32 results on '"Rezvanov, Askar"'
Search Results
2. MAIN PROPERTIES OF RHOMBOHEDRAL HAFNIUM DIOXIDE: CALCULATION FROM FIRST PRINCIPLES
3. SIMULATION OF GAS DYNAMICS IN AN INDUCTIVELY COUPLED PLASMA REACTOR FOR PLATES WITH A DIAMETER OF 300 mm
4. Figure 1 from: Orlov AA, Rezvanov AA (2022) Simulation of time to failure of porous dielectric in advanced topology integrated circuit metallization system. Modern Electronic Materials 8(3): 107-111. https://doi.org/10.3897/j.moem.8.3.98145
5. Figure 3 from: Orlov AA, Rezvanov AA (2022) Simulation of time to failure of porous dielectric in advanced topology integrated circuit metallization system. Modern Electronic Materials 8(3): 107-111. https://doi.org/10.3897/j.moem.8.3.98145
6. Figure 2 from: Orlov AA, Rezvanov AA (2022) Simulation of time to failure of porous dielectric in advanced topology integrated circuit metallization system. Modern Electronic Materials 8(3): 107-111. https://doi.org/10.3897/j.moem.8.3.98145
7. Figure 6 from: Orlov AA, Rezvanov AA (2022) Simulation of time to failure of porous dielectric in advanced topology integrated circuit metallization system. Modern Electronic Materials 8(3): 107-111. https://doi.org/10.3897/j.moem.8.3.98145
8. Figure 5 from: Orlov AA, Rezvanov AA (2022) Simulation of time to failure of porous dielectric in advanced topology integrated circuit metallization system. Modern Electronic Materials 8(3): 107-111. https://doi.org/10.3897/j.moem.8.3.98145
9. Figure 4 from: Orlov AA, Rezvanov AA (2022) Simulation of time to failure of porous dielectric in advanced topology integrated circuit metallization system. Modern Electronic Materials 8(3): 107-111. https://doi.org/10.3897/j.moem.8.3.98145
10. Simulation of time to failure of porous dielectric in advanced topology integrated circuit metallization system
11. Modification of Porous Ultralow-k Film by Vacuum Ultraviolet Emission
12. Benzene bridged hybrid organosilicate films with improved stiffness and small pore size
13. Atomic layer deposition of thin films of hafnium oxide using Izofaz TM 200-01 system
14. Methylated porous low-k materials: critical properties and plasma resistance
15. Investigation of conductive filament growth and rupture in ReRAM structures based on hafnium oxide
16. ACCOUNTING OF THE POROSITY OF THE MATERIAL IN THE SIMULATION OF THE TIME-DEPENDENT DIELECTRIC BREAKDOWN IN THE METALLIZATION SYSTEM OF INTEGRATED CIRCUITS
17. SIMULATION OF THE TIME-DEPENDENT DIELECTRIC BREAKDOWN IN THE METALLIZATION SYSTEM OF INTEGRATED CIRCUITS OF THE MODERN TOPOLOGICAL LEVEL
18. INVESTIGATION OF THERMAL EFFECTS IN HfO2 RRAM STRUCTURES DURING THE RESET PROCESS
19. ATOMIC LAYER DEPOSITION OF THIN FILMS OF METAL AND THEIR OXIDES
20. INVESTIGATION OF THE KINETICS OF INTERACTION OF CHEMICALLY ACTIVE PARTICLES WITH THE SILICON SURFACE DURING DEEP CRYOGENIC ETCHING
21. FORMATION OF DIFFUSION BARRIERS IN THE COPPER METALLIZATION SYSTEM IN THE GAP FILLING METHOD
22. Effect of terminal methyl group concentration on critical properties and plasma resistance of organosilicate low-k dielectrics
23. Use of a Thermally Degradable Chemical Vapor Deposited Polymer Film for Low Damage Plasma Processing of Highly Porous Dielectrics
24. Atomic layer deposition of thin films of hafnium oxide using Izofaz TM 200-01 system
25. Investigation of conductive filament growth and rupture in ReRAM structures based on hafnium oxide
26. Cryogenic etching of porous low-k dielectrics in CF3Br and CF4 plasmas
27. Pore surface grafting of porous low-k dielectrics by selective polymers
28. Cellular-automata model of oxygen plasma impact on porous low-K dielectric
29. Cryogenic etching of porous low-k dielectrics in CF3Br and CF4 plasmas.
30. Cellular-automata model of oxygen plasma impact on porous low-K dielectric
31. Atomic layer deposition of thin films of hafnium oxide using Izofaz TM 200-01 system.
32. Investigation of conductive filament growth and rupture in ReRAM structures based on hafnium oxide.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.