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We present experimental setup for user-oriented high-harmonic source with a description of different focusing and interaction geometries. Infrared rejection system and resulting extreme ultraviolet beam characterization are also described. Beamline is designed to be driven with 100 mJ

International audience; We present experimental results obtained at a user-oriented XUV beamline implemented at the ELI Beamlines facility. The coherent XUV radiation is produced via high harmonic generation in gases in a loose focusing geometry. The heamline is designed to be driven by 1 kHz, 100 mJ, 20 Is pulses centered at a wavelength of 830 nm. Results such as XUV spectra, beam wavefront and pulse energy obtained during the heamline commissioning with a commercial 1 kHz, 5 mJ, 40 fs laser system are presented. A unique XUV spectrometer for source characterization designed to reach a very high sensitivity is described in detail, and we demonstrate a novel technique for single shot and every shot. XUV pulse energy measurement. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.

A High Harmonics Generation Beamline has been designed, delivered, installed and commissioned by ARDOP at ELI Beamlines pillar in Czech Republic, as a turn-key system generating a broadband XUV beam from 5nm to 120nm.

International audience; The 3D-AFM technique is a very well known technique as a non destructive reference to calibrate CD-SEM and Scatterometry metrology. However, recent hardware, tip design and tip treatment improvements have offered to the technique new capabilities that pave the way for multiple applications in the semiconductor industry. The 3D-AFM technique is today not only a calibrating technique but also a process control technique that can be use either at the R&D level or in fab environment. In this paper, we will address the limits of the 3D-AFM technique for the semiconductor industry depending on the applications by focusing our study on tip to sample interactions. We will identify, test and validate potential industrial solutions that could extend the 3D-AFM potentialities. Subsequently, we will show some interesting applications of the technique related to LER/LWR transfer during silicon gate patterning and related to advance multiwires devices fabrication.

Campaigns of laser damage tests at 1w of Nd-YAG laser (1064 nm), 3w and with a combination of these two wavelengths, were conducted to complete previous existing data on damage growth in fused silica output surface. It is known that UV light is very effective in inducing preexisting damage craters to grow. When both wavelengths are present, the effect of 1w beam on damage growth depends on the delay between the IR and the UV beam. When the 1w reaches the sample before the 3w, it has nearly no consequence on growth rate. On the opposite, when the IR beam is delayed and strikes the sample after the 3w pulse, its energy simply adds to the UV in enhancing damage growth. Damage initiation is much more affected by 3w than 1w pulses. However, the number of surface damage craters also increased by the addition of 1w photons to the UV beam.