Search

Multi-junction solar cells constitute the main source of power for space applications. However, exposure of solar cells to the space radiation environment significantly degrades their performance across the mission lifetime. Here, we seek to improve the radiation hardness of the triple junction solar cell, GaInP/Ga(In)As/Ge, by decreasing the thickness of the more sensitive middle junction. Thin junctions facilitate the collection of minority carriers and show slower degradation due to defects. However, thinning the junction decreases the absorption, and consequently, the expected photocurrent. To compensate for this loss, we examined two bioinspired surface patterns that exhibit anti-reflective and light-trapping properties: (a) the moth-eye structure which enables vision in poorly illuminated environments and (b) the patterns of the hard cell of a unicellular photosynthetic micro-alga, the diatoms. We parametrize and optimize the biomimetic structures, aiming to maximize the absorbed light by the solar cell while achieving significant reduction in the middle junction thickness. The density of the radiation-induced defects is independent of the junction thickness, as we demonstrate using Monte Carlo simulations, allowing the direct comparison of different combinations of middle junction thicknesses and light trapping structures. We incorporate the radiation effects into the solar cell model as a decrease in minority carrier lifetime and an increase in surface recombination velocity, and we quantify the gain in efficiency for different combinations of junction thickness and the light-trapping structure at equal radiation damage. Solar cells with thin junctions compensated by the light-trapping structures offer a promising approach to improve solar cell radiation hardness and robustness, with up to 2% higher end-of-life efficiency than the commonly used configuration at high radiation exposure., (Creative Commons Attribution license.)

The efficiency of photovoltaic modules in the field is generally lower than the efficiency under standard testing conditions due to temperature and spectral effects. Using the latest spectral dataset available from the National Solar Radiation Database, we report spectral correction factors ranging from -2% to 1.3% of the produced energy for silicon modules depending on location and collector geometry. We find that spectral effects favor trackers if silicon modules are used, but favor a fixed tilt instead if perovskites or CdTe are used. In high-irradiance locations, the energy yield advantage of silicon-based trackers is underestimated by 0.4% if spectral sensitivity effects are neglected. As the photovoltaic market grows to a multi-terawatt size, these seemingly small effects are expected to have an economic impact equivalent to tens of billions of dollars in the next few decades, far outweighting the cost of the required research effort., Competing Interests: The authors declare no competing interests., (© 2020 The Author(s).)

Due to spectral sensitivity effects, using a single standard spectrum leads to a large uncertainty when estimating the yearly averaged photovoltaic efficiency or energy yield. Here we demonstrate how machine learning techniques can reduce the yearly spectral sets by three orders of magnitude to sets of a few characteristic spectra, and use the resulting proxy spectra to find the optimal solar cell designs maximizing the yearly energy production. When using standard conditions, our calculated efficiency limits show good agreement with current photovoltaic efficiency records, but solar cells designed for record efficiency under the current standard spectra are not optimal for maximizing the yearly energy yield. Our results show that more than 1 MWh m -2  year -1 can realistically be obtained from advanced multijunction systems making use of the direct, diffuse, and back-side albedo components of the irradiance.

The moth-eye structure has been proposed several times as an antireflective coating to replace the standard optical thin films. Here, we experimentally demonstrate the feasibility of a dielectric moth-eye structure as an antireflective coating for high-index substrates, like GaAs. The fabricated photonic crystal has Si 3 N 4 cones in a square lattice, sitting on top of a TiO 2 index matching layer. This structure attains 1.4% of reflectance power losses in the operation spectral range of GaAs solar cells (440-870 nm), a 12.5% relative reduction of reflection power losses in comparison with a standard bilayer. The work presented here considers a fabrication process based on laser interference lithography and dry etching, which are compatible with solar cell devices. The experimental results are consistent with scattering matrix simulations of the fabricated structures. In a broader spectral range (400-1800 nm), the simulation estimates that the nanostructure also significantly outperforms the standard bilayer coating (3.1% vs. 4.5% reflection losses), a result of interest for multijunction tandem solar cells.

Electrical contacts on the top surface of solar cells and light emitting diodes cause shadow losses. The phenomenon of extraordinary optical transmission through arrays of subwavelength holes suggests the possibility of engineering such contacts to reduce the shadow using plasmonics, but resonance effects occur only at specific wavelengths. Here we describe instead a broadband effect of enhanced light transmission through arrays of subwavelength metallic wires, due to the fact that, in the absence of resonances, metal wires asymptotically tend to invisibility in the small size limit regardless of the fraction of the device area taken up by the contacts. The effect occurs for wires more than an order of magnitude thicker than the transparency limit for metal thin films. Finite difference in time domain calculations predict that it is possible to have high cloaking efficiencies in a broadband wavelength range, and we experimentally demonstrate contact shadow losses less than half of the geometric shadow.

Broadband solar cell antireflection coatings made of nano-cones are studied in square lattices of ZnS, TiO(2) and Si(3)N(4). In the best case, the spectrally integrated transmittance (accounting for both reflection and dielectric absorption losses) for direct solar radiation is 99 %, which represents a four-fold decrease in transmission losses in comparison to a standard antireflective coating bilayer. The dependence of the transmission as a function of nanostructure dimensions is studied, showing a wide maximum, thus leading to a high tolerance for manufacturing errors. This high transmittance is also robust against deviations from normal incidence. Our analysis suggests that the high transmittance is due not only to an effective gradual index effect, but is also due to light coupling to quasiguided modes in the photonic crystal leaking mostly towards the substrate.

We demonstrate a new class of semiconductor device: the optically triggered infrared photodetector (OTIP). This photodetector is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. Our experimental device, fabricated using InAs/AlGaAs quantum-dot technology, demonstrates normal incidence infrared detection in the 2-6 μm range. The detection is optically triggered by a 590 nm light-emitting diode. Furthermore, the detection gain is achieved in our device without an increase of the noise level. The novel characteristics of OTIPs open up new possibilities for third generation infrared imaging systems ( Rogalski, A.; Antoszewski, J.; Faraone, L. J. Appl. Phys. 2009, 105 (9), 091101).

Unambiguous evidence of ring-shaped self-assembled GaSb nanostructures grown by molecular beam epitaxy is presented on the basis of atom-probe tomography reconstructions and dark field transmission electron microscopy imaging. The GaAs capping process causes a strong segregation of Sb out of the center of GaSb quantum dots, leading to the self-assembled GaAs(x)Sb(1-x) quantum rings of 20-30 nm in diameter with x ∼ 0.33., (Copyright © 2011 Elsevier B.V. All rights reserved.)

The addition of antimony to III-V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.

A compact minicryostat has been well adapted on the hard x-ray microprobe ID22 of the European Synchrotron Radiation Facility. For variable low-temperature investigations, its special technical design provides precise scanning microscopy and allows easy access for multiple detection modes. Based on x-ray excited optical luminescence technique on the micrometer scale, details of the equipment, its temperature calibration, and typical results are described. Data collections from InAs quantum heterostructures support the excellent thermal performance of the novel cryogenic device.

The various components in the N 1s photoemission spectra of amorphous carbon nitride are identified by measuring their photon energy dependence and comparing the experimental results with ab initio multiple scattering calculations. The intensity modulations with photon energy are due to the extended x-ray absorption fine structure effects.