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A novel lateral power device, termed a p-channel dual-action device (p-ch DAD), is proposed and experimentally demonstrated in action. This device is based on a new dual-action mechanism. The new device has successfully increased on-state current without lowering the device breakdown voltage. The 600-V level-shifting action of the p-ch DAD has been confirmed by a circuit experiment. A newly designed p-ch DAD on the silicon on insulator can be made by adding four additional masks and trench technology to a 0.8-/spl mu/m CMOS process. Moreover, the process we have developed is completely compatible with an existing 5-V 0.8-/spl mu/m CMOS process.

We have demonstrated that the developed process has a breakdown voltage of higher than 600 V with use of thick buried-oxide and thin SOI. From both experiments and simulations, the cylindrical structure in the LIGBTs shows the best performance; it improves the latch-up tolerance without the increase of on-state voltage. Moreover, the process we have developed is completely compatible with an existing 5 V, 0.8 /spl mu/m CMOS process.

A novel lateral power device termed the p-channel dual action device (p-ch DAD) is proposed and demonstrated in action experimentally and numerically. It consists of a p-channel HVMOS, n-channel HVMOS and resistance. This hybrid device has increased on-state current without lowering the device breakdown voltage. The conductivity modulation of the new device is discussed.

A novel lateral power device termed p-channel Dual Action Device (p-ch DAD) is proposed and demonstrated in action experimentally. The new device has successfully increased on-state current without lowering the device breakdown voltage. 600 V level-shifting action of the p-ch DAD has been confirmed by a circuit experiment.

A new p-channel slit type p-drift lateral IGBT (p-ch SD-LIGBT) is described. This device is fabricated with thick buried-oxide SOI, using 0.8 /spl mu/m CMOS process. The improvement of slit type p-drift structure makes it possible to realize excellent characteristics in the trade-off between breakdown voltage and on-state current relationship compared with p-ch conventional SOI-LIGBT. Furthermore, measured characteristics are reported for p-ch SOI-LIGBT with a breakdown voltage of more than 500 V for the first time.