1. Room-temperature efficient light detection by amorphous Ge quantum wells
- Author
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Maria Miritello, Corrado Spinella, Salvatore Cosentino, Giuseppe Nicotra, Francesca Simone, Antonio Terrasi, Isodiana Crupi, Salvatore Mirabella, Cosentino, S., Miritello, M., Crupi, I., Nicotra, G., Simone, F., Spinella, C., Terrasi, A., and Mirabella, S.
- Subjects
Nanostructure ,Photon ,Materials science ,Photodetector ,CONFINEMENT ,Blue shift ,Optical oscillator strength ,Materials Science(all) ,Quantum confinement effect ,Light detection ,Quantum confinement ,General Materials Science ,Light absorption ,Quantum well ,Potential well ,Nano Express ,Photon absorption ,SUPERLATTICES ,Germanium ,business.industry ,Room temperature, Amorphous film ,Internal quantum efficiency ,NANOCLUSTERS ,Semiconductor quantum well ,Condensed Matter Physics ,Nanostructures ,Blueshift ,Amorphous solid ,Quantum dot ,Optoelectronics ,PHOTOLUMINESCENCE ,Quantum efficiency ,business ,Ultrathin films, Germanium ,Ge quantum well - Abstract
In this work, ultrathin amorphous Ge films (2 to 30 nm in thickness) embedded in SiO2 layers were grown by magnetron sputtering and employed as proficient light sensitizer in photodetector devices. A noteworthy modification of the visible photon absorption is evidenced due to quantum confinement effects which cause both a blueshift (from 0.8 to 1.8 eV) in the bandgap and an enhancement (up to three times) in the optical oscillator strength of confined carriers. The reported quantum confinement effects have been exploited to enhance light detection by Ge quantum wells, as demonstrated by photodetectors with an internal quantum efficiency of 70%. © 2013 Cosentino et al.
- Published
- 2013