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Exceptional points (EPs) are the singularities of a non-Hermitian system where the eigenenergies and eigenstates simultaneously coalesce, a topological property that gives rise to a plethora of exotic phenomena. Probing the EPs and associated effects requires the system to go through the EPs. However, the ultrahigh sensitivity of an isolated EP to the external disturbances makes accessing the EPs difficult. To overcome this limit, many approaches have been presented to form the exceptional line/ring and surface. Here, we demonstrate that a quantum exceptional chamber, which is a three-dimensional collection of the EPs, can be constructed in the coupled plasmon-quantum dot (QD) systems by the nondipole effect of the QD. For an asymmetric QD adjacent to a plasmonic nanoparticle, it is found that the contributions of multipole transitions to the coupling strength can be larger than that of dipole transition. The orientation-dependent quantum interference between the dipole and multipole transitions can lead to controllable switch between the weak and strong coupling, and provides an extra degree of freedom to form a high-dimension EP space. Our approach provides a robust platform for accessing the quantum EPs and related applications.

Abscisic acid (ABA) plays crucial roles in plant response to environmental stresses and development. The clade A phosphatases (PP2Cs) play a crucial role in ABA signaling. However, little is known about the details regarding PP2Cs family genes in Brassica juncea var. tumida. Here, 20 clade A PP2Cs family genes were identified in tuber mustard genome, including BjuABI1s, BjuABI2s, BjuAHG1s, BjuAHG3s, BjuHAB1, BjuHAB2s, BjuHAI1s, BjuHAI2s and BjuHAI3. The promoters of BjuPP2Cs family genes contained various of cis-acting elements, such as ABRE, GT1GMSCAM4, ARFAT and MYB1AT. We also analyzed the expression pattern of clade A BjuPP2Cs under abiotic stresses (low temperature, NaCl and ABA) treatment, pathogen Plasmodiophora brassicae treatment and different stages of stem swollen. The results suggested that clade A BjuPP2Cs regulated tuber mustard response to P. brassicae to mediate the formation of clubroot and might play roles in stem swelling and response to abiotic stresses. This study provides valuable information for further functional investigations of clade A PP2Cs family genes in B. juncea var. tumida.

Integrated photonic circuits with quantum dots provide a promising route for scalable quantum chips with highly efficient photonic sources. However, unpolarized emission photons in general sacrifice half efficiency when coupling to the waveguide fundamental mode by a cross polarization technique for suppressing the excitation laser, while suspended waveguide photonics sources without polarization filters have poor scalability due to their mechanical fragility. Here, we propose a strategy for overcoming the challenge by coupling an elliptical Bragg resonator with waveguides on a solid-state base, featuring near-unity polarization efficiency and enabling on-chip pulsed resonant excitation without any polarization filters. We theoretically demonstrate that the proposed devices have outstanding performance of a single-photon source with 80% coupling efficiency into on-chip planar waveguides and an ultra-small extinction ratio of 10 − 11 , as well as robustness against quantum dot position deviation. Our design provides a promising method for scalable quantum chips with a filter-free high-efficiency single-photon source.

Background To evaluate the role of Tp‐e and (Tp‐e)/QT ratio in differentiating benign ventricular premature complex (VPC) and malignant polymorphic ventricular tachycardia (PVT). Methods From January 2017 to December 2017, patients with documented polymorphic ventricular tachycardia (PVT) or ventricular fibrillation (VF) were consecutive included and classified as PVT/VF group. Sixty age‐ and sex‐matched healthy individuals were recruited as comparative control and subdivided into non‐VPC and VPC group. Clinical characteristics and Tp‐e and Tp‐e/QT ratio between the three groups were compared. Results Tp‐e and (Tp‐e)/QT ratio were significantly higher in patients of PVT/VF group compared with the other two groups (P, To evaluate the role of Tp‐e and (Tp‐e)/QT ratio in differentiating benign ventricular premature complex (VPC) and malignant polymorphic ventricular tachycardia (PVT).

The integration of single-photon sources and metasurfaces provides powerful conceptual structures for quantum optics applications., The semiconductor quantum dot (QD) has been successfully demonstrated as a potentially scalable and on-chip integration technology to generate the triggered photon streams that have many important applications in quantum information science. However, the randomicity of these photon streams emitted from the QD seriously compromises its use and especially hinders the on-demand manipulation of the spin states. Here, by accurately integrating a QD and its mirror image onto the two foci of a bifocal metalens, we demonstrate the on-demand generation and separation of the spin states of the emitted single photons. The photon streams with different spin states emitted from the QD can be flexibly manipulated to propagate along arbitrarily designed directions with high collimation of the smallest measured beaming divergence angle of 3.17°. Our work presents an effectively integrated quantum method for the simultaneously on-demand manipulation of the polarization, propagation, and collimation of the emitted photon streams.

Photons that have a helical phase front, that is, twisted photons, can carry a discrete, in principle, unlimited, but quantized amount of orbital angular momentum (OAM). Hence, twisted single photons constitute a high-dimensional quantum system with information-processing abilities beyond those of two-level single-photon qubits. To date, the generation of single photons carrying OAM has relied on a non-linear process in bulk crystals, for example, spontaneous parametric down-conversion, which limits both the efficiency and the scalability of the source. Here, we present a bright solid-state source of single photons in an OAM superposition state with a single-photon purity of g(2)(0) = 0.115(1) and a collection efficiency of 23(4)%. The mode purity of the single-photon OAM states is further examined via projection measurements. Future developments of integrated quantum photonic devices with pure OAM states as an additional degree of freedom may enable high-dimensional quantum information processing. Single photons with high orbital angular momenta can act as higher order flying qubits, but efficient generation is scarce. The integration of a single quantum dot emitter into an on-chip mircoring resonator enables the generation of single photons in an orbital angular momentum superposition state.

We present a design for hybrid circular Bragg gratings (hCBGs) for efficiently extracting single-photons emitted by InAs quantum dots (QDs) embedded in GaAs. Finite-difference time-domain simulations show that a very high photon collection efficiency (PCE) up to 96% over a 50 nm bandwidth and pronounced Purcell factors up to 19 at cavity resonance are obtained. We also systematically investigate the geometry parameters, including the SiO2 thickness, grating period, gap width and the central disk radius, to improve the device performances. Finally, the PCEs and the Purcell factors of QDs located at different positions of the hCBG are studied, and the results show great robustness against uncertainties in the location of the QD.

Dielectric metasurfaces require high refractive index contrast materials for optimum performance. This requirement imposes a severe restraint; devices have either been demonstrated at wavelengths of 700nm and above using high-index semiconductors such as silicon, or they use lower index dielectric materials such as TiO$_{2}$ or Si$_{3}$N$_{4}$ and operate in the visible wavelength regime. Here, we show that the high refractive index of silicon can be exploited at wavelengths as short as 532 nm by demonstrating a silicon metasurface with a transmission efficiency of 47% at this wavelength. The metasurface consists of a graded array of silicon posts arranged in a square lattice on a quartz substrate. We show full 2�� phase control and we experimentally demonstrate polarization-independent beam deflection at 532nm wavelength. The crystalline silicon is placed on a quartz substrate by a bespoke layer transfer technique and we note that an efficiency >70% may be achieved for a further optimized structure in the same material. Our results open a new way for realizing efficient metasurfaces based on silicon in the visible wavelength regime., 16 pages, 6 figures, 2 tables

Abscisic acid (ABA) plays important roles in multiple physiological processes, such as plant response to stresses and plant development. The ABA receptors pyrabactin resistance (PYR)/ PYR1-like (PYL)/regulatory components of ABA receptor (RCAR) play a crucial role in ABA perception and signaling. However, little is known about the details regarding PYL family genes in Brassica juncea var. tumida. Here, 25 PYL family genes were identified in B. juncea var. tumida genome, including BjuPYL3, BjuPYL4s, BjuPYL5s, BjuPYL6s, BjuPYL7s, BjuPYL8s, BjuPYL10s, BjuPYL11s, and BjuPYL13. The results of phylogenic analysis and gene structure showed that the PYL family genes performed similar gene characteristics. By analyzing cis-elements in the promoters of those BjuPYLs, several hormone and stress related cis-elements were found. The results of gene expression analysis showed that the ABA receptor homologous genes were induced by abiotic and biotic stress. The tissue-specific gene expression patterns of BjuPYLs also suggested those genes might regulate the stem swelling during plant growth. These findings indicate that BjuPYLs are involved in plant response to stresses and organ development. This study provides valuable information for further functional investigations of PYL family genes in B. juncea var. tumida.

The generation of high-quality entangled photon pairs has been a long-sought goal in modern quantum communication and computation. So far, the most widely used entangled photon pairs have been generated from spontaneous parametric down-conversion (SPDC), a process that is intrinsically probabilistic and thus relegated to a regime of low rates of pair generation. In contrast, semiconductor quantum dots can generate triggered entangled photon pairs through a cascaded radiative decay process and do not suffer from any fundamental trade-off between source brightness and multi-pair generation. However, a source featuring simultaneously high photon extraction efficiency, high degree of entanglement fidelity and photon indistinguishability has been lacking. Here, we present an entangled photon pair source with high brightness and indistinguishability by deterministically embedding GaAs quantum dots in broadband photonic nanostructures that enable Purcell-enhanced emission. Our source produces entangled photon pairs with a pair collection probability of up to 0.65(4) (single-photon extraction efficiency of 0.85(3)), entanglement fidelity of 0.88(2), and indistinguishabilities of 0.901(3) and 0.903(3) (brackets indicate uncertainty on last digit). This immediately creates opportunities for advancing quantum photonic technologies.

© Copyright 2018 American Chemical Society. Two-dimensional transition-metal dichalcogenides (TMDC) are of great interest for on-chip nanophotonics due to their unique optoelectronic properties. Here, we propose and realize coupling of tungsten diselenide (WSe2) monolayers to circular Bragg grating structures to achieve enhanced emission. The interaction between WSe2 and the resonant mode of the structure results in Purcell-enhanced emission, and the symmetric geometrical structure improves the directionality of the out-coupling stream of emitted photons. Furthermore, this hybrid structure produces a record high contrast of the spin valley readout (>40%) revealed by the polarization-resolved photoluminescence (PL) measurements. Our results are promising for on-chip integration of TMDC monolayers with optical resonators for nanophotonic circuits.

We propose and experimentally demonstrate a series of $L_{n}$ slot photonic crystal (PhC) microcavities, which operate as refractive index (RI) gas sensors. The cavities are simply composed of a silicon slab triangular photonic crystal with $n$ holes replaced by a slot, which do not require sophisticated design or high fabrication resolution. With the increase in $n$ , the quality factor of the cavity exponentially increases, which is explained by the envelope of electric field approaching a Gaussian profile. An $L_{9}$ slot PhC microcavity with a quality factor exceeding 30 000, sensitivity of 421 nm per RI unit (RIU), and detection limit down to $1\times 10^{-5}$ RIU was experimentally demonstrated. The performance of the device is comparable with other fine-tuned PhC microcavity structures. Due to its simple structure and high fabrication tolerance, it could have wide applications in optical sensors.

Solid-state single-photon sources with high purity, high brightness and a large degree of linear polarization are appealing to photonic quantum technologies. However, high-performance single-photon sources based on InAs/GaAs quantum dots (QDs) so far are operating at near infrared range, which limits the detection efficiency and potential compatibility with atomic quantum memory in visible. Here, we explore GaAs droplet epitaxial QDs emitting in visible to achieve bright, pure and highly-polarized single-photon emission via coupling to photonic crystal cavities.

Molybdenum ditelluride (MoTe2) has recently shown promise as a gain material for silicon photonics. Reliable single-mode operation and material stability remain two of the major issues that need to be addressed to advance this exciting technology, however. Here, laser-like emission from a sandwiched MoTe2 heterostructure on a silicon single-mode resonator is reported. The heterostructure consists of a layer of MoTe2 sandwiched between thin films of hexagonal boron nitride. It is known that tellurium compounds are sensitive to oxygen exposure, which leads to rapid degradation of the exposed layers in air. By encapsulating the MoTe2 gain material, much improved environmental stability is observed. Using a recently introduced single-mode resonator design, better control over the mode spectrum of the cavity is exercised and single-mode operation with a wide free spectral range is demonstrated. At room temperature, a Q-factor of 4500 and a threshold of 4.2 kW cm−2 at 1319 nm wavelength are achieved. These results lend further support to the paradigm of 2D material-based integrated light sources on the silicon platform.

We propose and experimentally demonstrate a series of $L_{n}$ slot photonic crystal (PhC) microcavities, which operate as refractive index (RI) gas sensors. The cavities are simply composed of a silicon slab triangular photonic crystal with $n$ holes replaced by a slot, which do not require sophisticated design or high fabrication resolution. With the increase in $n$, the quality factor of the cavity exponentially increases, which is explained by the envelope of electric field approaching a Gaussian profile. An $L_{9}$ slot PhC microcavity with a quality factor exceeding 30 000, sensitivity of 421 nm per RI unit (RIU), and detection limit down to $1\times 10^{-5}$ RIU was experimentally demonstrated. The performance of the device is comparable with other fine-tuned PhC microcavity structures. Due to its simple structure and high fabrication tolerance, it could have wide applications in optical sensors.

It is now well established that light trapping is an essential element of thin film solar cell design. Numerous light trapping geometries have already been applied to thin film cells, especially to silicon-based devices. Less attention has been paid to light trapping in GaAs thin film cells, mainly because light trapping is considered less attractive due to the material's direct bandgap and the fact that GaAs suffers from strong surface recombination, which particularly affects etched nanostructures. Here, we study light trapping structures that are implemented in a high-bandgap material on the back of the GaAs active layer, thereby not perturbing the integrity of the GaAs active layer. We study photonic crystal and quasi-random nanostructures both by simulation and by experiment and find that the photonic crystal structures are superior because they exhibit fewer but stronger resonances that are better matched to the narrow wavelength range where GaAs benefits from light trapping. In fact, we show that a 1500 nm thick cell with photonic crystals achieves the same short circuit current as an unpatterned 4000 nm thick cell. These findings are significant because they afford a sizeable reduction in active layer thickness, and therefore a reduction in expensive epitaxial growth time and cost, yet without compromising performance.

This research project was founded by the National Council for Scientific and Technological Development (CNPq) of Brazil (302397/2014-0), by the National Natural Science Foundation of China (11204386, 11411130117, 11334015), by the Open research project of the State Key Laboratory of Optoelectronic Materials and Technologies, Sun-Yat Sen University of China (OEMT-2015-KF-12, OEMT-2015-KF-13) and by EPSRC of U.K. under grant EP/J01771X/1 (Structured Light). Kezheng Li is also supported by the aboard exchange scholar and international doctoral cooperative project of Sun Yat-sen University. The coupling of light between free space and thin film semiconductors is an essential requirement of modern optoelectronic technology. For monochromatic and single mode devices, high performance grating couplers have been developed that are well understood. For broadband and multimode devices, however, more complex structures, here referred to as "coupling surfaces", are required, which are often difficult to realise technologically. We identify general design rules based on the Fourier properties of the coupling surface and show how they can be used to determine the spatial resolution required for the coupler's fabrication. To our knowledge, this question has not been previously addressed, but it is important for the understanding of diffractive nanostructures and their technological realisation. We exemplify our insights with solar cells and UV photodetectors, where high-performance nanostructures that can be realised cost-effectively are essential. Publisher PDF

Plasmonic colour printing has drawn wide attention as a promising candidate for the next-generation colour-printing technology. However, an efficient approach to realize full colour and scalable fabrication is still lacking, which prevents plasmonic colour printing from practical applications. Here we present a scalable and full-colour plasmonic printing approach by combining conjugate twin-phase modulation with a plasmonic broadband absorber. More importantly, our approach also demonstrates controllable chromotropic capability, that is, the ability of reversible colour transformations. This chromotropic capability affords enormous potentials in building functionalized prints for anticounterfeiting, special label, and high-density data encryption storage. With such excellent performances in functional colour applications, this colour-printing approach could pave the way for plasmonic colour printing in real-world commercial utilization., Plasmonics offers an alternative approach to robust colour printing, but real applications require a full-colour and scalable process. Here, the authors develop such an approach by combining plasmonic broadband absorbers with conjugate twin-phase modulation, demonstrating its potential for anticounterfeiting technology.