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The current paper uses the SCAPS-1D software to investigate the performance of the Al/n-ITO/n-CdS/p-Sb2Se3/p-CuS/Ni solar cell. After adjusting the simulated and experimental J–V features of the traditional ITO/CdS/Sb2Se3/Au solar cell with an efficiency of 7.6%, the influence of diverse factors such as thickness, doping, defect density in each layer, and capture cross section in Sb2Se3 and at the CdS/Sb2Se3 interface on the cell's performance is examined. The highest PCE achieved for the standard cell is 21.05% when the absorber, CdS and ITO layer thicknesses are reduced to 600 nm, 70 nm, and 100 nm, respectively, and their carrier concentrations are fixed at 5.1015, 1019, and 1019 cm−3, respectively. A new hole transport layer, consisting of inorganic copper sulfide (CuS), has been incorporated, thus improving the efficiency by blocking electrons and reducing carrier recombination. The effects of front and back contact work function, temperature, and cell resistance are also discussed. The rear-contact Ni and the front-contact Al were found to be the best arrangements with CuS HTL in the ITO/CdS/Sb2Se3 structure cell. Therefore, the optimization of the proposed Al/ITO/CdS/Sb2Se3/CuS/Ni solar structure reveals good thermal stability with a higher PCE of 23.16% for VOC, JSC, and FF of 0.761 V, 37.59 mA/cm2, and 80.97%, respectively, at 300 K. [ABSTRACT FROM AUTHOR]

This work exhibits a new theoretical approach about a 2T Tandem solar cell made of two cells: CFTS/Si. For maximum benefit, careful consideration must be given to the selection and performance enhancement of both cells. In order to achieve good results, the bottom and top cells are independently analyzed and optimized to set the best structure for each one of them. Two terminal tandem solar cells are very effective in converting energy. However, one of the main limitations of the 2T terminals model is the circulation of the lowest current density since it is similar to an electric series connection between the sub cells. In this paper we tried to define a current matching point with a good current density. The two SC structures (Top and Bottom) under investigation generated impressive performances of about 24.06% and 22.04%, respectively. The evaluation of the tandem Cu2FeSnS4-on-c-Si solar cell produced the following simulation results: Voc= 1.81 V, Jsc= 22.22 mA/cm2, and Fill Factor=87.61% with a conversion efficiency of 35.23 %. The results demonstrate a thorough analysis of both prospective single-cell performance parameters and tandem device architecture. [ABSTRACT FROM AUTHOR]

Herein, FTO/TiO2/Sb2S3/Au solar cell characteristics via SCAPS‐1D modeling are examined. The research begins with device modeling of the Sb2S3 conventional solar cell based on experimental data, which results in excellent agreement with the power conversion efficiency recorded in the literature of ≈4.72%. The influence of several factors on the characteristics of conventional solar cells is then investigated, including Sb2S3 thickness, carrier concentration, bulk and interface defects, and buffer layer type (TiO2, WS2, and CdS). An optimal efficiency of 9.97%, open‐circuit voltage (Voc) of 0.96 V, short‐circuit current (Jsc) of 19.69%, and fill factor (FF) of 52.26% are found for the FTO/WS2/Sb2S3/Au optimized solar cell. Finally, the influence of NiO as the back surface field and parasitic resistance (Rs and Rsh) on the performance of Sb2S3 solar cells is investigated. The innovative solar cell design (FTO/WS2/Sb2S3/NiO/Au) with NiO thickness of 20 nm, Rs < 2 Ω cm−2, and Rsh > 700 Ω cm−2 yields a high efficiency of more than 14.38%, FF > 68.93%, Voc > 1 V, and Jsc > 20.67 mA cm−2. These qualities allow for the large‐scale manufacture of a solar cell by including it in a manufacturing workflow. [ABSTRACT FROM AUTHOR]

In this paper, we presented a numerical study of a CdS/Sb2Se3 mono junction solar cell (SC) using the SC Capacitive Simulator (SCAPS-1D). We validated an experimental work using a variety of Sb2Se3 experimental parameters, and the results showed excellent agreement between numerical and experimental J-V curves, yielding a PCE of 7.54%.To continue, we analyzed the impact of Sb2Se3 thin layer thickness, charge carrier concentration, bulk defect density, and interface defect (CdS/Sb2Se3) on solar cell characteristics. With the optimum Sb2Se3 layer thickness of 1.2 µm, carrier concentration of 1015 cm−3, bulk defect of 1013 cm−3, and CdS/Sb2Se3 interface defect densities of 1010 cm−2, we were able to attain an efficiency of 16.62%, Jsc = 35.38 mA/cm2, Voc = 0.66 V, and FF = 70.33%. Finally, we investigated the insertion effect of n-GaAs (ETL) and P+-CuO HTL (BSF) on Sb2Se3 solar cell efficiency. The novel ITO/n-CdS/n-GaAs/p-Sb2Se3/p+-CuO HTL/Au heterostructure achieved a huge efficiency of 19.60%. [ABSTRACT FROM AUTHOR]

CdS/CIGS mono junction is a potential approach to produce an ultra-high efficiency and low-cost all-thin-film solar cell. In this article, a conventional mono junction with a maximum efficiency of 22.56% at 4 µm of CIGS thickness is developed and optimized. We have combined this cell with Si/MoOx (20 nm) (Si polycrystalline) as a tandem solar cell based on CIGS thin films {(Al-ZnO/CdS/CIGS/Si/MoOx HTL/Mo)} to enhance the CIGS solar cell's efficiency. The new solar cell's characteristic was analyzed by employing SCAPS-1D. From the presented results, it turns out that, the findings of the studied (Al-ZnO/CdS/CIGS/Mo) characteristics are in excellent accordance with those obtained by experimental methods. The aim of the research work was the study of the Si/MoOx layer's influence on the efficiency of the proposed CIGS-based hetero-junction solar cell. A significant efficiency of 28.08% has been obtained for the studied solar cell with 1 µm thick of CIGS, 1 µm and 20 nm of Si, and MoOx layers respectively. All of these findings indicate that CIGS is compatible with Si/MoOx adjoining layers, ensuring good contact and charge transmission. [ABSTRACT FROM AUTHOR]