detection of spin-polarized carriers. Here, we proposed and theoretically demonstrated that a 3d transition metal (TM) doped silicon quantum dot (SiQD) is a suitable candidate for spin filter device at room temperature. Using density functional theory (DFT), we investigate the structure, electronic properties, and magnetic behavior of TM-SiQD. Our calculations demonstrate that Mn-doped SiQD exhibits the highest stability. The designed spin-filter device using Mn-doped SiQD shows a spin-filtering efficiency of 99.9% at 300K electrode temperature along with very high conductance. This remarkable efficiency positions it as a promising candidate for room-temperature spintronic devices.

The manuscript theoretically discusses various important aspects for donor atom based single qubit operations in silicon (Si) quantum computer architecture at room temperature using a single nitrogen (N) deep-donor close to the Si/SiO2 interface. Quantitative investigation of room temperature single electron shuttling between a single N-donor atom and the interface is the focus of attention under the influence of externally applied electric and magnetic field. To apprehend the realistic experimental configurations, central cell correction along with effective mass approach is adopted throughout the study. Furthermore, a detailed discussion currently explores the significant time scales implicated in the process and their suitability for experimental purposes. Theoretical estimates are also provided for all the external fields required to successfully achieve coherent single electron shuttling and their stable maintenance at the interface as required. The results presented in this work offer practical guidance for quantum electron control using N-donor atoms in Si at room temperature.

Single electron transistor (SET) is an advanced tool to exploit in quantum devices. Working of such devices at room-temperature is essential for practical utilization. Dopant based single-electron devices are well studied at low-temperature although a few devices are developed for high-temperature operation with certain limitations. Here, we propose and theoretically exhibit that nitrogen (N) donor in silicon is an important candidate for effective designing of such devices. Theoretical calculation of density-of-states using semi-empirical DFT method indicates that N-donor in silicon has deep ground state compared to a phosphorus (P) donor. N-donor spectrum is explored in nano-silicon along with the P-donor. Comparative data of Bohr radius of N-donor and P-donor is also reported. The simulated current-voltage characteristics confirm that N-doped device is better suited for SET operation at room-temperature.

A new method of introducing nanopores with spongy morphology during fabrication of size and pitch controlled flexible silicon microwires (SiMWs) in wafer scale is presented using nanosphere lithography technique in addition to metal catalyzed electroless etching technique by varying concentration of oxidant and introducing surfactant or co-solvents to the etching solution. For achieving self-assembled monolayer closed-pack pattern of SiO2 microparticles in wafer-scale simple spin coating process was used. The effect of variation of the etchant, oxidant and surfactant on the morphology and optical properties of SiMWs were studied. By simply controlling the diameter of SiO2 microparticles and concentration of H2O2 the size of the MWs as well as the introduction of pores could be controlled in wafer-scale. Average reflectance suppressed to below 8% in the broad spectral range of 400-800 nm for these porous, spongy and flexible SiMW arrays in wafer scale. The mechanism behind this formation of spongy, porous and flexible nature of the SiMWs is also demonstrated for a better understanding of the etching process., Comment: 22 pages 10 Figures

We report finite-bias characteristics of electrical transport through phosphorus donors in silicon nanoscale transistors, in which we observe inelastic-cotunneling current in the Coulomb blockade region. The cotunneling current appears like a resonant-tunneling current peak emerging from the excited state at the crossover between blockade and non-blockade regions. These cotunneling features are unique, since the inelastic-cotunneling currents have so far been reported either as a broader hump or as a continuous increment of current. This finding is ascribed purely due to excitation-related inelastic cotunneling involving the ground and excited states. Theoretical calculations were performed for a two-level quantum dot, supporting our experimental observation.

Vertically aligned silicon micro/nanowire arrays of different sizes have been synthesized by combining the modified metal-assisted chemical etching (MACE) and reactive ion etching (RIE) methods. This is a novel lithography-free method to fabricate silicon micro/nanowire arrays. The size of micro/nanowire arrays is controlled by controlling the etching rate and diameter of silica particles. The silicon micro/nanowire geometry can utilize for efficient collection of photo-generated charge carriers from impure silicon wafers, which have a short minority carrier diffusion length also act as a self-antireflection coating layer. For micro/nanowire having average diameters of 40 nm, 330 nm and 950 nm and their corresponding average length 1.12 micron, 1.1 micron, and 1 micron, respectively, the observed average reflectance was 0.22, 0.6 and 0.33 percent at 45-degree incident angle, while the average reflectance was increased up to 4.2, 9.2, and 11 percent, respectively at 75-degree incident angle in the broad range of 300 - 1200 nm of the solar spectrum. The measured average reflectance for these samples is quite low compared to the planar silicon wafer. Thus this geometry is a promising candidate for fabricating low-cost and highly efficient radial junction silicon micro/nanowire arrays based solar cells.

Silicon inverted pyramids arrays have been suggested as one of the most promising structure for high-efficient ultrathin solar cells due to their ability of superior light absorption and low enhancement of surface area. However, the existing techniques for such fabrication are either expensive or not able to create appropriate structure. Here, we present a lithography free method for the fabrication of inverted pyramid arrays by using a modified metal assisted chemical etching (MACE) method. The size and inter-inverted pyramids spacing can also be controlled through this method. We used an isotropic chemical etching technique for this process to control the angle of etching, which leads to ultra-low reflection, even < 0.5%, of this nanostructure. Using this specification, we have predicted the expected solar cell parameters, which exceeds the Lambertian limit. This report provides a new pathway to improve the efficiency of the ultrathin silicon solar cells at lower cost.