Author: "Sébastien Chenot" - Searchworks@Jio Institute Digital Library Search Results

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113 results on '"Sébastien Chenot"'

1. Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces

Author: Qinghua Song, Arthur Baroni, Pin Chieh Wu, Sébastien Chenot, Virginie Brandli, Stéphane Vézian, Benjamin Damilano, Philippe de Mierry, Samira Khadir, Patrick Ferrand, and Patrice Genevet
Subjects: Science
Abstract: Though multiplexing meta-holograms remains an attractive approach for realizing optical encoding, existing methods encode information based on the intensity of the holographic images. Here, the authors report vectorial metasurfaces that decouple and encode intensity and polarization information.
Published: 2021
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2. Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces

Author: Qinghua Song, Arthur Baroni, Rajath Sawant, Peinan Ni, Virginie Brandli, Sébastien Chenot, Stéphane Vézian, Benjamin Damilano, Philippe de Mierry, Samira Khadir, Patrick Ferrand, and Patrice Genevet
Subjects: Science
Abstract: Controlling light with planar elements requires full polarization channels and reconstruction of optical signals. Here, the authors have demonstrated a general method relying on pixelated metasurfaces that enables wavefront shaping with arbitrary output polarization, allowing full utilization of polarization channels.
Published: 2020
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3. Metasurface orbital angular momentum holography

Author: Haoran Ren, Gauthier Briere, Xinyuan Fang, Peinan Ni, Rajath Sawant, Sébastien Héron, Sébastien Chenot, Stéphane Vézian, Benjamin Damilano, Virginie Brändli, Stefan A. Maier, and Patrice Genevet
Subjects: Science
Abstract: Conventional hologram designs lack orbital angular momentum selectivity. Here, the authors design metasurface holograms consisting of GaN nanopillars with discrete spatial frequency distributions allowing the reconstruction of distinctive orbital angular momentumdependent holographic images.
Published: 2019
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4. UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots

Author: Julien Brault, Mohamed Al Khalfioui, Samuel Matta, Thi Huong Ngo, Sébastien Chenot, Mathieu Leroux, Pierre Valvin, and Bernard Gil
Subjects: light emitting diodes, ultra-violet emission, molecular beam epitaxy, AlGaN, quantum dots, internal quantum efficiency, Crystallography, QD901-999
Abstract: AlGaN based light emitting diodes (LEDs) will play a key role for the development of applications in the ultra-violet (UV). In the UVB region (280–320 nm), phototherapy and plant lighting are among the targeted uses. However, UVB LED performances still need to be improved to reach commercial markets. In particular, the design and the fabrication process of the active region are central elements that affect the LED internal quantum efficiency (IQE). We propose the use of nanometer-sized epitaxial islands (i.e., so called quantum dots (QDs)) to enhance the carrier localization and improve the IQE of molecular beam epitaxy (MBE) grown UVB LEDs using sapphire substrates with thin sub-µm AlN templates. Taking advantage of the epitaxial stress, AlGaN QDs with nanometer-sized (≤10 nm) lateral and vertical dimensions have been grown by MBE. The IQE of the QDs has been deduced from temperature dependent and time resolved photoluminescence measurements. Room temperature IQE values around 5 to 10% have been found in the 290–320 nm range. QD-based UVB LEDs were then fabricated and characterized by electrical and electroluminescence measurements. On-wafer measurements showed optical powers up to 0.25 mW with external quantum efficiency (EQE) values around 0.1% in the 305–320 nm range.
Published: 2020
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5. Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues

Author: Marc Portail, Sébastien Chenot, Mahdis Ghorbanzadeh-Bariran, Rami Khazaka, Luan Nguyen, Daniel Alquier, and Jean François Michaud
Subjects: Mechanics of Materials, Mechanical Engineering, General Materials Science, Condensed Matter Physics
Abstract: We present an epitaxy-based approach for designing a 3C-SiC Capacitive Micromachined Ultrasonic Transducer (CMUT). The design requires to consider a 3C-SiC/Si/3C-SiC heterostructure on a Si substrate. This implies to address different growth steps of SiC on Si and Si on SiC. We present some specific growth related issued, namely the control of selectively grown Si on a masked SiC(100) and the further regrowth of 3C-SiC on a Si (110) layer. The final release of the SiC membrane, to define a CMUT, is also addressed using a simple thermal treatment allowing to suppress several technological steps.
Published: 2022

6. Etching of the SiGa x N y Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE

Author: Julien Bosch, Pierre-Marie Coulon, Sébastien Chenot, Marc Portail, Christophe Durand, Maria Tchernycheva, Philip A. Shields, Jesús Zúñiga-Pérez, Blandine Alloing, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), University of Bath [Bath], COMUE Université Côte d'Azur (2015-2019) (COMUE UCA), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
Subjects: General Materials Science, General Chemistry, Condensed Matter Physics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract: International audience
Published: 2022

7. Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

Author: Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher, Yvon Cordier, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Université Côte d'Azur (UCA), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Puissance - IEMN (PUISSANCE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), OMMIC, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), This work was supported by French technology facility network RENATECH and the French National Research Agency (ANR) through the projects ED-GaN (ANR-16-CE24-0026) and the 'Investissements d’Avenir' program GaNeX (ANR-11-LABX-0014)., Renatech Network, CMNF, ANR-16-CE24-0026,ED-GaN,Co-intégration des transistors GaN à enrichissement et à déplétion pour les circuits de communication RF de la prochaine génération(2016), and ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)
Subjects: Inorganic Chemistry, Selective sublimation, [SPI]Engineering Sciences [physics], Local area epitaxy, High electron mobility transistors, Group III-nitrides, Materials Chemistry, Condensed Matter Physics
Abstract: International audience; In the present study, the selective sublimation of the p-GaN cap layer of Al(Ga)N/GaN HEMTs is developed to replace the commonly used dry etching with no risk of damage in the barrier layer in order to fabricate enhanced mode transistors. Thanks to this approach, enhancement-mode transistors are fabricated with a threshold voltage between 0 V and +1.5 V depending on the barrier layer aluminum molar fraction and thickness. Furthermore, we show the benefit of the combination of selective sublimation with the regrowth of AlGaN to reduce access resistance in these transistors which can be co-integrated with depletion-mode devices fabricated in the same process in areas where p-GaN has been totally evaporated.
Published: 2022

8. Photonic integrated structures for room-temperature single-photon emitters in gallium nitride

Author: Max Meunier, Mu Zhao, Zhengzhi Jiang, Sébastien Chenot, Philippe De Mierry, Mathieu Leroux, Olivier Alibart, Weibo Gao, and Jesus Zuniga Perez
Published: 2022

9. Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces

Author: Patrice Genevet, Peinan Ni, Stéphane Vézian, Virginie Brandli, Sébastien Chenot, Benjamin Damilano, Patrick Ferrand, Philippe De Mierry, Arthur Baroni, Rajath Sawant, Samira Khadir, Qinghua Song, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Coherent Optical Microscopy and X-rays (COMiX), Institut FRESNEL (FRESNEL), Aix Marseille Université (AMU)-École Centrale de Marseille (ECM)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)-École Centrale de Marseille (ECM)-Centre National de la Recherche Scientifique (CNRS), European Project: 724881,H2020,3D-BioMat(2017), European Project: 639109,H2020,ERC-2014-STG,FLATLIGHT(2015), Université Nice Sophia Antipolis (... - 2019) (UNS), and Centre National de la Recherche Scientifique (CNRS)-École Centrale de Marseille (ECM)-Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Marseille (ECM)-Aix Marseille Université (AMU)
Subjects: Science, Plane wave, Holography, General Physics and Astronomy, Physics::Optics, Near and far field, 02 engineering and technology, 01 natural sciences, General Biochemistry, Genetics and Molecular Biology, Article, law.invention, 010309 optics, Optics, Engineering, law, 0103 physical sciences, Computer Science::Symbolic Computation, lcsh:Science, Physics, Wavefront, Multidisciplinary, Linear polarization, business.industry, Metamaterial, General Chemistry, 021001 nanoscience & nanotechnology, Polarization (waves), Ptychography, Metamaterials, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, lcsh:Q, 0210 nano-technology, business, Sub-wavelength optics
Abstract: Controlling light properties with diffractive planar elements requires full-polarization channels and accurate reconstruction of optical signal for real applications. Here, we present a general method that enables wavefront shaping with arbitrary output polarization by encoding both phase and polarization information into pixelated metasurfaces. We apply this concept to convert an input plane wave with linear polarization to a holographic image with arbitrary spatial output polarization. A vectorial ptychography technique is introduced for mapping the Jones matrix to monitor the reconstructed metasurface output field and to compute the full polarization properties of the vectorial far field patterns, confirming that pixelated interfaces can deflect vectorial images to desired directions for accurate targeting and wavefront shaping. Multiplexing pixelated deflectors that address different polarizations have been integrated into a shared aperture to display several arbitrary polarized images, leading to promising new applications in vector beam generation, full color display and augmented/virtual reality imaging., Controlling light with planar elements requires full polarization channels and reconstruction of optical signals. Here, the authors have demonstrated a general method relying on pixelated metasurfaces that enables wavefront shaping with arbitrary output polarization, allowing full utilization of polarization channels.
Published: 2020

10. Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Author: Nicolas Defrance, Thi Huong Ngo, Eric Frayssinet, Benjamin Damilano, Flavien Cozette, Rémi Comyn, Stéphane Vézian, Hassan Maher, Julien Brault, Nathalie Labat, F. Lecourt, Yvon Cordier, Sébastien Chenot, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), OMMIC, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), This work was supported by French technology facility network RENATECH and the French National Research Agency (ANR) through the projects ED-GaN (ANR-16-CE24-0026) and the 'Investissements d’Avenir' program GaNeX (ANR-11-LABX-0014)., Renatech Network, ANR-16-CE24-0026,ED-GaN,Co-intégration des transistors GaN à enrichissement et à déplétion pour les circuits de communication RF de la prochaine génération(2016), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), Université Nice Sophia Antipolis (1965 - 2019) (UNS), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), and Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)
Subjects: Fabrication, Materials science, Evaporation, Regrowth, 02 engineering and technology, High-electron-mobility transistor, law.invention, GaN, [SPI.MAT]Engineering Sciences [physics]/Materials, Barrier layer, law, 0202 electrical engineering, electronic engineering, information engineering, Materials Chemistry, Electrical and Electronic Engineering, High electron, HEMT, business.industry, 020208 electrical & electronic engineering, Transistor, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, Selective sublimation, Optoelectronics, Sublimation (phase transition), 0210 nano-technology, business, Layer (electronics)
Abstract: International audience; We report on the fabrication of an enhancement mode p-GaN/AlN/GaN high electron mobility transistor with selective area sublimation under vacuum of the p-GaN cap layer. The GaN evaporation selectivity is demonstrated on the thin 2 nm AlN barrier layer. Furthermore, the regrowth of AlGaN is a major key to increase the maximum drain current in the transistors and enables the co-integration with depletion mode devices.
Published: 2022

11. Subliming GaN into Ordered Nanowire Arrays for Ultraviolet and Visible Nanophotonics

Author: Masaya Notomi, Benjamin Damilano, Sébastien Chenot, Sylvain Sergent, Hideaki Taniyama, Masato Takiguchi, Tai Tsuchizawa, Stéphane Vézian, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
Subjects: Materials science, Fabrication, Nanophotonics, Nanowire, 02 engineering and technology, medicine.disease_cause, 01 natural sciences, 010309 optics, 0103 physical sciences, medicine, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], business.industry, Nanolaser, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Quantum dot, Optoelectronics, Sublimation (phase transition), 0210 nano-technology, business, Ultraviolet, Biotechnology, Molecular beam epitaxy
Abstract: We report on the fabrication of ordered arrays of InGaN/GaN nanowire quantum disks by a top-down selective-area sublimation method. Using a combination of two-dimensional molecular beam epitaxy of ...
Published: 2019

12. Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces

Author: Stéphane Vézian, Patrick Ferrand, Benjamin Damilano, Arthur Baroni, Qinghua Song, Patrice Genevet, Sébastien Chenot, Virginie Brandli, Philippe De Mierry, Samira Khadir, Pin Chieh Wu, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut FRESNEL (FRESNEL), Aix Marseille Université (AMU)-École Centrale de Marseille (ECM)-Centre National de la Recherche Scientifique (CNRS), Coherent Optical Microscopy and X-rays (COMiX), Aix Marseille Université (AMU)-École Centrale de Marseille (ECM)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)-École Centrale de Marseille (ECM)-Centre National de la Recherche Scientifique (CNRS), National Cheng Kung University (NCKU), European Project: 724881,H2020,3D-BioMat(2017), European Project: 639109,H2020,ERC-2014-STG,FLATLIGHT(2015), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Centre National de la Recherche Scientifique (CNRS)-École Centrale de Marseille (ECM)-Aix Marseille Université (AMU), and Centre National de la Recherche Scientifique (CNRS)-École Centrale de Marseille (ECM)-Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Marseille (ECM)-Aix Marseille Université (AMU)
Subjects: 3D optical data storage, Science, Holography, Phase (waves), Optical communication, General Physics and Astronomy, Physics::Optics, 02 engineering and technology, 01 natural sciences, General Biochemistry, Genetics and Molecular Biology, Article, law.invention, 010309 optics, symbols.namesake, Optics, law, 0103 physical sciences, Light beam, Physics, polarization, Multidisciplinary, business.industry, General Chemistry, Decoupling (cosmology), 021001 nanoscience & nanotechnology, Polarization (waves), metasurfaces, Fourier, Fourier transform, Metamaterials, symbols, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, holography, 0210 nano-technology, business
Abstract: Intensity and polarization are two fundamental components of light. Independent control of them is of tremendous interest in many applications. In this paper, we propose a general vectorial encryption method, which enables arbitrary far-field light distribution with the local polarization, including orientations and ellipticities, decoupling intensity from polarization across a broad bandwidth using geometric phase metasurfaces. By revamping the well-known iterative Fourier transform algorithm, we propose “à la carte” design of far-field intensity and polarization distribution with vectorial Fourier metasurfaces. A series of non-conventional vectorial field distribution, mimicking cylindrical vector beams in the sense that they share the same intensity profile but with different polarization distribution and a speckled phase distribution, is demonstrated. Vectorial Fourier optical metasurfaces may enable important applications in the area of complex light beam generation, secure optical data storage, steganography and optical communications., Though multiplexing meta-holograms remains an attractive approach for realizing optical encoding, existing methods encode information based on the intensity of the holographic images. Here, the authors report vectorial metasurfaces that decouple and encode intensity and polarization information.
Published: 2021

13. Printing polarization and phase at the optical diffraction limit: near- and far-field optical encryption

Author: Qinghua Song, Samira Khadir, Stéphane Vézian, Benjamin Damilano, Philippe de Mierry, Sébastien Chenot, Virginie Brandli, Romain Laberdesque, Benoit Wattellier, and Patrice Genevet
Published: 2021

14. Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures

Author: Yvon Cordier, Sébastien Chenot, Benjamin Damilano, Jessica Vives, Thierry Guillet, Maria Vladimirova, Pierre Lefebvre, François Chiaruttini, Benoit Jouault, Christelle Brimont, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), ANR-15-CE30-0020,OBELIX,Vers un liquide quantique d'excitons indirects(2015), and ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)
Subjects: Nanostructure, Materials science, cooling, Exciton, Bioengineering, Gallium nitride, 02 engineering and technology, Trapping, Coulomb-bound but spatially separated electron-hole pairs, Condensed Matter::Materials Science, chemistry.chemical_compound, exciton fluid, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum well, Phase diagram, Boson, Condensed Matter::Quantum Gases, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Condensed Matter::Other, gallium nitride Dipolar excitons, Mechanical Engineering, General Chemistry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Dipole, chemistry, Chemical physics, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, electrostatic traps, gallium nitride, 0210 nano-technology, have a long
Abstract: International audience; Dipolar excitons oﬀer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane conﬁnement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the sample surface. This result is a prerequisite for the electrical control of the exciton densities and ﬂuxes, as well for studies of the complex phase diagram of these dipolar bosons at low temperature.
Published: 2019

15. DUV LEDs based on AlGaN quantum dots

Author: Benjamin Damilano, Pierre Valvin, Thi Huong Ngo, Mohamed Al Khalfioui, Jean-Yves Duboz, Aimeric Courville, Sébastien Chenot, Samuel Matta, Bernard Gil, Jean Massies, Mathieu Leroux, Aly Zaiter, Julien Brault, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Université Côte d’Azur, CNRS, CRHEA, F-06560 Valbonne, France
Subjects: Photoluminescence, Materials science, External Quantum Efficiency, 02 engineering and technology, Electroluminescence, medicine.disease_cause, 7. Clean energy, 01 natural sciences, law.invention, 010309 optics, law, 0103 physical sciences, Quantum Dots, medicine, Deep UV, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], business.industry, LED, Heterojunction, 021001 nanoscience & nanotechnology, Quantum dot, AlGaN, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Quantum efficiency, Molecular Beam Epitaxy, Nitride semiconductors, 0210 nano-technology, business, Ultraviolet, Light-emitting diode, Molecular beam epitaxy
Abstract: International audience; Deep ultraviolet (DUV) light emitting diodes (LED) are expected to be the next generation of UV sources, offering significant advantages such as compactness, low consumption and long lifetimes. Yet, improvements of their performances are still required and the potential of AlyGa1-yN quantum dots as DUV emitters is investigated in this study. Using a stress induced growth mode transition, quantum dots (QD) are spontaneously formed on Al0.7Ga0.3N/AlN heterostructures grown on sapphire substrates by molecular beam epitaxy. By increasing the QD Al composition, a large shift of the QD photoluminescence in the UV range is observed, going from an emission in the near UV for GaN QD down to the UVC region for Al0.4Ga0.6N QD. A similar behavior is observed for electroluminescence (EL) measurements performed on LED structures and an emission ranging from the UVA (320-340 nm) down to the UVC (265-280 nm) has been obtained. The main performances of Al0.7Ga0.3N based QD LED are presented in terms of electrical and optical characteristics. In particular, the emission dependence on the input current density, including the emitted wavelength, the optical power and the external quantum efficiency are shown and discussed.
Published: 2021

16. Bandwidth-unlimited polarization-maintaining metasurfaces

Author: Samira Khadir, Patrice Genevet, Benjamin Damilano, Virginie Brandli, Stéphane Vézian, Qinghua Song, Philippe De Mierry, Sébastien Chenot, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
Subjects: Computer Science::Computer Science and Game Theory, Materials Science, Holography, Nanophotonics, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, Physics::Optics, 02 engineering and technology, 01 natural sciences, law.invention, 010309 optics, Superposition principle, Optics, law, 0103 physical sciences, Broadband, Chromatic scale, Physics::Atomic Physics, Circular polarization, Research Articles, Wavefront, Physics, [PHYS]Physics [physics], Multidisciplinary, business.industry, SciAdv r-articles, 021001 nanoscience & nanotechnology, Polarization (waves), 0210 nano-technology, business, Research Article
Abstract: A general method of designing polarization and angular nondispersive metasurface with unlimited bandwidth is provided., Any arbitrary state of polarization of light beam can be decomposed into a linear superposition of two orthogonal oscillations, each of which has a specific amplitude of the electric field. The dispersive nature of diffractive and refractive optical components generally affects these amplitude responses over a small wavelength range, tumbling the light polarization properties. Although recent works suggest the realization of broadband nanophotonic interfaces that can mitigate frequency dispersion, their usage for arbitrary polarization control remains elusively chromatic. Here, we present a general method to address broadband full-polarization properties of diffracted fields using an original superposition of circular polarization beams transmitted through metasurfaces. The polarization-maintaining metasurfaces are applied for complex broadband wavefront shaping, including beam deflectors and white-light holograms. Eliminating chromatic dispersion and dispersive polarization response of conventional diffractive elements lead to broadband polarization-maintaining devices of interest for applications in polarization imaging, broadband-polarimetry, augmented/virtual reality imaging, full color display, etc.
Published: 2021

17. Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters

Author: Nabil Nahas, Benjamin Damilano, Yvon Cordier, Rémi Comyn, B. Beaumont, Hyonju Chauveau, Jean-Pierre Faurie, Thi Huong Ngo, Sébastien Chenot, Eric Frayssinet, Florian Tendille, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
Subjects: 010302 applied physics, [PHYS]Physics [physics], Materials science, business.industry, Doping, Schottky diode, Cathodoluminescence, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Inorganic Chemistry, Reverse leakage current, 0103 physical sciences, Materials Chemistry, Optoelectronics, Dislocation, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Diode, Leakage (electronics)
Abstract: Electrical properties of vertical Schottky diodes fabricated on GaN regrown on hydride vapor phase epitaxy GaN substrates are investigated. The deposition of Ni frames makes it possible to designate the dislocation locations by cathodoluminescence before the fabrication of diodes. Since the distribution of dislocations is inhomogeneous and arranged into clusters over the GaN substrates, diodes made on either areas free of dislocation-clusters or areas with dislocation-clusters have been studied. Both forward and reverse characteristics of diodes fabricated on GaN with different doping levels and dislocation densities have been investigated. It is shown that the reverse leakage is not sensitive to the presence of dislocation clusters. On the other hand, there is a dispersion of reverse leakage which increases in diodes grown on substrates having larger mean dislocation density. The results also demonstrate that a critical maximum distance of around 100 µm between active defects triggers larger reverse leakage currents.
Published: 2020

18. UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots

Author: Mohamed Al Khalfioui, Sébastien Chenot, Thi Huong Ngo, Samuel Matta, Pierre Valvin, Bernard Gil, Mathieu Leroux, Julien Brault, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), S2QT, Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)
Subjects: Materials science, Photoluminescence, General Chemical Engineering, quantum dots, 02 engineering and technology, Electroluminescence, Epitaxy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, Inorganic Chemistry, external quantum efficiency, law, molecular beam epitaxy, 0103 physical sciences, lcsh:QD901-999, General Materials Science, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, light emitting diodes, 3. Good health, Quantum dot, AlGaN, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Sapphire, Optoelectronics, internal quantum efficiency, Quantum efficiency, lcsh:Crystallography, 0210 nano-technology, business, Light-emitting diode, Molecular beam epitaxy, ultra-violet emission
Abstract: AlGaN based light emitting diodes (LEDs) will play a key role for the development of applications in the ultra-violet (UV). In the UVB region (280&ndash, 320 nm), phototherapy and plant lighting are among the targeted uses. However, UVB LED performances still need to be improved to reach commercial markets. In particular, the design and the fabrication process of the active region are central elements that affect the LED internal quantum efficiency (IQE). We propose the use of nanometer-sized epitaxial islands (i.e., so called quantum dots (QDs)) to enhance the carrier localization and improve the IQE of molecular beam epitaxy (MBE) grown UVB LEDs using sapphire substrates with thin sub-&micro, m AlN templates. Taking advantage of the epitaxial stress, AlGaN QDs with nanometer-sized (&le, 10 nm) lateral and vertical dimensions have been grown by MBE. The IQE of the QDs has been deduced from temperature dependent and time resolved photoluminescence measurements. Room temperature IQE values around 5 to 10% have been found in the 290&ndash, 320 nm range. QD-based UVB LEDs were then fabricated and characterized by electrical and electroluminescence measurements. On-wafer measurements showed optical powers up to 0.25 mW with external quantum efficiency (EQE) values around 0.1% in the 305&ndash, 320 nm range.
Published: 2020

19. Vectorial Hologram Based on Pixelated Metasurface

Author: Patrice Genevet, Arthur Baroni, Patrick Ferrand, Sébastien Chenot, Benjamin Damilano, Virginie Brandli, Peinan Ni, Samira Khadir, Stéphane Vézian, Qinghua Song, Rajath Sawant, Philippe De Mierry, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Coherent Optical Microscopy and X-rays (COMiX), Institut FRESNEL (FRESNEL), Aix Marseille Université (AMU)-École Centrale de Marseille (ECM)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)-École Centrale de Marseille (ECM)-Centre National de la Recherche Scientifique (CNRS), OSA / IEEE, European Project: 724881,H2020,3D-BioMat(2017), European Project: 639109,H2020,ERC-2014-STG,FLATLIGHT(2015), Université Nice Sophia Antipolis (... - 2019) (UNS), and Centre National de la Recherche Scientifique (CNRS)-École Centrale de Marseille (ECM)-Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Marseille (ECM)-Aix Marseille Université (AMU)
Subjects: General method, Physics::Instrumentation and Detectors, Image quality, Holography, Physics::Optics, 02 engineering and technology, 01 natural sciences, Optical imaging, law.invention, 010309 optics, Optics, law, Polarization, 0103 physical sciences, Physics, Pixel, business.industry, Cylindrical vector beam, Holographic optical components, Optical polarization, 021001 nanoscience & nanotechnology, Polarization (waves), Computer Science::Graphics, Encoding, Holographic display, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, business
Abstract: International audience; We report a general method for full-polarization generation based on pixelated metasurface. By encoding the holographic phase profile into such pixels, vectorial holograms are constructed for the application of multidirectional display and cylindrical vector beam (CVB).
Published: 2020

20. Printing polarization and phase at the optical diffraction limit: near- and far-field optical encryption

Author: Benjamin Damilano, Qinghua Song, Romain Laberdesque, Samira Khadir, Stéphane Vézian, Patrice Genevet, Sébastien Chenot, Virginie Brandli, Philippe De Mierry, and Benoit Wattellier
Subjects: Materials science, Optical diffraction, business.industry, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, Near and far field, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, Polarization (waves), 01 natural sciences, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Optical encryption, Optics, Electrical and Electronic Engineering, 0210 nano-technology, business, Biotechnology
Abstract: Securing optical information to avoid counterfeiting and manipulation by unauthorized persons and agencies requires innovation and enhancement of security beyond basic intensity encryption. In this paper, we present a new method for polarization-dependent optical encryption that relies on extremely high-resolution near-field phase encoding at metasurfaces, down to the diffraction limit. Unlike previous intensity or color printing methods, which are detectable by the human eye, analog phase decoding requires specific decryption setup to achieve a higher security level. In this work, quadriwave lateral shearing interferometry is used as a phase decryption method, decrypting binary quick response (QR) phase codes and thus forming phase-contrast images, with phase values as low as 15°. Combining near-field phase imaging and far-field holographic imaging under orthogonal polarization illumination, we enhanced the security level for potential applications in the area of biometric recognition, secure ID cards, secure optical data storage, steganography, and communications.
Published: 2020
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21. Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform

Author: Benjamin Damilano, Blandine Alloing, Laetitia Doyennette, Fabrice Semond, Hassen Souissi, Farsane Tabataba-Vakili, Xavier Checoury, Bruno Gayral, Christelle Brimont, Eric Frayssinet, Jean-Yves Duboz, Philippe Boucaud, Thierry Guillet, Sébastien Chenot, Moustafa El Kurdi, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ANR-17-CE08-0043,MILAGAN,Laser microdisque en (Al,Ga,In)-N injecté électriquement(2017), and Université Nice Sophia Antipolis (... - 2019) (UNS)
Subjects: Materials science, Silicon, chemistry.chemical_element, FOS: Physical sciences, Gallium nitride, 02 engineering and technology, Applied Physics (physics.app-ph), Nitride, Grating, 01 natural sciences, 7. Clean energy, Waveguide (optics), law.invention, 010309 optics, chemistry.chemical_compound, law, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, chemistry, Optoelectronics, Photonics, 0210 nano-technology, business, Lasing threshold
Abstract: Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride-on-silicon platform with gallium nitride (GaN) as the main waveguide layer. The photonic circuits consist of a microdisk and a pulley waveguide, terminated by out-coupling gratings. In this Letter, we measure quality factors up to 3500 under continuous-wave excitation. Lasing is observed from 374 to 399 nm under pulsed excitation, achieving low-threshold energies of 0.14 m J / c m 2 per pulse (threshold peak powers of 35 k W / c m 2 ). A large peak-to-background dynamic of around 200 is observed at the out-coupling grating for small gaps of 50 nm between the disk and the waveguide. These devices operate at the limit of what can be achieved with GaN in terms of operation wavelength.
Published: 2020
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22. Ge doped GaN and Al 0.5 Ga 0.5 N-based tunnel junctions on top of visible and UV light emitting diodes

Author: Benjamin Damilano, V. Fan Arcara, Sébastien Chenot, Stéphane Vézian, K. Ayadi, Jean-Yves Duboz, Guy Feuillet, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE08-0024,DUVET,Diode electroluminescente UltraViolet à Effet Tunnel(2017), and Université Nice Sophia Antipolis (... - 2019) (UNS)
Subjects: 010302 applied physics, Free electron model, [PHYS]Physics [physics], Materials science, business.industry, Doping, General Physics and Astronomy, Optical power, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, Wavelength, law, Electrical resistivity and conductivity, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Light-emitting diode, Diode
Abstract: The use of tunnel junctions (TJs) is a potential solution in blue light-emitting diodes (LEDs) to poor p-contacts, replacing it with another n-contact. TJs are even more advantageous for UV-emitting structures, which suffer from considerably low injection efficiency in high Al concentration UV LEDs. In this article, we report our work on Ge n-doped GaN and AlGaN TJs grown on top of blue and UV LEDs, respectively, by a hybrid growth method. We have achieved state-of-the-art mobility (67 cm2/V s) and resistivity (1.7 × 10−4 Ω cm) at a free electron concentration of 5.5 × 1020 cm−3 in Ge-doped GaN. With an emission wavelength of 436 nm, the GaN TJ slightly increased the optical power of the blue LED. The AlGaN TJs, on the other hand, improved the optical power of the UV LED (304 nm) by at least a factor of 3, suggesting the enhancement of the hole injection efficiency by the use of TJs in UV-emitting structures.
Published: 2019

23. Proton Energy Loss in GaN: Proton Energy Loss in GaN

Author: Jean-Claude Grini, Julie Zucchi, Sébastien Chenot, Maxime Hugues, Jean-Yves Duboz, J Hérault, Eric Frayssinet, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Pôle d'Imagerie Médecine Nucléaire, Centre Antoine-Lacassagne, Université Côte d'Azur, Centre de Lutte contre le Cancer Antoine Lacassagne [Nice] (UNICANCER/CAL), and UNICANCER-Université Côte d'Azur (UCA)-UNICANCER-Université Côte d'Azur (UCA)
Subjects: [PHYS]Physics [physics], Materials science, Nuclear Theory, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Proton energy, 01 natural sciences, 010305 fluids & plasmas, Electronic, Optical and Magnetic Materials, proton GaN, Condensed Matter::Materials Science, 0103 physical sciences, Physics::Accelerator Physics, Atomic physics, Nuclear Experiment, 0210 nano-technology, MESH: proton GaN
Abstract: International audience; We investigate the proton energy loss in GaN in an energy range between 0 and 65 MeV. The energy of protons generated by a cyclotron at about 65 MeV is varied by inserting an energy- absorbing medium of varying thickness. The precise modeling of the GaN Schottky diode response as a function of the absorbing medium thickness allows us to demonstrate that the energy absorption loss in GaN precisely follows the Bethe theory. In addition, we can identify the region of the detector contributing to its response to a proton beam, which is of prime importance for proton detector optimization.
Published: 2021

24. Towards Semiconductor-Based Metasurfaces

Author: Benjamin Damilano, Sébastien Chenot, Peinan Ni, Gauthier Briere, V. Brandii, Sébastien Héron, Masanobu Iwanaga, Stéphane Vézian, Patrice Genevet, and Jean-Yves Duboz
Subjects: Wavefront, Fabrication, Planar, Semiconductor, Scattering, Computer science, business.industry, Fabrication methods, Broadband, New materials, Nanotechnology, business
Abstract: A new class of planar, wavelength-thick optical components exhibiting exceptional optical properties have emerged in recent years[1–3]. These artificial interfaces, known as metasurfaces, rely on the scattering properties of the subwavelength structures patterned at a boundary to mold the wavefront of light in almost any desired manner. Beside numerous experimental demonstrations, only a handful of low cost and fabrication friendly materials are suitable for their practical implementations. To further develop this technology towards dynamic tuning, broadband application and industrial production, new materials and new fabrication methods are required.
Published: 2019

25. (Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition

Author: Sébastien Chenot, Jean-Yves Duboz, Guy Feuillet, Benjamin Damilano, V. Fan Arcara, Aimeric Courville, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE08-0024,DUVET,Diode electroluminescente UltraViolet à Effet Tunnel(2017), and Université Nice Sophia Antipolis (... - 2019) (UNS)
Subjects: Materials science, General Physics and Astronomy, 02 engineering and technology, Chemical vapor deposition, Nitride, Epitaxy, 01 natural sciences, 7. Clean energy, law.invention, law, Tunnel junction, 0103 physical sciences, Metalorganic vapour phase epitaxy, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], business.industry, Wide-bandgap semiconductor, 021001 nanoscience & nanotechnology, lcsh:QC1-999, Optoelectronics, Light emission, 0210 nano-technology, business, lcsh:Physics, Light-emitting diode
Abstract: Tunnel junctions (TJs) are envisaged as potential solutions to improve the electrical injection efficiency of nitride emitters in the visible as well as in the UV range. Indeed TJs would solve the issues related to the poor contact with the top p type nitride layer, replacing it by an n type one. But if metal-organic chemical vapor deposition (MOCVD) is chosen to grow the n side of the TJ on a LED, one faces the problem of a potential re-passivation by hydrogen of the underlying p type layer. We propose a TJ epitaxial process whereby low growth temperatures, high growth rates and the type of carrier gas will minimize hydrogen incorporation in the underlying layers. In this view, n++/p++ GaN TJs with and without an (Ga,In)N intermediate layer are grown by MOCVD at varying temperatures (800°C and 1080°C), using N2 as a carrier gas under a very high growth rate of 2.5μm/h on top of blue (Ga,In)N/GaN LEDs. The LEDs made under N2 carrier gas and lower temperature growth conditions are operational without the need for further thermal activation of the Mg acceptors. The light emission intensity from the top surface of the TJ-LEDs is improved compared to the reference LED without TJ: besides the more efficient carrier injection this is also attributable to the larger photon extraction efficiency because of the rough surface of the low temperature grown n-GaN contact layer of the TJ-LEDs.
Published: 2019

26. Relaxed InGaN engineered substrates with lattice parameter of 3,205A and beyond enabling direct emission at 630nm

Author: Benjamin Damilano, Amélie Dussaigne, Melanie Lagrange, David Sotta, Sébastien Chenot, Eric Guiot, Guillaume Lavaitte, and Olivier Ledoux
Subjects: Materials science, business.industry, Substrate (electronics), Epitaxy, law.invention, Full width at half maximum, Lattice constant, law, Content (measure theory), Optoelectronics, Wafer, Metalorganic vapour phase epitaxy, business, Light-emitting diode
Abstract: Micro displays targeting virtual and augmented reality applications require pixel size in the range of $10\times 10\mu \mathrm{m}$ or below. Having InGaN based LEDs to emit directly over the full red-green-blue (RGB) spectrum would enable a cost effective transfer and integration. Green and red InGaN based LEDs initially suffer from low internal quantum efficiencies (IQE) and external quantum efficiencies (EQE) as compared to blue LEDs. One solution could be to reduce the strain in the overall structure thanks to an InGaN pseudo-substrate. The Smart Cut™technology enables the layer transfer and strain relaxation of patterned InGaN films. Pattern size can extend from $10\mu \mathrm{m}$ up to 1mm. This process is today available on 100mm and is being transferred to 150mm wafers. According to the In content of the donor InGaN layer, the a (in-plane) lattice parameter can be tuned up to 3.219A. Full InGaN LED containing InGaN/InGaN multiple quantum wells structures are grown by metalorganic vapor phase epitaxy (MOVPE) on this engineered substrate with a lattice parameter of 3.205A. Long wavelengths have been reached, up to 630nm with FWHM of 48nm at 0.8 A/cm2, thanks to the reduced strain in the overall structure which enables a higher In incorporation during the growth.
Published: 2019

27. An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces

Author: Peinan Ni, Benjamin Damilano, Sébastien Héron, Gauthier Briere, Jean-Yves Duboz, Stéphane Vézian, Masanobu Iwanaga, Virginie Brandli, Patrice Genevet, Sébastien Chenot, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut Non Linéaire de Nice Sophia-Antipolis (INLN), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS), Université Nice Sophia Antipolis (1965 - 2019) (UNS), ONERA - The French Aerospace Lab [Palaiseau], ONERA, Centre National de la Recherche Scientifique (CNRS)-Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université Polytechnique Hauts-de-France (UPHF)-Institut supérieur de l'électronique et du numérique (ISEN), and COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Fabrication, Photoluminescence, Gallium nitride, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Nanoimprint lithography, law.invention, chemistry.chemical_compound, law, Surface roughness, Reactive-ion etching, ComputingMilieux_MISCELLANEOUS, Wavefront, [PHYS]Physics [physics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, [PHYS.PHYS.PHYS-ATM-PH]Physics [physics]/Physics [physics]/Atomic and Molecular Clusters [physics.atm-clus], 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Semiconductor, chemistry, Optoelectronics, 0210 nano-technology, business
Abstract: International audience; A new class of quasi 2D optical components, known as metasurfaces and exhibiting exceptional optical properties have emerged in recent years. The scattering properties of their subwavelength patterns allow molding the wavefront of light in almost any desired manner. While the proof of principle is demonstrated by various approaches, only a handful of low cost and fabrication friendly materials are suitable for practical implementations. To further develop this technology toward broadband application and industrial production, new materials and new fabrication methods are required. In addition, moving from passive to active devices with, for instance, dynamic tuning requires to move from dielectrics to semiconductors. Here, an etching-free process is presented that combines nanoimprint and selective area sublimation of a semiconductor material to realize centimeter-scale metalenses of high optical quality. Use of gallium nitride is chosen for this demonstration, as it is a widespread semiconductor which can be transparent and active in the visible. The sublimation leads to reduced surface roughness and defects compared to reactive ion etching. As a result, the devices show enhanced photoluminescence efficiency with respect to etched devices. Amplification due to gain in the semiconductor based metaoptics could lead to a new type of optoelectronic devices.
Published: 2019

28. Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

Author: Flavien Cozette, Nathalie Labat, Benjamin Damilano, Stéphane Vézian, Sébastien Chenot, F. Lecourt, Nicolas Defrance, Eric Frayssinet, Yvon Cordier, Julien Brault, Rémi Comyn, Hassan Maher, Christophe Rodriguez, Ngo Thi Huong, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Université Côte d'Azur (UCA), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), This work was supported by French technology facility network RENATECH and the French National Research Agency (ANR) through the projects ED-GaN (ANR-16-CE24-0026-02) and the 'Investissements d'Avenir' program GaNeX (ANR-11-LABX-0014)., Renatech Network, ANR-16-CE24-0026,ED-GaN,Co-intégration des transistors GaN à enrichissement et à déplétion pour les circuits de communication RF de la prochaine génération(2016), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), Université Nice Sophia Antipolis (1965 - 2019) (UNS), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Materials science, business.industry, Transistor, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, law, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Materials Chemistry, Optoelectronics, Sublimation (phase transition), [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Electrical and Electronic Engineering, 0210 nano-technology, business, High electron
Abstract: In this paper, we report on the fabrication of a normally-off Al(Ga)N/GaN high electron mobility transistor with selective area sublimation under vacuum of the p type doped GaN cap layer. This soft method makes it possible to avoid damages otherwise induced by post processing with reactive ion etching techniques. The GaN evaporation selectivity is demonstrated on AlN as well as on AlGaN barrier layers. Furthermore, by properly choosing the AlGaN barrier thickness and composition it is possible to co-integrate a normally-off with a normally-on device on the same substrate. Finally, a local area regrowth of AlGaN can complement this process to increase the maximum drain current in the transistors.
Published: 2020

29. Impact of the Bending on the Electroluminescence of Flexible InGaN/GaN Light-Emitting Diodes

Author: Benjamin Damilano, Marie Lesecq, Sébastien Chenot, Sarra Mhedhbi, Julien Brault, Yvon Cordier, Virginie Hoel, Nicolas Defrance, G. Tabares, A. Ebongue, P. Altuntas, Centre National de la Recherche Scientifique (CNRS), Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), 3M France, Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), ANR-13-NANO-0003,FLEXIGAN,Composants sur supports FLEXIbles de la filière GaN(2013), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)
Subjects: nitrides, Materials science, Flexi-light emitting diodes, Gallium nitride, 02 engineering and technology, Substrate (electronics), Bending, Electroluminescence, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], chemistry.chemical_compound, law, 0103 physical sciences, OLED, Electrical and Electronic Engineering, Diode, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, flexible substrate, chemistry, Optoelectronics, Deformation (engineering), 0210 nano-technology, business, Light-emitting diode
Abstract: The role that the mother substrate plays to influence the performance of InGaN/GaN-based light-emitting diodes (LEDs) onto the adhesive flexible tapes is addressed in this letter. For this purpose, the electroluminescent (EL) spectra and current density–voltage ( $J$ – $V$ ) characteristics of flexi-LEDs are studied under different convex bending configurations (from a curvature radius of infinity to 1.4 cm), showing only one peak around 442 nm in all the cases. Both the EL spectra and $J$ – $V$ characteristics are affected by the applied tensile stress when the flexi-LED is bent. In fact, an increase of the applied tensile strain from 0.02% to 0.09% results in a red-shift of the EL peak energy by 3 meV at 0.7 mA, and a drop of the current at high forward bias. In addition, such flexi-LEDs exhibit a reversible response when a significant mechanical deformation is applied.
Published: 2016

30. Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS

Author: Abdelatif Jaouad, Yvon Cordier, Vincent Aimez, Rémi Comyn, Hassan Maher, and Sébastien Chenot
Subjects: Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, Chemical vapor deposition, Substrate (electronics), High-electron-mobility transistor, Epitaxy, 01 natural sciences, 0103 physical sciences, Materials Chemistry, Wafer, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, 010302 applied physics, business.industry, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, 0210 nano-technology, business, Molecular beam epitaxy
Abstract: In this paper, we investigate a technological route for the monolithic integration of GaN high-electron-mobility transistors (HEMTs) on silicon complementary metal oxide semiconductor (CMOS) circuits. The CMOS-first approach developed in this work relies on the ammonia-source molecular beam epitaxy (ammonia-MBE) technique which operates at noticeably lower temperatures than the metalorganic chemical vapor deposition (MOCVD) technique. The presence of CMOS devices on the wafer is a challenge that has been addressed by reducing the maximum growth temperature of (Al,Ga)N materials from 920 to 830–850 °C without any degradation of the GaN crystal quality nor the HEMT device behavior. In addition, we developed a dielectric stack able to withstand the large stress arising from the growth process and to mitigate the related cracking and delamination issues. Capacitance–voltage measurements have shown that the HEMT epitaxial structures provide a capacitance plateau with a sharp pinch-off behavior, attesting the absence of any significant interface traps nor residual donor contamination due to the presence of a dielectric mask on the silicon substrate. Preliminary results show that thin buffer HEMT devices with normal electrical behaviors can be locally grown at low temperature.
Published: 2016

31. Lasing up to 380 K in a sublimated GaN nanowire

Author: Tai Tsuchizawa, Masaya Notomi, Sébastien Chenot, Stéphane Vézian, Benjamin Damilano, Sylvain Sergent, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), business.industry, Nanowire, 02 engineering and technology, 021001 nanoscience & nanotechnology, medicine.disease_cause, Laser, 01 natural sciences, law.invention, Optical pumping, law, 0103 physical sciences, medicine, Optoelectronics, Sublimation (phase transition), 0210 nano-technology, business, Lasing threshold, ComputingMilieux_MISCELLANEOUS, Ultraviolet
Abstract: We report on GaN nanowire lasers fabricated by selective-area sublimation, and we show that sublimated GaN nanowires can exhibit ultraviolet lasing action under optical pumping beyond room temperature, up to 380 K. We study by microphotoluminescence the temperature-dependent behavior of single nanowire lasers between 7 K and 380 K and extract a characteristic temperature of T = 126 K. We finally present a statistical study of the maximum lasing temperature in individual sublimated GaN nanowires and use it to assess the performance of the selective-area sublimation method for nanowire-based lasing applications.
Published: 2020

32. GaN Schottky diodes for proton beam monitoring

Author: J Hérault, Sébastien Chenot, Jean-Claude Grini, Jean-Yves Duboz, Maxime Hugues, Julie Zucchi, Richard Trimaud, Eric Frayssinet, Patrick Chalbet, M. Vidal, COMUE Université Côte d'Azur (2015-2019) (COMUE UCA), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), Université Côte d'Azur (UCA)-Université Côte d'Azur (UCA)-Centre National de la Recherche Scientifique (CNRS), Université Côte d'Azur (UCA), Laboratoire d'Informatique Fondamentale de Lille (LIFL), Université de Lille, Sciences et Technologies-Institut National de Recherche en Informatique et en Automatique (Inria)-Université de Lille, Sciences Humaines et Sociales-Centre National de la Recherche Scientifique (CNRS), GeT PlaGe, Genotoul, Institut National de la Recherche Agronomique (INRA), Centre Antoine Lacassagne, CRLCC Antoine Lacassagne, COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Génome et Transcriptome - Plateforme Génomique (GeT-PlaGe), Institut National de la Recherche Agronomique (INRA)-Plateforme Génome & Transcriptome (GET), Génopole Toulouse Midi-Pyrénées [Auzeville] (GENOTOUL), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Ecole Nationale Vétérinaire de Toulouse (ENVT), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-Génopole Toulouse Midi-Pyrénées [Auzeville] (GENOTOUL), Université Fédérale Toulouse Midi-Pyrénées-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Centre de Lutte contre le Cancer Antoine Lacassagne [Nice] (UNICANCER/CAL), UNICANCER-Université Côte d'Azur (UCA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), Université de Toulouse (UT)-Université de Toulouse (UT)-Ecole Nationale Vétérinaire de Toulouse (ENVT), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-Génopole Toulouse Midi-Pyrénées [Auzeville] (GENOTOUL), Université de Toulouse (UT)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Université Fédérale Toulouse Midi-Pyrénées-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse)
Subjects: Physics - Instrumentation and Detectors, Materials science, Proton, 0206 medical engineering, FOS: Physical sciences, Applied Physics (physics.app-ph), 02 engineering and technology, 7. Clean energy, 030218 nuclear medicine & medical imaging, 03 medical and health sciences, Responsivity, [SPI]Engineering Sciences [physics], 0302 clinical medicine, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, General Nursing, ComputingMilieux_MISCELLANEOUS, Diode, [PHYS]Physics [physics], business.industry, Photoconductivity, Detector, Schottky diode, Response time, Physics - Applied Physics, Instrumentation and Detectors (physics.ins-det), 020601 biomedical engineering, Optoelectronics, business, Beam (structure)
Abstract: We have demonstrated that GaN Schottky diodes can be used for high energy (64.8 MeV) proton detection. Such proton beams are used for tumor treatment, for which accurate and radiation resistant detectors are needed. Schottky diodes have been measured to be highly sensitive to protons, to have a linear response with beam intensity and fast enough for the application. Some photoconductive gain was found in the diode leading to a good compromise between responsivity and response time. The imaging capability of GaN diodes in proton detection is also demonstrated., Comment: 12 pages, 3 figures
Published: 2018

33. Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH 3 -MBE

Author: Ludovic Largeau, Farid Medjdoub, Mohamed Al Khalfioui, Fabrice Semond, Jean Massies, Stephanie Rennesson, Sébastien Chenot, Ezgi Dogmus, M. Nemoz, Malek Zegaoui, Mathieu Leroux, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université Nice Sophia Antipolis (1965 - 2019) (UNS), and ANR-17-CE05-0013,BREAkuP,Matériaux à ultra large bande interdite pour les futurs applications d'électronique de puissance(2017)
Subjects: 010302 applied physics, Materials science, Silicon, business.industry, chemistry.chemical_element, 02 engineering and technology, Surfaces and Interfaces, Substrate (printing), 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, 0103 physical sciences, Materials Chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Electrical and Electronic Engineering, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, business, Ohmic contact, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2018

34. Selective area sublimation of GaN for top-down fabrication of nanostructures (Conference Presentation)

Author: Marc Portail, Jean Massies, Benjamin Damilano, Mathieu Leroux, Aimeric Courville, Virginie Brandli, Stéphane Vézian, Julien Brault, Sébastien Chenot, and Blandine Alloing
Subjects: Materials science, Fabrication, Nanostructure, business.industry, Nanowire, Optoelectronics, Sublimation (phase transition), business, Quantum well
Abstract: A fraction of a SiNx mono-layer is formed on a GaN layer by exposing the surface to a Si flux. When the sample is heated under vacuum at high temperature (900°C), we observe the sublimation of GaN in the regions uncovered by the thermally resistant SiNx mask. This selective area sublimation (SAS) process can be used for the formation of nanopyramids and nanowires with a diameter down to 4 nm. Also, if InGaN quantum wells are included in the structures before sublimation, InGaN quantum disks with quasi identical sizes in the 3 dimensions of space can be formed using SAS.
Published: 2018

35. Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

Author: Benjamin Damilano, Yvon Cordier, A. Ebongue, Virginie Hoel, D. Zhou, Eric Frayssinet, Julien Brault, Nicolas Defrance, Sébastien Chenot, Marie Lesecq, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Puissance - IEMN (PUISSANCE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Renatech Network, ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), ANR-13-NANO-0003,FLEXIGAN,Composants sur supports FLEXIbles de la filière GaN(2013), Université Nice Sophia Antipolis (1965 - 2019) (UNS), Physique - IEMN (PHYSIQUE - IEMN), This work was supported in part by the technology facility network RENATECH, in part by the French National Research Agency (ANR)through the Project FLEXIGaN, and in part by the 'Investissements d’Avenir' through the Program GaNeX, COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Laboratoire International associé sur les phénomènes Critiques et Supercritiques en électronique fonctionnelle, acoustique et fluidique (LIA LICS/LEMAC), Ecole Centrale de Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Université Polytechnique Hauts-de-France (UPHF), Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'électronique, automatique et mesures électriques (LEAME), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon, and Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: Materials science, 02 engineering and technology, Substrate (electronics), Electroluminescence, Epitaxy, 7. Clean energy, 01 natural sciences, Luminance, law.invention, GaN, Thermal conductivity, law, 0103 physical sciences, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, Diode, 010302 applied physics, business.industry, flexible tape, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Light emitting diodes, Electronic, Optical and Magnetic Materials, InGaN, Wavelength, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, Light-emitting diode
Abstract: International audience; Blue (Ga,In)N-based light-emitting diodes (LEDs) grown on a Si(111) substrate by metal-organic vapor phase epitaxy are transferred on a flexible tape after the Si substrate removal. Their optical and thermal behaviors are measured and compared to those of regular LEDs on Si. The light output power of the flexible LEDs is increased due to a higher light extraction efficiency related to the removal of the absorbing Si substrate. However, the maximum output power is limited by thermal effects due to the lower thermal conductivity of the flexible tape. Monitoring the electroluminescence wavelength of the flexible LEDs allows determining their acceptable operating range. The maximum flexible LED luminance is 5×10 5 cd/m 2 .
Published: 2018

36. Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties

Author: Pierre-Marie Coulon, Blandine Alloing, Jesús Zúñiga-Pérez, Sébastien Chenot, Denis Lefebvre, and Virginie Brandli
Subjects: Materials science, business.industry, Nanowire, Nanotechnology, Condensed Matter Physics, Epitaxy, Electronic, Optical and Magnetic Materials, Volumetric flow rate, Homogeneity (physics), Perpendicular, Optoelectronics, Polar, Growth rate, Metalorganic vapour phase epitaxy, business
Abstract: Site-controlled growth of GaN nanowires (NWs) on GaN-on-sapphire templates with a patterned SiN mask has been carried out by metalorganic vapor phase epitaxy using a continuous-flow growth mode. A low V/III ratio compared to that used for GaN layer growth, combined with low precursor flow rates for both Ga and N precursors, has been used to promote the nanowire growth on Ga-polar substrates. The lateral growth rate, that is, perpendicular to the c-axis, could be further controlled using appropriate growth temperatures and H2/N2 ratios. Besides, the influence of the pattern geometry on the nanowire aspect ratio and size homogeneity has been addressed.
Published: 2015

37. Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications

Author: F. Lecourt, Virginie Hoel, Yvon Cordier, Nicolas Defrance, Stephanie Rennesson, Jean Claude De Jaeger, Sébastien Chenot, Marie Lesecq, Etienne Okada, and M. Chmielowska
Subjects: Electron mobility, Materials science, business.industry, Mechanical Engineering, Induced high electron mobility transistor, High-electron-mobility transistor, Condensed Matter Physics, Epitaxy, Barrier layer, Mechanics of Materials, Optoelectronics, General Materials Science, business, Microwave, Sheet resistance, Power density
Abstract: The aim of this paper is to optimize the epitaxial layer structure of an AlGaN/GaN high electron mobility transistor (HEMT) for high power density at high frequency. The idea is to play on the polarization engineering with the different layers of the epitaxial stack. The influence of the cap and barrier layer thicknesses, the aluminum content in the barrier and the insertion of an AlGaN buffer layer are studied through the electron gas density, electron mobility and sheet resistance. This permits to find out the best trade-off in order to satisfy the requirements for high performances.
Published: 2014

38. Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults

Author: Sébastien Chenot, M. Teisseire, Florian Tendille, Philippe De Mierry, and Philippe Vennéguès
Subjects: Materials science, business.industry, Stacking, Cathodoluminescence, Chemical vapor deposition, Condensed Matter Physics, Inorganic Chemistry, Materials Chemistry, Sapphire, Optoelectronics, Wafer, Metalorganic vapour phase epitaxy, Dislocation, business, Stacking fault
Abstract: We report on the selective area growth of semipolar (11-22) GaN epilayers on wet etched r-plane patterned sapphire substrates (PSS) by metal organic chemical vapor deposition. Using a three-step growth method, planar (11-22) GaN epilayers on 2 in. wafers with significant optical and structural quality improvements have been obtained. The filtering of basal stacking faults and dislocations was achieved by overlapping adjacent crystals and forming voids between them. These voids act as a barrier to defect propagation which results in reduced defect density at the surface of the epilayer. Cathodoluminescence measurements at 80 K revealed a dislocation density of 5.1×107 cm−2 and a basal stacking fault density below 30 cm−1. Moreover, photoluminescence and X-ray diffraction measurements attested a material quality similar to conventional GaN on c-plane sapphire. Such large scale semipolar GaN templates are opening the way for efficient semipolar devices grown heteroepitaxially.
Published: 2014

39. GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Author: A. Cutivet, M. Chmielowska, A. Agboton, Aimeric Courville, J. Camus, M. A. Djouadi, Philippe Vennéguès, Quentin Simon, P. de Mierry, Marie Lesecq, P. Altuntas, J.C. De Jaeger, K. Ait Aissa, Eric Frayssinet, M. Nemoz, Nicolas Defrance, Sébastien Chenot, L. Le Brizoual, Yvon Cordier, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université Nice Sophia Antipolis (... - 2019) (UNS), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), and Université de Nantes (UN)-Université de Nantes (UN)
Subjects: Materials science, Fabrication, Silicon, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), Epitaxy, 01 natural sciences, Crystal, [SPI]Engineering Sciences [physics], 0103 physical sciences, Wafer, AlN, physical vapour deposition, 010302 applied physics, business.industry, epitaxy, Sputter deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, GaN on silicon, chemistry, transistor, Optoelectronics, 0210 nano-technology, business, Molecular beam epitaxy
Abstract: In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based structures on silicon can then be regrown with device quality active layers, as attested by the realization of high electron mobility transistors. Furthermore, the low substrate bowing achieved with these structures is of high interest for the fabrication of large GaN-on-silicon wafers. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Published: 2014

40. Generation of THz radiation due to 2D-plasma oscillations in interdigitated GaN quantum well structures at room temperature

Author: Viktoras Gružinskis, Wojciech Knap, Jeremie Torres, Sébastien Chenot, A. Penot, Pavel Shiktorov, Luca Varani, Philippe Nouvel, Yvon Cordier, C. Consejo, M. Chmielowska, Nina Dyakonova, Frederic Teppe, Evgenij Starikov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Semiconductor Physics Institute (Vilnius), and Vilnius University [Vilnius]
Subjects: 010302 applied physics, Physics, Terahertz radiation, business.industry, Bolometer, General Physics and Astronomy, Michelson interferometer, Resonance, 02 engineering and technology, terahertz radiation emission, 021001 nanoscience & nanotechnology, Plasma oscillation, 01 natural sciences, plasma waves, [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, law, 0103 physical sciences, Optoelectronics, Emission spectrum, 0210 nano-technology, business, Astrophysics::Galaxy Astrophysics, Quantum well, Voltage
Abstract: International audience; We report on room temperature electrically-induced terahertz emission from interdigitated GaN quantum well structures. The emission spectrum has been analysed in a Michelson interferometer using a 4K-Si bolometer as a terahertz detector. A resonant peak at the frequency of around 3 THz was observed in emission spectra. A threshold behaviour of the resonance with respect to applied voltage takes place. By using the proposed analytical model the measured/observed experimentally resonant behaviour of emission spectra is interpreted as a result of ungated stream-plasma instability in the channel.
Published: 2014

41. Ultraviolet light emitting diodes using III-N quantum dots

Author: Mohamed Al Khalfioui, Bernard Gil, Julien Brault, Samuel Matta, Daniel Rosales, Florian Tendille, Mathieu Leroux, Philippe De Mierry, Jean Massies, Sébastien Chenot, Benjamin Damilano, Thi Huong Ngo, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Physique de l'Exciton, du Photon et du Spin (PEPS), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)-Université Nice Sophia Antipolis (... - 2019) (UNS), and ANR-14-CE26-0025,NANOGANUV,Fabrication, Modélisation, Caractérisation de Nanostructures AlGaN Auto-Assemblées pour Emetteurs UV(2014)
Subjects: Fabrication, Materials science, 02 engineering and technology, Electroluminescence, 7. Clean energy, 01 natural sciences, law.invention, law, Electric field, 0103 physical sciences, General Materials Science, 010302 applied physics, business.industry, Mechanical Engineering, Quantum-confined Stark effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Mechanics of Materials, Quantum dot, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Optoelectronics, Polar, 0210 nano-technology, business, Molecular beam epitaxy, Light-emitting diode
Abstract: (Al,Ga)N-based quantum dots (QDs) grown on Al 0.5 Ga 0.5 N by molecular beam epitaxy have been studied as the active region for the fabrication of ultra-violet (UV) light emitting diodes (LEDs). In the first part, using both “polar” (0001) and “semipolar” (112¯2) surface orientations, the structural and optical properties of different QD structures are investigated and compared. In particular, their propensity to get an emission in the UV range is analyzed in correlation with the influence of the internal electric field on their optical properties. In a second part, (0001) and (112¯2)-oriented LEDs using GaN/Al 0.5 Ga 0.5 N QD as active regions have been fabricated. Their main current-voltage characteristics and electroluminescence properties are discussed, with a focus on the LED emission wavelength range reached for both surface orientations: it is shown that a large part of the UV-A region can be covered, with longer wavelengths-from 415 to 360 nm-for the “polar” LEDs, and shorter ones-from 345 to 325 nm-for the “semipolar” LEDs. In addition, the influence of the internal electric field on the QD-LEDs working operation is shown.
Published: 2016

42. AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy

Author: Benjamin Damilano, Yvon Cordier, Philippe Vennéguès, Stephanie Rennesson, and Sébastien Chenot
Subjects: Materials science, Silicon, business.industry, Transistor, chemistry.chemical_element, Heterojunction, Algan gan, Surfaces and Interfaces, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, Ammonia, chemistry.chemical_compound, chemistry, Hall effect, law, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, business, Fermi gas, Molecular beam epitaxy
Abstract: We report on the study of AlGaN/GaN high electron mobility transistors (HEMTs) incorporating an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy (NH3-MBE). The structural characterizations confirm the good crystalline quality of the heterostructure and the pseudomorphic growth of InGaN. This is also verified by the Hall effect mobility of about 2130 cm2 V−1 s−1. The associated two-dimensional electron gas carrier concentration is in the range of 8 × 1012 cm−2 for heterostructures grown on GaN:Fe-on-sapphire templates. Normal DC transistor operation is observed. Similar results have been obtained on silicon substrates. To our knowledge, this is the first demonstration of AlGaN/GaN HEMTs with an InGaN back-barrier grown by NH3-MBE.
Published: 2013

43. Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes

Author: Borge Vinter, Julien Brault, A. Kahouli, Benjamin Damilano, Mathieu Leroux, Jean Massies, and Sébastien Chenot
Subjects: Materials science, business.industry, Exciton, Electroluminescence, Condensed Matter Physics, medicine.disease_cause, law.invention, Inorganic Chemistry, law, Quantum dot, Materials Chemistry, Sapphire, medicine, Optoelectronics, Quantum efficiency, business, Ultraviolet, Light-emitting diode, Molecular beam epitaxy
Abstract: Taking advantage of the strain-induced 2-dimensional (2D)–3D “Stransky–Krastanov type” growth mode of GaN on Al x Ga 1− x N, we report on the fabrication of ultraviolet (UV) light emitting diodes (LEDs) using GaN quantum dots (QDs) as emitters. The structures have been grown by molecular beam epitaxy on sapphire (0001) substrates. GaN QDs, with density ∼8×10 10 cm −2 , are formed on Al 0.5 Ga 0.5 N layers. The electroluminescence (EL) spectrum is dominated by a blue–violet emission (400–430 nm) at very low injection currents (≤2 A/cm 2 ). At currents above 10 A/cm 2 , a UV emission ( x Ga 1− x N-based QD-LED performances (optical power, external quantum efficiency) are presented and discussed in correlation to the specific 3D localization of excitons in the QDs.
Published: 2013

44. Bulk Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN

Author: Yvon Cordier, Marcel Placidi, J. C. Moreno, Sébastien Chenot, A. Fontserè, N. Baron, and Amador Pérez-Tomás
Subjects: Materials science, business.industry, Bulk temperature, Sapphire, Optoelectronics, Algan gan, High-electron-mobility transistor, Electrical and Electronic Engineering, business, Forward current, Electronic, Optical and Magnetic Materials
Published: 2012

45. Reverse current thermal activation of AlGaN/GaN HEMTs on Si(111)

Author: J. C. Moreno, Yvon Cordier, Sébastien Chenot, N. Baron, Amador Pérez-Tomás, A. Fontserè, and Marcel Placidi
Subjects: Arrhenius equation, Materials science, Silicon, business.industry, chemistry.chemical_element, Thermionic emission, Reverse current, Activation energy, Atmospheric temperature range, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, symbols.namesake, chemistry, Thermal, symbols, Optoelectronics, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, business, Leakage (electronics)
Abstract: The objective of this paper is to analyze the impact of the high temperature on the on-state and the reverse leakage currents (gate, drain and bulk) of AlGaN/GaN HEMTs grown on Si(1 1 1) in the temperature range of 25–310 °C. After intensive testing, it has been observed that the (drain and gate–to-source) leakage currents exhibit a weak increase with the temperature up to 150 °C. The leakage through the silicon substrate has a primordial role, as the drain reverse leakage appears to be due to electron injection from the Si substrate/AlN/GaN buffer layers into the GaN buffer. At higher temperatures, the activation energy (Ea), extracted from Arrhenius plots, is much higher being Ea = 0.20 eV and Ea = 0.40 eV for drain and gate leakage currents, respectively. We suggest that this relevant thermal activation is related to temperature-dependent thermionic currents over different barriers.
Published: 2012

46. Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates

Author: Yvon Cordier, Sébastien Chenot, Fabrice Semond, M. Chmielowska, and Mohammed R. Ramdani
Subjects: Materials science, Silicon, business.industry, Doping, chemistry.chemical_element, Gallium nitride, Condensed Matter Physics, Epitaxy, Electronic, Optical and Magnetic Materials, Crystal, chemistry.chemical_compound, chemistry, Electrical resistivity and conductivity, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, business, Carbon, Molecular beam epitaxy
Abstract: The effect of carbon doping on crystal quality and electrical isolation has been investigated in GaN based structures grown by ammonia assisted molecular beam epitaxy on silicon substrates. A dramatic improvement of the GaN resistivity is obtained when a doping level of several 1018 cm−3 is reached. This improvement is however accompanied with a degradation of the crystal quality that is itself dependent on the density of threading dislocation present in the underlying layers. The analysis of the electrical behavior of transistors with thin GaN buffer layers shows that electron trapping occurs when carbon is introduced, except in the case of a structure with an AlN spacer at the interface between the AlGaN barrier and the GaN channel. Clear correlations between the amplitude of such trapping effects and the amount of carbon introduced in the buffer layers have been observed.
Published: 2012

47. Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)

Author: E. Roudon, Jean Camassel, Adrien Michon, Sébastien Chenot, Thierry Chassagne, Denis Lefebvre, Marc Portail, Marcin Zielinski, Yvon Cordier, Sylvie Contreras, Stéphane Vézian, Benoit Jouault, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut de Recherche en Communications et en Cybernétique de Nantes (IRCCyN), Mines Nantes (Mines Nantes)-École Centrale de Nantes (ECN)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN)-PRES Université Nantes Angers Le Mans (UNAM)-Centre National de la Recherche Scientifique (CNRS), NOVASiC, Savoie Technolac, Devaty, RP and Dudley, M and Chow, TP and Neudeck, and PG
Subjects: Materials science, Hydrogen, Stacking, chemistry.chemical_element, 3C-SiC/Si, Nanotechnology, 02 engineering and technology, 01 natural sciences, law.invention, chemistry.chemical_compound, 6H-SiC, law, Propane, 0103 physical sciences, General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Growth pressure, Graphene, Mechanical Engineering, CVD, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Chemical engineering, Mechanics of Materials, 0210 nano-technology
Abstract: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), Cleveland, OH, SEP 11-16, 2011; International audience; We have grown graphene on SiC(0001) using propane-hydrogen CVD. In this work, we present the effects of growth pressure and temperature on structural and electrical properties. Structural characterizations evidence the formation of graphene with in-plane rotational disorder, except for low growth pressure and high growth temperature which lead to the formation of a (6 root 3x6 root 3)-30 degrees interface between graphene and SiC. Electrical properties of samples presenting different graphene/SiC stacking and interfaces are compared and discussed.
Published: 2012

48. CVD Growth of Graphene on 2’’ 3C-SiC/Si Templates: Influence of Substrate Orientation and Wafer Homogeneity

Author: Marc Portail, Adrien Michon, Denis Lefebvre, Sébastien Chenot, Thierry Chassagne, Yvon Cordier, Abdelkarim Ouerghi, Stéphane Vézian, and Marcin Zielinski
Subjects: Materials science, Single process, business.industry, Graphene, Mechanical Engineering, Nanotechnology, Condensed Matter Physics, law.invention, Template, Mechanics of Materials, Electrical resistivity and conductivity, Macroscopic scale, law, Homogeneity (physics), Optoelectronics, General Materials Science, Wafer, business
Abstract: Structural and electrical properties of graphene elaborated on 3C-SiC(111)/Si and 3C-SiC(100)/Si templates, using propane-argon gas mixtures under CVD environment, are presented. On 3C-SiC(111), the graphitic phase is clearly attributable to graphene and presents good electrical conductivity at the macroscopic scale. The opposite case is observed on 3C-SiC(100), for which the graphitic phase develops more rapidly but with a high degree of disorientation. The graphitization, which can be coupled with 3C-SiC growth stage, is efficient over the whole surface of 2’’ wafer and allows to elaborate, in a single process, Graphene on Silicon wafers.
Published: 2012

49. Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET

Author: A. Fontserè, Peter M. Gammon, Yvon Cordier, Marcel Placidi, Amador Pérez-Tomás, N. Baron, Michael R. Jennings, Sébastien Chenot, J. C. Moreno, and Pablo Fernandez-Martinez
Subjects: Materials science, Condensed matter physics, business.industry, Contact resistance, Field effect, Gallium nitride, Heterojunction, High-electron-mobility transistor, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, chemistry, MOSFET, Optoelectronics, Electrical and Electronic Engineering, business, Ohmic contact, Sheet resistance
Abstract: In this paper two types of Al/Ti-based Ohmic contacts to Gallium Nitride (GaN) based devices are presented; ImplantedN^+GaN (like the ones found in the Source/Drain of GaN Metal Oxide Semiconductor Field Effect Transistors-MOSFET) and heterojunction (HJ) AlGaN/GaN contacts (Source/Drain of High Electron Mobility Transistors-HEMT). Sheet resistance (R"s"h) and contact resistance (R"c) have been investigated in the temperature (T) range of 25-250^oC. It was found that the R"s"h (850/700@W@?) (25/250^oC) and R"c (2.2/0.7@Wmm) decrease with T for ImplantedN^+GaN contact and R"s"h (400/850@W@?) and R"c (0.2/0.4@Wmm) (weakly for R"c) increase with T for HJAlGaN/GaN contact. Numerical computation based models are used to determine the theoretical R"s"h and R"c behavior with T and to fit the experimental values.
Published: 2011

50. Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T

Author: Yvon Cordier, Peter M. Gammon, Marcel Placidi, J. C. Moreno, Amador Pérez-Tomás, Michael R. Jennings, Sébastien Chenot, A. Fontserè, and N. Baron
Subjects: Materials science, business.industry, Mechanical Engineering, Doping, Schottky diode, Heterojunction, Algan gan, High-electron-mobility transistor, Condensed Matter Physics, Mechanics of Materials, MOSFET, Optoelectronics, General Materials Science, business, Fermi gas, Ohmic contact
Abstract: The temperature dependence of Ohmic contacts to GaN devices is investigated in this paper via by measuring TLM contact resistances TLM vs Tas a function of temperature. measurements. In particular, the two types of Ohmic contacts are considered: (1) Contacts to highly doped implanted regions (such as the MOSFET drain/source contacts or the back contact of Schottky diodes) and (2) contacts to the 2 dimensional electron gas (2DEG) of an AlGaN/GaN heterojunction.
Published: 2011

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