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183 results on '"Robinson, I.K."'

4. Superstructure ordering in lanthanum-doped lead magnesium niobate

Author

Fanning, D.M., Robinson, I.K., Jung, S.T., Colla, E.V., Viehland, D.D., and Payne, D.A.

Subjects
Perovskite -- Research, Synchrotron radiation -- Usage, Physics
Abstract

Synchrotron radiation x-ray diffraction was used to measure superstructure reflections of lead magnesium niobate Pb(Mg1/3Nb2/3)O3.

Published
2000

5. Buffer layer strain transfer in AlN/GaN near critical thickness

Author

Kim, Chinkyo, Robinson, I.K., Myoung, Jaemin, Shim, Kyu-Hwan, and Kim, Kyekyoon

Subjects
Semiconductor films -- Research, Thin films -- Analysis, Physics
Abstract

A study was conducted to analyze the strain relaxation of components of a GaN/AlN bilayer on sapphire (0001) as a function of the GaN layer thickness. The critical thickness was the threshold below which dislocations were hindered from forming at the interface between the layers. Results indicated that GaN and AlN relax with the same in-plane lattice constant. Findings also showed that the films were both strained.

Published
1999

9. Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation

Author

Kim, Chinkyo, Robinson, I.K., Spila, T., and Greene, J.E.

Subjects
Semiconductors -- Diffusion, Irradiation -- Usage, Physics
Abstract

Research was conducted to investigate the local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation at room temperature with 25 KeV Ga+ ions. In situ x-ray diffraction as a function of dose was used to monitor the gradual strain relaxation of the metastable Si0.7Ge0.3 film. Results demonstrate that the defects causing excess diffuse scattering scale like extended defects.

Published
1998

10. Adsorbate-geometry specific subsurface relaxation in the CO/Pt(111) system

Author

Wang, J.X., Robinson, I.K., Ocko, B.M., and Adzic, R.R

Subjects
Platinum compounds -- Atomic properties, Chemicals, plastics and rubber industries
Abstract

The study revealed a new type of substrate relaxation by the surface X-ray scattering study of CO adsorption of Pt(111), in which different layer expansions and in-plane rotations occur for the Pt atoms under the near-top-site and the near-bridge-site CO molecules. It concluded that subsurface atoms could move collectively forming a pattern on a nanometer scale determined by the unit cell of an adlayer.

Published
2005

13. Single-image phase retrieval using an edge illumination X-ray phase-contrast imaging setup

Author

Diémoz, P.C., Vittoria, F.A., Hagen, C.K., Endrizzi, M., Coan, P., Brun, E., Wagner, U.H., Rau, C., Robinson, I.K., Bravin, A., and Olivo, A.

Subjects
FRELON CAMERA, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION
Abstract

A method is proposed which enables the retrieval of the thickness or of the projected electron density of a sample from a single input image acquired with an edge illumination phase-contrast imaging setup. The method assumes the case of a quasi-homogeneous sample, i.e. a sample with a constant ratio between the real and imaginary parts of its complex refractive index. Compared with current methods based on combining two edge illumination images acquired in different configurations of the setup, this new approach presents advantages in terms of simplicity of acquisition procedure and shorter data collection time, which are very important especially for applications such as computed tomography and dynamical imaging. Furthermore, the fact that phase information is directly extracted, instead of its derivative, can enable a simpler image interpretation and be beneficial for subsequent processing such as segmentation. The method is first theoretically derived and its conditions of applicability defined. Quantitative accuracy in the case of homogeneous objects as well as enhanced image quality for the imaging of complex biological samples are demonstrated through experiments at two synchrotron radiation facilities. The large range of applicability, the robustness against noise and the need for only one input image suggest a high potential for investigations in various research subjects.

Published
2015

21. Damage accumulation in Si during high-dose self-ion implantation

Author

Zhong, Y., Bailat, C., Averback, R.S., Ghose, S.K., and Robinson, I.K.

Subjects
Annealing -- Analysis, Ion implantation -- Analysis, Silicon -- Research, Silicon -- Properties, Physics
Abstract

The accumulation and annealing of damage in Si implanted with self-ions to high doses is examined. The Huang diffuse x-ray scattering (HDS) and high-resolution x-ray diffraction scans (HRXRD) are used for examining the quantitative information regarding the structure of defect clusters and their annealing properties.

Published
2004

22. Comparison of aqueous and native oxide formation on Cu(111).

Author

Chu, Y.S. and Robinson, I.K.

Subjects
*COPPER surfaces, *OXIDATION
Abstract

Presents the results of an x-ray diffraction investigation of the formation of oxide on electropolished Cu(111) surfaces. Structure of bulk cuprite; Native oxides on Cu(111); Voltammetry of aqueous oxidation; Formation of aqueous oxides; Structural details of aqueous oxides.

Published
1999
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24. Structural trends among ionic metal-halide adlayers on electrode surfaces

Author

J.X. Wang, Robinson, I.K., DeVilbiss, J.E., and Adzie, R.R.

Subjects
Electrodes -- Research, Gold -- Electric properties, Gold -- Chemical properties, Metal halides -- Electric properties, Metal halides -- Chemical properties, Chemicals, plastics and rubber industries
Abstract

X-ray diffraction techniques are used to determine the structures of TI-Cl, Tl-I, and Pb-Br compounds adsorbed on Au(111) in acid solution. Sufficient data are gathered to explore the general structural trends among electrochemically prepared two-dimensional (2D) binary ionic compounds.

Published
2000

25. Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging

Author

Favre-Nicolin, V., Mastropietro, F., Eymery, J., Camacho, D., Niquet, Y.M., Borg, B.M., Messing, M.E., Wernersson, L.-E., Algra, R.E., Bakkers, E.P.A.M., Metzger, T.H., Harder, R., Robinson, I.K., Favre-Nicolin, V., Mastropietro, F., Eymery, J., Camacho, D., Niquet, Y.M., Borg, B.M., Messing, M.E., Wernersson, L.-E., Algra, R.E., Bakkers, E.P.A.M., Metzger, T.H., Harder, R., and Robinson, I.K.

Abstract

Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in nanostructures, which can be recovered directly from the coherent diffraction data recorded on single objects. In this paper, we report results obtained for single homogeneous and heterogeneous nanowires with a diameter smaller than 100 nm, for which we used CDI to retrieve information about deformation and faults existing in these wires. We also discuss the influence of stacking faults, which can create artefacts during the reconstruction of the nanowire shape and deformation. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 035013

Published
2010

26. Surface atomic structure of the <tex>(\sqrt{3}*\sqrt{3})R30^{\circ}Sb$</tex>reconstructions of Ag(111) and Cu(111)

Author

de Vries, S.A., Huisman, W.J., Goedtkindt, Peter, Zwanenburg, M.J., Bennett, S.L., Robinson, I.K., and Vlieg, E.

Subjects
Chemistry, Physics
Abstract

We present an X-ray diffraction structure analysis of the (root 3 x root 3)R30 degrees reconstructions of Ag(lll)-Sb and Cu(lll)-Sb surfaces, We find these structures to be very similar. Contrary to previous reports, we find that all top layer atoms reside at stacking fault positions. Each (root 3x root 3)R30 degrees surface unit cell contains one substitutional Sb atom. We determined the out-of-plane relaxations of the top layer atoms and the in-plane distortions in the second layer. For coverages below 1/3 monolayer, the Sb atoms are embedded randomly at fee positions in the top surface layer. (C) 1998 Elsevier Science B.V. All rights reserved.

Published
1998

28. Resonant scattering in delta-doped heterostructures

Author

Robinson, I.K., Nilsson, P.O., Debowska-Nilsson, D., Ni, Wei-Xin, Hansson, Göran, Robinson, I.K., Nilsson, P.O., Debowska-Nilsson, D., Ni, Wei-Xin, and Hansson, Göran

Abstract

We demonstrate the utility of resonant x-ray scattering in probing the structure of doping layers at a heterostructure interface. The positions of germanium layers inserted at the interface of a silicon epitaxial film assert a strong influence of the phase of the scattered intensity along the crystal truncation rods. The phase of the scattering, and hence the internal structure of the layers, can be determined conveniently by analyzing its energy dependence in the vicinity of the Germanium absorption edge at 11.103 keV. © 2001 American Institute of Physics.

Published
2001
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31. Imaging of micro- and nano-structures with hard X-rays

Author

Rau, C., primary, Crecea, V., additional, Richter, C.-P., additional, Peterson, K.M., additional, Jemian, P.R., additional, Neuhäusler, U., additional, Schneider, G., additional, Yu, X., additional, Braun, P.V., additional, Chiang, T.-C., additional, and Robinson, I.K., additional

Published
2007
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40. Asymmetrically cut crystals as optical elements for highly collimated x-ray beams

Author

Brauer, S., Stephenson, G.B., Sutton, M., Mochrie, S.G.J., Dierker, S.B., Fleming, R.M., Pindak, R., Robinson, I.K., Grübel, G., Als-Nielsen, Jens, Abernathy, D.L., Brauer, S., Stephenson, G.B., Sutton, M., Mochrie, S.G.J., Dierker, S.B., Fleming, R.M., Pindak, R., Robinson, I.K., Grübel, G., Als-Nielsen, Jens, and Abernathy, D.L.

Published
1995

44. Au adsorption on Si(111) studied by Grazing incidence x-ray diffraction

Author

Zabel, H., Robinson, I.K., Schamper, C., Dornisch, D., Moritz, W., Schulz, H., Feidenhans'l, Robert Krarup, Nielsen, M., Grey, F., Johnson, R.L., Zabel, H., Robinson, I.K., Schamper, C., Dornisch, D., Moritz, W., Schulz, H., Feidenhans'l, Robert Krarup, Nielsen, M., Grey, F., and Johnson, R.L.

Published
1992

46. The phases of phosphatidyl ethanolamine monolayers

Author

Zabel, H., Robinson, I.K., Helm, C.A., Tippmann-Krayer, P., Kenn, R.M., Möhwald, H., Als-Nielsen, J., Kjær, K., Zabel, H., Robinson, I.K., Helm, C.A., Tippmann-Krayer, P., Kenn, R.M., Möhwald, H., Als-Nielsen, J., and Kjær, K.

Published
1992

49. X-ray scattering studies of organic monolayers on electrolytic solutions: Arachidic acid on CdCl2

Author

Zabel, H., Robinson, I.K., Kjær, K., Als-Nielsen, J., Kenn, R.M., Böhm, C., Tippmann-Krayer, P., Helm, C.A., Möhwald, H., Leveiller, F., Jacquemain, D., Lahav, M., Leiserowitz, L., Deutsch, M., Zabel, H., Robinson, I.K., Kjær, K., Als-Nielsen, J., Kenn, R.M., Böhm, C., Tippmann-Krayer, P., Helm, C.A., Möhwald, H., Leveiller, F., Jacquemain, D., Lahav, M., Leiserowitz, L., and Deutsch, M.

Published
1992

50. Melting, growth, and faceting of lead precipitates in aluminum

Author

Gråbæk, L., Bohr, J., Andersen, H.H., Johansen, A., Johnson, E., Sarholt-Kristensen, L., Robinson, I.K., Gråbæk, L., Bohr, J., Andersen, H.H., Johansen, A., Johnson, E., Sarholt-Kristensen, L., and Robinson, I.K.

Abstract

Aluminum single crystals cut in the <111> direction were implanted with 2 x 10(20) m-2 Pb+ ions at 75 or 150 keV. The implanted insoluble lead precipitated as epitaxially oriented crystallites in the aluminum matrix. The precipitates were studied by x-ray diffraction at Riso, DESY, and Brookhaven National Laboratory, and showed large superheating as well as supercooling during repeated heating cycles. The as-implanted precipitates had a characteristic size of approximately 140 angstrom, which grew to 210-260 angstrom during repeated heating cycles. A detailed annealing study shows that the growth rate of the precipitates changes discontinuously at the onset of melting. This shows that significant precipitate growth takes place by coalescence. The diffracted x-ray intensities showed characteristic truncation rods (streaks), indicating that the solid precipitates were octahedra limited by {111} planes and truncated at the corners by {100} facets.

Published
1992

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