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Coherent control of single photon sources is a key requirement for the advancement of photonic quantum technologies. Among them, nanowire-based quantum dot sources are popular due to their potential for on-chip hybrid integration. Here we demonstrate on-demand single-photon generation ($g^{(2)}(0)(X^{*}) =0.078$ and $g^{(2)}(0)(X)= 0.03$) from resonantly excited InAsP/InP nanowire quantum dots and observe Rabi oscillations in the dot emission, indicating successful coherent manipulation of the excitonic states in the nanowire. We also measure a low emission time jitter for resonant excitation as compared to above-band excitation. This work addresses the long-standing challenge of resonantly exciting nanowire-quantum dots. It paves the way for hybrid quantum photonic integration, enabling spin-photon entanglement and matter memories on-chip.

Various noncollinear spin textures and magnetic phases have been predicted in twisted two-dimensional CrI$_3$ due to competing ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange from moir\'e stacking - with potential spintronic applications even when the underlying material possesses a negligible Dzyaloshinskii-Moriya or dipole-dipole interaction. Recent measurements have shown evidence of coexisting FM and AFM layer order in small-twist-angle CrI$_3$ bilayers and double bilayers. Yet, the nature of the magnetic textures remains unresolved and possibilities for their manipulation and electrical readout are unexplored. Here, we use tunneling magnetoresistance to investigate the collective spin states of twisted double-bilayer CrI$_3$ under both out-of-plane and in-plane magnetic fields together with detailed micromagnetic simulations of domain dynamics based on magnetic circular dichroism. Our results capture hysteretic and anisotropic field evolutions of the magnetic states and we further uncover two distinct non-volatile spin textures (out-of-plane and in-plane domains) at $\approx$ 1{\deg} twist angle, with a different global tunneling resistance that can be switched by magnetic field., Comment: 18 pages, 5 figures

Hybrid quantum technologies aim to harness the best characteristics of multiple quantum systems, in a similar fashion that classical computers combine electronic, photonic, magnetic, and mechanical components. For example, quantum dots embedded in semiconductor nanowires can produce highly pure, deterministic, and indistinguishable single-photons with high repetition, while atomic ensembles offer robust photon storage capabilities and strong optical nonlinearities that can be controlled with single-photons. However, to successfully integrate quantum dots with atomic ensembles, one needs to carefully match the optical frequencies of these two platforms. Here, we propose and experimentally demonstrate simple, precise, reversible, broad-range, and local method for controlling the emission frequency of individual quantum dots embedded in tapered semiconductor nanowires and use it to interface with an atomic ensemble via single-photons matched to hyperfine transitions and slow-light regions of the cesium D1-line. Our approach allows linking together atomic and solid-state quantum systems and can potentially also be applied to other types of nanowire-embedded solid-state emitters, as well as to creating devices based on multiple solid-state emitters tuned to produce indistinguishable photons.

An on-demand source of bright entangled photon pairs is desirable for quantum key distribution (QKD) and quantum repeaters. The leading candidate to generate entangled photon pairs is based on spontaneous parametric down-conversion (SPDC) in a non-linear crystal. However, there exists a fundamental trade-off between entanglement fidelity and efficiency in SPDC sources due to multiphoton emission at high brightness, which limits the pair extraction efficiency to 0.1% when operating at near-unity fidelity. Quantum dots in photonic nanostructures can in principle overcome this trade-off; however, the quantum dots that have achieved entanglement fidelities on par with SPDC sources (99%) have poor pair extraction efficiencies of 0.01%. Here, we demonstrate a 65-fold increase in the pair extraction efficiency compared to quantum dots with equivalent peak fidelity from an InAsP quantum dot in a photonic nanowire waveguide. We measure a raw peak concurrence and fidelity of 95.3% $\pm$ 0.5% and 97.5% $\pm$ 0.8%, respectively. Finally, we show that an oscillating two-photon Bell state generated by a semiconductor quantum dot can be utilized to establish a secure key for QKD, alleviating the need to remove the quantum dot energy splitting of the intermediate exciton states in the biexciton-exciton cascade., Comment: 24 pages (7 main body, excluding references plus 14 supplemental information) and 4 main body figures

Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other components, such as single electron pumps and spin qubits. A major obstacle to integration has been unwanted charge accumulation at the p-n junction gap that suppresses light emission, either due to enhanced non-radiative recombination or inhibition of p-n current. Typically, samples must frequently be warmed to room temperature to dissipate this built-up charge and restore light emission in a subsequent cooldown. Here, we introduce a practical gate voltage protocol that clears this parasitic charge accumulation, in-situ at low temperature, enabling the indefinite cryogenic operation of devices. This reset protocol enabled the optical characterization of stable, bright, dopant-free lateral p-n junctions with electroluminescence linewidths among the narrowest (< 1 meV; < 0.5 nm) reported in this type of device. It also enabled the unambiguous identification of the ground state of neutral free excitons (heavy and light holes), as well as charged excitons (trions). The free exciton emission energies for both photoluminescence and electroluminescence are found to be nearly identical (within 0.2 meV or 0.1 nm). The binding and dissociation energies for free and charged excitons are reported. A free exciton lifetime of 237 ps was measured by time-resolved electroluminescence, compared to 419 ps with time-resolved photoluminescence., Comment: Main text: 5 pages and 5 figures. Supplementary: 18 pages and 11 figures

The realization of a semiconductor near-unity absorber in the infrared will provide new capabilities to transform applications in sensing, health, imaging, and quantum information science, especially where portability is required. Typically, commercially available portable single-photon detectors in the infrared are made from bulk semiconductors and have efficiencies well below unity. Here, we design a novel semiconductor nanowire metamaterial, and show that by carefully arranging an InGaAs nanowire array and by controlling their shape, we demonstrate near-unity absorption efficiency at room temperature. We experimentally show an average measured efficiency of 93% (simulated average efficiency of 97%) over an unprecedented wavelength range from 900 nm to 1500 nm. We further show that the near-unity absorption results from the collective response of the nanowire metamaterial, originating from both coupling into leaky resonant waveguide and transverse modes. These coupling mechanisms cause light to be absorbed directly from the top and indirectly as light scatters from one nanowire to neighbouring ones. This work leads to the possible development of a new generation of quantum detectors with unprecedented broadband near-unity absorption in the infrared, while operating near room temperature for a wider range of applications., Comment: Main manuscript consists of 16 pages and 4 figures. The Supplementary Document consists of 9 pages and 6 figures

Global quantum secure communication can be achieved using quantum key distribution (QKD) with orbiting satellites. Established techniques use attenuated lasers as weak coherent pulse (WCP) sources, with so-called decoy-state protocols, to generate the required single-photon-level pulses. While such approaches are elegant, they come at the expense of attainable final key due to inherent multi-photon emission, thereby constraining secure key generation over the high-loss, noisy channels expected for satellite transmissions. In this work we improve on this limitation by using true single-photon pulses generated from a semiconductor quantum dot (QD) embedded in a nanowire, possessing low multi-photon emission ($<10^{-6}$) and an extraction system efficiency of -15 dB (or 3.1%). Despite the limited efficiency, the key generated by the QD source is greater than that generated by a WCP source under identical repetition rate and link conditions representative of a satellite pass. We predict that with realistic improvements of the QD extraction efficiency to -4.0 dB (or 40%), the quantum-dot QKD protocol outperforms WCP-decoy-state QKD by almost an order of magnitude. Consequently, a QD source could allow generation of a secure key in conditions where a WCP source would simply fail, such as in the case of high channel losses. Our demonstration is the first specific use case that shows a clear benefit for QD-based single-photon sources in secure quantum communication, and has the potential to enhance the viability and efficiency of satellite-based QKD networks., Comment: 6 pages, 5 figures

A broad range of scientific and industrial disciplines require precise optical measurements at very low light levels. Single-photon detectors combining high efficiency and high time resolution are pivotal in such experiments. By using relatively thick films of NbTiN (8-11\,nm) and improving the pattern fidelity of the nano-structure of the superconducting nanowire single-photon detectors (SNSPD), we fabricated devices demonstrating superior performance over all previously reported detectors in the combination of efficiency and time resolution. Our findings prove that small variations in the nanowire width, in the order of a few nanometers, can lead to a significant penalty on their temporal response. Addressing these issues, we consistently achieved high time resolution (best device 7.7\,ps, other devices $\sim$10-16\,ps) simultaneously with high system detection efficiencies ($80-90\%$) in the wavelength range of 780-1000\,nm, as well as in the telecom bands (1310-1550\,nm). The use of thicker films allowed us to fabricate large-area multi-pixel devices with homogeneous pixel performance. We first fabricated and characterized a $100\times100\, \mu m^2$ 16-pixel detector and showed there was little variation among individual pixels. Additionally, to showcase the power of our platform, we fabricated and characterized 4-pixel multimode fiber-coupled detectors and carried out photon correlation experiments on a nanowire quantum dot resulting in $g^2(0)$ values lower than 0.04. The multi-pixel detectors alleviate the need for beamsplitters and can be used for higher order correlations with promising prospects not only in the field of quantum optics, but also in bio-imaging applications, such as fluorescence microscopy and positron emission tomography.

Entangled photon sources are crucial for quantum optics, quantum sensing and quantum communication. Semiconductor quantum dots generate on-demand entangled photon pairs via the biexciton-exciton cascade. However, the pair of photons are emitted isotropically in all directions, thus limiting the collection efficiency to a fraction of a percent. Moreover, strain and structural asymmetry in quantum dots lift the degeneracy of the intermediate exciton states in the cascade, thus degrading the measured entanglement fidelity. Here, we propose an approach for generating a pair of entangled photons from a semiconductor quantum dot by application of a quadrupole electrostatic potential. We show that the quadrupole electric field corrects for the spatial asymmetry of the excitonic wavefunction for any quantum dot dipole orientation and fully erases the fine-structure splitting without compromising the spatial overlap between electrons and holes. Our approach is compatible with nanophotonic structures such as microcavities and nanowires, thus paving the way towards a deterministic source of entangled photons with high fidelity and collection efficiency.

Quantum states of light play a pivotal role in modern science[1] and future photonic applications[2]. While impressive progress has been made in their generation and manipulation with high fidelities, the common table-top approach is reaching its limits for practical quantum applications. Since the advent of integrated quantum nanophotonics[3] different material platforms based on III-V nanostructures-, color centers-, and nonlinear waveguides[4-8] as on-chip light sources have been investigated. Each platform has unique advantages and limitations in terms of source properties, optical circuit complexity, and scaling potentials. However, all implementations face major challenges with efficient and tunable filtering of individual quantum states[4], scalable integration and deterministic multiplexing of on-demand selected quantum emitters[9], and on-chip excitation-suppression[10]. Here we overcome all of these challenges with a novel hybrid and scalable nanofabrication approach to generate quantum light on-chip, where selected single III-V quantum emitters are positioned and deterministically integrated in a CMOS compatible circuit[11] with controlled on-chip filtering and excitation-suppression.Furthermore, we demonstrate novel on-chip quantum wavelength division multiplexing, showing tunable routing of single-photons. Our reconfigurable quantum photonic circuits with a foot print one million times smaller than similar table-top approaches, offering outstanding excitation suppression of more than 95 dB and efficient routing of single photons over a bandwidth of 40 nm, are essential to unleash integrated quantum optical technologies full potential., Comment: 30 pages, 10 figures

Global, secure quantum channels will require efficient distribution of entangled photons. Long distance, low-loss interconnects can only be realized using photons as quantum information carriers. However, a quantum light source combining both high qubit fidelity and on-demand bright emission has proven elusive. Here, we show a bright photonic nanostructure generating polarization-entangled photon-pairs that strongly violates Bell's inequality. A highly symmetric InAsP quantum dot generating entangled photons is encapsulated in a tapered nanowire waveguide to ensure directional emission and efficient light extraction. We collect $\sim$200 kHz entangled photon-pairs at the first lens under 80\,MHz pulsed excitation, which is a 20 times enhancement as compared to a bare quantum dot without a photonic nanostructure. The performed Bell test using the Clauser-Horne-Shimony-Holt inequality reveals a clear violation ($S_{\text{CHSH}}>2$) by up to 9.3 standard deviations. By using a novel quasi-resonant excitation scheme at the wurtzite InP nanowire resonance to reduce multi-photon emission, the entanglement fidelity ($F=0.817\,\pm\,0.002$) is further enhanced without temporal post-selection, allowing for the violation of Bell's inequality in the rectilinear-circular basis by 25 standard deviations. Our results on nanowire-based quantum light sources highlight their potential application in secure data communication utilizing measurement-device-independent quantum key distribution and quantum repeater protocols.

Time-bin entangled photons are ideal for long-distance quantum communication via optical fibers. Here we present a source where, even at high creation rates, each excitation pulse generates at most one time-bin entangled pair. This is important for the accuracy and security of quantum communication. Our site-controlled quantum dot generates single polarization-entangled photon pairs, which are then converted, without loss of entanglement strength, into single time-bin entangled photon pairs., Comment: 20 pages, 6 figures

A fault-tolerant quantum repeater or quantum computer using solid-state spin-based quantum bits will likely require a physical implementation with many spins arranged in a grid. Self-assembled quantum dots (QDs) have been established as attractive candidates for building spin-based quantum information processing devices, but such QDs are randomly positioned, which makes them unsuitable for constructing large-scale processors. Recent efforts have shown that quantum dots embedded in nanowires can be deterministically positioned in regular arrays, can store single charges, and have excellent optical properties, but so far there have been no demonstrations of spin qubit operations using nanowire quantum dots. Here we demonstrate optical pumping of individual spins trapped in site-controlled nanowire quantum dots, resulting in high-fidelity spin-qubit initialization. This represents the next step towards establishing spins in nanowire quantum dots as quantum memories suitable for use in a large-scale, fault-tolerant quantum computer or repeater based on all-optical control of the spin qubits.

One of the key challenges in developing quantum networks is to generate single photons with high brightness, purity, and long temporal coherence. Semiconductor quantum dots potentially satisfy these requirements; however, due to imperfections in the surrounding material, the coherence generally degrades with increasing excitation power yielding a broader emission spectrum. Here we overcome this power broadening regime and demonstrate the longest coherence at exciton saturation where the detection count rates are highest. We detect single-photon count rates of 460,000 counts per second under pulsed laser excitation while maintaining a single-photon purity of greater than 99%. Importantly, the enhanced coherence is attained with quantum dots in ultraclean wurtzite InP nanowires, where the surrounding charge traps are filled by exciting above the wurtzite InP nanowire bandgap. By raising the excitation intensity, the number of possible charge configurations in the quantum dot environment is reduced, resulting in a narrower emission spectrum. Via Monte Carlo simulations we explain the observed narrowing of the emission spectrum with increasing power. Cooling down the sample to 300 mK, we further enhance the single-photon coherence two-fold as compared to operation at 4.5 K, resulting in a homogeneous coherence time, T2, of 1.2 ns., Comment: 13 pages, including supplementary information

A bright photon source that combines high-fidelity entanglement, on-demand generation, high extraction efficiency, directional and coherent emission, as well as position control at the nanoscale is required for implementing ambitious schemes in quantum information processing, such as that of a quantum repeater. Still, all of these properties have not yet been achieved in a single device. Semiconductor quantum dots embedded in nanowire waveguides potentially satisfy all of these requirements; however, although theoretically predicted, entanglement has not yet been demonstrated for a nanowire quantum dot. Here, we demonstrate a bright and coherent source of strongly entangled photon pairs from a position controlled nanowire quantum dot with a fidelity as high as 0.859 +/- 0.006 and concurrence of 0.80 +/- 0.02. The two-photon quantum state is modified via the nanowire shape. Our new nanoscale entangled photon source can be integrated at desired positions in a quantum photonic circuit, single electron devices and light emitting diodes., Comment: Article and Supplementary Information with open access published at: http://www.nature.com/ncomms/2014/141031/ncomms6298/full/ncomms6298.html

Interfacing single photons and electrons is a crucial ingredient for sharing quantum information between remote solid-state qubits. Semiconductor nanowires offer the unique possibility to combine optical quantum dots with avalanche photodiodes, thus enabling the conversion of an incoming single photon into a macroscopic current for efficient electrical detection. Currently, millions of excitation events are required to perform electrical read-out of an exciton qubit state. Here we demonstrate multiplication of carriers from only a single exciton generated in a quantum dot after tunneling into a nanowire avalanche photodiode. Due to the large amplification of both electrons and holes (> 10^4), we reduce by four orders of magnitude the number of excitation events required to electrically detect a single exciton generated in a quantum dot. This work represents a significant step towards single-shot electrical read-out and offers a new functionality for on-chip quantum information circuits.

The ability to achieve near-unity light extraction efficiency is necessary for a truly deterministic single photon source. The most promising method to reach such high efficiencies is based on embedding single photon emitters in tapered photonic waveguides defined by top-down etching techniques. However, light extraction efficiencies in current top-down approaches are limited by fabrication imperfections and etching induced defects. The efficiency is further tempered by randomly positioned off-axis quantum emitters. Here, we present perfectly positioned single quantum dots on the axis of a tailored nanowire waveguide using bottom-up growth. In comparison to quantum dots in nanowires without waveguide, we demonstrate a 24-fold enhancement in the single photon flux, corresponding to a light extraction efficiency of 42 %. Such high efficiencies in one-dimensional nanowires are promising to transfer quantum information over large distances between remote stationary qubits using flying qubits within the same nanowire p-n junction., Comment: 19 pages, 6 figures

We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by electrical injection of electrons and holes. The optical quality of the quantum dot emission is shown to improve when surrounding the dot material by a small intrinsic section of InP. Finally, we report large multiplication factors in excess of 1000 from a single Si nanowire avalanche photodiode comprised of p-doped, intrinsic, and n-doped sections. The large multiplication factor obtained from a single Si nanowire opens up the possibility to detect a single photon at the nanoscale., Comment: 11 pages, 7 figures

Present proposals for the realisation of entangled photon pair sources using the radiative decay of the biexciton in semiconductor quantum dots are limited by the need to enforce degeneracy of the two intermediate, single exciton states. We show how this requirement is lifted if the biexciton binding energy can be tuned to zero and we demonstrate this unbinding of the biexciton in a single, pre-positioned InAs quantum dot subject to a lateral electric field. Full Configuration-Interaction calculations are presented that reveal how the biexciton is unbound through manipulation of the electron-hole Coulomb interaction and the consequent introduction of Hidden Symmetry., Comment: 4 pages, 4 figures submitted to Physical Review Letters