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13 results on '"Renet, Sébastien"'

1. Characterizations of Indium Interconnects for 3D Quantum Assemblies

Author

Feautrier, Céline, primary, Deschaseaux, Edouard, additional, Gueugnot, Alain, additional, Charbonnier, Jean, additional, Plihon, Aurélia, additional, Dupré, Ludovic, additional, Henry, Franck, additional, Berger, Frédéric, additional, Pagot, Antoine, additional, Renet, Sébastien, additional, Mailliart, Olivier, additional, and Thomas, Candice, additional

Published
2023
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2. Characterizations of indium interconnects for 3D quantum assemblies

Author

Feautrier, Céline, Deschaseaux, Edouard, Gueugnot, Alain, Charbonnier, Jean, Plihon, Aurélia, Dupré, Ludovic, Henry, Franck, Berger, Frédéric, Pagot, Antoine, Renet, Sébastien, Mailliart, Olivier, Thomas, Candice, Département Composants Silicium (DCOS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
[PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph]
Abstract

International audience; Large-scale integration of quantum bits and quantum technologies relies on multi-chip assemblies. In that context, we focus on indium microbumps to connect chips made from different materials and technological nodes. We have fabricated two test vehicles, comprising GaAs and Si chips stacked by die-to-die process on a Si-based multi-chip module. GaAs on Si and Si on Si daisy chains were compared to evaluate the impact of thermal expansion coefficient mismatch on the chip connection. Electrical measurements in a cryostat from 300 K to 2 K, as well as morphological and mechanical characterizations were used to support this study and qualify In interconnect technology for heterogeneous quantum assemblies.

Published
2023
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13. Photoluminescence studies of CdS layers for solar cells.

Author

Gemain, Frédérique, Robin, Ivan-Christophe, Renet, Sébastien, and Bernardi, Sergio

Abstract

Photoluminescence (PL) measurements were performed on polycrystalline CdS films grown by close space sublimation (CSS) or by chemical bath deposition (CBD) in order to observe the evolution of emission features according to the deposition technique and post-deposition treatments. CdS is naturally n-type because of the presence of sulphur vacancies and in most of the observed samples, a donor-acceptor pair involving the sulfur vacancies could be identified at 1.65 eV. Different complexes emissions could be identified depending on the deposition technique and post-growth treatment. The best efficiencies were measured on CdTe/CdS based solar cells for which the CdS layer presents an excitonic donor bound PL peak as well as an emission corresponding to interstitial cadmium (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Published
2012
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