1. Improvement of cut off frequency in InAlGaN/GaN HEMT using biharmonic and thin plate spline optimization techniques for different gate length/ width aspect ratio.
- Author
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Reddy, G. N., Anbuselvan, N., Jeevashri, B., and Alexandar, C. H. C.
- Subjects
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POWER electronics , *MATHEMATICAL optimization , *SPLINES , *STATISTICS , *GALLIUM nitride - Abstract
The implementation of two optimization methodologies, Biharmonic and Thin Plate Spline, aims to improve the cut-off frequency of InAlGaN HEMT on SiC substrate. This is achieved by altering the aspect ratio of the gate length/width to 0.15nm. The study consists of two groups: Group 1 using Biharmonic optimization (BHO) and Group 2 using Thin Plate Spline optimization (TPSO). Each group has 7 samples, resulting in a total of 14 samples. The statistical analysis shows that there is enough statistical power (G power=0.84) to draw meaningful conclusions. The objective is to enhance the cut-off frequency by utilizing AI-driven optimization to adjust the gate length in HEMT. The SPSS analysis of the independent sample t-test shows a result that is not statistically significant (p>0.05) with a value of 0.216. The Biharmonic optimization obtains a cut-off frequency of 242 GHz, while the Thin Plate Spline optimization achieves 209 GHz within the gate length/width range of 0-35 nm. The highest cutoff frequency is observed at a temperature of 35nm, reaching a value of 242.24 GHz. This study highlights the improved performance of Biharmonic optimization (242 GHz) compared to Thin Plate Spline optimization (209 GHz) in improving the cut-off frequency of InAlGaN HEMT for various gate lengths, underlining its potential for power electronics devices. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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