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8 results on '"Rooyakers, R."'

2. Total-dose effects caused by high-energy neutrons and gamma rays in multiple-gate FETs

Author

Kilchytska, Valeriya, Alvarado, J., Collaert, N., Rooyakers, R., Militaru, O., Berger, G., and Flandre, D.

Subjects
Field-effect transistors -- Testing, Field-effect transistors -- Design and construction, Field-effect transistors -- Properties, Neutrons -- Influence, Neutrons -- Usage, Gamma rays -- Influence, Gamma rays -- Usage, Business, Electronics, Electronics and electrical industries
Published
2010

3. Effect of high-energy neutrons on MuGFETs

Author

UCL - SST/ICTM - Institute for Information and Communication. Technologies, Electronics and Applied Mathematics, UCL - SST/IRMP - Institut de recherche en mathématiques et physique, Kilchytska, Valeriya, Flandre, Denis, Alvarado, Joaquin, Collaert, Nadine, Rooyakers, R., Militaru, Otilia, Berger, Guy, 5th Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Circuits (EUROSOI 2009), UCL - SST/ICTM - Institute for Information and Communication. Technologies, Electronics and Applied Mathematics, UCL - SST/IRMP - Institut de recherche en mathématiques et physique, Kilchytska, Valeriya, Flandre, Denis, Alvarado, Joaquin, Collaert, Nadine, Rooyakers, R., Militaru, Otilia, Berger, Guy, and 5th Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Circuits (EUROSOI 2009)

Abstract

This paper investigates, for the first time. the influence of high-energy neutrons on Multiple-Gate FETs (MuGFETs) with various gate lengths and fin widths Neutron-induced degradation is addressed through the variation of major device parameters such as threshold voltage, subthreshold slope, maximum transconductance and DIBL We demonstrate that high-energy neutrons result in total-dose effects largely similar to those caused by gamma- and proton-irradiations It is shown that, contrarily to the generally-believed immunity to irradiation, very short-channel MuGFETs can become extremely sensitive to the total-dose effect. The possible reasons of such length-dependent neutron-induced degradation are discussed and finally related to gate edges (C) 2009 Elsevier Ltd All rights reserved

Published
2010

4. Total-Dose Effects Caused by High-Energy Neutrons and gamma-Rays in Multiple-Gate FETs

Author

UCL - SST/ICTM - Institute for Information and Communication. Technologies, Electronics and Applied Mathematics, UCL - SST/IRMP - Institut de recherche en mathématiques et physique, Kilchytska, Valeriya, Flandre, Denis, Alvarado, Joaquin, Collaert, Nadine, Rooyakers, R., Militaru, Otilia, Berger, Guy, UCL - SST/ICTM - Institute for Information and Communication. Technologies, Electronics and Applied Mathematics, UCL - SST/IRMP - Institut de recherche en mathématiques et physique, Kilchytska, Valeriya, Flandre, Denis, Alvarado, Joaquin, Collaert, Nadine, Rooyakers, R., Militaru, Otilia, and Berger, Guy

Abstract

This work investigates the effects of high-energy neutrons and gamma-rays on multiple-gate FETs with different geometries (notably gate lengths down to 50 nm). The impact of radiation on device behavior is addressed through the variation of parameters such as threshold voltage, subthreshold slope, transconductance maximum and DIBL. It is shown that degradations caused by gamma-rays and high-energy neutrons with similar doses are largely similar. It is revealed that, on the contrary to the generally-believed immunity to irradiation, very short-channel FinFETs can become extremely sensitive to the total dose effect. The possible reasons are discussed.

Published
2010

5. Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs

Author

UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Kilchytska, Valeriya, Alvarado Pulido, José Joaquin, Collaert, N., Rooyakers, R., Put, S., Claeys, C., Flandre, Denis, Sixth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2010), UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Kilchytska, Valeriya, Alvarado Pulido, José Joaquin, Collaert, N., Rooyakers, R., Put, S., Claeys, C., Flandre, Denis, and Sixth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2010)

Abstract

n/a

Published
2010

6. Effect of high-energy neutrons on MuGFETs

Author

UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, UCL - SST/CRC - Centre de ressources du cyclotron, Kilchytska, Valeriya, Alvarado Pulido, José Joaquin, Collaert, N., Rooyakers, R., Militaru, Otilia, Berger, G., Flandre, Denis, UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, UCL - SST/CRC - Centre de ressources du cyclotron, Kilchytska, Valeriya, Alvarado Pulido, José Joaquin, Collaert, N., Rooyakers, R., Militaru, Otilia, Berger, G., and Flandre, Denis

Abstract

This paper investigates, for the first time, the influence of high-energy neutrons on Multiple-Gate FETs (MuGFETs) with various gate lengths and fin widths. Neutron-induced degradation is addressed through the variation of major device parameters such as threshold voltage, subthreshold slope, maximum transconductance and DIBL. We demonstrate that high-energy neutrons result in total-dose effects largely similar to those caused by c- and proton-irradiations. It is shown that, contrarily to the generally believed immunity to irradiation, very short-channel MuGFETs can become extremely sensitive to the total-dose effect. The possible reasons of such length-dependent neutron-induced degradation are discussed and finally related to gate edges.

Published
2010

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