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Your search keyword '"Rius, Gemma [0000-0003-0552-1043]"' showing total 6 results
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6 results on '"Rius, Gemma [0000-0003-0552-1043]"'

1. Spectrometric performance of SiC radiation detectors at high temperature

Author

Ministerio de Ciencia, Innovación y Universidades (España), Agencia Estatal de Investigación (España), European Commission, Junta de Andalucía, Ministerio de Ciencia e Innovación (España), Jiménez-Ramos, M. C. [0000-0001-7109-1040], Rodríguez-Ramos, M. [0000-0002-0791-5196], Viezzer, Eleonora [0000-0001-6419-6848], Pellegrini, Giulio [0000-0002-1606-3546], Rafí, J. M. [0000-0003-4581-9477], Rius, Gemma [0000-0003-0552-1043], García López, J. [0000-0003-4107-4383], Jiménez-Ramos, M. C., García-Osuna, Adrián, Rodríguez-Ramos, M., Viezzer, Eleonora, Pellegrini, Giulio, Godignon, Philippe, Rafí, J. M., Rius, Gemma, García López, J., Ministerio de Ciencia, Innovación y Universidades (España), Agencia Estatal de Investigación (España), European Commission, Junta de Andalucía, Ministerio de Ciencia e Innovación (España), Jiménez-Ramos, M. C. [0000-0001-7109-1040], Rodríguez-Ramos, M. [0000-0002-0791-5196], Viezzer, Eleonora [0000-0001-6419-6848], Pellegrini, Giulio [0000-0002-1606-3546], Rafí, J. M. [0000-0003-4581-9477], Rius, Gemma [0000-0003-0552-1043], García López, J. [0000-0003-4107-4383], Jiménez-Ramos, M. C., García-Osuna, Adrián, Rodríguez-Ramos, M., Viezzer, Eleonora, Pellegrini, Giulio, Godignon, Philippe, Rafí, J. M., Rius, Gemma, and García López, J.

Abstract

In this work, we have investigated the performance of a 4H–SiC radiation sensor in the temperature range from 25 °C to 450 °C to explore its compatibility as detector of fast ion losses in plasma diagnostic of future nuclear fusion reactors. To simulate the escape of fusion-born alpha particles in D-T (deuterium-tritium) fusion plasmas, spectroscopic measurements were carried out in a vacuum chamber by irradiating the detector with a 3.5 MeV alpha beam from a Tandem accelerator. The detector was found to have an energy resolution ≤2% over the entire temperature range analyzed. Relevantly, the excellent spectrometric capabilities of the device have allowed us to calculate from experimental data, with unprecedented accuracy, the average energy required to create a single electron-hole pair in 4H–SiC as a function of temperature.

Published
2024

2. Method for exfoliating and transferring graphene from a doped silicon carbide substrate to another substrate

Author

Rius, Gemma [0000-0003-0552-1043], Godignon, Philippe [0000-0002-9273-9819], Villa Sanz, Rosa [0000-0003-2735-3204], Prats Alfonso, Elisabet [0000-0002-7320-1896], Rius, Gemma, Godignon, Philippe, Villa, Rosa, Prats Alfonso, Elisabet, Rius, Gemma [0000-0003-0552-1043], Godignon, Philippe [0000-0002-9273-9819], Villa Sanz, Rosa [0000-0003-2735-3204], Prats Alfonso, Elisabet [0000-0002-7320-1896], Rius, Gemma, Godignon, Philippe, Villa, Rosa, and Prats Alfonso, Elisabet

Abstract

The present invention refers to a method for exfoliating and transferring graphene from a doped silicon carbide substrate to another substrate, the method being based on exfoliation induced by hydrogen bubbles produced in the electrolysis of water

Published
2021

3. Method for exfoliating and transferring graphene from a doped silicon carbide substrate to another substrate

Author

Rius, Gemma [0000-0003-0552-1043], Godignon, Philippe [0000-0002-9273-9819], Villa Sanz, Rosa [0000-0003-2735-3204], Prats Alfonso, Elisabet [0000-0002-7320-1896], Rius, Gemma, Godignon, Philippe, Villa, Rosa, Prats Alfonso, Elisabet, Rius, Gemma [0000-0003-0552-1043], Godignon, Philippe [0000-0002-9273-9819], Villa Sanz, Rosa [0000-0003-2735-3204], Prats Alfonso, Elisabet [0000-0002-7320-1896], Rius, Gemma, Godignon, Philippe, Villa, Rosa, and Prats Alfonso, Elisabet

Abstract

The present invention refers to a method for exfoliating and transferring graphene from a doped silicon carbide substrate to another substrate, the method being based on exfoliation induced by hydrogen bubbles produced in the electrolysis of water

Published
2019

4. Procedimiento de exfoliación y transferencia de grafeno de un sustrato de carburo de silicio dopado a otro sustrato

Author

Rius, Gemma [0000-0003-0552-1043], Godignon, Philippe [0000-0002-9273-9819], Villa Sanz, Rosa [0000-0003-2735-3204], Prats Alfonso, Elisabet [0000-0002-7320-1896], Rius, Gemma, Godignon, Philippe, Villa, Rosa, Prats Alfonso, Elisabet, Rius, Gemma [0000-0003-0552-1043], Godignon, Philippe [0000-0002-9273-9819], Villa Sanz, Rosa [0000-0003-2735-3204], Prats Alfonso, Elisabet [0000-0002-7320-1896], Rius, Gemma, Godignon, Philippe, Villa, Rosa, and Prats Alfonso, Elisabet

Abstract

Procedimiento de exfoliación y transferencia de grafeno de un sustrato de carburo de silicio dopado a otro sustrato La presente invención se refiere a un procedimiento de exfoliación y transferencia de grafeno de un sustrato de carburo de silicio dopado a otro sustrato, donde dicho procedimiento se basa en su exfoliación inducida por el burbujeo de hidrógeno que se produce en la electrolisis del agua

Published
2018

5. Method for exfoliating and transferring graphene from a doped silicon carbide substrate to another substrate

Author

Rius, Gemma, Godignon, Philippe, Villa, Rosa, Prats Alfonso, Elisabet, Rius, Gemma [0000-0003-0552-1043], Godignon, Philippe [0000-0002-9273-9819], Villa Sanz, Rosa [0000-0003-2735-3204], Prats Alfonso, Elisabet [0000-0002-7320-1896], Rius, Gemma, Godignon, Philippe, Villa Sanz, Rosa, and Prats Alfonso, Elisabet

Abstract

The present invention relates to a method for exfoliating and transferring graphene from a doped silicon carbide substrate to another substrate, the method being based on exfoliation induced by hydrogen bubbles produced in the electrolysis of water. [EN], La presente invención se refiere a un procedimiento de exfoliación y transferencia de grafeno de un sustrato de carburo de silicio dopado a otro sustrato, donde dicho procedimiento se basa en su exfoliación inducida por el burbujeo de hidrógeno que se produce en la electrolisis del agua. [ES], Consejo Superior de Investigaciones Científicas (España), Centro de Investigación Biomédica en Red (CIBER), A1 Solicitud de patente con informe sobre el estado de la técnica

Published
2017

6. Method for exfoliating and transferring graphene from a doped silicon carbide substrate to another substrate

Author

Rius, Gemma, Godignon, Philippe, Villa, Rosa, Prats Alfonso, Elisabet, Rius, Gemma [0000-0003-0552-1043], Godignon, Philippe [0000-0002-9273-9819], Villa Sanz, Rosa [0000-0003-2735-3204], Prats Alfonso, Elisabet [0000-0002-7320-1896], Rius, Gemma, Godignon, Philippe, Villa Sanz, Rosa, and Prats Alfonso, Elisabet

Abstract

La presente invención se refiere a un procedimiento de exfoliación y transferencia de grafeno de un sustrato de carburo de silicio dopado a otro sustrato, donde dicho procedimiento se basa en su exfoliación inducida por el burbujeo de hidrógeno que se produce en la electrolisis del agua. [ES], The present invention relates to a method for exfoliating and transferring graphene from a doped silicon carbide substrate to another substrate, the method being based on exfoliation induced by hydrogen bubbles produced in the electrolysis of water. [EN], Consejo Superior de Investigaciones Científicas (España), Centro de Investigación Biomédica en Red (CIBER), A1 Solicitud de patente con informe sobre el estado de la técnica

Published
2016

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