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The article demonstrates that the rules and practices of cabinet formation and investitures should be taken into account to better grasp the variety of semi-presidentialism in Europe. This is extremely important, since semi-presidentialism as a constitutional system of government (primarily according to a minimalist approach to the definition) is the most common form of inter-institutional and political relations in European countries. The former is most often understood as a constitutional design of inter-institutional relations with a president popularly elected for a fixed term, as well as with a cabinet headed by a prime minister who are collectively responsible to parliament. Thus, not only presidents and parliaments, but cabinets too play a crucial role in the constitutional and political practice of semi-presidentialism, since the latter are collectively responsible to parliaments (or simultaneously to presidents), but are characterised by distinctive parameters of formation. The assumption and hypothesis are that options of cabinet formation and inter-institutional relations in this regard can structure European semi-presidentialism, even without affecting the definition of this constitutional design, but probably depending on the roles and powers of presidents and parliaments in cabinet formation, as well as types of semi-presidentialism regarding the consideration of who can dismiss the cabinet. Based on comparison and systematisation of the cases of European semi-presidentialism, it is justified that cabinet formation (including within various types and consequences of parliamentary votes of investiture in cabinets, as well as their absence) is typically focused on a junction of relations between presidents and parliaments, and are likely to serve as a classification indicator of semi-presidentialism. This is important for constitutional engineering, since detailing the optionality of semi-presidentialism as a constitutional design and system of government, particularly regarding cabinet formation, should extend the horizons, as well as systematise the idea of the options and effects of various institutional designs (in addition to presidentialism and parliamentarism) and political regimes (including democratic, autocratic and hybrid).

Ge, Si, InGaAs, GaInAsP photodiodes are used as optical radiation receivers and function in a spectral range of transparency of quartz fiberglass. For the optical systems operated in the increased radioactivity the photodetectors' application on In2Hg3Te6 crystal base characterized by a photosensitivity in the spectral range of 0,5-1,6 mm and also by increased radiation resistance to alpha, beta and gamma radiation is most acceptable. Schottky photodiode structure was designed on the base of this semiconductor formed by a modified floating zone recrystallization technique where the sedimentation effect was leveled. It consists of n-In2Hg3Te6 substrate and deposited by cathode sputtering Cr barrier layer of thickness within a range 10-11 nm choice of Cr is determined by its optimal optical, electric and adhesive features in high quality radiation-resistant photodiode structures manufacturing. Indium and nichrome are used as ohmic contacts. The barrier structures have the contact area of 1,13 mm2 with photo response of 0,6-1,6 mm at the maximal sensitivity 0,43 A/W on the wavelength l,55 mm. Reverse dark current of these structures do not exceed 4 mA at the bias of 1 V (T=295 K), and the potential barrier height is equal to 0,41 eV. The tests of radiation resistance of these structures demonstrated their ability to function at doses of 2⋅108 rem without evident parameters changes. This allows using them in practical aims in the conditions of high radiation.

The paper presents an original method for contactless express measurement of parameters of thermoelectric materials. The presence of a combination of AC and DC magnetic fields in the gap of the oscillating circuit, where the monitored sample of the thermoelectric material is located, leads — due to Ampere force — to delamination of geometric regions of the occurrence of half-cycles of Foucault current. This in turn causes the appearance of additional heat losses in the oscillating circuit caused by Peltier effect. Computer modeling of these processes with the use of the software package ComsolFenlab 3.3 allowed determining the nature and magnitude of the electric currents in oscillating circuit, the range of operating frequencies, and the ratio of amplitudes of the variable and fixed components of the magnetic field. These components eventually cause a certain temperature difference along the controlled sample, which difference is proportional to the thermoelectric figure of merit Z of the material. The basic expressions are obtained for determining the value of the Seebeck coefficient a, thermal conductivity ?, electrical conductivity ? and thermoelectric figure of merit Z. A description is given to the design of the device for contactless express measurement of parameters of thermoelectric materials based on Bi—Te—Se—Sb solid solutions. Its distinctive feature is the ability to determine the symmetric and asymmetric components of the electric conductivity of the material values. The actual error in parameter measurement in this case is 2%.

We obtained order estimates for the entropy numbers of the Nikol'skii–Besov classes of functions Bp,θr(Td)$B^{\bm{r}}_{p,\theta }(\mathbb {T}^d)$ with mixed smoothness in the metric of the space of quasi‐continuous functions QC(Td)$QC(\mathbb {T}^d)$. We also showed that for 2≤p≤∞$2\le p \le \infty$, 2≤θ<∞$2\le \theta < \infty$, r1>12$r_1>\frac{1}{2}$, d≥2$d\ge 2$, the estimate of the corresponding asymptotic characteristic is exact in order. [ABSTRACT FROM AUTHOR]