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We investigate a recombination active grown-in defect limiting the bulk lifetime (Τbulk) of high quality float-zone (FZ) p-type silicon wafers. After annealing the samples at temperatures between 80°C and 400°C, Τbulk was found to increase from ~500 μs to ~1.5 ms. By isochronal annealing the p-type samples between 80°C and 400°C for 30 min, the annihilation energy (Eann) of the defect was determined to be 0.3

This paper investigates the importance of incomplete ionization of dopants in compensated p-type Si and its impact on the majority-carrier density and mobility and thus on the resistivity. Both theoretical calculations and temperature-dependent Hall-effect measurements demonstrate that the carrier density is more strongly affected by incomplete ionization in compensated Si than in uncompensated Si with the same net doping. The previously suggested existence of a compensation-specific scattering mechanism to explain the reduction of mobility in compensated Si is shown not to be consistent with the T-dependence of the measured carrier mobility. The experiment also shows that, in the vicinity of 300 K, the resistivity of compensated Si has a much weaker dependence on temperature than that of uncompensated silicon. [ABSTRACT FROM AUTHOR]

In this study, we present experimental data regarding the concentration of the boron-oxygen complex in compensated n-type silicon when subjected to illumination. We find that the defect density is independent of the net dopant concentration and is strongly dependent on the minority carrier concentration during illumination. We show that annealing at temperatures in the range 500 °C to 700 °C permanently reduces the defect density possibly via a decrease in the oxygen dimer concentration. [ABSTRACT FROM AUTHOR]

The conductivity mobility for majority carrier holes in compensated p-type silicon is determined by combined measurement of the resistivity and the net doping, the latter via electrochemical capacitance-voltage measurements. The minority electron mobility was also measured with a technique based on measurements of surface-limited effective carrier lifetimes. While both minority and majority carrier mobilities are found to be significantly reduced by compensation, the impact is greater on the minority electron mobility. The Hall factor, which relates the Hall mobility to the conductivity mobility, has also been determined using the Hall method combined with the capacitance-voltage measurements. Our results indicate a similar Hall factor in both compensated and noncompensated samples. [ABSTRACT FROM AUTHOR]