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The paper describes several important characterization results obtained from the recently developed high performance front side illuminated 1k x 1k Frame Transfer CCD image sensor that employs charge multiplication concept to multiply photo generated charge directly in charge domain before its conversion into a voltage. The description includes the key device design features that were instrumental in obtaining the high performance and then focuses on the key characterization parameters such as excess noise and carrier distribution of the charge multiplication process. The remaining focus of the article is on the characterization methodology and on the obtained results such as the high clocking frequency (35 MHz), low serial register clock voltage operation, high sensitivity at low light levels, high QE, high blue response, no image lag, overload performance of lateral anti blooming drain structure, etc. In conclusion, several imaging comparisons between the conventional state of the art CCD image sensor and the developed charge-multiplying image sensor are also shown.