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Spectrometer miniaturization is desired for handheld and portable applications, yet nearly no miniaturized spectrometer is reported operating within terahertz (THz) waveband. Computational strategy, which can acquire incident spectral information through encoding and decoding it using optical devices and reconstruction algorithms, respectively, is widely employed in spectrometer miniaturization as artificial intelligence emerges. We demonstrate a computational miniaturized THz spectrometer, where a plasmonic filter array tailors the spectral response of a blocked-impurity-band detector. Besides, an adaptive deep-learning algorithm is proposed for spectral reconstructions with curbing the negative impact from the optical property of the filter array. Our spectrometer achieves modest spectral resolution (2.3 cm−1) compared with visible and infrared miniaturized spectrometers, outstanding sensitivity (e.g., signal-to-noise ratio, 6.4E6: 1) superior to common benchtop THz spectrometers. The combination of THz optical devices and reconstruction algorithms provides a route toward THz spectrometer miniaturization, and further extends the applicable sphere of the THz spectroscopy technique.

Owing to their consistently emerging applications in modern photonics, highly sensitive and rapid mid‐infrared (MIR) photodetectors, operating at high temperatures, are of great significance. Herein, a novel PbTe/Ge heterostructure is introduced. Notably, the discovery of a 2D electron gas (2DEG) system on the surface of the PbTe layer is experimentally identified for the first time. A high‐performance PbTe/Ge heterostructure MIR photodetector utilizing a plasmonic photovoltaic effect is developed by employing asymmetric electrodes. The photodetecting device demonstrates an exceptionally high detectivity of 1.1 × 1011 Jones along with a short response time of 15 ns at room temperature. Additionally, the proposed plasmonic photovoltaic mechanism of the device is investigated and mainly ascribed to the propagating plasmons, generated by the coupling of the 2DEG with incident MIR photons. Moreover, a linear detector array (LDA) of PbTe/Ge is demonstrated for a thermal imaging application, which exhibits promising high‐quality real‐time imaging via the 2D photodetector arrays on Ge‐based integrated circuits. This work opens up a new way for the development of next‐generation, advanced MIR photonic devices and integrated photonic systems. [ABSTRACT FROM AUTHOR]

Prenatal malnutrition may increase the risk of depressive symptoms in adulthood. This study investigated the association between prenatal exposure to malnutrition with risk of depressive symptoms in middle-aged and older adults using the Chinese Great Famine of 1959–1961 as a natural experiment. Data were obtained from the China Health and Retirement Longitudinal Study baseline survey (2011). A total of 5391 individuals born from 1956 to 1965 were included in the study. Depressive symptoms were ascertained via the Center for Epidemiological Studies Depression Scale short form. Famine severity was measured using the cohort size shrinkage index. Difference-in-differences models were used to explore the association between prenatal famine exposure and later-life depressive symptoms. Compared with the post-famine cohort (1963–1965), famine cohorts (1959–1962) were 4.74 times (95% CI = 1.28–8.20) as likely to develop depressive symptoms. The stratified analysis found that prenatal exposure to famine was associated with depressive symptoms in rural residents but not those living in urban areas. In rural females, prenatal malnutrition was associated with a higher risk of depressive symptoms. However, there was no significant association between prenatal malnutrition and depressive symptoms in rural males. Our results indicated that prenatal malnutrition may contribute to a higher risk for depressive symptoms in later life among female rural residents. [ABSTRACT FROM AUTHOR]

High‐speed and highly sensitive infrared photodetectors are regarded as one of the most essential components in modern photonic devices and technology because of constantly emerging application scenarios. In this paper, an ultrafast and extremely low noise mid‐infrared (MIR) photodetector is reported at both room and cryogenic temperatures by leveraging the high‐mobility 2D electron gas (2DEG) at the polar CdTe/PbTe heterostructure interface. The detector simultaneously exhibits a peak detectivity of ≈4.2 × 1011 Jones with rapid response in the order of 10 ns, which is substantially superior to the state‐of‐the‐art 2DEG MIR detectors made of 2D layered materials. The ultrafast response with extremely low noise of the 2DEG photodetector is attributed to the unique band alignment at the interface. The practical infrared imaging application is further showcased using the 2DEG MIR detector by revealing the fine features of a MIR radiation target. This work highlights the promising prospect of utilizing the unique 2DEG interface in the field of high‐speed and highly sensitive MIR detection. [ABSTRACT FROM AUTHOR]

Memristors have recently received substantial attention because of their promising and unique emerging applications in neuromorphic computing, which can achieve gains in computation speed by mimicking the topology of the brain in electronic circuits. Traditional memristors made of bulk MoO 3 and HfO 2 , for example, suffer from a low switching ratio and poor durability and stability. In this work, a floating-gate memristor is developed based on a mixed-dimensional heterostructure comprising two-dimensional (2D) molybdenum disulfide (MoS 2 ) and zero-dimensional (0D) Au nanoparticles (AuNPs) separated by an insulating hexagonal boron nitride (h-BN) layer (MoS 2 /h-BN/AuNPs). We find that under the modulation of back-gate voltages, the MoS 2 /h-BN/AuNPs device operates reliably between a high-resistance state (HRS) and a low-resistance state (LRS) and shows multiple stable LRS states, demonstrating the excellent potential of our memristor in multibit storage applications. The modulation effect can be attributed to electron quantum tunneling between the AuNP charge-trapping layer and the MoS 2 channel. Our memristor exhibits excellent durability and stability: the HRS and LRS are retained for more than 10 4 s without obvious degradation and the on/off ratio is >10 4 after more than 3000 switching cycles. We also demonstrate frequency-dependent memory properties upon stimulation with electrical and optical pulses., (© 2024 IOP Publishing Ltd.)