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Silicon carbide and its derivatives are promising materials with potential applications in various types of nuclear reactors. To better understand their characteristics, this paper investigates the recrystallization behavior of amorphous SiC prepared through pre-irradiation using 800 keV Kr2+. Following different annealing processes, Raman spectra revealed that recrystallization happened beyond 873 K, and nearly complete recrystallization of the amorphous layer occurs at 1423 K. Afterward, in situ annealing and He+ irradiation experiments were conducted. The results indicate that the recrystallization progress is a layer-by-layer epitaxial regrowth on the amorphous–crystal interface under 873 K annealing, and the epitaxial recrystallization would slow down mainly due to the accumulation of defects and Kr atoms. However, under 30 keV He+ irradiation at 873 K, the interface continues to move. Moreover, when the irradiation dose rises, nanocrystals and helium bubbles appear simultaneously, growing in both size and density. The different recrystallization behaviors caused by irradiation and non-irradiation conditions could be explained by radiation-enhanced atomic diffusion, and helium bubbles are likely to be the by-products of nanocrystal formation. A possible explanation is proposed. This study provides insights into the practical application of amorphous silicon carbide in reactors and other irradiation environments. [ABSTRACT FROM AUTHOR]

The possibility of using axial spin centers with S = 3 / 2 in silicon carbide for all-optical measurement of the projection B z of the external magnetic field onto the c -axis of the SiC crystal, as well as the polar and azimuthal angles of the magnetic field relative to the direction of the c -axis, at room and significantly higher temperatures is shown. Spin centers in SiC, where optically induced spin alignment occurs, have a unique system of spin levels in a magnetic field, caused by the interaction of the fine structure and hyperfine interaction with the 29 Si nuclei. There is a wide range of level anticrossings (LACs) resulting in an extremely strong change in the photoluminescence intensity at LAC. The dependence of the LAC spectrum on the orientation of the external magnetic field is also observed. The proposed magnetometer is based on the compensation of the external magnetic field at the position of the optical excitation spot of the confocal microscope. The sensitivity to a constant magnetic field for the z-component of the magnetic field (B z) is better than 0.1 μ T / Hz in the confocal volume at room temperature. The sensitivity of polar and azimuthal angle determination depends on the sensitivity of the perpendicular component of the magnetic field, which is better than ∼ 0.01 mT / Hz in the range from − 0.4 to 0.4 mT. [ABSTRACT FROM AUTHOR]

Silicon/carbon (Si/C) nanocomposites are considered as one of the most promising anode materials for lithium-ion batteries due to their high capacity and suitable lithiation potential. However, the complex and time-consuming preparation processes of silicon-based nanocomposites and the unexpected silicon carbide generated during high treatment make it difficult to achieve high-performance Si/C nanocomposites for practical applications. Herein, a silicon/carbon nanocomposite is successfully prepared through a facile and eco-friendly molten salt assisted precarbonization–reduction method using palygorskite (PAL) and sodium alginate as raw materials. Based on physical characterizations, it is demonstrated that the sodium alginate plays a key role in the successful preparation of Si/C nanocomposite, which not only boosts uniform embedding of PAL nanoparticles in the carbon matrix but also releases molten sodium salt to suppress the formation of unexpected SiC. When used as an alternative anode material for lithium-ion battery applications, the as-obtained Si/C composite delivers a high reversible specific capacity of 1362.7 mA h g−1 with an initial Coulombic efficiency of 70.3% at a current density of 200 mA g−1 and excellent long-term cycling stability. The findings here provide a facile and eco-friendly molten salt assisted precarbonization–reduction method for high-performance silicon/carbon anode materials. [ABSTRACT FROM AUTHOR]

Point defect color centers acting as single-photon emitters are promising for quantum technology applications and have been extensively studied, e.g., in the 4H polytype of silicon carbide (SiC). However, the physics of such color centers in other SiC polytypes is much less explored. Herein, we study the formation and thermal stability of such color centers in 6H-SiC using photoluminescence spectroscopy. The emissions from typical single-photon emitters, such as silicon vacancies, divacancies, and carbon antisite-vacancy pairs in 6H-SiC, were monitored as a function of the proton irradiation fluence and post-irradiation annealing, and compared to that in 4H-SiC. Overall, at the background of similarities between the emission behavior in 4H- and 6H-SiC polytypes, we observed prominent differences; e.g., for the thermal stability of the carbon antisite-vacancy pair, which exhibited maximized emissions upon 300 and 900 ° C anneals in 4H- and 6H-SiC, respectively. Moreover, we observed a range of defect emission signatures not previously reported for 6H-SiC in the literature and discussed their potential origin in the context of the thermal stability. For example, among the PL-lines in 6H-SiC, we detected periodically repeatable emission signatures, resembling the so-called L-lines recently reported in 4H-SiC, even though their exact origin has not yet been settled in the literature. Thus, we use color centers comparison in different polytypes to better understand the nature of the single-photon emitters in SiC. [ABSTRACT FROM AUTHOR]

4H Silicon carbide (SiC) is widely recognized as one of the most advanced wide bandgap semiconductors used in the production of high-efficiency power electronic devices. Impurities play a crucial role in achieving the desired electrical properties in 4H-SiC, yet the understanding of impurities in this material remains limited. In this study, first-principles formation-energy calculations were employed to establish a comprehensive database of formation-energy diagrams for impurities in 4H-SiC. This database includes valuable information on site preference, lattice distortion, solubility, and charge transition levels (CTLs) of the impurities. The site preference for each impurity is closely related to factors such as the Fermi energy, chemical potential, and the impurity species itself. To assess the lattice distortion caused by each impurity, a comparison was made between the volume changes before and after doping. Moreover, the solubility of each impurity was determined using the detailed balance theory, thereby enabling a direct measure of the maximum impurity concentration achievable in the material. Based on the CTLs, the impurities in 4H-SiC were classified into four categories: n-type impurities, p-type impurities, amphoteric impurities, and non-electroactive impurities. This comprehensive property database for impurities in 4H-SiC provides valuable insights for tailoring the material properties through controlled doping, thereby ultimately leading to enhanced performance of power electronic devices. [ABSTRACT FROM AUTHOR]

Nanophotonic structures have shown promising routes to controlling and enhancing nonlinear optical processes at the nanoscale. However, most nonlinear nanostructures require a handling substrate, reducing their application scope. Due to the underwhelming heat dissipation, it has been a challenge to evaluate the nonlinear optical properties of free-standing nanostructures. Here, we overcome this challenge by performing shot-controlled fifth harmonic generation (FHG) measurements on a SiC meta-membrane - a free-standing transmission metasurface with pronounced optical resonances in the mid-infrared (λ res ≈ 4,000 nm). Back focal plane imaging of the FHG diffraction orders and rigorous finite-difference time-domain simulations reveal at least two orders of magnitude enhancement of the FHG from the meta-membrane, compared to the unstructured SiC film of the same thickness. Single-shot measurements of the meta-membrane with varying resonance positions reveal an unusual spectral behavior that we explain with Kerr-driven intensity-dependent resonance dynamics. This work paves the way for novel substrate-less nanophotonic architectures.

4H Silicon carbide (4H-SiC) is widely recognized as a highly promising material for high-voltage and high-power electronic applications due to its exceptional properties. The performance of devices based on 4H-SiC is often weakened by the presence of carbon-related point defects, particularly carbon vacancies (VC). The defects of VC introduce deep-level traps (e.g., Z1/2 and EH6/7) that deteriorate device functionality. Experimental and theoretical studies on VC have led to some conflicting results about the charge states of VC, especially for the charge state ordering of EH6/7. We now employ ab initio metadynamics (META) to systematically investigate configuration space including the direction and magnitude of bond distortion and identify the most stable structures of VC. Eventually, the charge states of VC in 4H-SiC are identified. The Z1 (EH6) and Z2 (EH7) indicate transitions from acceptor (donor) levels of VC, located on the h and k sublattice sites, respectively. Z1 and Z2 demonstrate negative-U ordering, characterized by U values of −0.16 and −0.37 eV, respectively. Conversely, EH6 and EH7 display positive-U ordering, with U values of 0.16 and 0.08 eV, respectively. The current results provide insights into the properties of VC in 4H-SiC, highlighting the effectiveness of META in the exploration of complex potential energy surfaces associated with point defects in solids. [ABSTRACT FROM AUTHOR]

Based on the transport and polarization relaxation theories, the effects of hydrogen, fluorine, and chlorine atom passivation on the conductivity and dielectric properties of silicon carbide nanowires (SiCNWs) were numerically simulated. The results show that passivation can decrease the dark conductivity of SiCNWs and increase its ultraviolet photoconductivity. Among them, the photoconductivity of univalent (H) passivated SiCNWs is better than that of seven-valent (Cl, F) passivated SiCNWs. In terms of dielectric properties, the passivated SiCNWs exhibit a strong dielectric response in both deep ultraviolet and microwave regions. Hydrogen passivation SiCNWs produce the strongest dielectric response in deep ultraviolet, while fluorine passivation SiCNWs produce the strongest dielectric relaxation in the microwave band, which indicates that atomic passivation SiCNWs have a wide range of applications in ultraviolet optoelectronic devices and microwave absorption and shielding. [ABSTRACT FROM AUTHOR]