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The nematode Trichinella pseudospiralis is a cosmopolitan parasite capable of infecting both birds and mammals including humans. T. pseudospiralis has a limited zoonotic importance in comparison to that of the other Trichinella species. However, it has been recognized as the etiological agent of two outbreaks of trichinellosis due to the consumption of wild boar meat. The role played by birds in the epidemiology of T. pseudospiralis is still unclear and needs to be deepened. The aim of our work was to show the results of an extensive wild bird surveillance carried out in the Emilia-Romagna (E-R) region, northern Italy, over the last 16 years. As part of the regional wildlife surveillance program, 14,933 raptors and carrion-eating birds’ carcasses were necropsied from 2006 to 2021 and tested for the presence of Trichinella spp. larvae with only one positive result, an adult female of western marsh harrier. The larvae load (LPG) was evaluated on breast (100 LPG), wings (3.6 LPG), shoulder (2 LPG), head (4.5 LPG), thighs (8 LPG), lower legs (2 LPG) and tongue (0.77 LPG). The results of the present study confirm that also in northern Italy T. pseudospiralis has a low prevalence comparing to that of other Trichinella species. However, this study demonstrates that T. pseudospiralis can reach a high parasitic load in infested birds. The large distribution range, probably facilitated by its ability to infest birds, suggests the need for a continuous monitoring program.

The GaAs-like longitudinal-optical (LO) phonon frequency in hydrogenated GaAs1−xNx (x = 0.01) layers—with different H doses and similar low-energy irradiation conditions—was investigated by micro-Raman measurements in different scattering geometries and compared with those of epitaxial GaAs and as-grown GaAs1−xNx reference samples. A relaxation of the GaAs selection rules was observed, to be explained mainly on the basis of the biaxial strain affecting the layers. The evolution of the LO phonon frequency with increasing hydrogen dose was found to heavily depend on light polarization, thus suggesting that a linear relation between strain and the frequency of the GaAs-like LO phonon mode should be applied with some caution. Moreover, photoreflectance measurements in fully passivated samples of identical N concentration show that the blueshift of the GaAs-like LO frequency, characteristic of the hydrogenated structures, is dose-dependent and strictly related to the strain induced by the specific type of the dominant N-H complexes. A comparison of photoreflectance results with the finite element method calculations confirms that this dependence on the H dose is due to the gradual replacement of the N-2H complexes responsible for the electronic passivation of N with N-3H complexes, which are well known to induce an additional and sizeable lattice expansion. [ABSTRACT FROM AUTHOR]

Bulk deep level spectra in molecular-beam epitaxy grown undoped n-ZnSe semiconductors was studied.

Research was conducted to study the strain and surface morphology of lattice-matched ZnSe/InxGa(sub 1-x)As heterostructures fabricated by molecular beam epitaxy on GaAs(011)2x4 surfaces. The surface morphology was determined using Nomarski optical microscopy while AFM images were obtained utilizing a Digital Instruments Nanoscope. Results indicated a complex surface morphology in relation to the formation of surface slip steps during the nucleation of dislocation half-loops at the surface.

Since last decade the usage of smart phones, PDAs, tablets have become increased due to its usability, friendliness and portability. Because of this extensive growth, mobile malware targeting the android platform. Android users store personal information like name, address, contacts, text message, financial transactions, one time password, mail IDs, net banking details, making calls without user authentication, recording voice calls etc. Mobile devices offered lot of services and application than those offered by other personal computer. In this research paper, we have done a combined malware detection tool and analyzer and removal tool for group of application by considering computational complexity, redundancy and detection ratio of mobile malware. As a detailed summary, the research in this paper focus on makes significant contributions for android malware detections by means of following steps: 1. The process of extracting source code from mobile android apk file. 2. We create a array of structures from extracted information of mobile android application in order to develop a mobile malware detection framework.2. Finally create a database by removing redundancy which will be useful for identifying malware / fault information. Support Vector machine learning algorithm and logistics regression are used for differentiating Benign from Malware app. Finally calculating accuracy in terms of precision, accuracy and recall. The experimental results show the true positive classification of malicious at 95.5% and false positive rate as 0.8%. [ABSTRACT FROM AUTHOR]

ZnSe nanowires with a dominant wurtzite structure have been grown at low temperature (300 °C) by molecular beam epitaxy assisted by solid Au nanoparticles. The nanowires emission is polarized perpendicularly to their axis in agreement with the wurtzite selection rules. Alternations of wurtzite and zinc-blende regions have been observed by transmission electron microscopy, and their impact on the nanowires optical properties has been studied by microphotoluminescence. The nanowires show a dominant intense near-band-edge emission as well as the ZnSe wurtzite free exciton line. A type II band alignment between zinc-blende and wurtzite ZnSe is evidenced by time-resolved photoluminescence. From this measurement, we deduce values for the conduction and valence band offsets of 98 and 50 meV, respectively. [ABSTRACT FROM AUTHOR]

The GaAs-like longitudinal optical phonon frequency in two hydrogenated GaAs1-xNx/GaAs1-xNx:H microwire heterostructures-with similar N concentration, but different H dose and implantation conditions-has been investigated by micro-Raman mapping. In the case of GaAs0.991N0.009 wires embedded in barriers where GaAs-like properties are recovered through H irradiation, the phonon frequency in the barriers undergoes a blue shift with respect to the wires. In GaAs0.992N0.008 wires embedded in less hydrogenated barriers, the phonon frequency exhibits an opposite behavior (red shift). Strain, disorder, phonon localization effects induced by H-irradiation on the GaAs-like phonon frequency are discussed and related to different types of N-H complexes formed in the hydrogenated barriers. It is shown that the red (blue) character of the frequency shift is related to the dominant N-2H (N-3H) type of complexes. Moreover, for specific experimental conditions, an all-optical determination of the uniaxial strain field is obtained. This may improve the design of recently presented devices that exploit the correlation between uniaxial stress and the degree of polarization of photoluminescence. [ABSTRACT FROM AUTHOR]