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2. Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor

Author

Massachusetts Institute of Technology. Microsystems Technology Laboratories, Sood, Ashok K., Richwine, Robert A., Puri, Yash R., DiLello, Nicole Ann, Hoyt, Judy L., Akinwande, Tayo I., Dhar, Nibir, Horn, Stuart, Balcerak, Raymond S., Bramhall, Thomas G., Massachusetts Institute of Technology. Microsystems Technology Laboratories, Sood, Ashok K., Richwine, Robert A., Puri, Yash R., DiLello, Nicole Ann, Hoyt, Judy L., Akinwande, Tayo I., Dhar, Nibir, Horn, Stuart, Balcerak, Raymond S., and Bramhall, Thomas G.

Abstract

SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper will discuss performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We will present results on the approach and device design for reducing the dark current in SiGe detector arrays. We will discuss electrical and optical properties of SiGe arrays at room temperature and as a function of temperature. We will also discuss future integration path for SiGe devices with Si-MEMS Bolometers. © 2010 Copyright SPIE - The International Society for Optical Engineering.

Published
2021

3. Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor

Author

Sood, Ashok K., Richwine, Robert A., Puri, Yash R., DiLello, Nicole, Hoyt, Judy L., Akinwande, Tayo I., Dhar, Nibir, Horn, Stuart, Balcerak, Raymond S., Bramhall, Thomas G., Sood, Ashok K., Richwine, Robert A., Puri, Yash R., DiLello, Nicole, Hoyt, Judy L., Akinwande, Tayo I., Dhar, Nibir, Horn, Stuart, Balcerak, Raymond S., and Bramhall, Thomas G.

Abstract

SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper will discuss performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We will present results on the approach and device design for reducing the dark current in SiGe detector arrays. We will discuss electrical and optical properties of SiGe arrays at room temperature and as a function of temperature. We will also discuss future integration path for SiGe devices with Si-MEMS Bolometers. © 2010 Copyright SPIE - The International Society for Optical Engineering.

Published
2021

6. Characterization of sige-detector arrays for visible-NIR imaging sensor applications

Author

Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology. Microsystems Technology Laboratories, DiLello, Nicole Ann, Hoyt, Judy L., Akinwande, Tayo I., Sood, Ashok K., Richwine, Robert A., Sood, Adam W., Puri, Yash R., Dhar, Nibir, Balcerak, Raymond S., Bramhall, Thomas G., Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology. Microsystems Technology Laboratories, DiLello, Nicole Ann, Hoyt, Judy L., Akinwande, Tayo I., Sood, Ashok K., Richwine, Robert A., Sood, Adam W., Puri, Yash R., Dhar, Nibir, Balcerak, Raymond S., and Bramhall, Thomas G.

Abstract

SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We present results on the approach and device design for reducing the dark current in SiGe detector arrays. The electrical and optical properties of SiGe arrays at room temperature are discussed. We also discuss future integration path for SiGe devices with Si-MEMS Bolometers.

Published
2012

7. Development of SiGe arrays for visible-near IR imaging applications

Author

Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Hoyt, Judy L., DiLello, Nicole Ann, Sood, Ashok K., Richwine, Robert A., Puri, Yash R., Dhar, Nibir, Balcerak, Raymond S., Bramhall, Thomas G., Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Hoyt, Judy L., DiLello, Nicole Ann, Sood, Ashok K., Richwine, Robert A., Puri, Yash R., Dhar, Nibir, Balcerak, Raymond S., and Bramhall, Thomas G.

Abstract

SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper will discuss performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We will present results on the approach and device design for reducing the dark current in SiGe detector arrays. We will discuss electrical and optical properties of SiGe arrays at room temperature and as a function of temperature. We will also discuss future integration path for SiGe devices with other Silicon-based technology for defense and Commercial Applications.

Published
2011

8. Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor

Author

Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology. Microsystems Technology Laboratories, Hoyt, Judy L., DiLello, Nicole Ann, Akinwande, Tayo I., Sood, Ashok K., Richwine, Robert A., Puri, Yash R., Horn, Stuart, Balcerak, Raymond S., Venkatasubramanian, Rama, Bulman, Gary, D'Souza, Arvind I., Baramhall, Thomas G., Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology. Microsystems Technology Laboratories, Hoyt, Judy L., DiLello, Nicole Ann, Akinwande, Tayo I., Sood, Ashok K., Richwine, Robert A., Puri, Yash R., Horn, Stuart, Balcerak, Raymond S., Venkatasubramanian, Rama, Bulman, Gary, D'Souza, Arvind I., and Baramhall, Thomas G.

Abstract

SiGe based Focal Plane Arrays offer a low cost alternative for developing visible- NIR focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based IRFPA's will take advantage of Silicon based technology, that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses performance comparison for the SiGe based VIS-NIR Sensor with performance characteristics of InGaAs, InSb, and HgCdTe based IRFPA's. Various approaches including device designs are discussed for reducing the dark current in SiGe detector arrays; these include Superlattice, Quantum dot and Buried junction designs that have the potential of reducing the dark current by several orders of magnitude. The paper also discusses approaches to reduce the leakage current for small detector size and fabrication techniques. In addition several innovative approaches that have the potential of increasing the spectral response to 1.8 microns and beyond.

Published
2010

9. Development of III-N UVAPDs for ultraviolet sensor applications

Author

Sood, Ashok K., primary, Richwine, Robert A., additional, Welser, Roger E., additional, Puri, Yash R., additional, Dupuis, Russell D., additional, Ji, Mi-Hee, additional, Kim, Jeomoh, additional, Detchprohm, Theeradetch, additional, Dhar, Nibir K., additional, and Peters, Roy L., additional

Published
2013
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13. Nanostructure-based EO/IR focal plane array development for unattended ground sensor applications

Author

Sood, Ashok K., primary, Egerton, E. James, additional, Richwine, Robert A., additional, Puri, Yash R., additional, Manzur, Tariq, additional, Dhar, Nibir K., additional, Polla, Dennis L., additional, Wang, Zhong L., additional, Fernandes, Gustavo E., additional, Xu, Jimmy, additional, Wijewarnasuriya, Priyalal S., additional, and Anwar, A. F. M., additional

Published
2011
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17. Next generation nanostructure-based EO/IR focal plane arrays for unattended ground sensor applications

Author

Sood, Ashok K., primary, Richwine, Robert A., additional, Puri, Yash R., additional, Manzur, Tariq, additional, Dhar, Nibir K., additional, Polla, Dennis L., additional, Wijewarnasuriya, Priyalal S., additional, Wei, Yaguang, additional, Zhou, Jun, additional, Li, Cheng, additional, Wang, Zhong L., additional, Fernandes, Gustavo, additional, and Xu, J. M. Jimmy, additional

Published
2010
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18. Design and development of carbon nanostructure-based microbolometers for IR imagers and sensors

Author

Sood, Ashok K., primary, Richwine, Robert A., additional, Puri, Yash R., additional, Akturk, Akin, additional, Goldsman, Neil, additional, Potbhare, Siddharth, additional, Fernandes, Gustavo, additional, Hsu, Chih-Hsun, additional, Kim, Jin Ho, additional, Xu, Jimmy, additional, Dhar, Nibir K., additional, Wijewarnasuriya, Priyalal S., additional, and Lineberry, Bobby I., additional

Published
2010
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21. Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor

Author

Sood, Ashok K., primary, Richwine, Robert A., additional, Puri, Yash R., additional, DiLello, Nicole, additional, Hoyt, Judy L., additional, Akinwande, Tayo I., additional, Horn, Stuart, additional, Balcerak, Ray S., additional, Bulman, Gary, additional, Venkatasubramanian, Rama, additional, D'Souza, Arvind I., additional, and Bramhall, Thomas G., additional

Published
2009
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23. EO/IR sensors development using zinc oxide and carbon nanostructures

Author

Sood, Ashok K., primary, Richwine, Robert A., additional, Puri, Yash R., additional, Polla, Dennis L., additional, Dhar, Nibir K., additional, Wang, Zhong L., additional, Xu, J. M., additional, Wijewarnasuriya, Priyalal S., additional, Goldsman, Neil, additional, Soprano, Martin B., additional, and Lineberry, Bobby, additional

Published
2009
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25. Design considerations for SiGe-based near infrared imaging sensor

Author

Sood, Ashok K., primary, Richwine, Robert A., additional, Puri, Yash R., additional, Olubuyide, Oluwamuyiwa O., additional, DiLello, Nicole, additional, Hoyt, Judy L., additional, Akinwande, Tayo I., additional, Balcerak, Raymond S., additional, Horn, Stuart, additional, Bramhall, Thomas G., additional, and Radack, Daniel J., additional

Published
2008
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37. Maximizing availability may not optimize plant economics

Author

Richwine, Robert R.

Subjects
Frontier thesis -- Analysis, Electric power-plants -- Maintenance and repair, Electric power-plants -- Analysis, Electric power-plants -- Economic aspects, Power plants -- Maintenance and repair, Power plants -- Analysis, Power plants -- Economic aspects, Business, Engineering and manufacturing industries
Abstract

The relationship between operations and maintenance (O&M) spending and power plant performance is examined through Frontier Analysis (FA), in order to improve the overall economics of power plant.

Published
2004

45. Nanostructure-based EO/IR focal plane array development for unattended ground sensor applications

Author

Sood, Ashok K., Egerton, E. James, Richwine, Robert A., Puri, Yash R., Manzur, Tariq, Dhar, Nibir K., Polla, Dennis L., Wang, Zhong L., Fernandes, Gustavo E., Xu, Jimmy, Wijewarnasuriya, Priyalal S., and Anwar, A. F. M.

Abstract

Next Generation EO/IR focal plane arrays using nanostructure materials are being developed for a variety of Defense Applications including Unattended Ground Sensor Applications. Several different nanomaterials are being evaluated for these applications. These include ZnO nanowires that have demonstrated large signal to noise ratio as a wide band gap nanostructure material in the UV band. Similarly, the work is under way using Carbon Nanotubes (CNT) for a high speed detector and focal plane array as bolometer for IR bands of interest, which can be implemented for the unattended ground sensor applications. In this paper, we will discuss the sensor design and model predicting performance of an EO/IR focal plane array that can cover the UV to IR bands of interest. The model can provide a robust means for comparing performance of the EO/IR FPA's and Sensors that can operate in the UV, Visible-NIR (0.4-1.8), SWIR (2.0-2.5), MWIR (3-5), and LWIR bands (8-14). This model can be used as a tool for predicting performance of nanostructure arrays under development. We will also discuss our results on growth and characterization of ZnO nanowires and CNT's for the next generation sensor applications. Several approaches for compact energy harvesting using nanostructures will be discussed.

Published
2011
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47. Characterization of SiGe-detector arrays for visible-NIR imaging sensor applications

Author

Sood, Ashok K., Richwine, Robert A., Sood, Adam W., Puri, Yash R., DiLello, Nicole, Hoyt, Judy L., Akinwande, Tayo I., Dhar, Nibir, Balcerak, Raymond S., and Bramhall, Thomas G.

Abstract

SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We present results on the approach and device design for reducing the dark current in SiGe detector arrays. The electrical and optical properties of SiGe arrays at room temperature are discussed. We also discuss future integration path for SiGe devices with Si-MEMS Bolometers.

Published
2011
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