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1. Liquid‐Metal Fabrication of Ultrathin Gallium Oxynitride Layers with Tunable Stoichiometry

Author

Panteha Pedram, Ali Zavabeti, Nitu Syed, Amine Slassi, Chung Kim Nguyen, Benjamin Fornacciari, Anne Lamirand, Jules Galipaud, Arrigo Calzolari, Régis Orobtchouk, Andreas Boes, Torben Daeneke, Sébastien Cueff, Arnan Mitchell, and Christelle Monat

Subjects
2D materials, gallium nitride, gallium oxide, liquid metal chemistry, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467
Abstract

The synthesis of nanometer‐thick (≈3 nm) gallium oxynitride (GaOxNy) layers with a variable stoichiometry is reported. The approach primarily exploits the liquid metal chemistry (LMC) technique and promises easier integration of 2D materials onto photonic devices compared to traditional top‐down and bottom‐up methods. The fabrication follows a two‐step process, involving first liquid metal‐based printing of a nanometer‐thick layer of gallium oxide (Ga2O3), followed a plasma‐enhanced nitridation reaction. Control over nitridation parameters (plasma power, exposure time) allows adjustment of the GaOxNy layer's composition, granting access to compounds with distinct optical properties (e.g., a 20% index variation), as demonstrated by ellipsometry and density functional theory (DFT) simulations. DFT provides a microscopic understanding of the effect of the bond polarization and crystallinity on the optical properties of GaOxNy compounds. These findings expand the knowledge of ultrathin GaOxNy alloys, which are poorly studied with respect to their gallium nitride (GaN) and Ga2O3 counterparts. They also represent an essential step toward integrating such 2D materials into photonic chips and offer new opportunities to improve the performance of hybrid optoelectronic devices.

Published
2024
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2. VO2 nanophotonics

Author

Sébastien Cueff, Jimmy John, Zhen Zhang, Jorge Parra, Jianing Sun, Régis Orobtchouk, Shriram Ramanathan, and Pablo Sanchis

Subjects
Applied optics. Photonics, TA1501-1820
Abstract

The intriguing physics of vanadium dioxide (VO2) makes it not only a fascinating object of study for fundamental research on solid-state physics but also an attractive means to actively modify the properties of integrated devices. In particular, the exceptionally large complex refractive index variation produced by the insulator-to-metal transition of this material opens up interesting opportunities to dynamically tune optical systems. This Perspective reviews some of the exciting work done on VO2 for nanophotonics in the last decade and suggests promising directions to explore for this burgeoning field.

Published
2020
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3. EUROPULS: NEUROmorphic energy-efficient secure accelerators based on Phase change materials aUgmented siLicon photonicS.

Author

Fabio Pavanello, Cédric Marchand 0002, Ian O'Connor, Régis Orobtchouk, Fabien Mandorlo, Xavier Letartre, Sébastien Cueff, Elena Ioana Vatajelu, Giorgio Di Natale, Benoit Cluzel, Aurelien Coillet, Benoît Charbonnier, Pierre Noe, Frantisek Kavan, Martin Zoldak, Michal Szaj, Peter Bienstman, Thomas Van Vaerenbergh, Ulrich Rührmair, Paulo F. Flores, Luís Guerra e Silva, Ricardo Chaves, Luís Miguel Silveira, Mariano Ceccato, Dimitris Gizopoulos, George Papadimitriou 0001, Vasileios Karakostas, Axel Brando, Francisco J. Cazorla, Ramon Canal, Pau Closas, Adria Gusi-Amigo, Paolo Crovetti, Alessio Carpegna, Tzamn Melendez Carmona, Stefano Di Carlo, and Alessandro Savino

Published
2023
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5. Integration of functional oxides on SOI for agile silicon photonics.

Author

Pedro Rojo-Romeo, X. Hu, Sébastien Cueff, B. Wague, Régis Orobtchouk, Bertrand Vilquin, Romain Bachelet, G. Grenet, Catherine Dubourdieu, Philippe Regreny, Guillaume Saint-Girons, Pau Castera, Ana M. Gutiérrez, Nuria Sanchez, Todora Ivanova Angelova, Pablo Sanchis, Stefan Abel, and Jean Fompeyrine

Published
2015
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6. Tunable optical anisotropy in epitaxial phase-change VO2 thin films

Author

Jimmy John, Amine Slassi, Jianing Sun, Yifei Sun, Romain Bachelet, José Pénuelas, Guillaume Saint-Girons, Régis Orobtchouk, Shriram Ramanathan, Arrigo Calzolari, and Sébastien Cueff

Subjects
Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Biotechnology
Abstract

We theoretically and experimentally demonstrate a strong and tunable optical anisotropy in epitaxially-grown VO2 thin films. Using a combination of temperature-dependent X-ray diffraction, spectroscopic ellipsometry measurements and first-principle calculations, we reveal that these VO2 thin films present an ultra-large birefringence (Δn > 0.9). Furthermore, leveraging the insulator-to-metal transition of VO2, we demonstrate a dynamic reconfiguration of optical properties from birefringent to hyperbolic, which are two distinctive regimes of anisotropy. Such a naturally birefringent and dynamically switchable platform paves the way for multi-functional devices exploiting tunable anisotropy and hyperbolic dispersion.

Published
2022

7. Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performance.

Author

Pablo Sanchis, L. Sánchez, Pau Castera, Alvaro Rosa, Ana M. Gutiérrez, Antoine Brimont, Guillaume Saint-Girons, Régis Orobtchouk, Sébastien Cueff, Pedro Rojo-Romeo, Romain Bachelet, Philippe Regreny, Bertrand Vilquin, Catherine Dubourdieu, Xavier Letartre, G. Grenet, José Penuelas, X. Hu, L. Louahadj, Jean-Pierre Locquet, L. Zimmermann, Chiara Marchiori, Stefan Abel, Jean Fompeyrine, and A. Hakansson

Published
2014
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10. Analytical non-Hermitian description of Photonic Crystals with arbitrary Lateral and Transverse symmetry

Author

Xavier Letartre, Serge Mazauric, Sébastien Cueff, Taha Benyattou, Hai Son Nguyen, Pierre Viktorovitch, and xavier, letartre

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, FOS: Physical sciences, Physics::Optics, Optics (physics.optics), Physics - Optics
Abstract

In this work we propose a general theoretical approach to the modelling of complex dispersion characteristics of leaky optical modes operating in photonic crystal slab composed of two high-index contrast gratings, beyond the protection of the light cone. Opening access of wave-guided resonances to free space continuum provides large amount of extra degrees of freedom for mode coupling engineering. Not only can the two gratings communicate via near field coupling, but they are also allowed to couple via the propagating radiated field. Our analytical model, based on a non-Hermitian Hamiltonian, including both coupling schemes, allows for a unified description of the wide family of optical modes which may be generated within uni-dimensional photonic crystal. Through a variety of illustrative examples, we show that our theoretical approach provide a simplified categorization of these modes, but it is also a powerful enabler for the discovery of novel photonic species. Finally, as proof-of-concept, we demonstrate experimentally the formation of a Dirac point at the merging of three bound states in the continuum that is the most achieved photonic specie discussed in this work., 34 pages, 23 figures

Published
2022

11. Light Emitting Si‐Based Mie Resonators: Toward a Huygens Source of Quantum Emitters

Author

Mario Khoury, Hugo Quard, Tobias Herzig, Jan Meijer, Sébastien Pezzagna, Sébastien Cueff, Marco Abbarchi, Hai Son Nguyen, Nicolas Chauvin, Thomas Wood, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Ingénierie et conversion de lumière (i-Lum) (INL - I-Lum), Universität Leipzig, ANR-15-CE24-0027,ULYSSES,Émetteurs de lumière quantique et classique en silicium: Impuretés et défauts complexes pour la nanophotonique(2015), ANR-18-CE47-0013,OCTOPUS,Qubits de spin adressables optiquement dans le silicium 28(2018), and European Project: 828890,NARCISO

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], telecom frequency, G-centers, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, light emitters in silicon, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Mie resonators, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
Abstract

International audience; Silicon-based micro- and nano-structures for light management at near-infrared and visible frequencies have been widely exploited for guided optics and metasurfaces. However, light emission with this material has been hampered by the indirect character of its bandgap. Here it is shown that, via ion beam implantation, light emitting G-centers can be directly embedded within Si-based Mie resonators previously obtained by solid state dewetting. Size- and position-dependent, directional light emission at 120 K is demonstrated experimentally and confirmed by finite difference time domain simulations. It is estimated that, with an optimal coupling of the G-centers emission with the resonant antennas, a collection efficiency of about 90% can be reached using a conventional objective lens. The integration of these telecom-frequency emitters in resonant antennas is relevant for their efficient exploitation in quantum optics applications and more generally to Si-based photonic metasurfaces.

Published
2022
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13. Infrared and visible micro-emitters made by lift-off processing in pulsed laser deposited layers

Author

Alban Gassenq, Etienne Cleyet-Merle, Yannick Guyot, Hai-Son Nguyen, Sébastien Cueff, and Antonio Pereira

Abstract

Micro-structuration of rare earth doped materials by liftoff processing in pulsed laser deposited layers are promising in photonics since they do not require etching. In this work, we present our recent progress in the fabrication and characterization of such structures for visible and infrared emission. Different kinds of devices have been investigated (micro-disks, micro-strips, grating and so one), with different host materials (Y2O3 and Al2O3) and dopant (Eu3+ and Er3+ ions). We show here that the shape and the material of the microstructures can be chosen to control the light for different wavelength ranges. This work opens the way of the easy realization of efficient micro-emitter for photonics applications.

Published
2022

14. Ultimate Phase Sensitivity in Surface Plasmon Resonance Sensors by Tuning Critical Coupling with Phase Change Materials

Author

Cécile Jamois, Xavier Letartre, Sébastien Cueff, Taha Benyattou, Lotfi Berguiga, Lydie Ferrier, Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Ingénierie et conversion de lumière (i-Lum) (INL - I-Lum), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Cueff, Sébastien

Subjects
Surface (mathematics), Materials science, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, FOS: Physical sciences, Applied Physics (physics.app-ph), 02 engineering and technology, 01 natural sciences, 010309 optics, Phase change, Optics, Phase (matter), 0103 physical sciences, Sensitivity (control systems), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business.industry, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, 3. Good health, 13. Climate action, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, business, Optics (physics.optics), Physics - Optics
Abstract

Plasmonic sensing is an established technology for real-time biomedical diagnostics and air-quality monitoring. While intensity and wavelength tracking are the most commonly used interrogation methods for Surface Plasmon Resonance (SPR), several works indicate the potential superiority of phase interrogation in detection sensitivity. Here, we theoretically and numerically establish the link between ultra-high sensitivities in phase interrogation SPR sensors and the critical coupling condition. However, reaching this condition requires a technically infeasible angstrom-level precision in the metal layer thickness. We propose a robust solution to overcome this limitation by coupling the SPR with a phase-change material (PCM) thin film. By exploiting the multilevel reconfigurable phase states of PCM, we theoretically demonstrate ultra-high phase sensitivities with a limit of detection as low as $10^{-10}$ refractive index unit (RIU). Such a PCM-assisted SPR sensor platform paves the way for unprecedented sensitivity sensors for the detection of trace amounts of low molecular weight species in biomedical sensing and environmental monitoring., 10 pages, 7 figures

Published
2021

15. Exploration of the optical behavior of phase-change materials integrated in silicon photonics platforms

Author

Ian O'Connor, Sébastien Cueff, Sébastien Le Beux, Fabio Pavanello, Clement Zrounba, INL - Conception de Systèmes Hétérogènes (INL - CSH), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), and INL - Ingénierie et conversion de lumière (i-Lum) (INL - I-Lum)

Subjects
Phase transition, Materials science, Silicon photonics, business.industry, Scattering, Attenuation, Electrical element, Amorphous solid, Neuromorphic engineering, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Joule heating, ComputingMilieux_MISCELLANEOUS
Abstract

Silicon photonics is rapidly emerging as a viable and robust technology for a large range of applications thanks to its high versatility and to its CMOS-compatibility. Nonetheless, there is a strong interest in achieving monolithic integration of novel materials to provide additional functionalities. In particular, phase change materials (PCMs) have started to receive considerable attention due to their unique optical and electrical properties. PCMs such as Ge 2 Sb 2 Te 5 (GST) exhibit a large optical index contrast between their amorphous and crystalline phases [1] . Phase transitions in these materials can be initiated by locally increasing the temperature either optically (light absorption) or electrically (Joule heating), with response times potentially below the ns range [1] . These characteristics have already been exploited in multiple applications such as circuit elements for neuromorphic architectures and multi-level optical memories, where PCMs are deposited as thin-film patches over integrated waveguides [2] – [4] .

Published
2021

16. Tunable Mie-Resonant Dielectric Metasurfaces Based on VO 2 Phase-Transition Materials

Author

Shriram Ramanathan, Aditya Tripathi, Regis Orobtchouk, Yuri S. Kivshar, Lotfi Berguiga, Sébastien Cueff, Pedro Rojo Romeo, Zhen Zhang, Sergey Kruk, Jimmy John, Hai Son Nguyen, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), ANR, ANR-16-CE24-0004,SNAPSHOT,Nano-couches minces commutables pour la photonique sur silicium : vers de nouveaux composants optoélectroniques ultra-efficaces(2016), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Phase transition, Materials science, vanadium dioxide, Holography, Physics::Optics, phase-change materials, 02 engineering and technology, Dielectric, 01 natural sciences, near-infrared, law.invention, spectral modulation, [SPI.MAT]Engineering Sciences [physics]/Materials, 010309 optics, Condensed Matter::Materials Science, Vanadium dioxide, law, 0103 physical sciences, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum optics, business.industry, Near-infrared spectroscopy, 021001 nanoscience & nanotechnology, metasurfaces, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, tunable nanophotonics, Photonics, 0210 nano-technology, business, Biotechnology
Abstract

International audience; Dielectric metasurfaces have become efficient tools for creating ultrathin optical components with various functionalities for imaging, holography, quantum optics, and topological photonics. While static all-dielectric resonant metaphotonics is reaching maturity, challenges remain in the design and fabrication of efficient reconfigurable and tunable metasurface structures. A promising pathway toward tunable metasurfaces is by incorporating phase-transition materials into the photonic structure design. Here we demonstrate Mie-resonant silicon-based metasurfaces tunable via the insulator-to-metal transition of a thin VO2 layer with reversible properties at telecom wavelengths. We experimentally demonstrate two regimes of functional tunability driven by the VO2 transition: (i) 2 orders of magnitude modulation of the metasurface transmission, (ii) spectral tuning of near-perfect absorption. Both functionalities are accompanied by a hysteresis-like behavior that can be exploited for versatile memory effects. Beyond this demonstration of multifunctional properties, this work provides a general framework to efficiently use the full complex refractive index tuning of VO2, for both its refractive index modulation and optical absorption tuning. Tunable dielectric metasurfaces may find their applications in various photonics technologies including optical communications, information storage, imaging, detectors, and sensors.

Published
2021

17. Sensitive RHEED signature of Ti-excess enabling enhanced cationic composition control during the molecular beam epitaxy of SrTiO 3 based solid solutions

Author

Romain Bachelet, Claude Botella, Guillaume Saint-Girons, Marc d'Esperonnat, Sébastien Cueff, Masoumeh Razaghi Pey Ghaleh, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Thin layers, Reflection high-energy electron diffraction, business.industry, Oxide, Context (language use), 02 engineering and technology, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Evaporation (deposition), chemistry.chemical_compound, Electron diffraction, chemistry, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, General Materials Science, 0210 nano-technology, business, Molecular beam epitaxy, Perovskite (structure)
Abstract

International audience; Molecular beam epitaxy (MBE) is the best suited technique to engineer perovskite oxide properties, thanks to individual atom evaporation from elemental sources. Unfortunately, significant source drift often prevents exploiting this advantage, and improving the control of the composition of MBE grown oxide thin layers remains a challenge. In this context, in-situ reflection high energy electron diffraction (RHEED) has been for long identified as a useful tool, as surface reconstructions and RHEED oscillations depend on oxide cationic composition. We show here that monitoring the appearance of half-order streaks along the [210] RHEED azimuths of Ti-rich surfaces provides enhanced control of the cationic composition of SrTiO3 thin layers as compared to the more common strategy relying on [100] azimuths monitoring. We also provide quantitative evaluation of the uncertainty on composition control enabled by this method, namely +/-6.7%. In the end, we describe an original procedure to control the composition of perovskite oxide quaternary solid solutions.

Published
2021

18. VO2 nanophotonics

Author

Pablo Sanchis, Jimmy John, Regis Orobtchouk, Shriram Ramanathan, Jorge O. Parra, Sébastien Cueff, Jianing Sun, Zhen Zhang, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and ANR-16-CE24-0004,SNAPSHOT,Nano-couches minces commutables pour la photonique sur silicium : vers de nouveaux composants optoélectroniques ultra-efficaces(2016)

Subjects
lcsh:Applied optics. Photonics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Phase-change materials PCM, Computer Networks and Communications, lcsh:TA1501-1820, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Atomic and Molecular Physics, and Optics, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, 0210 nano-technology, Nanophotonics and nano-optics
Abstract

International audience; The intriguing physics of vanadium dioxide (VO2) makes it not only a fascinating object of study for fundamental research on solid-state physics but also an attractive means to actively modify the properties of integrated devices. In particular, the exceptionally large complex refractive index variation produced by the insulator-to-metal transition of this material opens up interesting opportunities to dynamically tune optical systems. This Perspective reviews some of the exciting work done on VO2 for nanophotonics in the last decade and suggests promising directions to explore for this burgeoning field.

Published
2020

19. Hybrid chip-based nonlinear optical devices using graphene

Author

Christelle Monat, Pierre Demongodin, Jérémy Lhuillier, Milan Sinobad, Houssein El Dirani, Crochemore, R., Corrado Sciancalepore, Thomas Wood, Malik Kemiche, Radoslav Mazurczyk, Philippe Regreny, Pedro Rojo Romeo, Bertrand Vilquin, Xavier Letartre, Ségolène Callard, Sébastien Cueff, Christian Grillet, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), grillet, christian, GRAphene nonlinear PHotonic Integrated CircuitS - GRAPHICS - - H20202015-09-01 - 2020-09-01 - 648546 - VALID, and Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Abstract

International audience; The recent development of silicon photonics, namely based on Si and Si derivative materials (e.g. Si3N4), has enabled the integration of a wide range of optical devices onto the same chip. However, due the intrinsic limitations of silicon, some devices cannot be efficiently integrated in silicon monolithic architectures. III-V/ Si wafer bonding and LiNBO3 thin film technologies have already provided a path to increase the functionalities that can be heterogeneously integrated onto silicon chips, now turned hybrid [1]. Two-dimensional materials represent another promising route to complement the properties of silicon and create compact hybrid architectures with novel functionalities. The most mature of these 2D materials, graphene, has attracted lots of attention as it exhibits attractive nonlinear optical properties, such as a large photo-refractive Kerr index, and saturable absorption, which might be interesting for nonlinear photonic chips and all-optical information processing. While its intrinsic properties are relatively high for a monolayer-thick material, the use of integrated optics provides a way to enhance the otherwise low absolute response of this 2D material. Besides, the capability of tuning graphene optical properties provides an additional advantage to realize on-demand and reconfigurable nonlinear photonic devices. I will here discuss some of these developments, including our recent demonstration of hybrid graphene/ Si3N4 waveguides for chip-based saturable absorbers [2]. Our work also shows that hybrid graphene coated waveguides provide a relevant platform to unravel the dynamics of graphene nonlinear optical properties. Finally, some limitations of graphene nonlinear properties lead us to explore, with our Australian collaborators, alternative 2D materials such as graphene oxide [3], which might represents an interesting trade-off in terms of linear absorption and nonlinearity.

Published
2020

20. Towards active photonic dispersion control using graphene-induced non-radiative loss

Author

Geneviève Grenet, Malik Kemiche, Thomas Wood, Jérémy Lhuillier, Sébastien Cueff, Christelle Monat, Xavier Letartre, Pierre Demongodin, Bertrand Vilquin, Pedro Rojo-Romeo, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and INL - Matériaux Fonctionnels et Nanostructures (INL - MFN)

Subjects
Materials science, business.industry, Graphene, Oxide, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Spatial modulation, law.invention, 010309 optics, chemistry.chemical_compound, chemistry, law, 0103 physical sciences, Dispersion (optics), Radiative transfer, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Photonics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Absorption (electromagnetic radiation), business
Abstract

International audience; We show that the photonic dispersion of a two coupled-mode system can be actively tuned using graphene-induced non-radiative loss. Our implementation exploits the spatial modulation of graphene's absorption via patterned oxide substrates.

Published
2020

21. Tunable Mie-resonant dielectric metasurfaces based on VO2 phase-change materials

Author

Lotfi Berguiga, Shriram Ramanathan, Jimmy John, Hai Son Nguyen, Yuri S. Kivshar, Sergey Kruk, Pedro Rojo Romeo, Zhen Zhang, Sébastien Cueff, Regis Orobtchouk, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and ANR-16-CE24-0004,SNAPSHOT,Nano-couches minces commutables pour la photonique sur silicium : vers de nouveaux composants optoélectroniques ultra-efficaces(2016)

Subjects
0303 health sciences, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Silicon, Physics::Instrumentation and Detectors, business.industry, Physics::Optics, chemistry.chemical_element, 02 engineering and technology, Dielectric, Chemical vapor deposition, 021001 nanoscience & nanotechnology, Amplitude modulation, Split-ring resonator, 03 medical and health sciences, Reflection (mathematics), chemistry, Modulation, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Order of magnitude, 030304 developmental biology
Abstract

International audience; We demonstrate Mie-resonant silicon metasurfaces tunable via the insulator-to-metal transition of a deposited VO2 layer. We observe two orders of magnitude modulation depth of the metasurface reflection with reversible properties and a hysteresis-like behavior. OCIS codes: (160.4236) Nanomaterials; (310.6628) Subwavelength structures, nanostructures; (220.4241) Nanostructure fabrication 1. Introduction Metasurfaces have emerged as a flexible and efficient platform for manipulating electromagnetic waves. Although there has been a considerable progress in the development of plasmonic metasurfaces, some of their functionalities remain compromised by Ohmic losses and heating. More recent developments suggest an alternative way towards highly efficient metasurfaces based on Mie-resonant nanostructures made of high-index dielectric materials [1]. While static all-dielectric resonant metaphotonics is reaching maturity, big challenges remain in the design and fabrication of efficient reconfigurable and tunable structures [2] that are highly desirable for a number of applications in optical communications, information storage, imaging, detectors, and sensors. A promising pathway towards tunable metasurfaces is an incorporation of phase-change materials into the design. While substantial efforts have been made towards tunable nanophotonic devices made of metallic nanostructures coupled to various phase-change materials such as GeSbTe, VO2, etc. [2-4], all-dielectric tunable nanostructures remain largely unexplored. In particular, VO2 is an attractive phase-change material [5] and its tunability occurs at temperatures close to ambient (~68°C). The transition can be triggered thermally, optically, or electrically. Furthermore, the dynamical change of phase corresponds to a crystalline-to-crystalline transition and therefore not accompanied by catastrophic volume change, void creation, etc, enabling a hybrid integration of this material into complex nanostructures. Therefore, VO2 is compatible with materials and/or technologies that cannot support thigh temperatures and high energy pulses needed to switch back and forth other phase-change materials such as GST. Nanofabrication of VO2 remains largely premature, and its hybrid integration with dielectric nanophotonics imposes significant challenges.

Published
2020

22. Multipolar Resonances with Designer Tunability Using VO2 Phase-Change Materials

Author

Yael Gutiérrez, Sébastien Cueff, Zhen Zhang, Regis Orobtchouk, Jimmy John, Helmut Karl, Fernando Moreno, Shriram Ramanathan, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and ANR-16-CE24-0004,SNAPSHOT,Nano-couches minces commutables pour la photonique sur silicium : vers de nouveaux composants optoélectroniques ultra-efficaces(2016)

Subjects
Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Condensed matter physics, Phase-change materials PCM, Mie scattering, General Physics and Astronomy, Metamaterial, Physics::Optics, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, Phase change, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Nanocrystal, Metamaterials, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Figure of merit, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, 0210 nano-technology, Nanophotonics and nano-optics, Refractive index, Plasmon
Abstract

Subwavelength nanoparticles can support electromagnetic resonances with distinct features depending on their size, shape, and nature. For example, electric and magnetic Mie resonances occur in dielectric particles, while plasmonic resonances appear in metals. Here, we experimentally demonstrate that the multipolar resonances hosted by ${\mathrm{VO}}_{2}$ nanocrystals can be dynamically tuned and switched thanks to the insulator-to-metal transition of ${\mathrm{VO}}_{2}$. Using both Mie theory and Maxwell-Garnett effective-medium theory, we retrieve the complex refractive index of the effective medium composed of a slab of ${\mathrm{VO}}_{2}$ nanospheres embedded in ${\mathrm{Si}\mathrm{O}}_{2}$ and show that such a resulting metamaterial presents distinct optical tunability compared to unpatterned ${\mathrm{VO}}_{2}$. We further show that this approach provides a new degree of freedom to design low-loss phase-change metamaterials with record large figure of merit ($\mathrm{\ensuremath{\Delta}}n/\mathrm{\ensuremath{\Delta}}k$) and designer optical tunability.

Published
2020

23. Functional oxide based epitaxial metamaterials in the NIR-MIR

Author

Guillaume Saint-Girons, Sébastien Cueff, Romain Bachelet, Mohamed Elhachmi Bouras, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Saint-Girons, Guillaume

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

24. Vanadium Oxide Based Waveguide Modulator Integrated on Silicon

Author

Pedro Rojo-Romeo, Bertrand Vilquin, Zhen Zhang, Shriram Ramanathan, Jimmy John, Sébastien Cueff, Regis Orobtchouk, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Purdue University [West Lafayette], and ANR-16-CE24-0004,SNAPSHOT,Nano-couches minces commutables pour la photonique sur silicium : vers de nouveaux composants optoélectroniques ultra-efficaces(2016)

Subjects
Silicon photonics, Materials science, Silicon, business.industry, Transmission loss, Physics::Optics, chemistry.chemical_element, law.invention, Semiconductor, chemistry, law, Modulation, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Light emission, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Refractive index, Waveguide
Abstract

International audience; Silicon photonics is now a mature field of research with efficient passive building blocks such as waveguides, routers and modulators. Silicon, as a material though, is not the best material for light emission and electro-optical modulation functionalities. To circumvent those limitations, researchers integrate heterogeneous materials such as for example III-V semiconductors, rare-earth-doped oxides and ferroelectric oxides on silicon. In this communication, we present a simple and innovative straight waveguide modulator design based on the phase change properties of Vanadium dioxide (VO2). VO2 is a strongly correlated material with unique insulator-to-metal transition (IMT) property. This IMT is accompanied by a structural modification as well as an extremely large modulation of the refractive index in the near-infrared range. We leverage this strong optical tunability in hybrid Silicon/VO2 waveguides for optical modulation. Specifically, by spatially separating the modulator from the bus waveguide, we both exploit the changes in refractive index and extinction coefficients to maximize modulation as well as minimize transmission loss. We will show how our design enable compact and efficient devices that can be readily integrated on standard Silicon photonics platform. We further discuss on the latest experimental results, expected performances compared to the state-of-the-art and future devices. We acknowledge funding from the French National Research Agency (ANR) under the project SNAPSHOT (ANR-16-CE24-0004)

Published
2019

25. Tailoring the Local Density of Optical States and Directionality of Light Emission by Symmetry Breaking

Author

Rashid Zia, Matthew Shao Ran Huang, Hai Son Nguyen, Xavier Letartre, Florian Dubois, Pierre Viktorovitch, Sébastien Cueff, Dongfang Li, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), School of Engineering (Brown Engineering), Brown University, ANR-16-CE24-0004,SNAPSHOT,Nano-couches minces commutables pour la photonique sur silicium : vers de nouveaux composants optoélectroniques ultra-efficaces(2016), and ANR-15-CE24-0026,PICSEL,VCSELs pour la photonique intégrée compatible CMOS(2015)

Subjects
Physics, Photoluminescence, Condensed matter physics, business.industry, Physics::Optics, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Atomic and Molecular Physics, and Optics, 0103 physical sciences, Dispersion (optics), [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Light emission, Symmetry breaking, Stimulated emission, Electrical and Electronic Engineering, Photonics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, 0210 nano-technology, business, Order of magnitude, ComputingMilieux_MISCELLANEOUS, Photonic crystal
Abstract

We present a method to simultaneously engineer the energy-momentum dispersion and the local density of optical states (LDOS). Using vertical symmetry breaking in high-contrast gratings, we enable the mixing of modes with different parities, thus producing hybridized modes with controlled dispersion. By tuning geometric parameters, we control the coupling between Bloch modes, leading to flatband, M- and W-shaped dispersion as well as Dirac dispersion. This dispersion-engineering leads to tailored LDOS and we experimentally demonstrate a two order of magnitude enhancement of photoluminescence from weak emitters—defects in silicon—via optical modes with adjustable angle of emission. This vertical symmetry-breaking method could readily be used in various photonic crystals and metasurfaces devices and opens up a new way to strongly boost light emission on-chip and to steer it to arbitrary directions.

Published
2019

26. Optimizing the shape of InAs/InP quantum dot-nanowires grown by MBE on silicon for efficient light sources emitting in the telecom band

Author

Ali Jaffal, Philippe Regreny, Walid Redjem, Hai Son Nguyen, Sébastien Cueff, Xavier Letartre, Gilles Patriarche, Emmanuel Rousseau, Guillaume Cassabois, Michel Gendry, Nicolas Chauvin, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2019

27. Perovskite oxide based hyperbolic epitaxial superlattices grown by oxide molecular beam epitaxy

Author

Mohamed Bouras, Dong Han, Sébastien Cueff, Romain Bachelet, Guillaume Saint-Girons, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), and Saint-Girons, Guillaume

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

28. Probing Electro-Magnetic Local Density of Optical States with Mixed ED-MD Emitters

Author

Dongfang Li, Sinan Karaveli, Sébastien Cueff, Wenhao Li, Rashid Zia, School of Engineering (Brown Engineering), Brown University, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], 13. Climate action, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, 01 natural sciences, 010305 fluids & plasmas
Abstract

International audience; We experimentally demonstrated that the lifetime of quantum emitters with strongly mixed electric dipole (ED) and magnetic dipole (MD) transitions can directly probe the combined electromagnetic local density of optical states. OCIS codes: (250.0250) Optoelectronics; (260.2510) Fluorescence; (260.3160) Interference. Purcell effect shows the spontaneous decay rate of a quantum emitter depends on its local density of optical states (LDOS), which indicates that the spontaneous decay rate can be selectively enhanced or suppressed by properly engineering its local optical environment. As demonstrated in Drexhage's pioneering experiments, the electric LDOS oscillates as a function of the separation distance between the emitter and metal-dielectric interface (red line in Fig. 1(a)), thus leading to the measurable oscillations of corresponding lifetimes (red line in Fig. 1(b)). The lifetime oscillations refer to the enhancement and suppression of spontaneous decay rate of light emitters at varied locations. In the literature, the fitting to the oscillations has been employed to infer quantum efficiency of light emitters. However, these oscillations are not a fundamental nature of electromagnetic mode density. The measured electric LDOS using the common purely ED or ED-dominant emitters is only the projection of the combined electromagnetic LDOS onto an isotropic electric dipole (Fig. 1(a)). In the past decade, the magnetic light matter interaction has drawn great attention thanks to the advance of metamaterials. In addition to those magnetic resonators (e.g., split-ring resonators and parallel nanorods), strong MD transitions exist as well in transition-metal and lanthanide ions [1]. In order to probe the combined electromagnetic LDOS, strongly mixed ED-MD emitters are required to access to electric and magnetic LDOS simultaneously. Here we experimentally investigated the lifetimes of two strongly mixed ED-MD emitters: divalent nickel ions in magnesium oxide (Ni 2+ :MgO) and trivalent erbium ions in yttrium oxide (Er 3+ :Y 2 O 3) [2]. Staircaselike samples with 44 distinct regions (i.e., with varied spacer thicknesses d and/or top interfaces) were fabricated for the two quantum emitters, respectively. Time-dependent photoluminence was then measured for all distinct areas of the samples to extract the corresponding lifetimes. The measured lifetime of the mixed ED-MD emitter does not solely depend on electric or magnetic LDOS, but rather follows the combined electromagnetic LDOS. Almost no lifetime oscillations was observed in the measured lifetimes of 3 T 2 → 3 A 2 transitions in Ni 2+ :MgO, as shown in Fig. 1(c) (black dots). This is further confirmed by a technologically and scientifically important emitter Er 3+ :Y 2 O 3. Of great interest, the complex electronic levels of Er 3+ make it support both purely ED transitions (4 S 3/2 → 4 I 15/2) at visible regime and strongly mixed ED-MD transitions (4 I 13/2 → 4 I 15/2) at telecom wavelengths [3]. The measured lifetime of strongly mixed ED-MD transitions 4 I 13/2 → 4 I 15/2 in Er 3+ :Y 2 O 3 at telecom wavelengths follows the combined electromagnetic LDOS. In contrast, the measured lifetime of the purely ED transitions at visible regime (4 S 3/2 → 4 I 15/2) originating from the same Er 3+ emitters solely depends on the electric LDOS. The extracted MD contributions from the theoretical fitting of measured lifetimes match the results obtained by the recently developed energy-momentum spectroscopy [3,4]. The findings here show that, for emitters with strongly mixed ED-MD transitions as well as characterized quantum efficiency and bulk lifetime, a single lifetime measurement can probe the combined electromagnetic LDOS at the point of interest in a complex optical system, such as metamaterials, epsilon-near-zero materials, and topological photonics.

Published
2019

29. (La,Sr)TiO3/SrTiO3 superlattices as hyperbolic metamaterials

Author

Mohamed Bouras, Dong Han, Sébastien Cueff, Romain Bachelet, Guillaume Saint-Girons, Saint-Girons, Guillaume, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and INL - Nanophotonique (INL - Photonique)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Abstract

International audience

Published
2019

30. InAs/InP quantum dot-nanowire single photon sources in the telecom band grown monolithically on silicon substrates

Author

Ali Jaffal, Walid Redjem, Philippe Regreny, Hai-Son Nguyen, Sébastien Cueff, Xavier Letartre, Gilles Patriarche, Emmanuel Rousseau, Guillaume Cassabois, Michel Gendry, Nicolas Chauvin, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2018

31. Reconfigurable Flat Optics with Programmable Reflection Amplitude Using Lithography‐Free Phase‐Change Material Ultra‐Thin Films (Advanced Optical Materials 2/2021)

Author

Arnaud Taute, Julien Lumeau, Xavier Letartre, Stephane Monfray, Qinghua Song, Sébastien Cueff, Antoine Bourgade, Brice Devif, Patrice Genevet, and Lotfi Berguiga

Subjects
Optics, Amplitude, Materials science, business.industry, Optical materials, Reflection (physics), Thin film, business, Lithography, Phase-change material, Atomic and Molecular Physics, and Optics, Light modulation, Electronic, Optical and Magnetic Materials
Published
2021

32. Efficient Optimization of High‐Quality Epitaxial Lithium Niobate Thin Films by Chemical Beam Vapor Deposition: Impact of Cationic Stoichiometry

Author

Anna L. Pellegrino, Estelle Wagner, Francesca Lo Presti, William Maudez, Simon Kolb, Rashmi Rani, Antoine Bernard, Stephan Guy, Alban Gassenq, Marina Raevskaia, Christian Grillet, Rahma Moalla, Claude Botella, Romain Bachelet, Bruno Masenelli, Jean‐Marie Bluet, Sebastien Cueff, Patrick Chapon, Giacomo Benvenuti, and Graziella Malandrino

Subjects
chemical beam epitaxy, combinatorial, epitaxial films, lithium niobate, optical properties, structural properties, Physics, QC1-999, Technology
Abstract

Abstract Lithium niobate is a material of special interest for its challenging functional properties, which can suit various applications. However, high quality 200‐mm LixNb1‐xO3 thin film grown on sapphire substrate have never been reported so far which limits these potential applications. This paper reports the efficient optimization of high quality LiNbO3 thin film deposition on sapphire (001) substrate through chemical beam vapor deposition in a combinatorial configuration. With this technique, flow ratio of Li/Nb can be tuned from ≈0.25 to ≈2.45 on a single wafer. Various complementary characterizations (by means of diffraction, microscopy and spectroscopy techniques) have been performed at different areas of the film (different cationic ratios) in order to investigate the impact of the cationic stoichiometry deviation on the film properties. Close to cationic stoichiometry (LiNbO3), the epitaxial films are of high quality (single phase in spite of two in‐plane domains, low mosaicity of 0.04°, low surface roughness, refractive index and band gap close to bulk values). Deviating from the stoichiometry conditions, secondary phases are detected (LiNb3O8 for Nb‐rich flow ratios, and Li3NbO4 with partial amorphization for Li‐rich flow ratios). LiNbO3 films are of high interest for various key applications in data communications among others.

Published
2023
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33. Probing the Combined Electromagnetic Local Density of Optical States with Quantum Emitters Supporting Strong Electric and Magnetic Transitions

Author

Wenhao Li, Dongfang Li, Sébastien Cueff, Sinan Karaveli, Rashid Zia, Cueff, Sébastien, School of Engineering (Brown Engineering), Brown University, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Electromagnetic field, Materials science, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, Oxide, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Condensed Matter::Materials Science, chemistry.chemical_compound, 0103 physical sciences, 010306 general physics, Quantum, ComputingMilieux_MISCELLANEOUS, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, Isotropy, Yttrium, 021001 nanoscience & nanotechnology, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Dipole, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Electric dipole transition, Atomic physics, 0210 nano-technology, Magnetic dipole
Abstract

We experimentally demonstrate that the radiative decay rate of a quantum emitter is determined by the combined electric and magnetic local density of optical states (LDOS). A Drexhage-style experiment was performed for two distinct quantum emitters, divalent nickel ions in magnesium oxide and trivalent erbium ions in yttrium oxide, which both support nearly equal mixtures of isotropic electric dipole and magnetic dipole transitions. The disappearance of lifetime oscillations as a function of emitter-interface separation distance confirms that the electromagnetic LDOS refers to the total mode density, and thus similar to thermal emission, these unique electronic emitters effectively excite all polarizations and orientations of the electromagnetic field.

Published
2018

34. Publisher Correction: Large anisotropy of ferroelectric and pyroelectric properties in heteroepitaxial oxide layers

Author

Guillaume Saint-Girons, Bertrand Vilquin, Nicolas Baboux, Jose Penuelas, Sébastien Cueff, Romain Bachelet, and R. Moalla

Subjects
Multidisciplinary, Materials science, Condensed matter physics, lcsh:R, Oxide, lcsh:Medicine, Publisher Correction, Ferroelectricity, Pyroelectricity, chemistry.chemical_compound, chemistry, ComputingMethodologies_DOCUMENTANDTEXTPROCESSING, lcsh:Q, lcsh:Science, Anisotropy
Abstract

A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has been fixed in the paper.

Published
2018

35. Engineering the properties of functional oxides and integrating them on Si and GaAs thanks to molecular beam epitaxy

Author

Guillaume Saint-Girons, Mohamed Bouras, Sébastien Cueff, Romain Bachelet, Dong Han, Jose Penuelas, Geneviève Grenet, Philippe Regreny, Nicolas Chauvin, Ludovic Largeau, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), INL - Spectroscopies et Nanomatériaux (INL - S&N), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), and Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

36. Engineering the properties of functional oxides and integrating them on Si and GaAs thanks to molecular beam epitaxy

Author

Mohamed Bouras, Sébastien Cueff, Laurent Pedesseau, Jacky Even, Romain Bachelet, Han, D., Jose Penuelas, Grenet Geneviève, Philippe Regreny, Nicolas Chauvin, Ludovic Largeau, Guillaume Saint-Girons, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), INL - Spectroscopies et Nanomatériaux (INL - S&N), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

37. Large anisotropy of ferroelectric and pyroelectric properties in heteroepitaxial oxide layers

Author

Rahma Moalla, Sébastien Cueff, Guillaume Saint-Girons, Bertrand Vilquin, Romain Bachelet, Nicolas Baboux, Jose Penuelas, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and INL - Dispositifs Electroniques (INL - DE)

Subjects
Multidisciplinary, Materials science, Condensed matter physics, lcsh:R, lcsh:Medicine, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Polarization (waves), 01 natural sciences, Ferroelectricity, Thermal expansion, Mosaicity, Article, Pyroelectricity, Lattice constant, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], lcsh:Q, lcsh:Science, 010306 general physics, 0210 nano-technology, Anisotropy, ComputingMilieux_MISCELLANEOUS
Abstract

Epitaxial PbZr0.52Ti0.48O3 (PZT) layers were integrated on Si(001) with single PZT {001} orientation, mosaïcity below 1° and a majority of a-oriented ferroelectric domains (∼65%). Ferroelectric and pyroelectric properties are determined along both the out-of-plane and in-plane directions through parallel-plate capacitor and coplanar interdigital capacitor along the PZT direction. A large anisotropy in these properties is observed. The in-plane remnant polarization (21.5 µC.cm−2) is almost twice larger than that measured along the out-of-plane direction (13.5 µC.cm−2), in agreement with the domain orientation. Oppositely, the in-plane pyroelectric coefficient (−285 µC.m−2.K−1) is much lower than that measured out-of-plane (−480 µC.m−2.K−1). The pyroelectric anisotropy is explicated in term of degree of structural freedom with temperature. In particular, the low in-plane pyroelectric coefficient is explained by a two-dimensional clamping of the layers on the substrate which induces tensile stress (from thermal expansion), competing with the decreasing tetragonality of a-domains (shortening of the polar c-axis lattice parameter). Temperature-dependent XRD measurements have revealed an increased fraction of a-domains with temperature, attesting the occurrence of a partial two-dimensional clamping. These observed properties are of critical importance for integrated pyroelectric devices.

Published
2018

38. Symmetry Breaking in Photonic Crystals: On-Demand Dispersion from Flatband to Dirac Cones

Author

Thierry Deschamps, Hai Son Nguyen, Pierre Viktorovitch, Christian Seassal, Florian Dubois, Jean-Louis Leclercq, Sébastien Cueff, Antonin Pardon, Xavier Letartre, Biologie et physiologie des états septiques, IFR114-Université de Lille, Droit et Santé, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'électromagnétisme Microondes et optoélectronique (LEMO ), and Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, Local density of states, Condensed matter physics, business.industry, Dirac (software), FOS: Physical sciences, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Symmetry (physics), Planar, Quantum mechanics, 0103 physical sciences, Dispersion (optics), [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Symmetry breaking, Photonics, 010306 general physics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Optics (physics.optics), Physics - Optics, Photonic crystal
Abstract

We demonstrate that symmetry breaking opens a new degree of freedom to tailor energy-momentum dispersion in photonic crystals. Using a general theoretical framework in two illustrative practical structures, we show that breaking symmetry enables an on-demand tuning of the local density of states of the same photonic band from zero (Dirac cone dispersion) to infinity (flatband dispersion), as well as any constant density over an adjustable spectral range. As a proof of concept, we demonstrate experimentally the transformation of the very same photonic band from a conventional quadratic shape to a Dirac dispersion, a flatband dispersion, and a multivalley one. This transition is achieved by finely tuning the vertical symmetry breaking of the photonic structures. Our results provide an unprecedented degree of freedom for optical dispersion engineering in planar integrated photonic devices.

Published
2018

39. Perovskite oxide engineering using molecular beam epitaxy

Author

Mohamed Bouras, Mihai Apreutesei, Nicolas Baboux, Sébastien Cueff, Debord, R., Nicolas Chauvin, Pailhes, S., Romain Bachelet, Guillaume Saint-Girons, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Dispositifs Electroniques (INL - DE), INL - Nanophotonique (INL - Photonique), Institut Lumière Matière [Villeurbanne] (ILM), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, INL - Spectroscopies et Nanomatériaux (INL - S&N), and Saint-Girons, Guillaume

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

40. Towards controlling the optical properties of InAs/InP quantum dot- nanowires using a hybrid amorphous silicon/III-V semiconductor photonic structure

Author

Ali Jaffal, Sébastien Cueff, Philippe Regreny, Michel Gendry, Nicolas Chauvin, Inl, Laboratoire INL UMR5270, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), and INL - Nanophotonique (INL - Photonique)

Subjects
[PHYS]Physics [physics], [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS] Physics [physics]
Abstract

October 15-18, 2017; International audience; no abstract

Published
2017

41. Towards high-speed electro-optical performance in a hybrid BaTiO3/Si Mach-Zehnder modulator

Author

Pablo Sanchis, Pedro Rojo Romeo, P. Castéra, Sébastien Cueff, A. M. Gutierrez, Regis Orobtchouk, Guillaume Saint-Girons, Alvaro Rosa, and Domenico Tulli

Subjects
Materials science, Silicon, business.industry, Impedance matching, Electro-optic modulator, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Modulation bandwidth, 020210 optoelectronics & photonics, chemistry, Electrode, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Radio frequency, 0210 nano-technology, business
Abstract

A Mach-Zehnder modulator based on a hybrid BaTiO 3 /silicon optical waveguide has been designed to achieve a high modulation bandwidth with a simulated V π L below 1V·cm and RF impedance matching. The device has been fabricated and characterized in the DC regime.

Published
2016

42. Hybrid silicon-ferroelectric oxide platform for tunable nanophotonics on silicon

Author

Amadeu Griol, Sébastien Cueff, Regis Orobtchouk, Bertrand Vilquin, T. Angelova, Pablo Sanchis, Philippe Regreny, P. Castéra, P. Rojo Romeo, Guillaume Saint-Girons, Baba Wague, Alvaro Rosa, A. M. Gutierrez, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Universitat Politècnica de València (UPV), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Silicon photonics, Materials science, Fabrication, Silicon, Hybrid silicon laser, business.industry, Nanophotonics, chemistry.chemical_element, Silicon on insulator, 02 engineering and technology, 021001 nanoscience & nanotechnology, Waveguide (optics), Monocrystalline silicon, 020210 optoelectronics & photonics, chemistry, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

In this communication, we present strategies to implement novel or enhanced optoelectronic functionalities on silicon via the monolithic integration of functional oxides as active layers for nanophotonic devices. We focus on the use of ferroelectric oxides with naturally strong electro-optical coefficients such as BaTiO 3 (BTO) on SOI for the realization of electro-optical modulators around 1.55 µm. Specifically, we present methods to monolithically integrate monocrystalline BTO on silicon and to design devices that leverage their strong Pockels coefficient for efficient and fast electro-optical modulation. We show preliminary results on the fabrication, process and characterization of a slotted BTO waveguide platform. We further discuss on first electro-optical modulation results and how to improve the current optoelectronic platform. In particular, we will explain the potential origins of optical losses in such systems and how to avoid them.

Published
2016

43. Electro-Optical Modulation Based on Pockels Effect in BaTiO3 With a Multi-Domain Structure

Author

Pedro Rojo Romeo, Pablo Sanchis, Guillaume Saint-Girons, Regis Orobtchouk, P. Castéra, Sébastien Cueff, A. M. Gutierrez, Domenico Tulli, Nanophotonics Technology Center, Universitat Politècnica de València (UPV), DAS Photonics (DAS Photonics), DAS Photonics, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Hétéroepitaxie et Nanostructures (INL - H&N), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Ferroelectrics, Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, Modulators, Rotation, Waveguide (optics), [SPI]Engineering Sciences [physics], 020210 optoelectronics & photonics, Optics, TEORIA DE LA SEÑAL Y COMUNICACIONES, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrooptical devices, business.industry, Optical polarization, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Pockels effect, Electronic, Optical and Magnetic Materials, Electrooptical waveguides, Electrooptic modulators, Optical modulator, chemistry, Modulation, Optical variables control, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Optical refraction, Waveguide modulator, 0210 nano-technology, business, Voltage
Abstract

[EN] The influence of an in-plane multi-domain structure in BaTiO3 films grown on SrTiO3/Si buffers for highly efficient electro-optic modulation has been analyzed. The modulation performance can be significantly enhanced by rotating a certain angle, the optical waveguide, with respect to the BaTiO3 crystallographic axes. A robust electro-optical performance against variations in the domain structure as well as the lowest V-pi voltage can be achieved by using the rotation angles between 35 degrees and 55 degrees. Our calculations show that Vp voltages below 1.7 V for a modulation length of 2 mm can be obtained by means of a CMOS compatible hybrid silicon/BaTiO3 waveguide structure., This work was supported by the European Commission under Grant FP7-ICT-2013-11-619456 SITOGA. The work of P. Sanchis was supported in part by GVA under Grant PROMETEOII/2014/034 and in part by the Ministerio de Economia y Competitividad under Grant TEC2012-38540 LEOMIS.

Published
2016

44. Low-Loss and Compact Silicon Rib Waveguide Bends

Author

Pablo Sanchis, Pedro Rojo Romeo, Amadeu Griol, Sébastien Cueff, Regis Orobtchouk, Andrea Zanzi, Antoine Brimont, Xuan Hu, Guillaume Saint Girons, Nanophotonics Technology Center, Universitat Politècnica de València (UPV), INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)

Subjects
Materials science, Silicon, Rib waveguides, Bend radius, Silicon photonics, Physics::Optics, chemistry.chemical_element, 02 engineering and technology, Waveguide (optics), 020210 optoelectronics & photonics, Optics, TEORIA DE LA SEÑAL Y COMUNICACIONES, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, Leakage (electronics), Coupling, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Optical design, Integrated optics, Radius, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Waveguide bends, chemistry, Slab, Physics::Accelerator Physics, business
Abstract

[EN] Waveguide bends support intrinsically leaky propagation modes due to unavoidable radiation losses. It is known that the losses of deep-etched/strip waveguide bends increase inevitably for decreasing radius. Here, we theoretically and experimentally demonstrate that this result is not directly applicable to shallow-etched/rib waveguide bends. Indeed, we show that the total losses caused by the bends reach a local minimum value for a certain range of compact radii and rib waveguide dimensions. Specifically, we predicted the minimum intrinsic losses < 0.1 dB/90 degrees turn within the range of 25-30 mu m bend radii in a 220 nm-thick and 400 nm-wide silicon rib waveguide with 70 nm etching depth. This unexpected outcome, confirmed by experimental evidence, is due to the opposite evolution of radiation (bending) losses and losses caused by the coupling to lateral slab modes (slab leakage) as a function of the bend radius, hence creating an optimum loss region. This result may have important implications for the design of compact and low-loss silicon nanophotonic devices., This work was supported in part by the European STREP Program under Grant FP7-ICT-2013-11-619456-SITOGA and Grant FP7-ICT-2012-10-318240 PhoxTroT and in part by LEOMIS under Grant TEC2012-38540. (Corresponding author: Regis Orobtchouk.)

Published
2016
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45. Ferroelectric oxide slot waveguide electro-optic modulator on Silicon

Author

Sébastien Cueff, Régis Orobtchouk, Pedro Rojo-Romeo, Gutierrez, A., Castéra, P., Rosa, A., Baba Wague, Xuan Hu, Romain Bachelet, Philippe Regreny, Bertrand Vilquin, Sanchis, P., Guillaume Saint-Girons, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Emissions, Dépôts, Impacts (EDI), Laboratoire d'aérologie (LAERO), Centre National de la Recherche Scientifique (CNRS)-Observatoire Midi-Pyrénées (OMP), Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Observatoire Midi-Pyrénées (OMP), Université Fédérale Toulouse Midi-Pyrénées, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Observatoire Midi-Pyrénées (OMP), Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Centre National de la Recherche Scientifique (CNRS), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Toulouse (UT)-Université de Toulouse (UT)-Observatoire Midi-Pyrénées (OMP), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Météo-France -Institut de Recherche pour le Développement (IRD)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Météo-France -Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)-Université de Toulouse (UT)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Météo-France -Institut de Recherche pour le Développement (IRD)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Météo-France -Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

13-18 february 2016; International audience; no abstract

Published
2016

46. Silicon-rich oxynitride hosts for 1.5μm Er3+ emission fabricated by reactive and standard RF magnetron sputtering

Author

Olivier Jambois, B. Garrido, Richard Rizk, Paolo Pellegrino, Sébastien Cueff, Christophe Labbé, Cédric Frilay, and Larysa Khomenkova

Subjects
Photoluminescence, Argon, Materials science, Silicon, Mechanical Engineering, Analytical chemistry, chemistry.chemical_element, Sputter deposition, Condensed Matter Physics, Erbium, chemistry, Mechanics of Materials, Sputtering, General Materials Science, Silicon oxide, Luminescence
Abstract

This study compares the erbium emission from different Si-rich silicon oxynitrides matrices fabricated by magnetron sputtering. The Er-doped layers were grown by two different sputtering configurations: (i) standard co-sputtering of three confocal targets (Er 2 O 3 , Si 3 N 4 and SiO 2 ) under Ar plasma, and (ii) reactive co-sputtering under Ar + N 2 plasma of either three (Er 2 O 3 , pure Si and SiO 2 ) or two targets (Er 2 O 3 and pure Si). The last reactive configuration was found to offer the best Er 3+ PL intensity at 1.5 μm. This highest PL intensity was found comparable to the corresponding emission from Er-doped silicon-rich silicon oxide.

Published
2012

47. Nature and Role of Various Si-Based Sensitizers for Er3+ Ions in Silicon-Rich Silicon Oxide Thin Films

Author

Christophe Labbé, Richard Rizk, Benjamin Dierre, Takashi Sekiguchi, Sébastien Cueff, and Kentaro Watanabe

Subjects
Materials science, Photoluminescence, Silicon, business.industry, General Engineering, Nanocrystalline silicon, chemistry.chemical_element, Cathodoluminescence, Ion, chemistry, Optoelectronics, Thin film, Silicon oxide, business, Luminescence
Abstract

This study focus on the nature of different Si-based sensitizers for Er3+ions in Silicon- Rich Silicon oxide thin films. The samples were first analyzed by Cathodoluminescence technique to probe all emitting centers in the films. Some of these centers were found to be potential sensitizers for Er3+ions, such as Silicon Oxygen Deficient Center and Non-Bridging Oxygen Hole Center, in addition to the well-known Silicon-nanoclusters (Si-nc). The influence of the thickness was subsequently examined, revealing that the formation of Si-nc is inhibited for films thinner than 100 nm and this led to less sensitization of the Er3+ions. We demonstrate that the introduction of a SiO2buffer layer can overcome this issue and increase the luminescence of Er3+ions by a factor of five for films thinner than 50 nm that are usually used for electrically-driven photonic devices.

Published
2011

48. Integration of functional oxides on SOI for agile silicon photonics

Author

Regis Orobtchouk, Pablo Sanchis, Philippe Regreny, Geneviève Grenet, A. M. Gutierrez, N. Sanchez, Romain Bachelet, Jean Fompeyrine, B. Vilqui, P. Rojo Romeo, P. Castéra, Baba Wague, Sébastien Cueff, Xuan Hu, Catherine Dubourdieu, Stefan Abel, Guillaume Saint-Girons, T. Angelova, Max-Planck-Institut für Sonnensystemforschung (MPS), Max-Planck-Gesellschaft, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Laboratoire d'Etude du Rayonnement et de la Matière en Astrophysique (LERMA), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut national des sciences de l'Univers (INSU - CNRS)-Observatoire de Paris, Université Paris sciences et lettres (PSL)-Université de Cergy Pontoise (UCP), Université Paris-Seine-Université Paris-Seine-Centre National de la Recherche Scientifique (CNRS), Système membranaires, photobiologie, stress et détoxication (SMPSD), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Zuumlrich Research Laboratory, IBM, Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Max-Planck-Institut für Sonnensystemforschung = Max Planck Institute for Solar System Research (MPS), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and École normale supérieure - Paris (ENS-PSL)

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Silicon photonics, Materials science, Silicon, business.industry, Hybrid silicon laser, chemistry.chemical_element, Silicon on insulator, 7. Clean energy, Ferroelectricity, Amorphous solid, Slot-waveguide, chemistry, Hardware_GENERAL, Hardware_INTEGRATEDCIRCUITS, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Photonics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], business, ComputingMilieux_MISCELLANEOUS
Abstract

Photonic devices enabling light modulation and switching are of major importance for modern telecommunication. Silicon-based electro-optic modulators are intensively investigated because of their direct compatibility to CMOS fabrication processes. However, the performances of Si based modulators are intrinsically limited, in terms of data transmission rate and energy consumption. To overcome this limitation, ferroelectric oxides with naturally strong electro-optical coefficients combined to small footprint could be ideal candidates for high-speed modulators. We have designed an integration scheme to implement these materials on SOI photonic platform, for 1.55 µm Datacom systems. Monolithic integration of ferroelectric oxides on SOI via SrTiO 3 templates is presented. The devices are based on a horizontal (crystalline Si / ferroelectric oxide / amorphous Si) slot waveguide configuration.

Published
2015

49. Dynamic control of light emission faster than the lifetime limit using VO2 phase-change

Author

Dongfang Li, Franklin J. Wong, Shriram Ramanathan, You Zhou, Jonathan A. Kurvits, Sébastien Cueff, Rashid Zia, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique Nucléaire et de Hautes Énergies (LPNHE), Centre National de la Recherche Scientifique (CNRS)-Université Paris Diderot - Paris 7 (UPD7)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Pierre et Marie Curie - Paris 6 (UPMC), Institut de Radioprotection et de Sûreté Nucléaire (IRSN/PSN-RES/SCA), Institut de Radioprotection et de Sûreté Nucléaire (IRSN), Institut universitaire des systèmes thermiques industriels (IUSTI), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Department of Physics [Providence], Brown University, School of Engineering (Brown Engineering), Harvard John A. Paulson School of Engineering and Applied Sciences (SEAS), and Harvard University [Cambridge]

Subjects
Materials science, Population, Optical communication, Nanophotonics, General Physics and Astronomy, Physics::Optics, Nanotechnology, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Article, General Biochemistry, Genetics and Molecular Biology, Semiconductor laser theory, [SPI.MAT]Engineering Sciences [physics]/Materials, 010309 optics, [SPI]Engineering Sciences [physics], 0103 physical sciences, Spontaneous emission, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, education, education.field_of_study, Multidisciplinary, business.industry, General Chemistry, 021001 nanoscience & nanotechnology, Modulation, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Light emission, 0210 nano-technology, business, Data transmission
Abstract

Modulation is a cornerstone of optical communication, and as such, governs the overall speed of data transmission. Currently, the two main strategies for modulating light are direct modulation of the excited emitter population (for example, using semiconductor lasers) and external optical modulation (for example, using Mach–Zehnder interferometers or ring resonators). However, recent advances in nanophotonics offer an alternative approach to control spontaneous emission through modifications to the local density of optical states. Here, by leveraging the phase-change of a vanadium dioxide nanolayer, we demonstrate broadband all-optical direct modulation of 1.5 μm emission from trivalent erbium ions more than three orders of magnitude faster than their excited state lifetime. This proof-of-concept demonstration shows how integration with phase-change materials can transform widespread phosphorescent materials into high-speed optical sources that can be integrated in monolithic nanoscale devices for both free-space and on-chip communication., Erbium ions offer a way to integrate light emitters into silicon electronics, but their radiative decay time is too slow for effective light modulation. Here, the authors use phase changes in vanadium dioxide to enable all-optical modulation more than a thousand times faster than the erbium excited-state lifetime.

Published
2015

50. Hybrid silicon-ferroelectric oxide slot waveguide for on-chip optoelectronics

Author

Sébastien Cueff, Regis Orobtchouk, Pedro Rojo-Romeo, Baba Wague, Xuan Hu, Romain Bachelet, Philippe Regreny, Bertrand Vilquin, Guillaume Saint-Girons, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Inl, Laboratoire INL UMR5270, Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL)

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

29 nov - 4 dec 2015; International audience; no abstract

Published
2015

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