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In situ X-ray absorption spectroscopy (XAS) and in situ X-ray photoelectron spectroscopy (XPS) was applied to study the active surface of vanadium phosphorus oxide (VPO) catalysts in the course of the oxidation of n-butane to maleic anhydride (MA). It elucidates that the surface electronic conductivity and probes the ground state of the Near Edge X-ray Adsorption Fine Structure (NEXAFS) spectra.

In the present work, we have investigated a comparative performance of the silicon (Si) and germanium (Ge) nanoparticles embedded SiO2 floating gate MOS memory devices. In such devices for low applied fields, the tunneling current is dominated by the direct tunneling mechanism, whereas for higher electric fields, the Fowler-Nordheim tunneling mechanism dominates. As the device dimensions get smaller, problem arises in the conventional MOS memory devices due to the leakage through the thin tunnel oxide. This leakage can be reduced via charge trapping by embedding nanoparticles in the gate dielectric of such devices. Here one objective is to prevent the leakage due to the direct tunneling mechanism and the other objective is to reduce the write voltage, by lowering the onset voltage of the Fowler-Nordheim tunneling mechanism. Our simulations for the current voltage characteristics covered both the low and the high applied field regions. Simulations showed that both the Si and the Ge nanoparticles embedded gate dielectrics offer reduction of the leakage current and a significant lowering of the writing or programming onset voltage, compared to the pure SiO2 gate dielectric. In terms of the comparative performance, the Germanium nanoparticles embedded gate dielectric showed better results compared to the silicon nanoparticles embedded one. The results of the simulations are discussed in the light of recent experimental results. [ABSTRACT FROM AUTHOR]

In this work we present new results on spontaneous oxidation of disordered fcc FePt nanoparticles. The “as-made” oleic acid and oleylamine coated FePt nanoparticles of average size 4 nm synthesized by a high-boiling coordinating solvent method were exposed to air over a period of days and characterized structurally and magnetically by means of different techniques such as XANES, XPS, EXAFS, and SQUID magnetometry. The “as-made” FePt nanoparticles stabilize in the disordered fcc structure and have a very low magnetic saturation (Ms=11 emu/g) and a huge coercive field (Hc=1800 Oe) compared to the low temperature bulk values of the disordered fcc FePt. We observed that the coercive field and the magnetic saturation change with the time the sample is exposed to air and these changes are associated with the oxidation or passivation of the nanoparticle surface that gives place to a core-shell structure. Indeed, the study on the electronic properties of the nanoparticles confirms the magnetic results and indicates that when the nanoparticles are exposed to air, changes in the oxidation state of both Fe and Pt occur, the oxidation state of Fe coming close to hematite. The formation of hematite tends to soften the “as-made” FePt nanoparticles as observed by the reduction of the coercive field to almost one third of the original value. Although the hematite softens the FePt nanoparticles, there is an exchange coupling at the interface of the core-shell characterized by the increase of the coercive field from 300 to 900 Oe when the sample is cooled in an applied field of 50 kOe. [ABSTRACT FROM AUTHOR]

The experiment was conducted where alumina-supported molybdenum phosphide (MoP/Al2O3) catalysts were prepared. The X-ray absorption fine structure (XAFS) analysis indicated the presence of dispersed species retaining metallic bonding with a characteristic Mo-P distance of 0.243nm but showing considerable attenuation in Mo-Mo linkages.

Because of their high electrical conductivity CoSi2 nanostructures are potential candidates for preparing ordered nano-arrays to be used as electrode interconnectors and contacts in microelectronic devices. We here describe a controlled procedure for the endotaxial growth of hexagonal CoSi2 nanoplatelets buried in differently oriented single crystalline Si wafers on which a Co-doped SiO2 thin film was previously deposited. These nanomaterials were obtained by a clean procedure consisting of isothermal annealing at 750 °C under a He atmosphere of Co-doped SiO2 thin films deposited onto the surface of three differently oriented flat Si substrates, namely Si(001), Si(011) and Si(111). Buried CoSi2 nanoplatelets are in all cases spontaneously formed as a consequence of the diffusion of Co atoms into the silicon wafer and their reaction with host Si atoms. Our TEM and GISAXS analyses demonstrated that these arrays, irrespective of host Si orientation, consist of CoSi2 hexagonal nanoplatelets in all cases parallel to Si{111} crystallographic planes. Additionally, the dimensions of the nanoplatelets were consistently determined by TEM and GISAXS for the three different host Si single crystal orientations. [ABSTRACT FROM AUTHOR]