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Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the standard Born-Oppenheimer approximation breaks down as one of its atoms can move between 6 lattice sites under optical excitation. The impact of this atomic reconfiguration on the photoluminescence properties of G centers is still largely unknown, especially in silicon-on-insulator (SOI) samples. Here, we investigate the displacement of the center-of-mass of the G center in silicon. We show that single G defects in SOI exhibit a multipolar emission and zero-phonon line fine structures with splittings up to $\sim1$ meV, both indicating a motion of the defect central atom over time. Combining polarization and spectral analysis at the single-photon level, we evidence that the reconfiguration dynamics are drastically different from the one of the unperturbed G center in bulk silicon. The SOI structure freezes the delocalization of the G defect center-of-mass and as a result, enables to isolate linearly polarized optical lines. Under above-bandgap optical excitation, the central atom of G centers in SOI behaves as if it were in a 6-slot roulette wheel, randomly alternating between localized crystal sites at each optical cycle. Comparative measurements in a bulk silicon sample and ab initio calculations highlight that strain is likely the dominant perturbation impacting the G center geometry. These results shed light on the importance of the atomic reconfiguration dynamics to understand and control the photoluminescence properties of the G center in silicon. More generally, these findings emphasize the impact of strain fluctuations inherent to SOI wafers for future quantum integrated photonics applications based on color centers in silicon.

Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 \mu$m and identified to a common carbon-complex in silicon, namely the G center. However, inconsistent estimates regarding their quantum efficiency cast doubt on the correct identification of these individual emitters. Through a comparative analysis of their single-photon emission properties, we demonstrate that these single color centers are split in two distinct families of point defects. A first family consists of the genuine single G centers with a well-identified microscopic structure and whose photoluminescence has been investigated on ensemble measurements since the 60's. The remaining defects belong to a new color center, which we will refer to as G$^{\star}$ center, whose atomic configuration has yet to be determined. These results provide a safeguard against future defect misidentifications, which is crucial for further development of quantum technologies relying on G or G$^{\star}$ center quantum properties.

Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum electrodynamics experiments with ensembles of artificial atoms embedded in silicon-on-insulator microresonators. The emitters under study, known as W color centers, are silicon tri-interstitial defects created upon self-ion implantation and thermal annealing. The resonators consist of circular Bragg grating cavities, designed for moderate Purcell enhancement ($F_p=12.5$) and efficient luminescence extraction ($\eta_{coll}=40\%$ for a numerical aperture of 0.26) for W centers located at the mode antinode. When the resonant frequency mode of the cavity is tuned with the zero-phonon transition of the emitters at 1218 nm, we observe a 20-fold enhancement of the zero-phonon line intensity, together with a two-fold decrease of the total relaxation time in time-resolved photoluminescence experiments. Based on finite-difference time-domain simulations, we propose a detailed theoretical analysis of Purcell enhancement for an ensemble of W centers, considering the overlap between the emitters and the resonant cavity mode. We obtain a good agreement with our experimental results assuming a quantum efficiency of $65 \pm 10 \%$ for the emitters in bulk silicon. Therefore, W centers open promising perspectives for the development of on-demand sources of single photons, harnessing cavity quantum electrodynamics in silicon photonic chips.

We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, reaching areal densities of G centers down to $\sim$0.2 $\mu$m$^{-2}$. Single defect creation is demonstrated by photon antibunching in intensity-correlation experiments, thus establishing our approach as a reproducible procedure for generating single artificial atoms in silicon for quantum technologies.

Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts have so far focused on extrinsic defects based on impurities incorporated inside the silicon lattice. Here we demonstrate the detection of single intrinsic defects in silicon, which are linked to a tri-interstitial complex called W-center, with a zero-phonon line at 1.218${\mu}$m. Investigating their single-photon emission properties reveals new information about this common radiation damage center, such as its dipolar orientation and its photophysics. We also identify its microscopic structure and show that although this defect does not feature electronic states in the bandgap, Coulomb interactions lead to excitonic radiative recombination below the silicon bandgap. These results could set the stage for numerous quantum perspectives based on intrinsic luminescent defects in silicon, such as quantum integrated photonics, quantum communications and quantum sensing.

Antiferromagnetic materials are promising platforms for next-generation spintronics owing to their fast dynamics and high robustness against parasitic magnetic fields. However, nanoscale imaging of the magnetic order in such materials with zero net magnetization remains a major experimental challenge. Here we show that non-collinear antiferromagnetic spin textures can be imaged by probing the magnetic noise they locally produce via thermal populations of magnons. To this end, we perform nanoscale, all-optical relaxometry with a scanning quantum sensor based on a single nitrogen-vacancy (NV) defect in diamond. Magnetic noise is detected through an increase of the spin relaxation rate of the NV defect, which results in an overall reduction of its photoluminescence signal under continuous laser illumination. As a proof-of-concept, the efficiency of the method is demonstrated by imaging various spin textures in synthetic antiferromagnets, including domain walls, spin spirals and antiferromagnetic skyrmions. This imaging procedure could be extended to a large class of intrinsic antiferromagnets and opens up new opportunities for studying the physics of localized spin wave modes for magnonics., Comment: 7 pages, 5 figures

Driven non-linear resonators can display sharp resonances or even multistable behaviours amenable to induce strong enhancements of weak signals. Such enhancements can make use of the phenomenon of vibrational resonance whereby a weak low-frequency signal applied to a bistable resonator can be amplified by driving the non-linear oscillator with another appropriately-adjusted non-resonant high-frequency field. Here we demonstrate the resonant enhancement of a weak signal by use of a vibrational force yet in a monostable system consisting of a driven nano-electromechanical nonlinear resonator. The oscillator is subjected to a strong quasi-resonant drive and to two additional tones: a weak signal at lower frequency and a non-resonant driving at an intermediate frequency. We show experimentally and theoretically a significant enhancement of the weak signal thanks to the occurence of vibrational resonance enabled by the presence of the intermediate frequency driving. We analyse this phenomenon in terms of coherent nonlinear resonance manipulation. Our results illustrate a general mechanism which may have applications in the fields of radio-frequency signal processing or sensing for instance.

Stochastic resonance is a general phenomenon usually observed in one-dimensional, amplitude modulated, bistable systems.We show experimentally the emergence of phase stochastic resonance in the bidimensional response of a forced nano-electromechanical membrane by evidencing the enhancement of a weak phase modulated signal thanks to the addition of phase noise. Based on a general forced Duffing oscillator model, we demonstrate experimentally and theoretically that phase noise acts multiplicatively inducing important physical consequences. These results may open interesting prospects for phase noise metrology or coherent signal transmission applications in nanomechanical oscillators. Moreover, our approach, due to its general character, may apply to various systems.

Light scattering by a two-dimensional photonic crystal slab (PCS) can result in dramatic interference effects associated with Fano resonances. Such devices offer appealing alternatives to distributed Bragg reflectors or filters for various applications such as optical wavelength and polarization filters, reflectors, semiconductor lasers, photodetectors, bio-sensors, or non-linear optical components. Suspended PCSs also find natural applications in the field of optomechanics, where the mechanical modes of a suspended slab interact via radiation pressure with the optical field of a high finesse cavity. The reflectivity and transmission properties of a defect-free suspended PCS around normal incidence can be used to couple out-of-plane mechanical modes to an optical field by integrating it in a free space cavity. Here, we demonstrate the successful implementation of a PCS reflector on a high-tensile stress Si$_3$N$_4$ nanomembrane. We illustrate the physical process underlying the high reflectivity by measuring the photonic crystal band diagram. Moreover, we introduce a clear theoretical description of the membrane scattering properties in the presence of optical losses. By embedding the PCS inside a high-finesse cavity, we fully characterize its optical properties. The spectrally, angular, and polarization resolved measurements demonstrate the wide tunability of the membrane's reflectivity, from nearly 0 to 99.9470~$\pm$ 0.0025 \%, and show that material absorption is not the main source of optical loss. Moreover, the cavity storage time demonstrated in this work exceeds the mechanical period of low-order mechanical drum modes. This so-called resolved sideband condition is a prerequisite to achieve quantum control of the mechanical resonator with light.

We present a novel experimental technique that can differentiate unequivocally between chaotic light and coherent light with amplitude fluctuations, and thus permits to characterize unambiguously the output of a laser. This technique consists of measuring the second-order intensity cross-correlation at the outputs of an unbalanced Michelson interferometer. It is applied to a chaotic light source and to the output of a semiconductor nanolaser whose "standard" intensity correlation function above-threshold displays values compatible with a mixture of coherent and chaotic light. Our experimental results demonstrate that the output of such lasers is not partially chaotic but is indeed a coherent state with amplitude fluctuations., Comment: 5 pages, 3 figures

The optical properties of single InAsP/InP quantum dots are investigated by spectrally-resolved and time-resolved photoluminescence measurements as a function of excitation power. In the short-wavelength region (below 1.45 $\mu$m), the spectra display sharp distinct peaks resulting from the discrete electron-hole states in the dots, while in the long-wavelength range (above 1.45 $\mu$m), these sharp peaks lie on a broad spectral background. In both regions, cascade emission observed by time-resolved photoluminescence confirms that the quantum dots possess discrete exciton and multi-exciton states. Single photon emission is reported for the dots emitting at 1.3 $\mu$m through anti-bunching measurements.

We report on the higher-order photon correlations of a high-$\beta$ nanolaser under pulsed excitation at room temperature. Using a multiplexed four-element superconducting single photon detector we measured g$^{(n)}(\vec{0})$ with $n$=2,3,4. All orders of correlation display partially chaotic statistics, even at four times the threshold excitation power. We show that this departure from coherence and Poisson statistics is due to the quantum fluctuations associated with the small number of dipoles and photons involved in the lasing process.

Periodically structured materials can sustain both optical and mechanical modes. Here we investigate and observe experimentally the optomechanical properties of a conventional two-dimensional suspended photonic crystal defect cavity with a mode volume of $\sim$$3(\lambda/n)^{3}$. Two families of mechanical modes are observed: flexural modes, associated to the motion of the whole suspended membrane, and localized modes with frequencies in the GHz regime corresponding to localized phonons in the optical defect cavity of diffraction-limited size. We demonstrate direct measurements of the optomechanical vacuum coupling rate using a frequency calibration technique. The highest measured values exceed 250 kHz, demonstrating strong coupling of optical and mechanical modes in such structures., Comment: 11 Pages, 8 Figures

A novel metal-coated nanocylinder-cavity architecture fully compatible with III-V GaInAs technology and benefiting from a broad spectral range enhancement of the localdensity- of-states is proposed as an integrated source of non-classical light. Due to a judicious selection of the mode volume, the cavity combines good collection efficiency (\gg 45%), large Purcell factors (\gg 15) over a 80-nm spectral range, and a low sensitivity to inevitable spatial mismatches between the single emitter and the cavity mode. This represents a decisive step towards the implementation of reliable solid-state devices for the generation of entangled photon pairs at infrared wavelengths.

Nanoscale lasers sustain few optical modes so that the fraction of spontaneous emission $\beta$ funnelled into the useful (lasing) mode is high (of the order of few 10$^{-1}$) and the threshold, which traditionally corresponds to an abrupt kink in the light in- light out curve, becomes ill-defined. We propose an alternative definition of the threshold, based on the dynamical response of the laser, which is valid even for $\beta=1$ lasers. The laser dynamics is analyzed through a reconstruction of its phase-space trajectory for pulsed excitation. Crossing the threshold brings about a change in the shape of the trajectory and in the area contained in it. An unambiguous definition of the threshold in terms of this change is shown theoretically and illustrated experimentally in a photonic crystal laser.

We report on lasing at room temperature and at telecommunications wavelength from photonic crystal nanocavities based on InAsP/InP quantum dots. Such laser cavities with a small modal volume and high quality factor display a high spontaneous emission coupling factor beta. Lasing is confirmed by measuring the second order autocorrelation function. A smooth transition from chaotic to coherent emission is observed, and coherent emission is obtained at 8 times the threshold power.

We report on the control of the spontaneous emission dynamics from InAsP self-assembled quantum dots emitting in the telecommunications C-band and weakly coupled to the mode of a double heterostructure cavity etched on a suspended InP membrane at room temperature. The quality factor of the cavity mode is 44x10^3 with an ultra-low modal volume of the order of 1.2 lambda/n)^3, inducing an enhancement of the spontaneous emission rate of up a factor of 2.8 at 300 K.

We report on a series of experiments on the dynamics of spontaneous emission controlled nanolasers. The laser cavity is a photonic crystal slab cavity, embedding self-assembled quantum dots as gain material. The implementation of cavity electrodynamics effects increases significantly the large signal modulation bandwidth, with measured modulation speeds of the order of 10 GHz while keeping an extinction ratio of 19 dB. A linear transient wavelength shift is reported, corresponding to a chirp of less than 100 pm for a 35-ps laser pulse. We observe that the chirp characteristics are independent of the repetition rate of the laser up to 10 GHz.

We report on the theoretical investigation of photonic crystal cavities etched on a suspended membrane for the generation of polarization entangled photon pairs using the biexciton cascade in a single quantum dot. The implementation of spontaneous emission enhancement effect increases the entanglement visibility, while the concomitant preferential funneling of the emission in the cavity mode increases the collection of both entangled photons. We demonstrate and quantify that standard cavity designs present a polarization dependent emission diagram, detrimental to entanglement. The optimization of H1 cavities allows to obtain both high collection efficiencies and polarization independent emission, while keeping high Purcell factors necessary for high quality entangled photon sources.

The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 $\mu$m, is investigated by means of time-resolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from 1 ns at low temperature to reach 4 ns at 300K while the integrated photoluminescence intensity decreases only by a factor of 2/3. These characteristics give evidence that such InAsP/InP quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated non-radiative recombination up to room temperature.

We theoretically investigate the joint photodetection probabilities of the biexciton-exciton cascade in single semiconductor quantum dots and analytically derive the density matrix and the Bell's inequalities of the entangled state. Our model includes different mechanisms that may spoil or even destroy entanglement such as dephasing, energy splitting of the relay excitonic states and incoherent population exchange between these relay levels. We explicitly relate the fidelity of entanglement to the dynamics of these processes and derive a threshold for violation of Bell's inequalities. Applied to standard InAs/GaAs self-assembled quantum dots, our model indicates that spontaneous emission enhancement of the excitonic states by cavity effects increases the fidelity of entanglement to a value allowing for violation of Bell's inequalities., Comment: Accepted Phys. Rev. A

We report on a scheme for the creation of time-bin entangled states out of two subsequent single photons. Both photons arrive on the same input port of a beamsplitter and the situation in which the photons leave the beamsplitter on different output ports is post-selected. We derive a full quantum mechanical analysis of such time-bin entanglement for emitters subject to uncorrelated dephasing processes and apply this model to sequential single photons emerging from a single semiconductor quantum dot. Our results indicate that the visibility of entanglement is degraded by decoherence effects in the quantum dot, but can be restored by use of CQED effects, namely the Purcell effect., Comment: Accepted EPJD