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45 results on '"Salvestrini, J.-P."'

1. Combined effects due to phase, intensity and contrast in electrooptic modulation. Application to ferroelectric materials

Author

Guilbert, L., Salvestrini, J. P., Hassan, H., and Fontana, M. D.

Subjects
Physics - Optics
Abstract

The combination of phase, intensity, and contrast effects during electrooptic modulation is theoretically and exper- imentally investigated. One consequence of this combination is the modification of the amplitude of the single-frequency signals which are commonly used as working points for electrooptic mod- ulators and for the measurements of the electrooptic coefficients. Another consequence of direct intensity modulation is to shift the double-frequency points of the transfer function from the positions they normally occupy at the intensity extrema. They can even make them disappear if the direct intensity modulation is stronger than the phase modulation. Such phenomena are expected with any ferroelectric material in which a significant part of the incident light is deflected or scattered by domain walls or grain boundaries. They can lead to considerable mistakes in the determination of the electrooptic coefficients. Appropriate procedures to extract the different contributions are explained. Experimental results in rubidium hydrogen selenate are given, and consequences of the working of electrooptic modulators are discussed.

Published
2008
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2. Photoinduced doping in hexagonal boron nitride

Author

Perepeliuc, A., primary, Gujrati, R., additional, Srivastava, A., additional, Vuong, P., additional, Ottapilakkal, V., additional, Voss, P. L., additional, Sundaram, S., additional, Salvestrini, J. P., additional, and Ougazzaden, A., additional

Published
2023
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5. Effect of thermally generated nanopits diameter on the carrier dynamics in AlGaN/GaN heterostructures

Author

Bouzidi, M., primary, Malek, W., additional, Chaaben, N., additional, Alshammari, Abdullah S., additional, Khan, Z. R., additional, Gandouzi, M., additional, Mohamed, M., additional, Rebey, A., additional, Alatawi, Abdullah A., additional, Alhassan, Abdullah I., additional, Alharbi, Abdullah, additional, Salvestrini, J. P., additional, and Shakfa, M. K., additional

Published
2022
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11. Single crystalline boron rich B(Al)N alloys grown by MOVPE

Author

Vuong, P., primary, Mballo, A., additional, Sundaram, S., additional, Patriarche, G., additional, Halfaya, Y., additional, Karrakchou, S., additional, Srivastava, A., additional, Krishnan, K., additional, Sama, N. Y., additional, Ayari, T., additional, Gautier, S., additional, Voss, P. L., additional, Salvestrini, J. P., additional, and Ougazzaden, A., additional

Published
2020
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12. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template.

Author

Sundaram, S., Puybaret, R., El Gmili, Y., Li, X., Bonanno, P. L., Pantzas, K., Orsal, G., Troadec, D., Cai, Z.-H., Patriarche, G., Voss, P. L., Salvestrini, J. P., and Ougazzaden, A.

Subjects
NANOSTRUCTURED materials, SAPPHIRES, NANOCHEMISTRY, SINGLE crystals, POLARIZATION (Electricity)
Abstract

Uniform, dense, single-phase, 150 nm thick indium gallium nitride (InGaN) nanostructure (nanorods and nanostripes) arrays have been obtained on gallium nitride templates, by metal organic chemical vapor deposition and nanoscale selective area growth on silicon dioxide patterned masks. The 150 nm thick InGaN nanorods have a perfect hexagonal pyramid shape with relatively homogenous indium concentration up to 22%, which is almost twice as high as in planar InGaN grown in the same condition, and luminesce at 535 nm. InGaN nanostripes feature c-axis oriented InGaN in the core which is covered by InGaN grown along semi-polar facets with higher In content. Transmission electron microscope and sub micron beam X-rays diffraction investigations confirm that both InGaN nanostructures are mostly defect free and monocrystalline. The ability to grow defect-free thick InGaN nanostructures with reduced polarization and high indium incorporation offers a solution to develop high efficiency InGaN-based solar cells. [ABSTRACT FROM AUTHOR]

Published
2014
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14. Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

Author

El Gmili, Y., primary, Bonanno, P. L., additional, Sundaram, S., additional, Li, X., additional, Puybaret, R., additional, Patriarche, G., additional, Pradalier, C., additional, Decobert, J., additional, Voss, P. L., additional, Salvestrini, J-P., additional, and Ougazzaden, A., additional

Published
2017
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18. Cristaux laser non linéaires de borates

Author

Aka, G., Segonds, Patricia, Boulanger, Benoit, Ménaert, Bertrand, Zaccaro, Julien, Salvestrini, J. P., Fontana, M. D., Moncorge, R., Poree, F., Gadret, Grégory, Mangin, J., Brenier, A., Boulon, G., Pelenc, D., Laboratoire de Chimie Appliquée de l'État Solide ( LCAES ), Ecole Nationale Supérieure de Chimie de Paris- Chimie ParisTech-PSL ( ENSCP ) -Centre National de la Recherche Scientifique ( CNRS ), OPTIMA - Optique et Matériaux, Institut Néel ( NEEL ), Université Grenoble Alpes [Saint Martin d'Hères]-Centre National de la Recherche Scientifique ( CNRS ) -Université Grenoble Alpes [Saint Martin d'Hères]-Centre National de la Recherche Scientifique ( CNRS ), CrisMass - Cristaux Massifs, Laboratoire Matériaux Optiques, Photonique et Systèmes ( LMOPS ), CentraleSupélec-Université de Lorraine ( UL ), Centre de recherche sur les Ions, les MAtériaux et la Photonique ( CIMAP - UMR 6252 ), Université de Caen Normandie ( UNICAEN ), Normandie Université ( NU ) -Normandie Université ( NU ) -Ecole Nationale Supérieure d'Ingénieurs de Caen ( ENSICAEN ), Normandie Université ( NU ) -Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ) -Centre National de la Recherche Scientifique ( CNRS ), Laboratoire Interdisciplinaire Carnot de Bourgogne ( LICB ), Université de Bourgogne ( UB ) -Centre National de la Recherche Scientifique ( CNRS ), Laboratoire de Physico-Chimie des Matériaux Luminescents ( LPCML ), Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ), Laboratoire d'Electronique et des Technologies de l'Information ( CEA-LETI ), Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ) -Université Grenoble Alpes [Saint Martin d'Hères], Klein, Sandra, Laboratoire de Chimie Appliquée de l'État Solide (LCAES), Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS), Optique et Matériaux (NEEL - OPTIMA), Institut Néel (NEEL), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS), Cristaux massifs (NEEL - CrisMass), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Interdisciplinaire Carnot de Bourgogne (ICB), Université de Bourgogne (UB)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physico-Chimie des Matériaux Luminescents (LPCML), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Optique et Matériaux (OPTIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), Cristaux Massifs (CrisMass), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Interdisciplinaire Carnot de Bourgogne (LICB), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-Université de Lyon

Subjects
[PHYS]Physics [physics], [PHYS] Physics [physics]
Published
2007

19. The electro-optic r(22) coefficients and acoustic contributions in LiTaO3 crystal

Author

Saadon, H. L. Theofanous, N. Aillerie, M. Abarkan, M. and Salvestrini, J. P. Fontana, M. D.

Abstract

The electro-optic (EO) coefficients r(22) of a congruent LiTaO3 bulk crystal, with dimensions of 6 x 5 x 20 mm(3), have been measured over a wide frequency range (from dc up to 150 MHz) using the novel and elaborate step-voltage time-response method (TRM). At low frequencies, these results are compared with those obtained with the frequency-doubling EO-modulation (FDEOM) method. From these measurements, the clamped and unclamped EO coefficients, r(22)(S) and r(22)(T), respectively, have been derived and the acoustic contribution r(22)(a) to the EO effect has been deduced and compared with theoretically calculated values. Also, using the values of acoustic contribution, r(a), the true value of the EO coefficient r(22) has been extracted. Lastly, the above results are compared with those obtained for a pure congruent LiNbO3 crystal in the framework of a typical intensity-modulation (IM) EO system.

Published
2006

20. AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm

Author

Li, X., primary, Sundaram, S., additional, Disseix, P., additional, Le Gac, G., additional, Bouchoule, S., additional, Patriarche, G., additional, Réveret, F., additional, Leymarie, J., additional, El Gmili, Y., additional, Moudakir, T., additional, Genty, F., additional, Salvestrini, J-P., additional, Dupuis, R. D., additional, Voss, P. L., additional, and Ougazzaden, A., additional

Published
2015
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23. Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

Author

Abid, M., primary, Moudakir, T., additional, Orsal, G., additional, Gautier, S., additional, En Naciri, A., additional, Djebbour, Z., additional, Ryou, J.-H., additional, Patriarche, G., additional, Largeau, L., additional, Kim, H. J., additional, Lochner, Z., additional, Pantzas, K., additional, Alamarguy, D., additional, Jomard, F., additional, Dupuis, R. D., additional, Salvestrini, J.-P., additional, Voss, P. L., additional, and Ougazzaden, A., additional

Published
2012
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30. Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors.

Author

Bishop, C., Salvestrini, J. P., Halfaya, Y., Sundaram, S., Gmili, Y. El, Pradere, L., Marteau, J. Y., Assouar, M. B., Voss, P. L., and Ougazzaden, A.

Subjects
*NITRIC oxide, *GALLIUM nitride, *SCHOTTKY barrier diodes, *METAL oxide semiconductor field-effect transistors, *SUPERLATTICES, *MODULATION-doped field-effect transistors
Abstract

We report a double Schottky junction gas sensor based on a BGaN/GaN superlattice and Pt contacts. NO2 is detected at concentrations from 4.5 to 450 ppm with current responsivity of 6.7 mA/(cm²×ppm) at 250℃ with a response time of 5 s. The sensor is also selective against NH3 at least for concentrations less than 15 ppm. The BGaN layer at the surface increases surface trap density and trap depth, which improves responsivity and high temperature stability while the GaN layer improves the magnitude of the diode current. The BGaN layer's columnar growth structure also causes a Pt morphology that improves O2- diffusion. [ABSTRACT FROM AUTHOR]

Published
2015
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40. Frequency and wavelength dependencies of the electro-optic coefficients in SBN:60 single crystal.

Author

Abarkan, M., Salvestrini, J. P., Fontana, M. D., and Cuniot-Ponsard, M.

Subjects
*DISPERSION (Chemistry), *OPTICS, *LASERS, *LIGHT sources, *OPTICAL parametric oscillators
Abstract

We report the dependence of the high and low-frequency values of the linear electro-optic (EO) coefficient rc=r33-(no/ne)3r13 of Sr0.6Ba0.4Nb2O6 (SBN:60) single crystal on the laser wavelength. The EO response has been carried out from dc to 150 MHz for four wavelengths ranging from 465 to 1321 nm. The clamped rS and unclamped rT coefficients have been determined and their dispersions as a function of wavelength have been established and discussed. [ABSTRACT FROM AUTHOR]

Published
2008
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41. Investigations of LiNbO3 and LiTaO3 Single Crystals for Pyroelectric Applications in the Wide Temperature Range.

Author

Bravina, S. L., Morozovsky, N. V., Morozovska, A. N., Gille, S., Salvestrini, J.-P., and Fontana, M. D.

Subjects
PYROELECTRIC detectors, PYROELECTRICITY, CRYSTALS, LITHIUM niobate, LITHIUM tantalate
Abstract

We present temperature dependences of pyroelectric response in LiNbO3 and LiTaO3 single crystals in operating condition as pyroelectric detectors and in the range 4,2-400 K. In the range 200-400 K, the pyroelectric response is nearly constant. At low-temperature (40-80 K) the pyroelectric response is shown to be the largest. In the range 4,5-12 K, the sign of the pyroelectric coefficient is found to change. This could be used for temperature stabilization devices. [ABSTRACT FROM AUTHOR]

Published
2007
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42. The electro-optic r22coefficients and acoustic contributions in LiTaO3crystal

Author

Saadon, H L, Théofanous, N, Aillerie, M, Abarkan, M, Salvestrini, J P, and Fontana, M D

Abstract

The electro-optic (EO) coefficients r22of a congruent LiTaO3bulk crystal, with dimensions of 6 × 5 × 20 mm3, have been measured over a wide frequency range (from dc up to 150 MHz) using the novel and elaborate step-voltage time-response method (TRM). At low frequencies, these results are compared with those obtained with the frequency-doubling EO-modulation (FDEOM) method. From these measurements, the clamped and unclamped EO coefficients, r22Sand r22T, respectively, have been derived and the acoustic contribution r22ato the EO effect has been deduced and compared with theoretically calculated values. Also, using the values of acoustic contribution, ra, the true value of the EO coefficient r22has been extracted. Lastly, the above results are compared with those obtained for a pure congruent LiNbO3crystal in the framework of a typical intensity-modulation (IM) EO system.

Published
2006
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44. AlGaN-based MQWs emitting at 280nm for vertical cavity surface emitting lasers

Author

Le Gac, G., Li, X., Sundaram, S., El Gmili, Y., Moudakir, T., Disseix, P., Réveret, F., Lagarde, D., Leymarie, J., Bouchoule, S., Patriarche, G., Frederic Genty, Salvestrini, J. -P, Dupuis, R. D., Voss, P. L., Ougazzaden, A., Institut Pascal (IP), Centre National de la Recherche Scientifique (CNRS)-Université Clermont Auvergne (UCA)-Institut national polytechnique Clermont Auvergne (INP Clermont Auvergne), Université Clermont Auvergne (UCA)-Université Clermont Auvergne (UCA), Georgia Institute of Technology [Lorraine, France], Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Optoélectronique Quantique (LPCNO), Laboratoire de physique et chimie des nano-objets (LPCNO), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Center for Compound Semiconductors and School of Electrical and Computer Engineering, ANR-11-BS03-0012,VESUVE,LASER A CAVITE VERTICALE EMETTANT PAR LA SURFACE DANS LA GAMME DE L'ULTRA-VIOLET(2011), Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-SIGMA Clermont (SIGMA Clermont)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des sciences et matériaux pour l'électronique et d'automatique (LASMEA), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-Centre National de la Recherche Scientifique (CNRS), Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), and Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Abstract

International audience; There is currently much research in deep ultraviolet ((DUV: λ

45. Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE.

Author

Laifi, J., Chaaben, N., Bouazizi, H., Fourati, N., Zerrouki, C., Gmili, Y. El, Bchetnia, A., Salvestrini, J. P., and El Jani, B.

Subjects
*GALLIUM arsenide, *GALLIUM nitride, *METAL organic chemical vapor deposition, *CATHODOLUMINESCENCE, *REFLECTANCE
Abstract

We have investigated the kinetic growth of low temperature GaN nucleation layers (LT-GaN) grown on GaAs substrates with different crystalline orientations. GaN nucleation layers were grown by metal organic vapor phase epitaxy (MOVPE) in a temperature range of 500-600 °C on oriented (001), (113), (112) and (111) GaAs substrates. The growth was in-situ monitored by laser reflectometry (LR). Using an optical model, including time-dependent surface roughness and growth rate profiles, simulations were performed to best approach the experimental reflectivity curves. Results are discussed and correlated with ex-situ analyses, such as atomic force microscopy (AFM) and UV-visible reflectance (SR). We show that the GaN nucleation layers growth results the formation of GaN islands whose density and size vary greatly with both growth temperature and substrate orientation. Arrhenius plots of the growth rate for each substrate give values of activation energy varying from 0.20 eV for the (001) orientation to 0.35 eV for the (113) orientation. Using cathodoluminescence (CL), we also show that high temperature (800-900 °C) GaN layers grown on top of the low temperature (550 °C) GaN nucleation layers, grown themselves on the GaAs substrates with different orientations, exhibit cubic or hexagonal phase depending on both growth temperature and substrate orientation. [ABSTRACT FROM AUTHOR]

Published
2016
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