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Herein, the magnetic field effect on the source–drain current of organic field-effect transistors with semiconductor layers made of H-bonded pigments is studied. In all devices, an external magnetic field reduces the source–drain current in the transistor. The magnetic field effect is independent of the direction of the applied magnetic field. The observed increase of the magnetoresistance seems to originate from the used semiconductor or the semiconductor–dielectric interface and is not influenced by the nature of the gate electrodes or the semiconductors’ deposition procedure (e.g., grain size, layer thicknesses, etc.). As all prepared devices do have single charge carrier nature, the formation of bipolarons is suggested to be responsible for the observed magnetic field effect. The presented experiments demonstrate that hydrogen-bonded semiconductors behave no different than their classical van der Waals-bonded fully conjugated semiconductors’ counterparts. Version of record

N,N′-Substituted quinacridones are a novel class of commercially available quinacridones for organic electronics which are reported here. In this study, we performed in-depth investigations of the material properties of these molecules i.e. their optical and charge transport properties, infrared-active vibrations (FTIR), electrochemical reduction and oxidation properties, thin film forming and processability, and finally performance in organic field effect transistor devices. We show that substitution plays a critical role in the charge transport properties, with methyl substituted amine being the most favorable, followed by di-phenyl and finally di-butyl. Osterreichische Forschungsforderungsgesellschaft 888408 Version of record