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The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a long-time challenge, since different material properties lead to high defect densities in the epitaxial layers. In recent years, nanostructures however have shown to be suitable for successfully realising light emitters on silicon, taking advantage of their geometry. Facet edges and sidewalls can minimise or eliminate the formation of dislocations, and due to the reduced contact area, nanostructures are little affected by dislocation networks. Here we demonstrate the potential of indium phosphide quantum dots as efficient light emitters on CMOS-compatible silicon substrates, with luminescence characteristics comparable to mature devices realised on III-V substrates. For the first time, electrically driven single-photon emission on silicon is presented, meeting the wavelength range of silicon avalanche photo diodes' highest detection efficiency.

Single lateral InGaAs quantum dot molecules have been embedded in a planar micro-cavity in order to increase the luminescence extraction efficiency. Using a combination of metal-organic vapor phase and molecular beam epitaxy samples could be produced that exhibit a 30 times enhanced single-photon emission rate. We also show that the single-photon emission is fully switchable between two different molecular excitonic recombination energies by applying a lateral electric field. Furthermore, the presence of a polarization fine-structure splitting of the molecular neutral excitonic states is reported which leads to two polarization-split classically correlated biexciton exciton cascades. The fine-structure splitting is found to be on the order of 10 micro-eV., Comment: 14 pages, 4 figures; the following article has been submitted to Journal of Applied Physics (29th ICPS - invited paper); after it is published, it will be found at http://jap.aip.org/

A design study was made of the potassium topping cycle powerplant for central station use. Initially, powerplant performance and economics were studied parametrically by using an existing steam plant as the bottom part of the cycle. Two distinct powerplants were identified which had good thermodynamic and economic performance. Conceptual designs were made of these two powerplants in the 1200 MWe size, and capital and operating costs were estimated for these powerplants. A technical evaluation of these plants was made including conservation of fuel resources, environmental impact, technology status, and degree of development risk. It is concluded that the potassium topping cycle could have a significant impact on national goals such as air and water pollution control and conservation of natural resources because of its higher energy conversion efficiency.

Condensate removal devices for potassium vapor Rankine space power turbines to prevent blade erosion and efficiency degradation

Digital data acquisition system records steady state and dynamic data of bearing and shaft displacement. Elliptical orbits formed can be reconstructed and the data reduced automatically. System also reads pressures, temperatures, flows, and torque during any one data scan.

Hydrodynamic journal bearing test and analysis

Two stage turbine suitable for use in wet potassium vapor at temperatures of 1400 to 1600 deg F

Metallurgical and fluid dynamic results of 2000-hr endurance test at high temperatures on two-stage 200 hp turbine in wet potassium vapor

Hydrodynamic journal bearing instrumentation program

Fabrication and testing of hydrodynamic journal bearing for spacecraft power system

Potassium vapor turbine converging-diverging nozzle expansion process, polytropic exponent and critical flow experimental determination

Vapor pressure and flow rate measuring apparatus for potassium vapor turbine