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Reliability issues stemming from device level non-idealities of non-volatile emerging technologies like ferroelectric field-effect transistors (FeFET), especially at scaled dimensions, cause substantial degradation in the accuracy of In-Memory crossbar-based AI systems. In this work, we present a variation-aware design technique to characterize the device level variations and to mitigate their impact on hardware accuracy employing a Bayesian Neural Network (BNN) approach. An effective conductance variation model is derived from the experimental measurements of cycle-to-cycle (C2C) and device-to-device (D2D) variations performed on FeFET devices fabricated using 28 nm high-$k$ metal gate technology. The variations were found to be a function of different conductance states within the given programming range, which sharply contrasts earlier efforts where a fixed variation dispersion was considered for all conductance values. Such variation characteristics formulated for three different device sizes at different read voltages were provided as prior variation information to the BNN to yield a more exact and reliable inference. Near-ideal accuracy for shallow networks (MLP5 and LeNet models) on the MNIST dataset and limited accuracy decline by $\sim$3.8-16.1% for deeper AlexNet models on CIFAR10 dataset under a wide range of variations corresponding to different device sizes and read voltages, demonstrates the efficacy of our proposed device-algorithm co-design technique.

Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential capacitance in thin film capacitors. The space-charge polarization caused by long-range movement and trapping of protons dominates when the electric field exceeds the threshold value. First-principles calculations suggest the polarization originates from the polar structure created by H doping. We find that polarization decays within ~1 second which is an interesting temporal regime for neuromorphic computing hardware design, and we implement the transient characteristics in a neural network to demonstrate unsupervised learning. These discoveries open new avenues for designing novel ferroelectric materials and electrets using light-ion doping., Comment: 13 pages, 5 figures

Achieving brain-like density and performance in neuromorphic computers necessitates scaling down the size of nanodevices emulating neuro-synaptic functionalities. However, scaling nanodevices results in reduction of programming resolution and emergence of stochastic non-idealities. While prior work has mainly focused on binary transitions, in this work we leverage the stochastic switching of a three-state ferroelectric field effect transistor (FeFET) to implement a long-term and short-term 2-tier stochastic synaptic memory with a single device. Experimental measurements are performed on a scaled 28nm high-$k$ metal gate technology-based device to develop a probabilistic model of the hybrid stochastic synapse. In addition to the advantage of ultra-low programming energies afforded by scaling, our hardware-algorithm co-design analysis reveals the efficacy of the 2-tier memory in comparison to binary stochastic synapses in on-chip learning tasks -- paving the way for algorithms exploiting multi-state devices with probabilistic transitions beyond deterministic ones.

Nanoelectronic devices emulating neuro-synaptic functionalities through their intrinsic physics at low operating energies is imperative toward the realization of brain-like neuromorphic computers. In this work, we leverage the non-linear voltage dependent partial polarization switching of a ferroelectric field effect transistor to mimic plasticity characteristics of biological synapses. We provide experimental measurements of the synaptic characteristics for a $28nm$ high-k metal gate technology based device and develop an experimentally calibrated device model for large-scale system performance prediction. Decoupled read-write paths, ultra-low programming energies and the possibility of arranging such devices in a cross-point architecture demonstrate the synaptic efficacy of the device. Our hardware-algorithm co-design analysis reveals that the intrinsic plasticity of the ferroelectric devices has potential to enable unsupervised local learning in edge devices with limited training data.

Blockchain is one of the emerging technologies with the potential to disrupt many application domains. Cloud is an on-demand service paradigm facilitating the availability of shared resources for data storage and computation. In recent years, the integration of blockchain and cloud has received significant attention for ensuring efficiency, transparency, security and even for offering better cloud services in the form of novel service models. In order to exploit the full potential of blockchain-cloud integration, it is essential to have a clear understanding on the existing works within this domain. To facilitate this, there have been several survey papers, however, none of them covers the aspect of blockchain-cloud integration from a service-oriented perspective. This paper aims to fulfil this gap by providing a service oriented review of blockchain-cloud integration. Indeed, in this survey, we explore different service models into which blockchain has been integrated. For each service model, we review the existing works and present a comparative analysis so as to offer a clear and concise view in each category., Comment: Accepted for publication in the 23rd International Conference on Computer and Information Technology (ICCIT), 2020