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1. A Prospective Clinical Trial to Evaluate Mesothelin as a Biomarker for the Clinical Management of Patients With Esophageal Adenocarcinoma.

Author

Byun, Alexander J., Grosser, Rachel A., Choe, Jennie K., Rizk, Nabil P., Tang, Laura H., Molena, Daniela, Tan, Kay See, Cheema, David Restle M. Waseem, Zhu, Amy, Gerdes, Hans, Markowitz, Arnold J., Bains, Manjit S., Rusch, Valerie W., and Adusumilli, David R. Jones Prasad S.

Abstract

Objective: To investigate the utility of serum soluble mesothelin-related peptide (SMRP) and tumor mesothelin expression in the management of esophageal adenocarcinoma (ADC). Background: Clinical management of esophageal ADC is limited by a lack of accurate evaluation of tumor burden, treatment response, and disease recurrence. Our retrospective data showed that tumor mesothelin and its serum correlate, SMRP, are overexpressed and associated with poor outcomes in patients with esophageal ADC. Methods: Serum SMRP and tumoral mesothelin expression from 101 patients with locally advanced esophageal ADC were analyzed before induction chemoradiation (pretreatment) and at the time of resection (posttreatment), as a biomarker for treatment response, disease recurrence, and overall survival (OS). Results: Pre and posttreatment serum SMRP was ≥1 nM in 49% and 53%, and pre and post-treatment tumor mesothelin expression was >25% in 35% and 46% of patients, respectively. Pretreatment serum SMRP was not significantly associated with tumor stage (P = 0.9), treatment response (radiologic response, P = 0.4; pathologic response, P = 0.7), or recurrence (P=0.229). Pretreatment tumor mesothelin expression was associated with OS (hazard ratio: 2.08; 95% CI: 1.14--3.79; P = 0.017) but had no statistically significant association with recurrence (P = 0.9). Three-year OS of patients with pretreatment tumor mesothelin expression of ≤25% was 78% (95% CI: 68%--89%), compared with 49% (95% CI: 35%--70%) among those with >25%. Conclusions: Pretreatment tumor mesothelin expression is prognostic of OS for patients with locally advanced esophageal ADC, whereas serum SMRP is not a reliable biomarker for monitoring treatment response or recurrence. [ABSTRACT FROM AUTHOR]

Published
2023
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4. Ion implanted dopants in GaN and AIN: lattice sites, annealing behavior, and defect recovery

Author

Ronning, C., Dalmer, M., Uhrmacher, M., Restle, M., Vetter, U., Ziegeler, L., Gehrke, T., Jarrendahl, K., and Davis,. R.F.

Subjects
Blue light -- Research, Condensed matter -- Research, Metallic glasses -- Research, Semiconductors -- Research, Physics
Abstract

A new study investigates the lattice site occupation and behavior of (111)In+ and (89)Sr+ in gallium nitride and aluminum nitride

Published
2000

6. Lattice site location studies of ion implanted (super8)Li in GaN

Author

Dalmer, M., Restle, M., Sebastian, M., Vetter, U., Hofsass, H., Bremser, M.D., Ronning, C., Davis, R.F., Wahl, U., and Bharuth-Ram, K.

Subjects
Lattice theory -- Usage, Ions -- Research, Ion implantation -- Research, Physics
Abstract

Lattice sites of ion implanted Li atoms in GaN have been studied. The channeling and blocking patterns of alpha-particles in the radioactive decay were measured to identify the Li lattice sites. Atoms occupied mostly interstitial sites within the c-axis hexagons, below 700 K. Li begins to diffuse around 700 K, possibly interacting with vacancies resulting from the implantation process.

Published
1998

8. α-Emission channeling studies of the lattice site of oversized atoms implanted in Fe and Ni single crystals

Author

Wachter, J. De, primary, Blässer, S., additional, Hofsäss, H., additional, Jahn, S., additional, Lindroos, M., additional, Moons, R., additional, Pattyn, H., additional, Restle, M., additional, Vantomme, A., additional, Wahl, U., additional, Duppen, P. Van, additional, Collaboration, the ISOLDE, additional, and Langouche, G., additional

Published
1996
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9. Lattice sites of Li in CdTe

Author

Restle, M., primary, Bharuth-Ram, K., additional, Quintel, H., additional, Ronning, C., additional, Hofsäss, H., additional, Wahl, U., additional, and Jahn, S.G., additional

Published
1996
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13. List of contributors

Author

Accomo, R., primary, Achtziger, N., additional, Adams, S.J.A., additional, Akasaki, I., additional, Albert, J.P., additional, Amano, H., additional, André, R., additional, Antonelli, A., additional, Asif Khan, M., additional, Aulombard, R.L., additional, Austin, R.F., additional, Balestrino, G., additional, Baltramiejūnas, R., additional, Bechstedt, F., additional, Bécourt, N., additional, Bergman, L., additional, Bernholc, J., additional, Bertho, D., additional, Bertoni, CM., additional, Billat, S., additional, Boćkowski, M., additional, Bodin, C., additional, Bodin-Deshayes, C., additional, Boiko, E.B., additional, Boring, P., additional, Bouhelal, A., additional, Bratina, G., additional, Brennan, K.F., additional, Briddon, P.R., additional, Briot, O., additional, Broser, I., additional, Bsiesy, A., additional, Bucher, E., additional, Burchard, A., additional, Cantwell, G., additional, Carter, C.H., additional, Castro, T., additional, Cavenett, B.C., additional, Chadi, D.J., additional, Chen, K.M., additional, Chen, X., additional, Cheng, H., additional, Choyke, W.J., additional, Christensen, N.E., additional, Cibert, J., additional, Cingolani, R., additional, Cloitre, T., additional, Cohen, P.I., additional, Collins, A.T., additional, Cotal, H.L., additional, Cricenti, A., additional, Dabbicco, M., additional, Dang, L.S., additional, Davis, R.F., additional, Deicher, M., additional, DePuydt, J.M., additional, Dischler, B., additional, Dmitriev, V.A., additional, Donegan, J.F., additional, Doran, J.P., additional, Dubowski, J.J., additional, Eckey, L., additional, Edmond, J.A., additional, Efros, A.L., additional, Egan, R.J., additional, Engelbrecht, F., additional, Evstropov, W., additional, Fanciulli, M., additional, Feldman, R.D., additional, Felici, A.C., additional, Ferrara, M., additional, Ferrari, L., additional, Ferry, D.K., additional, Feuillet, G., additional, Fiedler, M., additional, Finocchi, F., additional, Fischer, R., additional, Fishman, G., additional, Franciosi, A., additional, Fricke, Ch., additional, Frolov, S.I., additional, Fuchs, D., additional, Galli, G., additional, Gaponenko, S.V., additional, Gaspard, F., additional, Gavrilenko, V.I., additional, Gavryushin, V., additional, Gebhardt, W., additional, Germanenko, I.N., additional, Geurts, J., additional, Geyzers, K.P., additional, Gil, B., additional, Gladfelter, W., additional, Gleitsman, G., additional, Göbel, E.O., additional, Godet, C., additional, Goede, O., additional, Gorczyca, I., additional, Gribkovskii, V.P., additional, Grzegory, I., additional, Gumlich, H.-E., additional, Gunshor, R.L., additional, Gurskii, A.L., additional, Gutowski, J., additional, Gygi, F., additional, Haase, M.A., additional, Haberstroh, C, additional, Harsch, W.C., additional, Hauksson, I., additional, Hayashi, S., additional, Hegarty, J., additional, Heimbrodt, W., additional, Heime, K., additional, Heine, V., additional, Heitz, R., additional, Helbig, R., additional, Henderson, B., additional, Henneberger, F., additional, Hérino, R., additional, Hermans, J., additional, Heuken, M., additional, Hoffmann, A., additional, Hoffmann, H., additional, Hoffmann, N., additional, Hofsäss, H., additional, Humphreys, T.P., additional, Hunt, R.W., additional, Iarlori, S., additional, Iida, S., additional, Ikoma, K., additional, Itie, J.P., additional, Jacobs, K., additional, Jahn, S.G., additional, Jancu, J.M., additional, Jaussaud, C., additional, Jentzsch, T., additional, Johnson, R.L., additional, Jones, R., additional, Jouanin, C., additional, Jouneau, P.H., additional, Jun, J., additional, Jungnickel, V., additional, Juodžbalis, D., additional, Kajihara, S.A., additional, Kanicki, J., additional, Karmann, S., additional, Katayama-Yoshida, H., additional, Kawakami, Y., additional, Kazlauskas, A., additional, Kean, A., additional, Khan, M.R.H., additional, King-Smith, R.D., additional, Kinto, H., additional, Kißmann, U., additional, Klimakow, A., additional, Klyui, N.I., additional, Koide, N., additional, Koidl, P., additional, Kong, H.-S., additional, Kong, H.S., additional, König, Th., additional, Kono, J., additional, Kononenko, V.K., additional, Kotaki, M., additional, Kreß, C., additional, Krings, T., additional, Krukowski, St., additional, Kubertavicius, V., additional, Kudlek, G.H., additional, Kuhn, W., additional, Kunc, K., additional, Kuroda, Y., additional, Kuznia, J.N., additional, Kwak, K.W., additional, Labrunie, G., additional, Laks, D.B., additional, Lambrecht, W.R.L., additional, Lankes, S., additional, Lebed, V. Yu., additional, Lei, T., additional, Leibenzeder, S., additional, Lepore, M., additional, Licht, T., additional, Ligeon, M., additional, Linkov, I. Yu., additional, Litwin-Staszewska, E., additional, Logothetidis, S., additional, Luce, G., additional, Lutsenko, E.V., additional, Lux-Steiner, M. Ch., additional, Madéore, F., additional, Magerle, R., additional, Mahnke, H.-E., additional, Maier, K., additional, Malinovskii, I.E., additional, Manabe, K., additional, Marinelli, M., additional, Markey, B.G., additional, Markwitz, A., additional, Marshall, T., additional, Mathieu, H., additional, Matsunami, H., additional, McCaldin, J.O., additional, McGill, T.C., additional, McKeever, S.W.S., additional, Meier, J., additional, Mihalcescu, I., additional, Milani, E., additional, Mitcovets, A.I., additional, Mitsuyu, T., additional, Miura, N., additional, Molnar, R.J., additional, Molva, E., additional, Morohashi, M., additional, Morozenko, Ya.V., additional, Moustakas, T.D., additional, Mujica, A., additional, Mula, G., additional, Muller, F., additional, Müller-Sebert, W., additional, Muñoz, A., additional, Mura, A., additional, Naumov, A., additional, Needs, R.J., additional, Nemanich, R.J., additional, Nicolini, R., additional, Nurmikko, A.V, additional, O'Donnell, K.P., additional, Oguchi, T., additional, Ohkawa, K., additional, Okamoto, S., additional, Okazaki, N., additional, Okumura, H., additional, Osman, M.A., additional, Palmour, J.W., additional, Paloura, E.C., additional, Palummo, M., additional, Paoletti, A., additional, Papon, A.M., additional, Paroli, P., additional, Parrinello, M., additional, Pensl, G., additional, Pereira, E., additional, Perlin, P., additional, Petalas, J., additional, Pfeiffer, W., additional, Phillips, M.C., additional, Pikus, F.G, additional, Pinter, I., additional, Pirzer, M., additional, Pohl, U., additional, Pohl, U.W., additional, Polatoglou, H.M., additional, Polian, A., additional, Polini, R., additional, Ponga, B.E., additional, Ponthenier, J.L., additional, Porowski, S., additional, Prins, J.F., additional, Prior, K.A., additional, Puls, J., additional, Qiu, J., additional, Qteish, A., additional, Raciukaitis, G., additional, Reining, L., additional, Reisinger, T., additional, Restle, M., additional, Righini, M., additional, Rodríguez-Hernández, P., additional, Rolfe, S.J., additional, Romestain, R., additional, Ryzhikov, VD., additional, Sailer, B., additional, Sander, D., additional, Santos, L., additional, Sasaki, T., additional, Sawada, M., additional, Scamarcio, G., additional, Scarselli, M.A., additional, Schadt, M., additional, Schneider, A., additional, Schneider, J., additional, Schöner, A., additional, Schülzgen, A., additional, Selci, S., additional, Shinohara, M., additional, Simpson, J., additional, Sorba, L., additional, Spellmeyer, B., additional, Stanley, R.P., additional, Stanzl, H., additional, Stein, R.A., additional, Stewart, H., additional, Suemune, I., additional, Sulzer, G., additional, Suski, T., additional, Suttrop, W., additional, Swenberg, J.F., additional, Taghizadeh, M.R., additional, Takeyama, S., additional, Tansley, T.L., additional, Tebano, A., additional, Thurian, P., additional, Tosatti, E., additional, Trager-Cowan, C., additional, Troullier, N., additional, Tschentscher, I., additional, Tsuboi, N., additional, Tsujimura, A., additional, Tsukioka, K., additional, Tupenevich, P.A., additional, Turner, K.F., additional, Uchiki, H., additional, Uhrmacher, M., additional, Ullrich, B., additional, Uttamchandani, D., additional, Van de Walle, C.G., additional, van der Weide, J., additional, Van Hove, J.M., additional, Vanderbilt, D., additional, Vanzetti, L., additional, Vasileska, D., additional, Vial, J.C., additional, Wagner, H.P., additional, Wahl, U., additional, Waldmann, H., additional, Walker, CT., additional, Wang, E.G., additional, Wang, M.W., additional, Wang, S.Y., additional, Wang, Y., additional, Weinhold, V., additional, Wiehert, T., additional, Wild, C., additional, Witthuhn, W., additional, Wolf, H., additional, Wolf, K., additional, Wörz, M., additional, Yablonskii, G.P., additional, Yagi, M., additional, Yamaga, S., additional, Yamanaka, M., additional, Yang, F., additional, Yoshii, S., additional, Yoshikawa, A., additional, Yu, X., additional, Zeitz, W., additional, and Zimin, L.G., additional

Published
1993
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14. Lattice sites of arsenic ions implanted in diamond

Author

Bharuth-Ram, K., Quintel, H., Restle, M., Ronning, C., Hofsass, H., and Jahn, S.G.

Subjects
Ion implantation -- Usage, Crystal lattices -- Analysis, Diamonds -- Inclusions, Physics
Published
1995

16. Lattice site location studies of ion implanted 8Li in GaN.

Author

Dalmer, M. and Restle, M.

Subjects
*LITHIUM
Abstract

Cites a study which investigated the lattice sites of ion implanted lithium (Li) atoms in GaN. Information on ion implantation; Details on the GaN films used in the experiment; Results of the experiment.

Published
1998

17. Emission Channeling Investigation of Implantation Defects and Impurities in II-VI-Semiconductors

Author

Reinhold, B, Trojahn, I, Malamud, G, Straver, J, Ronnqvist, C, Jahn, S-G, and Restle, M

Subjects
Nuclear Physics - Experiment
Abstract

Detailed knowledge on the behaviour of implantation damage and its influence on the lattice position and environment of implanted dopants in II-VI-compound semiconductors is necessary for a clear interpretation of results from other investigation methods and finally for technical utilization. Besides, a precise localization of impurities could help to clarify the discussion about the instability of the electrical properties of some dopants, called " aging ".\\ \\We intend to use the emission channeling method to investigate: \\ \\i) The behaviour of implantation damage which shall be probed by the lattice location of isoelectronic isotopes (Zn,Cd,Hg,Se,Te) directly after implantation at different temperatures, doses and vacancy densities and after annealing treatments, and ii) the precise lattice sites of the acceptor Ag and donor In under different conditions by implanting precursors Cd and In isotopes. \\ \\Further on we would like to test the application of a two-dimensional position and energy sensitive electron detector for emission channeling measurements which offers a significant improvement of the method like much shorter measurement times, better angular resolution, and independence on instabilities in ion beam current.

Published
2002

19. Amorphization of ZnSe by ion implantation at low temperatures

Author

Jahn, S G, Hofsäss, H C, Restle, M, Ronning, C R, Quintel, H, and Bharuth-Ram, K

Subjects
Condensed Matter
Abstract

Radioactive Cd and Se ions were implanted into high-resistivity ZnSe single crystals around 60 K and 300 K. Their lattice sites were determined by measuring the channelling and blocking effects of the emitted conversion electrons or positrons directly after implantation and after annealing at different temperatures up to 600 K. Implantation doses were in the range of 3$\times 10^{12}$ - 3$\times10^{13}$/cm$^2$. The experimental results of this emission channelling technique yield a high substitutional fraction of the implanted ions directly after implantation at room temperature. At 60 K the substitutional fraction of implanted ions is highly sensitive to the ion dose. Above a critical dose of around 1.4$\times10^{13}$ Cd/cm$^2$ or 2.1$\times10^{13}$ Se/cm$^2$ the substitutional fraction completely disappears indicating an amorphous surrounding of the probe atom. Damage recovery was observed below room temperature and at an annealing temperature around 500 K. A quantitative analysis of measured channelling yields will be given by comparison with calculated electron channelling profiles based on the dynamical theory of electron diffraction.

Published
1995

20. Lattice sites of Li in Si and Ge

Author

Wahl, U, Jahn, SG, Restle, M, Quintel, H, Hofsass, H, Suezawa, M, and KatayamaYoshida, H

Subjects
Ge, Li, ION-IMPLANTED LI-8, DONORS, ion implantation, COMPLEXES, Si, SILICON, lattice location, GERMANIUM
Abstract

The lattice sites of ion implanted Li-8 in Si and Ge were studied using the alpha-emission channeling technique. In both materials tetrahedral interstitial sites were found to be the major occupied lattice sites following room temperature implantation (60-80% in Si and 40-60% in Gel. Depending on the doping character of the sample, up to 55% of Li was found on bond-center sites in Si after implantations between 425 K and 475 K and up to 40% in Ge for implantations between 325 K and 400 K at higher temperatures Li occupied increasingly random lattice sites. The lattice site changes from tetrahedral to bond-center sites are attributed to the onset of interstitial Li diffusion and its capture by additional defects, which are likely to be vacancy-type defects from the implantation process. The trapping of Li at these defects inhibits its long-range diffusion.

Published
1995

27. Microscopic studies of implanted 73As in diamond

Author

Correia, J.G., primary, Marques, J.G., additional, Alves, E., additional, Forkel-Wirth, D., additional, Jahn, S.G., additional, Restle, M., additional, Dalmer, M., additional, Hofsäss, H., additional, and Bharuth-Ram, K., additional

Published
1997
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45. Lattice sites of ion implanted Li in diamond.

Author

Restle, M. and Bharuth-Ram, K.

Subjects
*LATTICE dynamics, *ION implantation, *LITHIUM, *DIAMONDS
Abstract

Examines the lattice sites of ion implanted lithium in diamond. Measurement of emission channeling patterns of alpha particles; Range of temperature used in the study; Difficulty of n-type doping in diamonds.

Published
1995

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