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The growth of $\alpha$-Ga$_2$O$_3$ and $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $\alpha$-Al$_2$O$_3$(10$\bar{1}$0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically exploring the parameter space accessed by MBE and MOCATAXY, phase-pure $\alpha$-Ga$_2$O$_3$(10$\bar{1}$0) and $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$(10$\bar{1}$0) thin films are realized. The presence of In on the $\alpha$-Ga$_2$O$_3$ growth surface remarkably expands its growth window far into the metal-rich flux regime and to higher growth temperatures. With increasing O-to-Ga flux ratio ($R_{\text{O}}$), In incorporates into $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ up to $x \leq 0.08$. Upon a critical thickness, $\beta$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ nucleates and subsequently heteroepitaxially grows on top of $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ facets. Metal-rich MOCATAXY growth conditions, where $\alpha$-Ga$_2$O$_3$ would not conventionally stabilize, lead to single-crystalline $\alpha$-Ga$_2$O$_3$ with negligible In incorporation and improved surface morphology. Higher $T_{\text{G}}$ further results in single-crystalline $\alpha$-Ga$_2$O$_3$ with well-defined terraces and step edges at their surfaces. For $R_{\text{O}} \leq 0.53$, In acts as a surfactant on the $\alpha$-Ga$_2$O$_3$ growth surface by favoring step edges, while for $R_{\text{O}} \geq 0.8$, In incorporates and leads to a-plane $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ faceting and the subsequent ($\bar{2}$01) $\beta$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ growth on top. Thin film analysis by STEM reveals highly crystalline $\alpha$-Ga$_2$O$_3$ layers and interfaces. We provide a phase diagram to guide the MBE and MOCATAXY growth of single-crystalline $\alpha$-Ga$_2$O$_3$ on $\alpha$-Al$_2$O$_3$(10$\bar{1}$0).

The structural characterization of hetero-aggregates in 3D is of great interest, e.g., for deriving process-structure or structure-property relationships. However, since 3D imaging techniques are often difficult to perform as well as time and cost intensive, a characterization of hetero-aggregates based on 2D image data is desirable, but often non-trivial. To overcome the issues of characterizing 3D structures from 2D measurements, a method is presented that relies on machine learning combined with methods of spatial stochastic modeling, where the latter are utilized for the generation of synthetic training data. This kind of training data has the advantage that time-consuming experiments for the synthesis of differently structured materials followed by their 3D imaging can be avoided. More precisely, a parametric stochastic 3D model is presented, from which a wide spectrum of virtual hetero-aggregates can be generated. Additionally, the virtual structures are passed to a physics-based simulation tool in order to generate virtual scanning transmission electron microscopy (STEM) images. The preset parameters of the 3D model together with the simulated STEM images serve as a database for the training of convolutional neural networks, which can be used to determine the parameters of the underlying 3D model and, consequently, to predict 3D structures of hetero-aggregates from 2D STEM images. Furthermore, an error analysis is performed to evaluate the prediction power of the trained neural networks with respect to structural descriptors, e.g. the hetero-coordination number., Comment: 37 pages, 16 figures, 5 tables

A reformulated implementation of single-sideband ptychography enables analysis and display of live detector data streams in 4D scanning transmission electron microscopy (STEM) using the LiberTEM open-source platform. This is combined with live first moment and further virtual STEM detector analysis. Processing of both real experimental and simulated data shows the characteristics of this method when data is processed progressively, as opposed to the usual offline processing of a complete dataset. In particular, the single side band method is compared to other techniques such as the enhanced ptychographic engine in order to ascertain its capability for structural imaging at increased specimen thickness. Qualitatively interpretable live results are obtained also if the sample is moved, or magnification is changed during the analysis. This allows live optimization of instrument as well as specimen parameters during the analysis. The methodology is especially expected to improve contrast- and dose-efficient in-situ imaging of weakly scattering specimens, where fast live feedback during the experiment is required., Comment: 14 pages, 11 figures. Achim Strauch and Dieter Weber contributed equally to this work and share first-authorship. Corresponding Author: Achim Strauch

Strain has a strong effect on the properties of materials and the performance of electronic devices. Their ever shrinking size translates into a constant demand for accurate and precise measurement methods with very high spatial resolution. In this regard, transmission electron microscopes are key instruments thanks to their ability to map strain with sub-nanometer resolution. Here we present a novel method to measure strain at the nanometer scale based on the diffraction of electron Bessel beams. We demonstrate that our method offers a strain sensitivity better than $2.5 \cdot 10^{-4}$ and an accuracy of $1.5 \cdot 10^{-3}$, competing with, or outperforming, the best existing methods with a simple and easy to use experimental setup., Comment: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 114, 243501 (2019) and may be found at https://aip.scitation.org/doi/abs/10.1063/1.5096245 Data available at: https://doi.org/10.5281/zenodo.2566137 and code available at: https://bitbucket.org/lutosensis/tem-thesis/src

We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate voltage. The spin polarization can be turned off and even inverted. This behavior enables a spin transistor where the signal is switched off by turning off the spin injection using the field-effect. We propose a model based on a gate-dependent shift of the minimum in the graphene density of states with respect to the tunneling density of states of cobalt, which can explain the observed bias and gate dependence., Comment: revised version, accepted by APL

We compare different methods to measure the anisotropy of the spin-lifetime in graphene. In addition to out-of-plane rotation of the ferromagnetic electrodes and oblique spin precession, we present a Hanle experiment where the electron spins precess around either a magnetic field perpendicular to the graphene plane or around an in-plane field. In the latter case, electrons are subject to both in-plane and out-of-plane spin relaxation. To fit the data, we use a numerical simulation that can calculate precession with anisotropies in the spin-lifetimes under magnetic fields in any direction. Our data show a small, but distinct anisotropy that can be explained by the combined action of isotropic mechanisms, such as relaxation by the contacts and resonant scattering by magnetic impurities, and an anisotropic Rashba spin-orbit based mechanism. We also assess potential sources of error in all three types of experiment and conclude that the in-plane/out-of-plane Hanle method is most reliable., Comment: 9 pages, 14 figure + Supplemental Material, revised version accepted for publication by Physical Review B

Recently, we suggested an unconventional approach [the so-called Internal-Field-Guarded-Active-Region Design (IFGARD)] for the elimination of the crystal polarization field induced quantum confined Stark effect (QCSE) in polar semiconductor heterostructures. And in this work, we demonstrate by means of micro-photoluminescence techniques the successful tuning as well as the elimination of the QCSE in strongly polar $[000\bar{1}]$ wurtzite GaN/AlN nanodiscs while reducing the exciton life times by more than two orders of magnitude. The IFGARD based elimination of the QCSE is independent of any specific crystal growth procedures. Furthermore, the cone-shaped geometry of the utilized nanowires (which embeds the investigated IFGARD nanodiscs) facilitates the experimental differentiation between quantum confinement- and QCSE-induced emission energy shifts. Due to the IFGARD, both effects become independently adaptable., Comment: 9 pages, 5 figures

Magnetic skyrmions are topologically protected whirls that decay through singular magnetic configurations known as Bloch points. We have used Lorentz transmission electron microscopy to infer the energetics associated with the topological decay of magnetic skyrmions far from equilibrium in the chiral magnet Fe$_{1-x}$Co$_x$Si. We observed that the life time $\tau$ of the skyrmions depends exponentially on temperature, $\tau \sim \tau_0 \, e^{\Delta E/k_B T}$. The prefactor $\tau_0$ of this Arrhenius law changes by more than 30 orders of magnitude for small changes of magnetic field reflecting a substantial reduction of the life time of skyrmions by entropic effects and thus an extreme case of enthalpy-entropy compensation. Such compensation effects, being well-known across many different scientific disciplines, affect topological transitions and thus topological protection on an unprecedented level., Comment: 6 pages, 4 figures, 5 pages supplement, 4 figures supplement

Several consecutive experiments are described with a printed circuit board PCB set-up, especially designed for these experiments. Doing the consecutive experimental tasks opens up possibility to determine the value of electron charge $q_e.$ The fluctuations of the voltage $U(t)$ should be measured for different illuminations of a photodiode. The voltage is amplified 1 million times $Y=10^6$. The amplified voltage $YU(t)$ is applied to the device, which gives the result of the value of the time averaged square of the voltage $U_\mathrm{S}=\left<(Y U(t))^2\right>/U_0$. This voltage $U_\mathrm{S}$ is measured with a multimeter. The series of measurements gives the possibility to determine the $q_e$ using the well known Schottky formula for the spectral density of the current noise $(I^2)_f=2q_e\left.$ For the junior high school students, the basic problem is to analyze the analog squaring. Students' work is separated and graded in four categories S, M, L, XL divided by age of students. For the last XL categories, the tasks contain problems oriented to physics university education program and include theoretical research of the PCB set-up as an engineering device. This is the problem of EPO6, December 2018 ``Day of the Charge'' considered. EPO6 is organized by Sofia branch of Union of physicists in Bulgaria in cooperation with Faculty of physics of Sofia University and Society of Physicists of Republic of Macedonia., Comment: 54 pages, 6 languages (English, Bulgarian, Macedonian, Serbian, Russian, German), 2 solutions (English and German), 49 figures total, 11 tables, 4 appendices

A microscopic study of the individual annealed (In,Ga)As/GaAs quantum dots is done by means of high-resolution transmission electron microscopy. The Cauchy-Green strain-tensor component distribution and the chemical composition of the (In,Ga)As alloy are extracted from the microscopy images. The image processing allows for the reconstruction of the strain-induced electric-field gradients at the individual atomic columns extracting thereby the magnitude and asymmetry parameter of the nuclear quadrupole interaction. Nuclear magnetic resonance absorption spectra are analyzed for parallel and transverse mutual orientations of the electric-field gradient and a static magnetic field., Comment: 8 pages, 6 figures