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In-situ phosphorus doped silicon epitaxial film with 2.8 X 1021cm-3 doping level is found to show high tensile stress comparable to carbon doped silicon with 1.8% substitutional carbon. As-grown samples show electrically activated dopant concentration of less than 2 X 1020 cm-3. The high tensile and low activation could be well explained by formation of a pseudocubic Si3P4 structure in silicon lattice. Film resistivity of 0.29 mOhm-cm could be obtained with 0.25 ms annealing at 1200 {degree sign}C, with slight reduction in tensile strain. Also, 0.23 mOhm-cm could be obtained by millisecond anneal at 1300 {degree sign}C, but with 30% reduction in tensile strain.

3D MOSFET technology, such as FinFETs, is the central semiconductor inflection that brings new challenges and opportunities to the semiconductor industry. Dynamic surface annealing (DSA) enables the IC manufactures to solve many of the challenges. In this paper, we demonstrate DSA can form abrupt source/drain extension, which is essential to minimize the device's parasitic resistance. DSA also improves salicide morphology, minimize salicide piping defects, and reduce junction leakage. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)