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Your search keyword '"Ren, Nai-fei"' showing total 147 results
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147 results on '"Ren, Nai-fei"'

40. Ultrasonic-Vibration-Assisted Laser Annealing on Photoelectric Properties of FTO Thin Films

Author

Li Bao-Jia, Huang Li-Jing, Ren Nai-Fei, Zu Wei, and Cao Hai-di

Subjects
010302 applied physics, Materials science, business.industry, 02 engineering and technology, Photoelectric effect, 021001 nanoscience & nanotechnology, 01 natural sciences, Inorganic Chemistry, Laser annealing, Ultrasonic vibration, 0103 physical sciences, Optoelectronics, General Materials Science, Thin film, 0210 nano-technology, business
Published
2017

48. Effects of laser irradiation on the photoelectric properties of thermal-annealed metal/fluorine-doped tin oxide transparent conductive films

Author

Zhou Ming, Li Bao-Jia, Huang Li-Jing, and Ren Nai-Fei

Subjects
Electron mobility, Materials science, business.industry, Annealing (metallurgy), Doping, General Physics and Astronomy, Tin oxide, Laser, law.invention, law, Optoelectronics, Grain boundary, Irradiation, business, Sheet resistance
Abstract

Three kinds of bilayer films, i.e. aluminum (Al)/fluorine-doped tin oxide (FTO), copper (Cu)/FTO and silver (Ag)/FTO, are prepared by coating a commercial FTO glass with sputtered metal layers, and subsequently thermally annealed. Then all the as-annealed bilayer films are irradiated using a 532 nm nanosecond pulsed laser. X-ray diffraction (XRD) analysis confirms that all the laser-irradiated films have underwent laser annealing, resulting in an improvement in their photoelectric properties. More significantly, after laser irradiation, the as-annealed Ag/FTO film exhibits the highest increment in average transmittance (400–800 nm) that is increased from 72.6% to 80.5%. This should be attributed mainly to the formation of laser-induced grating structures that have anti-reflection effect on their surfaces. It is also found that the laser irradiation decreases the sheet resistance of the as-annealed Ag/FTO film from 5.6 to 5.3 Ω/sq. The annealing caused by thermal effect of laser irradiation gives rise to an increase in grain size, thereafter reduces carrier scattering at grain boundaries and enhances carrier mobility, which should be responsible for the improvement in conductivity. The calculated results show that after laser irradiation the figure of merit of the as-annealed Ag/FTO film is greatly increased from 0.73×10-2 to 2.16×10-2Ω-1, indicating a significant enhancement in the overall photoelectric property of the film. Laser irradiation can simultaneously achieve fabrication of grating structures and laser annealing, providing a new idea for performance optimization of metal-layer-composited transparent conductive films.

Published
2015

49. Influence of annealing temperature on formation and photoelectric properties of AZO nanosheet-coated FTO-based films.

Author

Huang, Li-jing, Li, Bao-jia, Cao, Hai-di, Zu, Wei, Ren, Nai-fei, and Ding, Hua

Subjects
OXIDE coating, AZO compounds, ALUMINUM, ANNEALING of crystals, TIN oxides, MAGNETRON sputtering
Abstract

In this work, we reported a direct fabrication of Al-doped zinc oxide (AZO) nanosheets on fluorine-doped tin oxide (FTO)-based substrates using thermal annealing method. Specifically, silver (Ag) and AZO layers were successively deposited on commercial FTO/glass by direct current magnetron sputtering, and then the as-deposited AZO/Ag/FTO films were thermally annealed in a tube furnace to prepare AZO nanosheets. The effects of annealing temperature on the AZO nanosheet morphology and the performance of AZO/Ag/FTO films were investigated by an X-ray diffractometer, a scanning electron microscope, an energy dispersive spectrometer, optical transmittance spectra, reflectance spectra and a digital four-point probe instrument. It was found that a suitable temperature resulted in the formation of AZO nanosheets, which could effectively decrease the reflectance and thus improve the transmittance of the films. Smaller densely-distributed AZO nanosheets were observed on the film annealed at 450 °C, enabling it to have the highest average transmittance of 81.0% and the lowest reflectance of 6.3% in the waveband of 400-800 nm. The results also showed that the film annealed at 450 °C had the highest figure of merit of 2.59 × 10 Ω, which was more than four times that of the as-deposited film (0.57 × 10 Ω). This work demonstrates the availability of preparing AZO nanosheets by thermal annealing and provides a reference for improving overall photoelectric property of transparent conducting oxide films. [ABSTRACT FROM AUTHOR]

Published
2017
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