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We observed resonant coherent excitation (RCE) of 1s electron to the n = 2 states in 390 MeV/u Ar 17+ ions passing through thin Si crystals of about 1 μm in the {2 2 0} planar-channeling condition by measuring both the exit charge state and the exit angle of the emerged ions simultaneously in a list mode. The yield of the de-excitation X-rays from the Ar 17+ ions was also measured. The thin crystal is suitable to study trajectory dependent RCE dynamics, because the exit angle of the high energy planar-channeling ion is uniquely related to the ion trajectory. From the de-excitation X-ray yield on resonance, we learned that RCE occurs with a fairly large probability within the traveling length of about 1 μm, and a majority of the excited ions survive from ionization by the collisions with target electrons or nuclei, and de-excite into the ground state by emitting the X-rays. On the other hand, the observed resonance profile of the exit charge state is shallow and broadened by the Stark effect. We found that the ionization of the excited ions takes place when the ions travel close to the atomic plane from the observed relation between the charge state and the exit angle of the emerged ions.

We investigated resonant coherent excitation of H-like Ar17+ and He-like Ar16+ ions planar channeled in a Si crystal under the V-type and ladder-type double resonance conditions. In both cases, we observed distinct enhancement in the ionized fraction of the transmitted ions when the double resonance conditions were satis.ed. In the ladder-type configuration, the enhancement indicates that the doubly-excited 2p2 state of He-like Ar16+was produced through doubly-resonant coherent excitation.

X-rays emitted from Ar 17+ , Fe 24+ and Kr 35+ ions of about 400 MeV/u transmitting through a thin Si crystal of about 20 μm thickness have been measured in a planar channeling condition and compared with those in a random incident condition. We have found that the X-ray yield from Ar 17+ ions is larger for the channeling condition than for the random incidence, while those from Fe 24+ and Kr 35+ ions are rather smaller. Such tendencies are explained by considering the projectile dependences of excitation and ionization probabilities together with X-ray emission rates. A crude simulation has qualitatively reproduced these experimental results. When the crystal thickness is small, the X-ray yield is smaller in the channeling condition than in the random incident condition, because excitation is depressed. However, for thicker crystals, the X-ray yield is larger, since the survived population of projectile-bound electrons is larger due to small ionization probabilities under the channeling condition. This inversion occurs at a specific crystal thickness depending on projectile species. Whether the thickness of the used crystal is smaller or larger than the inversion thickness determines enhancement or depression of the X-ray yield in the channeling condition.

We have observed resonant coherent excitation (RCE) of H-like ${\mathrm{Ar}}^{17+}$ ions traveling through a $1\text{ }\text{ }\ensuremath{\mu}\mathrm{m}$-thick Si crystal at an energy of $391\text{ }\text{ }\mathrm{MeV}/\mathrm{u}$ in the nonchanneling condition. A three-dimensional periodic array of atomic planes induces RCE of the nonchanneling ions. The high energy heavy ions together with the thin crystal allow us to observe this new RCE through the measurements of the charge-state distribution of the emerging ions. The observed resonances are much narrower than those of planar-channeling ions due to the absence of the large Stark shift caused by the planar potential.