1. Multiple magneto-ionic regimes in Ta/Co$_{20}$Fe$_{60}$B$_{20}$/HfO$_{2}$
- Author
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Pachat, R., Ourdani, D., van der Jagt, J. W., Syskaki, M. -A., Di Pietro, A., Roussigné, Y., Ono, S., Gabor, M. S., Chérif, M., Durin, G., Langer, J., Belmeguenai, M., Ravelosona, D., and Diez, L. Herrera
- Subjects
Physics - Applied Physics ,Condensed Matter - Materials Science - Abstract
In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resulting in perpendicular anisotropy (PMA) and further into an overoxidized state with IPA. The IPA$\,\to\,$PMA regime is found to be significantly faster than the PMA$\,\to\,$IPA regime, while only the latter shows full reversibility under the same gate voltages. The effective damping parameter also shows a marked dependence with gate voltage in the IPA$\,\to\,$PMA regime, going from 0.029 to 0.012, and only a modest increase to 0.014 in the PMA$\,\to\,$IPA regime. The existence of two magneto-ionic regimes has been linked to a difference in the chemical environment of the anchoring points of oxygen species added to underoxidized or overoxidized layers. Our results show that multiple magneto-ionic regimes can exist in a single device and that their characterization is of great importance for the design of high performance spintronics devices.
- Published
- 2021
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