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The semiconductor industry is undergoing a transformative phase, marked by the relentless drive for miniaturization and a constant demand for higher performance and energy efficiency. However, the reduction of metal–oxide–semiconductor field-effect transistor sizes for advanced technology nodes below 10 nm presents several challenges. In response, strained silicon technology has emerged as a key player, exploiting strain induction in the silicon crystal lattice to improve device performance. At the same time, there has been a growing need for characterization techniques that allow in-line monitoring of sample conditions during semiconductor manufacturing, as an alternative to traditional methods such as transmission electron microscopy or high-resolution X-ray diffraction, which have several limitations in terms of measurement time and sample destructiveness. This paper explores the application of advanced spectroscopic characterization techniques, in particular µ-Raman spectroscopy and tip-enhanced Raman spectroscopy (TERS), to meet the evolving needs of the semiconductor industry for quality control and failure analysis, increasingly requiring faster and non-destructive characterization techniques. µ-Raman provides insight into strain values and distributions of strained layers with different thicknesses and germanium concentrations, but its lateral resolution is constrained by the Abbe diffraction limit. TERS, on the other hand, emerges as a powerful non-destructive technique capable of overcoming diffraction limits by exploiting the combination of an atomic force microscope with a Raman spectrometer. This breakthrough makes it possible to estimate the chemical composition and induced strain in the lattice by evaluating the Raman peak position shifts in strained and unstrained silicon layers, providing crucial insights for nanoscale strain control. In particular, this paper focuses on the TERS characterization of Si0.7Ge0.3 epitaxial layers grown on a silicon-on-insulator device, demonstrating the effectiveness of this technique and the high lateral resolution that can be achieved. [ABSTRACT FROM AUTHOR]

One of Jung's most significant contributions concerns the mysterious, inexplicable and always out‐of‐reach nature of the self. In this paper, I will focus on the borders of the self and their nature, location and dynamics of maintenance and change in geographically, historically, and culturally situated subjects. Reflecting on the refugee experience, I intend to gain more insights into our psychic functioning and the dynamics of the self in relation to itself, the other and groups. The experiences of some refugees, marked bysignificant trauma and migration, shed light on how the boundaries of the self are frequently contested and perpetually negotiated with others, and how our subjectivity is shaped by ongoing dynamics of occupation, dispute and/or negotiation, conducted at various levels of our social and individual existence. My argument is that these processes occur at a specific site: the boundaries of the self, involving intrapsychic, interpersonal and group psychological dynamics, with reverberations in the socio‐political and cultural spheres, and reciprocal influences between all these levels. This paper aims to concentrate on the shifts in these boundaries, illustrated through clinical vignettes. [ABSTRACT FROM AUTHOR]

The realization of the Self, although the absolute basis of Jungian psychology, has internal inconsistencies, is difficult to understand, and offers a promise of realization that cannot be fulfilled. This has weakened it, and its existence is now one of speculation. If this is the case, what is to be done with it in the consulting room? How should it be introduced and accounted for, if at all? This paper suggests some alternatives but concludes that the myth of the Self has gravitas in other established traditions, and it is those that offer a more coherent framework for the emergence of the Self. [ABSTRACT FROM AUTHOR]

Copyright of Journal of Analytical Psychology is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Copyright of Journal of Analytical Psychology is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

The Southern Oscillation Index (SOI) and Sunspot Numbers (SSN) have long been recognized as key indicators of precipitation variability in various regions across the world. Understanding the influence of SOI and SSN on precipitation is crucial for effective water resource management, particularly in areas dependent on rainfall for their water supply. This study aimed at examining influences of SOI and SSN on precipitation variability in the highlands of Lesotho, a region that is particularly a source of country's income and hydro energy. Key findings of this study showed a wide range of variability in SOI (M = -1,002; SD = 10,514) and SSN (M = 73,778; SD = 66,745) as well as in the dam precipitation measurements. A Mood test indicated a statistically significant difference in precipitation across the selected weather stations (U(3) = 9.685, p = 0.021). The Pettitt's test for homogeneity showed no significant difference in the precipitation data for the four weather stations. The Dickey-Fuller test results showed strong evidence of stationarity in the precipitation data for the four stations. The Mann Kendall trend test showed a statistically significant trend in the SSN data (Kendall's tau = -0.241, two-tailed p-value = or less than 0.0001) but not in the other data sets. The correlation analysis showed a weak positive relationship between SOI and precipitation in the dams (r = 0.083, p = 0.086 for Katse dam and r = 0.070, p = 0.146 for Mohale dam), while SSN had a strong negative correlation with precipitation in the dams (r = -0.025, p = 0.604). These results suggest that SOI and SSN play a significant role in the precipitation patterns in the dams and further studies are needed to explore their full extent and implications for water resources management. This study provides evidence of the significant influence of SOI and SSN on precipitation variability in the highlands of Lesotho, with a weak positive relationship between SOI and precipitation and a strong negative relationship between SSN and precipitation. Further research is necessary to understand the implications of these findings for water resources management in the region. [ABSTRACT FROM AUTHOR]

In the presented study, the effects on engine performance and emissions were experimentally examined by using different ratios of fuel blends and SOI changes in a single-cylinder diesel engine. Experiments were carried out at a constant engine load (%50 load) under a constant engine speed of 2400 rpm and a different SOI. Firstly, B20, T10, and T20 fuels were utilized in place of D100 in a diesel engine as alternative fuels. And then, T10 fuel was utilized instead of D100 fuel, and the impact of this change on emissions and engine performance was examined for various SOIs. Although there was a decrease in IMEP with B20 use, T10 and T20 increased IMEP compared to D100. In addition, although the fuels used instead of D100 significantly reduce CO, HC and smoke opacity, they create a partial increase in NOx emissions. Although there was an increase in NOx emissions with the use of alternative fuels, there was a decrease in the use of T10 and T20 fuels compared to B20. This reduction in NOx due to the use of T10 and T20 is important for the use of biodiesel in diesel engines. In the study, it was seen that the SOI change was effective on the results in the T10 fuel experiments, and the most suitable angle for SOI in the use of T10 fuel in diesel engines was 21°CA and 23°CA. T10 fuel has been shown to have a promising effect on engine performance and emissions. [ABSTRACT FROM AUTHOR]

This paper reports, the enhanced electrical parameters of sub-10 nm High-k SOI GaN FinFET by implementing fin optimization approach using TCAD simulation. The results show that as the fin aspect ratio (AR) increases, keeping the channel cross-sectional area constant, the static and analog performance of the suggested device enhances. On current of 0.15 mA, higher switching ratio (ION/IOFF) ratio (1.74 × 109), reduced subthreshold swing (by 20%), and higher intrinsic gain has achieved for High-k SOI GaN FinFET having a higher fin AR (3.75) as compared to the lower fin aspect ratio (1.67) owing to the significant reduction in short channel effects. For more insight into the static/analog performances of the device; some other parameters such as transconductance (gm), energy band profile, surface potential, output conductance (gd), output resistance (Ro), and early voltage have also been investigated under fin optimization approach (fin aspect ratio modulation). Thus, the enhanced static/analog performances of the High-k SOI GaN FinFET clear the way for RFIC design. [ABSTRACT FROM AUTHOR]

Cette étude présente une réflexion sur l'habitation d'un lieu et la constitution d'un « Soi territorial », dans le contexte de la vie et du travail « paysan ». L'hypothèse est alors posée d'une possible « psychopathologie de la (dé-) territorialisation », selon laquelle un « non-lieu », générateur de non-sens, peut se trouver impliqué dans une dynamique suicidaire en lien spécifique avec la dimension territoriale du Soi et l'habitation impossible d'un lieu. Les aspects cliniques et psychopathologiques sont appréhendés dans la perspective du lien entre certains « paysans de tradition » et leur lieu de vie, au regard de l'empreinte réciproque entre psychisme et territoire. Cette réflexion exploratoire permet d'orienter des recherches cliniques auprès d'agriculteurs en souffrance en marge des « troubles psycho-sociaux » habituellement recensés. Les limitations et impasses induites par des processus dissociatifs, ou mélancoliques sont rapportés soit à une défaillance de la Présence, compromettant la construction d'un monde habitable, c'est-à-dire territorialisable, soit à l'hostilité d'un monde réfractaire à la dynamique d'un processus de territorialisation, et donc inapte à permettre d'y séjourner. Ces considérations ouvrent une perspective originale de recherches qualitatives visant à appréhender les rapports entre altération des assises territoriales du Soi et intentionnalité suicidaire. This study presents a reflection on the inhabitation of a place and the constitution of a territorial Self,' in the context of 'country' life and work. The hypothesis is then put forward of a possible 'psychopathology of (de-)territorialization,' according to which a 'non-place,' generator of meaninglessness, may be involved in a suicidal dynamics specifically linked to the territorial dimension of the Self and the impossible inhabitation of a place. The clinical and psychopathological aspects are examined from the perspective of the link between certain 'traditional farmers' and the place where they live, with regard to the reciprocal imprint between psyche and territory. This exploratory study will provide guidance for clinical research into the suffering of farmers who fall outside the scope of commonly identified 'psycho-social disorders.' The limitations and impasses induced by dissociative or melancholic processes are related either to a failure of Presence, compromising the construction of a habitable world, i.e. one that can be territorialized, or to the hostility of a world that is resistant to the dynamics of a territorialization process, and therefore unfit to allow us to dwell in it. These considerations open up an original perspective for qualitative research aimed at understanding the relationships between alteration of the territorial foundations of the Self and suicidal intentionality. [ABSTRACT FROM AUTHOR]

The field of experimental microsurgery was pioneered by the great microsurgeon Sun Lee, who developed the foundation of transplant surgery in the clinic. Dr Lee also played a seminal role in introducing microsurgery to establish mouse models of cancer. In 1990, at the age of 70, Dr Lee demonstrated microsurgery techniques to the mouse-model team at AntiCancer Inc., leading to the development of the surgical orthotopic implant (SOI) technique and the first orthotopic mouse models of cancer that metastasized in a pattern similar to clinical cancer. At the beginning of the present century, one of us (NY) from Kanazawa University School of Medicine became a visiting scientist at AntiCancer to learn SOI and develop mouse models of cancer using cancer cells expressing fluorescent reporter genes, such as green fluorescent protein (GFP) and red fluorescent protein (RFP), in order to image metastatic cancer cells trafficking in real time. Since then, a total of eight young surgeons from Kanazawa University have been visiting researchers at AntiCancer, developing SOI mouse models of cancer to visualize cancer cells in vivo, tracking all stages of metastasis in real time. The present perspective review summarizes this seminal work, which has revolutionized the field of metastasis research. [ABSTRACT FROM AUTHOR]

Hot carrier instability (HCI) in a floating body cell (FBC) has been investigated. The FBC is a dynamic random-access memory (DRAM) made entirely of a silicon-on-insulator (SOI)-MOS without a capacitor. For FBC realization, there is an influence of a physical phenomenon different from the normal MOS because of its structural and operational characteristics of SOI-MOS. The difference between bulk and SOI-MOS is not yet clear, especially for HCI. In this study, we clarified the importance of the structural and geometrical factors of the FBC cell transistor and the SOI-specific floating body effect in the HCI regime of FBCs. [ABSTRACT FROM AUTHOR]

This paper presents a 6-bit phase shifter operating in the 11∼13 GHz band. The designed phase shifter is fabricated using a 130-nm SOI process to validate its performance. For fine phase adjustment, the phase shifter employs six single-bit phase shifters ranging from 5.625° to 180°. To expand the bandwidth and minimize the phase and gain errors, the 90° bit uses low-pass and high-pass filters. Additionally, the 180° bit uses a transformer-based switch structure. The fabricated phase shifter measures 0.87×0.4 mm², with a return loss of more than 10 dB, an average insertion loss of 6.41 dB, RMS phase errors ranging from 3.19° to 4.13°, and RMS gain errors between 0.52 dB and 0.56 dB. [ABSTRACT FROM AUTHOR]

The incorporation of nanostructures such as silicon nanocrystals into the oxide of an MOS structure has attracted significant interest in improving the performance of MOS-based devices. However, integrating crystalline silicon quantum wells into this structure remains a challenge due to the difficulties associated with growing a crystalline Si film on an amorphous oxide. This study presents the fabrication and electrical characterization of a quantum well formed by the thermal oxidation of an ultrathin silicon-on-insulator (UT-SOI) film. Structural analysis by electronic transmission reveals the formation of a monocrystalline quantum well with a homogeneous thickness and a perfectly flat surface, free from any crystalline defect. The electrical characterizations, carried out using capacitance–voltage (C–V) and current–voltage (I–V) measurements, confirm the success of the integration of the quantum well into the MOS structure. In addition, a systematic study of the dielectric properties details the evolution in bias voltage and in frequency of the main dielectric parameters of the structure such as the dielectric constant (ε*), the electrical loss (Tan δ), and the electrical modulus (M*). The results obtained demonstrate normal operation of the new structure, paving the way for efficient integration of this type of nanostructures in MOS-based photodetectors and solar cells. [ABSTRACT FROM AUTHOR]

The Southern Ocean, its ecosystem, and inhabitants are vulnerable to climate‐mediated shifts in habitat conditions. These changes can affect marine predators in the long term through changes in the distribution, density, and quality of prey. To understand how these changes affect vital rates requires longitudinal studies integrating demography and environmental states. We analyzed 22 years of capture–mark–recapture data to quantify the influence of broad‐scale climate on the survival of male southern elephant seals from Macquarie Island, Tasmania, Australia. Weaning mass was incorporated as a quadratic predictor of survival to account for the known influence of maternal investment. First‐year survival was greatest for weaners weighing 160 kg. Subsequent developmental stages were grouped into juvenile, subordinate, and breeding adult states to reflect the known life history of individuals. We found increased juvenile and subordinate survival with positive values of the previous years' Southern Annular Mode. This is likely due to the northward shift of westerly winds increasing productivity and prey availability in the Sub‐Antarctic region. In contrast to females of this population, the Southern Oscillation Index did not affect male survival. In this highly polygynous mating system, sex‐dependent differences in foraging behavior may be causing the small number of successful breeding adult males to be less susceptible to external influences after reaching the minimum age and body size required to be socially competitive for mating. These extremely large bulls will breed with multiple females and thus make a disproportionate contribution to the gene pool of the next generation. Considering the susceptibility of males to climate influences is therefore highly relevant to assessing the future adaptive capability of the species. [ABSTRACT FROM AUTHOR]

We designed a narrow-linewidth external-cavity hybrid laser leveraging a silicon-on-insulator triple Euler gradient resonant ring. The laser's outer cavity incorporates a compact, high-Q resonant ring with low loss. The straight waveguide part of the resonant ring adopts a width of 1.6 μm to ensure low loss transmission. The curved section is designed as an Euler gradient curved waveguide, which is beneficial for low loss and stable single-mode transmission. The design features an effective bending radius of only 26.35 μm, which significantly improves the compactness of the resonant ring and, in turn, reduces the overall footprint of the outer cavity chip. To bolster the laser power and cater to the varying shapes of semiconductor optical amplifier (SOA) spots, we designed a multi-tip edge coupler. Theoretical analysis indicates that this edge coupler can achieve an optical coupling efficiency of 85%. It also reveals that the edge coupler provides 3 dB vertical and horizontal alignment tolerances of 0.76 μm and 2.4 μm, respectively, for a spot with a beam waist radius of 1.98 μm × 0.99 μm. The outer cavity, designed with an Euler gradient micro-ring, can achieve a side-mode suppression ratio (SMSR) of 30 dB within a tuning range of 100 nm, with a round-trip loss of the entire cavity at 1.12 dB, and an expected theoretical laser linewidth of 300 Hz. [ABSTRACT FROM AUTHOR]

This study presents the development of rainfall forecast models using potential climate indices for the Kimberley region of Western Australia, using 100 years of rainfall and climate indices data for four rainfall stations. Three different modeling techniques: multiple linear regression (MLR), autoregressive moving average with exogenous input (ARIMAX), and gene-expression programming (GEP) were applied to develop prediction models. Preliminary analysis suggests that Western Tropical Indian Ocean (WTIO) and Southern Oscillation Index (SOI) have significant impacts on summer rainfall generation for the region. Developed models' performances were evaluated using Pearson correlation coefficient (r ), root mean square error ( RMSE ), mean absolute error (M A E) , Nash–Sutcliffe efficiency (N S E) , and refined Willmot index of agreement ( d r ). It is found that the GEP model exclusively outperforms the other two alternatives. In the calibration period, the GEP model resulted in a Pearson correlation coefficient (r) values ranging from 0.76 to 0.85, which are significantly higher than that achieved from MLR (0.32 to 0.44) and ARIMAX (0.53 to 0.83) models, while for the validation period, the correlation values for the models ranged from 0.74 to 0.87 for GEP, 0.35 to 0.51 for MLR and 0.59 to 0.77 for ARIMAX models. Considering other statistical error statistics it can be concluded that the GEP model is the best representative seasonal rainfall forecasting model for the region. [ABSTRACT FROM AUTHOR]

La notion d’identité narrative place la possibilité de l’identité à soi (ou identité-idem) avec celle du changement. Mais a-t-on besoin d’une médiation « dialectique », comme la désigne Ricœur, entre identité et changement ? Seulement si l’identité est supposée exclure le changement. Or, tel n’est pas le cas de l’identité au sens le plus fondamental du terme, l’identité numérique. La seconde difficulté tient à ce que Ricœur paraît souvent rabattre l’une sur l’autre les notions d’histoire et de narration. Nous sommes des êtres historiques, cela n’est guère discutable, mais est-ce à dire que notre identité dépend de la narration que nous faisons de notre histoire ? Enfin, la troisième aporie réside dans la place primordiale accordée par Ricœur à la fiction dans sa détermination de l’identité narrative. Or il n’est pas du tout évident que les personnages de fiction jouissent d’une identité véritable en un quelconque sens. Des théoriciens contemporains de la référence, tels Saul Kripke ou David Kaplan, ont au contraire insisté sur le fait que les personnages romanesques ne possédaient qu’une apparence d’identité. Comment dès lors faire de ce semblant d’identité, qui se réduit à un faisceau de caractéristiques plus ou moins stables, le modèle pour penser nos identités réelles.

This work showcases the implementation of 16 Boolean logic functions through a double-gate (DG) fully depleted (FD) Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET). The DG-FD-SOI device with an independent gate operation highlights that Boolean logic functions can be implemented in two steps (Program and Read), and Boolean logic output “High” (“1”) and “Low” (“0”) depends on the floating body effect. The Program (Step 1) operation is based on band-to-band tunneling and forward bias mechanisms, while the Read (Step 2) operation is based on drift and impact ionization mechanism. The program and read operations for logic-in-memory computing are performed in ~10 ns and consume low energy ( $\sim 4.04\times 10 ^{-14}$ J) during the read operation. The results also show that the device with optimized device dimensions, biasing, and timing scheme achieves a drain current ratio of $\sim 10^{5}$ . These results reveal that DG-FD-SOI-based MOSFET for logic-in-memory computing is a compelling alternative to the limitations of von Neumann architectures, offering significant speed and energy efficiency advantages.

The EZ-FET is a device with simplified architecture and processing that enables fast electrical characterization of semiconductor films on insulators (SOI) with only two lithography levels and using regular process steps. For low temperature SOI substrates characterization, the EZ-FET must be processed at a low temperature, including the junctions formation, i.e., the dopant activation process. Two EZ-FET dopant activation approaches using nanosecond laser annealing at low thermal budget are presented in this work. The first is the classical process of partial source and drain amorphization followed by their recrystallization. The second is a simplified process consisting of full source and drain amorphization followed by recrystallization. Both approaches are evaluated through the analysis of the electrical behaviors of the resulting structures.

Grating couplers are essential components in silicon photonics that facilitate the coupling of light between waveguides and fibers. Optimization of the grating couplers to reach <1 dB loss when coupling to single-mode fibers (SMFs) has been reported in the literature, but this was based on silicon-on-insulator (SOI) waveguides supporting multi-modes. In this paper, using a deep-learning model combined with an inverse-design process, we achieve <1 dB losses for grating couplers implemented over single-mode SOI waveguides, i.e., a maximum efficiency of 80.5% (−0.94 dB) for gratings constrained with e-beam (EB) lithography critical dimension (CD), and a maximum efficiency of 77.9% (−1.09 dB) for gratings constrained with deep ultraviolet (DUV) lithography CD. To verify these results, we apply covariance matrix adaptation evolution strategy (CMA-ES) and find that while CMA-ES yields slightly better results, i.e., 82.7% (−0.83 dB) and 78.9% (−1.03 dB) considering e-beam and DUV, respectively, the spatial structures generated by CMA-ES are nearly identical to the spatial structures generated by the deep-learning model combined with the inverse-design process. This suggests that our approach can achieve a representative low-loss structure, and may be used to improve the performance of other types of nanophotonic devices in the future. [ABSTRACT FROM AUTHOR]

Based on S-parameter measurements, the effect of dynamic trapping and de-trapping of charge in the gate oxide, the increase of dielectric loss due to polarization, and the impact of leakage current on the small-signal input impedance at RF is analyzed and represented. This is achieved by systematically extracting the corresponding model parameters from single device measurements at different frequency ranges, and then the methodology is applied to analyze the evolution of these parameters when the device is submitted to non-conducting electrical stress. This approach not only allows to inspect the impact of effects not occurring under DC conditions, such as the current due to the time varying dielectric polarization, but also to clearly distinguish effects in accordance with the functional form of their contribution to the device's impedance. In fact, it is shown that minor changes in the model of the gate capacitance by including additional resistive and capacitive components allows for an excellent model-experiment correlation up to 30 GHz. Moreover, the accuracy of the correlation is shown to be maintained when applying the proposal to the device under different gate-to-source bias conditions and at several stages during off-state degradation. [ABSTRACT FROM AUTHOR]

Copyright of Ricoeur Studies / Etudes Ricoeuriennes is the property of University of Pittsburgh, University Library System and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Introduction. The characteristics of solid-state microwave switches are subject to different requirements depending on the application area and technical problems to be solved. No versatile solution exists that could satisfy all requirements at once. The desire to improve the parameters of switches has led to the emergence of devices based on various technologies. In order to elucidate the current trends and future prospects in the field of switch technologies, semiconductor devices that form the basis of switch circuits should be considered.Aim. To review transistor types used in solid-state switches.Materials and methods. The search and selection of literature sources for review was based on the chronological principle. The search depth for considering the parameters of finished components was no more than 10 years, for considering technologies and structural solutions – more than 10 years. This choice was explained by our desire to trace the history of development and approaches to the creation of semiconductor devices that have led to the emergence of the modern component base. The final array of sources comprised scientific publications presenting factual information on the objects under consideration.Results. The types, structures, materials, characteristics and manufacturing technologies of transistors used in switches are considered. The achievable parameters of the switches based on the considered devices are presented. Conclusion. The choice of a particular transistor type for switches depends on the requirements for the parameters and performance characteristics of the final device. At present, transistor solutions for switches are dominated by field-effect transistors (FETs) of various types: GaAs and GaN transistors with a high electron mobility (HEMT) and Si CMOS FETs implemented by standard as well as silicon-on-insulator and silicon-on-sapphire technologies. The conducted literature review has revealed prospects for the development of technologies based on BiCMOS heterojunction bipolar transistors.

This study proposes a simulation-based design for a Silicon-On-Insulator (SOI) ring resonator with a Figure of Merit (FOM) of 56.15 and a high sensitivity of up to 730 nm/RIU. The Finite-Difference Time-Domain (FDTD) technique was used to assess and evaluate the design quantitatively. Our design demonstrates higher sensitivity compared to many recent studies conducted on SOI-based sensors. The device structure follows a conventional ring resonator arrangement with a single waveguide, incorporating a 2D graphene layer on top of the SiO2 wafer and a gold nano-disc positioned at the center of the ring. Our findings highlight the device's susceptibility to refractive index variations, making it a desirable choice for various sensing applications. We have investigated the sensor's capabilities for sensing different concentrations of milkmilk. Graphene and gold materials enhance the device's response to light and provide comparatively higher sensitivity. The suggested design can serve as a blueprint for device fabrication, considering the practicality of implementing an SOI-based device using standard techniques for silicon processing.

Bangkok, the capital of Thailand, grapples with several urban challenges, including traffic accidents, congestion, and underdeveloped sidewalks. These issues stem from the escalating use of private cars and motorcycles driven by rapid urbanization, accompanying economic growth, and the unique street geometry of the city. Furthermore, despite the development of railroads, issues persist with the poor walking environment for pedestrian access to stations, posing a challenge to the promotion of safe and environmentally friendly public transportation. This study evaluated streets' spatial performance, focusing on the performance of soi, the intricate network of narrow urban pathways in Bangkok. Leveraging an AI model capturing pedestrian value, this study subsequently assessed accessibility from typical residential areas to public transportation stations. The findings shed light on the challenges faced by sois in Bangkok. Based on the findings, practical implications were discussed and provided to inform urban designers, with the aim of promoting public transportation usage and encouraging a more sustainable urban form. [ABSTRACT FROM AUTHOR]

Rainfall erosivity is a critical factor affecting soil erosion and agricultural productivity. This study aims to analyze rainfall erosivity in the northern region of Algeria using a hybrid approach that combines empirical and modeling techniques. The primary objectives are to identify homogeneous regions, assess their susceptibility to climate change, and determine the wet and dry periods impacting the study area. Additionally, the modified Fournier Index (MFI) is calculated over 76-years (1941–2016) using data from 33 pluviometric stations. The results reveal distinct wet and dry periods in the study area, with abundant rainfall occurring in winter/autumn and spring, followed by a summer drought. The northern region exhibits high erosivity levels, ranging from severe to very severe, while the southeast and other regions experience low to moderate erosivity. Region 4 demonstrates the highest rain aggressiveness and moderate to severe erosion throughout the study period. Spatial analysis shows an increasing MFI gradient from west to east and south to north. Furthermore, the study establishes a positive correlation between MFI and the Southern Oscillation Index, indicating that El Niño and La Niña have a significant influence on sedimentary production. Overall, this research provides valuable insights into rainfall erosivity patterns in Northern Algeria, aiding in the identification of high-risk areas and supporting sustainable land management strategies. [ABSTRACT FROM AUTHOR]

A commercial thermo-optic phase shifter (TOPS) is an efficient solution to the imbalance problem in the fabrication process of Mach–Zehnder modulator (MZM) arms. The TOPS consumes electrical power and transforms it into thermal energy, which changes the real part of the effective refractive index at the waveguide and adjusts the MZM transfer function to work in the linear region. The common model being used today is constructed with only one heater; however, this solution requires more electrical power, which can increase the transmitter system cost. To reduce the system energy cost, we propose a pioneering optimal double titanium nitride heater model under forward biasing at 1550 nm wavelength using the standard silicon-on-insulator technology. Numerical investigations were carried out on the key relative geometrical parameters, heat distribution at the silicon layer, thermal crosstalk, and laser wavelength drift. Results show that the optimal TOPS design can function with a low electrical power of 19.1 mW to achieve a π-phase shift, with a low thermal crosstalk of 0.404 and very low optical losses over 1 mm length. Thus, the proposed device can be used for improving the imbalance problem in MZMs with low electrical power consumption and low losses. This functionality can be utilized to obtain better performances in transmitter systems for data centers and long-range optical communication system applications. [ABSTRACT FROM AUTHOR]

Many silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) are used in deep space detection systems because they have higher radiation resistance than bulk silicon devices. However, SOI devices have to face the double challenge of radiation and conventional reliability problems, such as hot carrier stress, at the same time. Thus, we wondered whether there is any interaction between reliability degradation and irradiation damage. In this paper, the effect of hot-carrier injection (HCI) on γ-ray-irradiated partially depleted (PD) SOI n-MOSFETs with a T-shaped gate structure is investigated. A strange phenomenon that accelerated the annealing effect on irradiation devices caused by HCI in 5 s was observed. That is, HCI has fast recovery ability on the irradiated narrow-channel n-MOSFETs. We explain the physical mechanism of this recovery effect qualitatively. Moreover, we designed a comparable experiment to evaluate the effect on the wide-channel devices. These results show that the narrow-channel devices are more sensitive to irradiation and HCI effects than wide-channel devices. [ABSTRACT FROM AUTHOR]

Total ionizing dose (TID) irradiation impacts the device leakage currents or threshold voltage, which affects the single event transient (SET) vulnerability of electronics under radiation environment. SET response of SOI FinFET at 14 nm technology node after TID exposure is carried out at different dose level. Results show that the drain current peak presents a slight fluctuant with total dose, while the collected charge and the bipolar amplification coefficient first decrease with total dose and then increase. The potential reason is also discussed from competing mechanisms associated with decreasing threshold voltage from TID irradiation and increasing the drain diffuse current from the potential of the channel. [ABSTRACT FROM AUTHOR]

We designed a narrow-linewidth external-cavity hybrid laser leveraging a silicon-on-insulator triple Euler gradient resonant ring. The laser’s outer cavity incorporates a compact, high-Q resonant ring with low loss. The straight waveguide part of the resonant ring adopts a width of 1.6 μm to ensure low loss transmission. The curved section is designed as an Euler gradient curved waveguide, which is beneficial for low loss and stable single-mode transmission. The design features an effective bending radius of only 26.35 μm, which significantly improves the compactness of the resonant ring and, in turn, reduces the overall footprint of the outer cavity chip. To bolster the laser power and cater to the varying shapes of semiconductor optical amplifier (SOA) spots, we designed a multi-tip edge coupler. Theoretical analysis indicates that this edge coupler can achieve an optical coupling efficiency of 85%. It also reveals that the edge coupler provides 3 dB vertical and horizontal alignment tolerances of 0.76 μm and 2.4 μm, respectively, for a spot with a beam waist radius of 1.98 μm × 0.99 μm. The outer cavity, designed with an Euler gradient micro-ring, can achieve a side-mode suppression ratio (SMSR) of 30 dB within a tuning range of 100 nm, with a round-trip loss of the entire cavity at 1.12 dB, and an expected theoretical laser linewidth of 300 Hz.

This paper suggests an analysis of SOI-based GaN FinFET that considers high-k gate oxide into account. The effect of using SOI substrate and a high-k dielectric layer on ON current, OFF current, electric field, electron mobility, conduction & valence band energy, and subthreshold swing is reported. All these parameters are analyzed and compared with bulk GaN FinFET and Si FinFET. We achieve better ON current, faster speed, and more minor subthreshold swing, reducing the short channel effects. A shallow OFF current is obtained because of bulk conduction in the GaN channel area, which the gate can deplete. Several RF/analog metrics are also noted, including transconductance (gm), cut-off frequency (fT), transconductance frequency product (TFP), and transconductance generation factor (TGF), and comparison with Bulk GaN FinFET and Si FinFET is presented. Finally, the linearity metrics like 2nd and 3rd-order voltage intercept points, IIP3, and 1-dB compression point is extracted. Compared to the other two structures, the suggested structure exhibits advantageous DC and RF/analog performances. A comparison of different Figures of Merits (FoMs) for the suggested device with previously published literature is also given.

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Silicon-on-insulator (SOI) wafers are crucial raw materials in the manufacturing process of microelectromechanical systems (MEMS). Residual stresses generated inside the wafers during the fabrication process can seriously affect the performance, reliability, and yield of MEMS devices. In this paper, a low-cost method based on mechanical modeling is proposed to characterize the residual stresses in SOI wafers in order to calculate the residual stress values based on the deformation of the beams. Based on this method, the residual strain of the MEMS beam, and thus the residual stress in the SOI wafer, were experimentally determined. The results were also compared with the residual stress results calculated from the deflection of the rotating beam to demonstrate the validity of the results obtained by this method. This method provides valuable theoretical reference and data support for the design and optimization of devices based on SOI-MEMS technology. It provides a lower-cost solution for the residual stress measurement technique, making it available for a wide range of applications. [ABSTRACT FROM AUTHOR]

The Standards of Identity (SOI) for food may prevent the adoption of the strategies that help sustain the development of some food industries. This study provides comprehensive insights into the possibility of regulation changes with SOI for orange juice from consumer perspectives. Results show that the juice blends with 50% orange juice and 50% tangerine juice received the highest sensory scores. However, most consumers do not think juice blends with less than 70% orange juice can be called orange juice. The WTP for juice blends with less than 70% orange juice also decreases significantly. The results provide strong support for modifying the current SOI for orange juice. In addition, the ratio of 70% orange juice and 30% non‐orange juice (tangerine/mandarin) is an appropriate threshold for starting the change to the SOI for orange juice. Successful modification to food SOI should consider its impact on both food quality and consumer perceptions. [ABSTRACT FROM AUTHOR]

The main objective of this work is to present an analysis of the performance of Ultra-Thin-Body and Buried Oxide transistors working as Ultra-Low-Power and standard-nMOS diodes. The implementation of different ground planes and substrate biases is analyzed. It is shown a reduced leakage current and increased ratio between the on and off-state currents for both systems with the nMOS devices’ substrate biased at −2 V. The standard-nMOS shows a reduced leakage current and increased ratio between the on and off-state currents with the substrate bias at −2 V and with a P-type ground plane implemented while the Ultra-Low-Power presents only a significative influence of the ground planes on the ratio between the on and off-state currents. The ground planes do not provoke a significant change in the leakage current, but a noticeable variation can be observed in the ratio between the on and off-state currents due to the higher threshold voltage in relation to the system without ground plane.

In this work, an experimental evaluation of Gate-Induce Drain Leakage (GIDL) current is presented for nanowire and nanosheet-based SOI transistors. The effects of fin width and temperature increase are studied. Obtained results indicate that the increase in device width makes the GIDL current more sensitive to temperature increase. Three-dimensional numerical simulations have shown that despite the reverse junction leakage increase with temperature, leakage current in nanosheet and nanowire transistors is composed predominantly of GIDL current. The change in valence and conduction bands caused by temperature increase favors the band-to-band tunneling, which is responsible for the worsening of GIDL at high temperatures.

This paper considers how labels may be used: "Neurodiverse," "genderfluid," "sex‐positive," "ADHD," and "highly‐sensitive" are just some of the labels that may be offered by patients in introducing themselves. Such labels can be thought of as shortcuts, a way to define identity and sum up a feeling state, attitude, or behaviour. While they may sometimes be "given" in the sense of a diagnosis, they are also "found" and self‐adopted. Using scaffolding as a metaphor for allowing growth or development to take place (or compensate for its absence), the phenomenon of self‐labelling is presented as fulfilling different functions, namely: Label as mirrored reflection; Label as creative defence; Label as something with which to play; Label as container for that which cannot yet be known; Label as calling something into being; and Label as collective dream image. The article starts with three brief composite clinical sketches, and goes on to explore some of the ways that labels may be used with reference to the presented clinical material. [ABSTRACT FROM AUTHOR]

An optical coupler is a key input/output (I/O) device in a photonic integrated circuit (PIC), which plays the role of light-source import and modulated light output. In this research, a vertical optical coupler consisting of a concave mirror and a half-cone edge taper was designed. We optimized the structure of mirror curvature and taper through finite-difference-time-domain (FDTD) and ZEMAX simulation to achieve mode matching between SMF (single-mode fiber) and the optical coupler. The device was fabricated via laser-direct-writing 3D lithography, dry etching and deposition on a 3.5 µm silicon-on-insulator (SOI) platform. The test results show that the overall loss of the coupler and its connected waveguide at 1550 nm was 1.11 dB in transverse-electric (TE) mode and 2.25 dB in transverse-magnetic (TM) mode. [ABSTRACT FROM AUTHOR]

In this study, a silicon on insulator vertical super-thin body (SOI VSTB FET) is proposed and a comparative analysis of the electrical properties of SOI and conventional VSTB FET is discovered in detail. The use of suitable doping profiles significantly improves the On–Off current ratio (ION/IOFF) and sub-threshold swing (SS) of the proposed device. The SOI VSTB FET supports aggressive scaling while maintaining electrostatic integrity and low supply voltage to a large extent. The results also revealed that the SOI VSTB FET is superior in terms of Off-current (IOFF), On-current (ION), and Sub-threshold swing (SS) in comparison with the conventional VSTB FET. [ABSTRACT FROM AUTHOR]

Copyright of Estilos da Clínica is the property of FEUSP - Faculdade de Educacao da USP - Universidade de Sao Paulo and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)