116 results on '"Rincon-Delgadillo, Paulina"'
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2. Single mask solution to pattern DRAM LILP layer at 42nm pitch using EUV car photoresist
3. Litho process development for pillars to enable high density 4f2 memory cells at 34nm pitch
4. BEOL N2: M2 through SAxP process from MP21 to MP26: 193i SAQP vs EUV SADP
5. Improved methodology for prediction of 'merged contact hole' defect process window
6. Molecular pathways for defect annihilation in directed self-assembly
7. High throughput grating qualification of directed self-assembly patterns using optical metrology
8. 28 nm pitch of line/space pattern transfer into silicon substrates with chemo-epitaxy Directed Self-Assembly (DSA) process flow
9. EUV mask defect inspection for the 3nm technology node
10. Outlier analysis for understanding process variations and probable defects
11. Improved methodology for prediction of merged contact hole defect process window
12. Understanding Kinetics of Defect Annihilation in Chemoepitaxy-Directed Self-Assembly
13. Massive e-beam metrology and inspection for analysis of EUV stochastic defect
14. Influence of Additives on the Interfacial Width and Line Edge Roughness in Block Copolymer Lithography
15. EUV mask defect inspection for the 3nm technology node.
16. Outlier analysis for understanding process variations and probable defects
17. Kinetic approach to defect reduction in directed self-assembly
18. Orientation control of high-χ triblock copolymer for sub-10 nm patterning using fluorine-containing polymeric additives
19. Impact of sequential infiltration synthesis (SIS) on roughness and stochastic nano-failures for EUVL patterning
20. Kinetics of defect annihilation in chemo-epitaxy directed self-assembly
21. Engineering the Kinetics of Directed Self-Assembly of Block Copolymers toward Fast and Defect-Free Assembly
22. Ionic Liquids as Additives to Polystyrene-Block-Poly(Methyl Methacrylate) Enabling Directed Self-Assembly of Patterns with Sub-10 nm Features
23. Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures
24. A progress report on DSA of high-chi silicon containing block co-polymers (Conference Presentation)
25. Studying the effects of chemistry and geometry on DSA hole-shrink process in three dimensions
26. Directed self-assembly of triblock copolymers for sub-10 nm nanofabrication using polymeric additives
27. Impact of annealing temperature on DSA process: toward faster assembly kinetics (Conference Presentation)
28. Impact of Sequential Infiltration Synthesis (SIS) on roughness and stochastic nano-failures for EUVL patterning.
29. Directed self-assembly enabled fully self-aligned via processing (Conference Presentation)
30. Enabling CD SEM metrology for 5nm technology node and beyond
31. Design of surface patterns with optimized thermodynamic driving forces for the directed self-assembly of block copolymers in lithographic applications
32. Sequential Infiltration Synthesis for Line Edge Roughness Mitigation of EUV Resist
33. Evolution of roughness during the pattern transfer of high-chi, 10 nm half-pitch, silicon-containing block copolymer structures.
34. Directed Self-Assembly of Triblock Copolymers for Sub-10 nm Nanofabrication Using Polymeric Additives.
35. Studying the Effects of Chemistry and Geometry on DSA Hole-shrink Process in Three Dimensions.
36. Integration of a templated directed self-assembly-based hole shrink in a short loop via chain
37. Characterization of the shape and line-edge roughness of polymer gratings with grazing incidence small-angle X-ray scattering and atomic force microscopy
38. Directed self-assembly of PS-b-PMMA with ionic liquid addition
39. Three-Tone Chemical Patterns for Block Copolymer Directed Self-Assembly
40. Ionic Liquid for Directed Self-Assembly of PS-b-PMMA
41. BEOL N2: M2 through SAxP process from MP21 to MP26: 193i SAQP vs EUV SADP.
42. Improved methodology for prediction of merged contact hole defect process window.
43. Impact of sequential infiltration synthesis (SIS) on roughness and stochastic nano-failures for EUVL patterning
44. Kinetics of defect annihilation in chemo-epitaxy directed self-assembly
45. Defect mitigation and root cause studies in 14 nm half-pitch chemo-epitaxy directed self-assembly LiNe flow
46. The effects of geometry and chemistry of nanopatterned substrates on the directed self-assembly of block-copolymer melts
47. Grazing-incidence small angle x-ray scattering studies of nanoscale polymer gratings
48. Defect mitigation and root cause studies in IMEC's 14nm half-pitch chemo-epitaxy DSA flow
49. Inspection of directed self-assembly defects
50. Investigation of cross-linking poly(methyl methacrylate) as a guiding material in block copolymer directed self-assembly
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