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arXiv:2104.04948v1, et al., We present spectroscopic and photometric observations of 17 dwarf-nova superoutbursts obtained by KOOLS-IFU mounted on the 3.8 m telescope Seimei at the Okayama Observatory of Kyoto University and through the Variable Star Network collaboration (VSNET). Our spectroscopic observations for six outbursts were performed within 1 d of their optical peak. 11 objects (TCP J00590972+3438357, ASASSN-19ado, TCP J06073081−0101501, ZTF20aavnpug, ASASSN-19ady, MASTER OT J061642.05+435617.9, TCP J20034647+1335125, ASASSN-20kv, ASASSN-20kw, MASTER OT J213908.79+161240.2, and ASASSN-20mf) were previously unknown systems, and our observations enabled quick classification of their transient type. These results illustrate that the Seimei telescope has the capability to conduct quick follow-up observations of unknown transients. Our photometric observations yielded that 11 of the objects are WZ Sge-type dwarf novae and their candidates, and the other six are SU UMa-type dwarf novae and their candidates. The He ii 4686 Å emission line was clearly detected among ASASSN-19ado, TCP J06073081−0101501 and MASTER OT J213908.79+161240.2, the association of which with a spiral arm structure in an accretion disk has been suggested in previous studies. Our result suggests that a higher-inclination system shows a stronger emission line of He ii 4686 Å, as well as larger-amplitude early superhumps., Maeda acknowledges support from the Japan Society for the Promotion of Science (JSPS) KAKENHI grant JP18H05223, JP20H00174, and JP20H04737. U. Burgaz acknowledges the support provided by the Turkish Scientific and Technical Research Council (TÜBITAK2211C and 2214A). This work was supported by the project APVV-15-0458 “Interacting binaries - Key for the Understanding of the Universe”. This work was supported by the Slovak Research and Development Agency under the contract No. APVV15-0458 and by the Slovak Academy of Sciences grant VEGA No. 2/0030/21. The authors from Sternberg institute thank the Program of Development of Lomonosov MSU ‘Leading Scientific Schools’. A.A.B, N.P.I. and M.A.B. (SAI MSU) are supported by the Interdisciplinary Scientific and Educational School of Moscow University ’Fundamental and Applied Space Research’. This research was partly supported by the Slovak Academy of Sciences grant VEGA No. 2/0030/21.

In an effort to locate the sites of emission at different frequencies and physical processes causing variability in blazar jets, we have obtained high time-resolution observations of BL Lacertae over a wide wavelength range: with the Transiting Exoplanet Survey Satellite (TESS) at 6000–10000 Å with 2 minute cadence; with the Neil Gehrels Swift satellite at optical, UV, and X-ray bands; with the Nuclear Spectroscopic Telescope Array at hard X-ray bands; with the Fermi Large Area Telescope at γ-ray energies; and with the Whole Earth Blazar Telescope for measurement of the optical flux density and polarization. All light curves are correlated, with similar structure on timescales from hours to days. The shortest timescale of variability at optical frequencies observed with TESS is ∼0.5 hr. The most common timescale is 13 ± 1 hr, comparable with the minimum timescale of X-ray variability, 14.5 hr. The multiwavelength variability properties cannot be explained by a change solely in the Doppler factor of the emitting plasma. The polarization behavior implies that there are both ordered and turbulent components to the magnetic field in the jet. Correlation analysis indicates that the X-ray variations lag behind the γ-ray and optical light curves by up to ∼0.4 day. The timescales of variability, cross-frequency lags, and polarization properties can be explained by turbulent plasma that is energized by a shock in the jet and subsequently loses energy to synchrotron and inverse Compton radiation in a magnetic field of strength ∼3 G.

The characteristics of a resistive-switching RAM (ReRAM) device are investigated using a HfO2 thin film. HfO2 is prepared using the solution-coating method. In the HfO2-precursor solution, hafnium isopropoxide is used as a solute and ethylene glycol monomethyl ether as a solvent. Additionally, diethanolamine (DEA) is used as a chemical modifier. The solution is prepared by adjusting the solvent to achieve concentrations of 0.1 mol l−1, 0.5 mol l−1, and 0.5 mol l−1 + DEA (4 eq). After applying the solution on Pt, the films are obtained by spin coating and sintering. The HfO2-ReRAM is fabricated using Al as the top electrode, and bipolar properties are obtained for all three concentrations. A fabricated HfO2-ReRAM device with an average thickness of approximately 28 nm exhibits a ON/OFF current ratio of 104. In the high-resistance state, conduction is mainly due to the Pool–Frenkel conduction and Schottky emission, whereas in the low-resistance state, conduction is mainly ohmic.

Mg codoping into Eu-doped GaN (GaN:Eu) changed the dominant optical site and increased the photoluminescence (PL) intensity at room temperature (RT). From the ratio of PL integrated intensity at 25 K to that at 300 K, PL efficiency of the GaN:Eu,Mg layer was evaluated to be as high as 77%. On the basis of this experiment, GaN:Eu-based LEDs grown by NH3 MBE were fabricated. Clear rectification characteristics with a turn-on voltage of 3.2 V were observed and a pure red emission was observed by the naked eye at RT. For the electroluminescence (EL) spectra, two predominant peaks of higher-efficiency optical sites A and C were selectively enhanced and the EL intensity was improved. This result suggests that GaN:Eu was very effective for realizing red-light-emitting devices using the nitride semiconductor.