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145 results on '"Sørensen, C.B."'

13. Keratinsygdomme

Author

Jensen, P.K.A., Sørensen, C.B., Andresen, B.S., Brandrup, F., Veien, N., and Buus, S.K. m.fl.

Published
2000

18. Current-voltage characteristics of quantum-point contacts in the closed-channel regime: Transforming the bias voltage into an energy scale

Author

Gloos, K., Utko, P., Aagesen, M., Sørensen, C.B., Hansen, Jørn Bindslev, Lindelof, P. E., Gloos, K., Utko, P., Aagesen, M., Sørensen, C.B., Hansen, Jørn Bindslev, and Lindelof, P. E.

Abstract

We investigate the I(V) characteristics (current versus bias voltage) of side-gated quantum-point contacts, defined in GaAs/AlxGa1-xAs heterostructures. These point contacts are operated in the closed-channel regime, that is, at fixed gate voltages below zero-bias pinch-off for conductance. Our analysis is based on a single scaling factor, extracted from the experimental I(V) characteristics. For both polarities, this scaling factor transforms the change of bias voltage into a change of electron energy. The latter is determined with respect to the top of the potential barrier of the contact. Such a built-in energy-voltage calibration allows us to distinguish between the different contributions to the electron transport across the pinched-off contact due to thermal activation or quantum tunneling. The first involves the height of the barrier, and the latter also its length. In the model that we are using the channel length remains the only adjustable parameter since the barrier height can be experimentally determined. For short (similar to 0.06 mu m) contacts, the I(V)-derived lengths agree rather well with those estimated from the geometrical layout, whereas nominally long (similar to 1.2 mu m) contacts are typically found to consist of very short (similar to 0.2 mu m) barriers. We have mapped the height of the barrier as a function of the gate voltage, and found that its behavior differs strongly from that extrapolated using conventional bias spectroscopy in the open-channel regime above conductance pinch-off.

Published
2006

21. Mesoscopic decoherence in Aharonov-Bohm rings

Author

Hansen, A.E., Kristensen, A., Pedersen, S., Sørensen, C.B., Lindelof, P.E., Hansen, A.E., Kristensen, A., Pedersen, S., Sørensen, C.B., and Lindelof, P.E.

Published
2001

23. Observation of quantum asymmetry in an Aharonov-Bohr ring

Author

Pedersen, Simon Vind Daugaard, Hansen, Adam Espe, Kristensen, Anders, Sørensen, C.B., Lindelof, P.E., Pedersen, Simon Vind Daugaard, Hansen, Adam Espe, Kristensen, Anders, Sørensen, C.B., and Lindelof, P.E.

Published
2000

26. Silicon quantum point contact with aluminum gate

Author

Prunnila, M., Eranen, S., Ahopelto, J., Manninen, A., Kamp, M., Emmerling, M., Forchel, A., Kristensen, Anders, Sørensen, C.B., Lindelof, P.E., Gustafsson, A., Prunnila, M., Eranen, S., Ahopelto, J., Manninen, A., Kamp, M., Emmerling, M., Forchel, A., Kristensen, Anders, Sørensen, C.B., Lindelof, P.E., and Gustafsson, A.

Published
2000

27. Photon-assisted Andreev transport and sub-gap structures

Author

Wildt, M., Kutchinsky, J., Taboryski, Rafael Jozef, Sørensen, C.B., Hansen, J.B., Lindelof, P.E., Wildt, M., Kutchinsky, J., Taboryski, Rafael Jozef, Sørensen, C.B., Hansen, J.B., and Lindelof, P.E.

Published
2000

29. Bias and temperature dependence of the 0.7 conductance anomaly in quantum point contacts

Author

Kristensen, Anders, Bruus, H., Hansen, Adam Espe, Jensen, Jesper Bo Damm, Lindelof, P.E., Marckmann, C.J., Nygård, Jesper, Sørensen, C.B., Beuscher, F., Forchel, A., Michel, M.C., Kristensen, Anders, Bruus, H., Hansen, Adam Espe, Jensen, Jesper Bo Damm, Lindelof, P.E., Marckmann, C.J., Nygård, Jesper, Sørensen, C.B., Beuscher, F., Forchel, A., and Michel, M.C.

Published
2000

36. Weak localization in AlGaAs/GaAs p-type quantum wells

Author

Pedersen, S., Sørensen, C.B., Kristensen, A., Lindelof, P.E., Golub, L.E., Averkiev, N.S., Pedersen, S., Sørensen, C.B., Kristensen, A., Lindelof, P.E., Golub, L.E., and Averkiev, N.S.

Published
1999

38. Multiple Andreev reflections in diffusive SNS structures

Author

Taboryski, Rafael Jozef, Kutchinsky, J., Hansen, J.B., Wildt, M., Sørensen, C.B., Lindelof, P.E., Taboryski, Rafael Jozef, Kutchinsky, J., Hansen, J.B., Wildt, M., Sørensen, C.B., and Lindelof, P.E.

Published
1999

45. Spin splitting and weak localization in (110) GaAs/AlGaAs quantum wells

Author

Hassenkam, T., Pedersen, S., Baklanov, Konstantine, Kristensen, A., Sørensen, C.B., Lindelof, P.E., Pikus, F.G., Pikus, G.E., Hassenkam, T., Pedersen, S., Baklanov, Konstantine, Kristensen, A., Sørensen, C.B., Lindelof, P.E., Pikus, F.G., and Pikus, G.E.

Published
1997

50. High mobility inverted GaAs/AlGaAs HEMTs

Author

Sørensen, C.B., Lindelof, P.E., Taboryski, Rafael Jozef, Kristensen, A., Sørensen, C.B., Lindelof, P.E., Taboryski, Rafael Jozef, and Kristensen, A.

Published
1993

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